Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p–i–n solar cell

The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p–i–n solar cell (30×40 cm²) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12 MHz. In this work the solar cell was split into small areas of 0.126 cm², aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400–750 nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83 V, short circuit current density of 17.14 mA/cm² and an efficiency of 8% were obtained at growth rates higher than 0.3 nm/s.     

Contact resistivities of sputtered TiN and Ti---TiN metallizations on solar-cell-type-silicon

Contact resistivities of TiN and Ti---TiN contacts on a shallow junction solar-cell-type silicon substrate have been investigated. The contact materials were sputter-deposited. The method of the transmission line model was applied for contact resistivity measurements. The contact resistivity of the n⁺Si---TiN contact system was 2 × 10⁻³ Ωcm² ± 50 per cent and remained constant after annealing up to 700°C for 30 min. For the n⁺Si---Ti---TiN system, the contact resistivity of 9 × 10⁻⁴ Ωcm² ± 50 per cent was measured. A heat treatment of 700°C. 30 min decreases this value by one order of magnitude and the interposed Ti fully reacts with Si and forms a TiSi₂ layer. The voltage drop caused by the n⁺Si---TiN contact system in a standard non-concentrator solar cell is negligible. The n⁺Si---TiSi₂---TiN contact system should be acceptable for Si solar cells used at up to 100 times solar concentration.     

Analysis of thin silicon solar cells for high efficiency

A comprehensive theoretical analysis taking into account the contribution from both the emitter and base regions having finite surface recombination velocity has been developed for computing short-circuit current, open-circuit voltage, and efficiency of thin AR coated thin silicon solar cells with textured front surface. The dependence of efficiency on the front surface and back surface recombination velocities and on the cell parameters have been investigated in details for varying cell thickness considering the effects of bandgap narrowing and Auger recombination in the material. It is shown that efficiency exceeding 24% can be attained with silicon solar cells having thickness as low as 25 μm provided both front and back surfaces are well passivated (S < 10³cm/s) and the doping concentration in the base and emitter are in the range of 5 × 10¹⁶ to 10¹⁷cm⁻³ and 10¹⁸ to 5 × 10¹⁸cm⁻³, respectively. It is also shown that an efficiency of about 23% can be obtained for thin cells of 25 μm thickness with a much inferior quality materials having diffusion length of about 40 μm.     

A dye sensitized TiO2 photovoltaic cell constructed with an elastomeric electrolyte

A photovoltaic solar cell employing an elastomeric electrolyte and using a dye-sensitized nanoporous TiO₂ electrode has been assembled. The polymeric electrolyte is poly(epichlorohydrin-co-ethylene oxide) filled with NaI/I₂. This cell exhibits an open-circuit voltage of 0.71 V and a short-circuit current of 0.46 mA cm⁻² under 120 mW cm⁻² of white-light illumination. The overall conversion efficiency of the cell is 0.22%. The polymeric electrolyte behavior under different conditions of external resistance and intensity of light as well as the performance of this photoelectrochemical cell are discussed.     

Preparation and characterisation of electrodeposited n-CdS/p-CdTe thin film solar cells

Cadmium sulphide and cadmium telluride films have been electrodeposited for n-CdS/p-CdTe solar cells. Cell efficiency varied considerably from 9.5% to 11.5% for each deposition set. The reverse saturation currents of 9.5% and 11.5% cells at 298 K were 25 and 6.7 nA cm⁻², respectively. The cells with higher efficiency has a lower number of interface states than the less efficient cells. The 11.5% cell had interface states (N_IS) of 3× 10¹⁰ cm⁻² eV⁻¹ at zero volt bias in dark and when it was illuminated with 35 mW cm⁻² light at zero volt bias N_IS increased by two orders to 1.2×10¹² cm⁻² eV⁻¹. At higher frequency the large voltage intercept of the Mott-Schottky plot indicates the existence of the near intrinsic layer of the polycrystalline heterojunction.     

Progress in monolithic series connection of wafer-based crystalline silicon solar cells by the novel ‘HighVo’ (High Voltage) cell concept

Progress in the development of the new HighVo cell concept for monolithic series connection of wafer-based crystalline silicon solar cells is presented. HighVo cells have been produced using standard low-cost silicon wafer technology without any photo lithographic masking step. The cells obtained with a total area of 21 cm² exhibited a voltage at the maximum power point V_MPP of 2.8 V and a conversion efficiency η of 11.4 %. To our knowledge this is the highest conversion efficiency reported so far for monolithically integrated non-thin-film silicon solar cells.     

Electrochemical fabrication of p-poly(3-methylthiophene)/n-silicon solar cells

Solar cells with p-poly(3-methylthiophene)/n-silicon heterojunctions have been fabricated by one-step electrodeposition of 3-methylthiophene onto textured n-Si wafers. The devices deliver a 2.0 mA cm⁻² short current density and 0.26 V open-circuit voltage with a 0.42% power conversion efficiency under an AM1.5 simulated solar intensity of 30 mW cm⁻². The devices with neutral poly(3-methylthiophene) show much lower performance.     

Boron-doped diamond-like amorphous carbon as photovoltaic films in solar cell

In this paper, the photovoltaic feature of metal-boron carbide-silicon (MCS) solar cell was reported. The boron-doped diamond-like carbon thin film on n-silicon substrate has been prepared using arc-discharge plasma chemical vapor deposition (PCVD) technique. The conductivity and the resistivity of the film were measured by Bio-Rad Hall5500PC system to be p-type semiconductor and 3–12 Ω cm/□, respectively. The boron content in the films was about 0.8–1.2%, obtained from Auger electron spectroscopy (AES), and some microcrystalline diamond grains (0.5–1.0 μm) embedded in the mainly amorphous network were revealed through scanning electron microscope (SEM) and Raman spectrum. The performance of Au/C(B)/n-Si heterojunction solar cells has been given under dark I–V rectifying curve and I–V working curve (with 100 mW cm⁻² illumination). A measurement of open-circuit voltage V_oc=580 mV and short-circuit current density J_sc=32.5 mA cm⁻² was obtained. Accordingly, the energy conversion efficiency of the device was tentatively determined to be about 7.9% in AM 1.5, 100 mW/cm² illuminated.     

Performance of p-type silicon-oxide windows in amorphous silicon solar cell

a-SiO_x films have been prepared using silane and pure oxygen as reactive gases in plasma CVD system. Diborane was introduced as a doping gas to obtain p-type conduction silicon oxide. Infrared absorption spectra show the incorporation of Si–O stretch mode around 1000 cm⁻¹. The optical bandgap increases with the oxygen to silane gas ratio, while the electrical conductivity decreases. Hydrogenated amorphous silicon solar cells have been fabricated using p-type a-SiO_x with around 1.85 eV optical bandgap and conductivity greater than 10⁻⁷ S/cm. The measured current–voltage characteristics of the solar cells under 100 mW/cm² artificial light are V_oc=0.84 V, J_sc=14.7 mA/cm², FF=0.635 with a conversion efficiency of 7.84%.     

Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell

Current–voltage under illumination and quantum yield characteristics of an amorphous silicon/crystalline silicon hetero solar cell have been measured before and after exposure to high-energy (1.7 MeV) protons. A comparison of the measured wavelength-dependent quantum yield with calculated values enabled to determine the effective electron diffusion length of the crystalline silicon, that dropped from a value of 434 μm before to a value of 4 μm after irradiation with 5×10¹² cm⁻² protons. Good agreement has been obtained between measured and simulated data using DIFFIN,¹ a finite-element simulation program for a-Si:H/c-Si heterojunction solar cells, enabling us to extract the depth profile of the recombination rate and the density of states distribution in the semiconductor layers before and after irradiation.     

Preparation and properties of CdS/CdTe thin film solar cell produced by periodic pulse electrodeposition technique

CdS/CdTe solar cells have been prepared by periodic pulse electrodepositionmethod. 10.8% efficient cell was made with open circuit voltage (V_oc)≈753mV, short-circuit current (J_sc)≈23.6 mA/cm² and fill factor (FF)≈0.61. Current-voltage-temperature measurments showed the variation of ideality factor (A) from 1.88 at 344 K to 4.49 at 202 K whereas voltage factor (α) was almost constant above 276 K. The junction transport is possibly dominated by a tunneling mechanism. Capacitance measurements gave the value of diffusion potential as 1.2 eV, ionized charged density as 5.9 × 10¹⁵ cm⁻³ and number of interface states (N_IS) as 2.8 × 10¹¹ cm⁻² eV⁻¹ at zero volt bias. Measurements of open circuit voltage (V_oc) with temperature gave the value of barrier height as 1.42 eV.     

Solar cells using iodine-doped polythiophene–porphyrin polymer films

Wet-type organic solar cells containing 5,10,15,20-3-tetrathienylporphyrin (TThP) and polythiophene (PTh) films were fabricated. The TThP/PTh film was prepared on indium-tin-oxide (ITO) glass using an electrochemical polymerization method in an n-Bu₄NPF₆/CH₂Cl₂ solution. It was found that a small amount of iodine doping of the film improved the incident photon-to-electron conversion efficiency (IPCE) of a solar cell consisting of a TThP/PTh film and an aqueous electrolyte. A HOMO level measurement suggested that a modified HOMO level of the low iodine-doped TThP/PTh film allowed a fast electron transfer from PTh to a porphyrin moiety. To obtain further improvement, a sandwich-type solar cell using a 5% (w/w) aqueous solution of acetonitrile containing 0.05 M iodine and 0.5 M lithium iodide as an electrolyte was then fabricated. The solar cell absorbed light in the 300–800 nm wavelength range, converting this to a cathodic photocurrent with a maximum IPCE of 32% at 430 nm under irradiation of 5.0×10¹⁴ photon cm⁻² s⁻¹. This value is about 10 times higher than that of the solar cells using an aqueous electrolyte. The total energy conversion efficiency (η) of the solar cell under simulated sunlight reached 0.12% for 2.59 mW cm⁻² at AM1.5 and 0.05% for 100 mW cm⁻² at air mass 1.5.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.     

Dark I–V–T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells

Heterojunction solar cells have been manufactured by depositing n-type a-Si:H on p-type 1–2 Ω cm Cz single-crystalline silicon substrates. An efficiency of 14.2% has been obtained for 1 cm² solar cells by using a simple (Al/(p) c-Si/(n) a-Si:H/ITO/metal grid) structure. With an additional surface texturing, we have reached an efficiency of 15.3% for 1 cm² solar cells. We have investigated the dark IV-curves in order to contribute to a better understanding of the basis of solar cells.     

The effect of temperature on the charge transport and transient absorption properties of K27 sensitized DSSC

The charge transport and transient absorption properties of K27 dye-sensitized solar cell have been investigated. The current–voltage (I–V) characteristics of the solar cell were analyzed by the thermionic emission theory. The ideality factor, barrier height and series resistance values of the solar cell were determined. The ideality factor higher than unity indicated the presence of non-ideal behavior in current–voltage characteristics at lower voltages. At the higher voltages, the charge transport mechanism for the solar cell is controlled by a space-charge limited current (SCLC) with an exponential distribution of traps. The built potential values are determined from capacitance–voltage plot and were found to be 0.14 and 0.58 V, respectively. The transient absorption data of K27 DSSC device suggest that the fast and slow phases are taking place. While the fast phase corresponds to regeneration of the dye cation by the iodide redox couple, the slow phase corresponds to the decay of long-lived I₂⁻/ TiO₂ electron absorption. The best conversion efficiency for K27 DSSC was found to be 0.317% under 100 mW/cm² (FF=0.584, V_oc=480 mV, I_sc=1.131 mA). The photocurrent results indicate that the photogeneration of charge carriers is a monophotonic process.     

Easy-to-fabricate 20% efficient large-area silicon solar cells

Recently, an innovative silicon solar cell structure has been developed at ISFH which is capable of achieving very high cell efficiencies on industrial-size wafers with a simple photolithography-free processing sequence. As the corresponding solar cells essentially rely on the application of obliquely evaporated contacts they are denoted as OECO cells. In this paper the successful up-scaling of the novel OECO process from 21% efficient 4 cm² laboratory devices to the fabrication of large-area (100 cm²) silicon solar cells is described, and independently confirmed total area efficiencies of 20% are reported for 10×10 cm² OECO-type solar cells fabricated on p-type float-zone silicon.     

Amorphous silicon/p-type crystalline silicon heterojunction solar cells

We have investigated the photovoltaic (PV) characteristics of both glow discharge deposited hydrogenated amorphous silicon (a-Si:H) on crystalline silicon (c-Si) in a n⁺ a-Si:H/undoped a-Si:H/p c-Si type structure, and DC magnetron sputtered a-Si:H in a n-type a-Si:H/p c-Si type solar cell structure. It was found that the PV properties of the solar cells were influenced very strongly by the a-Si/c-Si interface. Properties of strongly interface limited devices were found to be independent of a-Si thickness and c-Si resistivity. A hydrofluoric acid passivation prior to RF glow discharge deposition of a-Si:H increases the short circuit current density from 2.57 to 25.00 mA/cm² under 1 sun conditions.DC magnetron sputtering of a-Si:H in a Ar/H₂ ambient was found to be a controlled way of depositing n type a-Si:H layers on c-Si for solar cells and also a tool to study the PV response with a-Si/c-Si interface variations. 300 Å a-Si sputtered onto 1–10 ω cm p-type c-Si resulted in 10.6% efficient solar cells, without an A/R coating, with an open circuit voltage of 0.55 V and a short circuit current density of 30 mA/cm² over a 0.3 cm² area. High frequency capacitance-voltage measurements indicate good junction characteristics with zero bias depletion width in c-Si of 0.65 μm. The properties of the devices have been investigated over a wide range of variables like substrate resistivity, a-Si thickness, and sputtering power. The processing has focused on identifying and studying the conditions that result in an improved a-Si/c-Si interface that leads to better PV properties.     

Substrate to substrate aluminized bonding of 10 cm round silicon substrates for application in solar photovoltaics

Large area silicon solar cells with screen printed contacts have been realized for the first time on 10 cm diameter, p-type, Cz silicon wafers which were bonded to silicon substrates by alloying of a suitably thick screen printed layer of Al on them. In cells made on 300 μm thick wafers without texturization, antireflection coating and passivation of the front surface, the values of the open-circuit voltage (V_oc), the short-circuit current density (J_sc), curve factor (CF) and the efficiency (η) were found to be in the range 572–579 mV, 16–19.2 mA cm⁻², 0.53–0.61 and 5.5–5.89%, respectively, under simulated tungsten halogen light of 100 mW cm⁻² intensity. Using thinner wafers and having optical confinement, surface passivation and effective back surface field, the cell performance would be substantially improved. In fact, an efficiency close to 18% (AM1.5) would be realizable with this approach. Another attractive feature of this approach is that a low-cost silicon substrate could be used at the bottom that would act as support for the thin top surface without disadvantage to the cell performance. In this paper only the principle has been demonstrated experimentally. Possible improvements have been shown by computer simulation.     

High-Ts amorphous top cells for increased top cell currents in micromorph tandem cells

In the present paper, the authors discuss the application of amorphous p–i–n solar cells containing i-layers which are deposited at high substrate temperatures as top cells in amorphous silicon/microcrystalline silicon tandem (“micromorph”) solar cells. Increasing the substrate temperature for the deposition of intrinsic a-Si : H results in a reduced optical gap. The optical absorption is enhanced and thereby the current generation. A high-current generation within a relatively thin amorphous top cell is very interesting in the context of micromorph tandem cells, where the amorphous top cell should contribute a current of at least 13 mA/cm² for a total cell current density of 26 mA/cm². A detailed study of the intrinsic material deposited by VHF-GD at 70 MHz at substrate temperatures between 220°C and 360°C is presented, including samples deposited from hydrogen-diluted silane plasmas. The stability of the films against light soaking is investigated employing the μ₀τ₀ parameter, which has been shown to be directly correlated to the cell performance. The paper discusses in detail the technological problems arising from the insertion of i-layers deposited at high substrate temperatures into solar cells. These problems are specially pronounced in the case of cells in the p–i–n (superstrate) structure. The authors demonstrate that an appropriate interface layer at the p/i-interface can largely reduce the detrimental effects of i-layer deposition at high temperatures. Finally, the application of such optimized high-temperature amorphous cells as top cells in micromorph tandem cells is discussed. Current densities of 13 mA/cm² in the top cell are available with a top cell i-layer thickness of only 250 nm.     

Preparation of (n) a-Si: H/(p) c-Si heterojunction solar cells

Heterojunction solar cells have been manufactured by depositing n-type a-Si: H on p-type 1–2Ω cm CZ single crystalline silicon substrates. Although our cell structure is very simple - neither a BSF nor a surface texturing is used - a conversion efficiency of 13.1% has been achieved on an area of 1 cm². In this paper the technology is described and the dependence of the solar cell parameters on the properties of the n-type a-Si: H layer is discussed. It is shown that this cell type exhibits no degradation under light exposure.