Micromachined ultrasonic transducers based on lead zirconate titanate (PZT) films

The design, fabrication and measuring of piezoelectric micromachined ultrasonic transducers (pMUTs), including the deposition and patterning of PZT films, was investigated. The (100) preferential orientation of PZT film have been deposited on Pt/Ti/SiO₂/Si (100) substrates by modified sol–gel method. PZT film and Pt/Ti electrode were patterned by novel lift-off using ZnO as a sacrificial layer avoiding shortcomings of dry and wet etching methods. pMUT elements have been fabricated by an improved silicon micromachining process and their properties were also characterized. As measured results, the pMUT tends to operate in a standard plate-mode. The receive sensitivity and transmit sensitivity of pMUT element whose active area only has 0.25 mm² are ?218 dB (ref. 1 V/μPa) and 139 dB (ref. 1 μPa/V), respectively.     

Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process

Monolithic fabrication of lead zirconate titanate [Pb(Zr,Ti)O₃ or PZT] based thin film resonant devices such as microcantilevers, Lamb wave and bulk acoustic wave resonators are demonstrated. High-performance PZT thin films with a thickness of 2.6 μm are prepared on a silicon on insulator wafer by a sputtering deposition process. A highly selective reactive ion etching process is employed for micro-patterning of PZT, platinum electrodes, and SiO₂ insulation layer. Self-actuation of the PZT microcantilevers is demonstrated and the frequency response is characterized using a laser Doppler vibrometer. The frequency response of the Lamb wave resonator is evaluated by measuring its transmission characteristic using a network analyzer. For a Lamb wave resonator with a length of 240 μm and an interdigital period of 80 μm, the 1st order and 2nd resonance frequencies are 15.3 and 41.8 MHz, respectively.     

Preparation and characterization of unimorph actuators based on piezoelectric Pb(Zr0.52Ti0.48)O3 materials

This paper describes the preparation and characterization of unimorph actuators for deformable mirrors, based on Pb(Zr_0.52Ti_0.48)O₃ (PZT52) thin film. As comparison, two different designs, where the PZT layer in the unimorph actuators was driven by either interdigitated electrodes (IDT-mode) or parallel plate electrodes (d₃₁-mode), were investigated. The actuators utilize a unimorph membrane (diaphragm) structure consisting of an active PZT piezoelectric layer and a passive SiO₂/Si composite layer. To fabricate the diaphragm structures, n-type (1 0 0) silicon-on-insulator (SOI) wafers with 1 μm thermal SiO₂ were used as substrates (for d₃₁-mode actuators, the upper Si part of SOI need to be heavily doped and used as bottom electrodes simultaneously). Sol-gel derived PZT piezoelectric layers with PbTiO₃ (PT) bufferlayer in total of 0.86 μm were then fabricated on them, and 0.15 μm Al reflective layers were deposited and patterned into top electrode geometries, subsequently. The diaphragms were released using orientation-dependent wet etching (ODE) with 5-10 μm residual silicon layers. The complete unimorph actuators comprise 4 × 4 discrete units (4 mm² in size) with patterned PZT films for parallel plate configuration or 3 × 3 individual pixels (2 mm in IDT diameter) with continuous PZT films in graphic region for IDT configuration. The measurement results indicated that both of the two configurations can generate considerable deflections at low voltage. The measured maximum central deflections at 15 V were approximately 2.5 μm and 2.8 μm, respectively. The intrinsic strain conditions shaping the deflection profiles for the diaphragm actuators were also analyzed. In this paper, the behaviors of clamped parallel plate configuration without a diaphragm were also evaluated.     

Ferroelectric thin film fabrication by direct UV-lithography

Due to their use in the fields of sensors, energy harvesting, capacitors and FeRAMs the fabrication of microstructured ferroelectric thin films is an important research field. Therefore a modified sol–gel process chain has been developed to produce fine patterned ferroelectric PZT (PbZr_0.52Ti_0.48O₃) thin films by direct UV-lithography. A sol based on methacrylic acid was developed to provide a photosensitive metal organic PZT precursor. The sol was used to obtain photosensitive xerogel films by spin-coating, which were patterned using conventional UV-photolithography equipment. After development the patterned xerogel films were pyrolized and crystallized in air via rapid thermal annealing in order to obtain crystalline PZT thin films. The patterned PZT films were investigated by XRD technique and SEM-micrographs. Finely patterned, crack free, crystalline PZT thin films were obtained.     

Membrane microcantilever arrays fabrication with PZT thin films for nanorange movement

Lead zirconate titanate (PZT) piezoelectric thin films have been prepared by sol-gel method to fabricate microcantilever arrays for nano-actuation with potential applications in the hard disk drives. In order to solve the silicon over-etching problem, which leads to a low production yield in the microcantilever fabrication process, a new fabrication process using DRIE etching of silicon from the front side of the silicon wafer has been developed. Silicon free membrane microcantilevers with PZT thin films of 1 μm in thickness have been successfully fabricated with almost 100% yield by this new process. Annealing temperature and time are critical to the preparation of the sol-gel PZT thin film. The fabrication process of microcantilever arrays in planar structure will be presented. Key issues on the fabrication of the cantilever are the compatible etching process of PZT thin film and the compensation of thin film stress in all layers to obtain a flat multi-layer structure.     

Fabrication of piezoelectric multilayer thin-film actuators

In this study, we fabricated multilayer ceramics (MLCs) composed of multilayered Pb(Zr,Ti)O₃ (PZT) piezoelectric thin films with internal electrodes and evaluated their dielectric and piezoelectric properties. The stack of PZT ferroelectric layers (550 nm) and SrRuO₃ (SRO, 80 nm) electrodes were alternatively deposited on Pt/Ti-coated silicon-on-insulator substrates by radio-frequency magnetron sputtering. The MLCs composed of one, three, and five PZT layers were fabricated by the alternate sputtering deposition of PZT ferroelectric layers and SRO electrodes through the movable shadow mask. The capacitances of MLCs were proportionally increased with the number of PZT layers, while their relative dielectric constants were almost same among the each MLC. The MLCs exhibited symmetric and saturated P–E hysteresis loops similar to the conventional PZT thin films. We estimated that the piezoelectric properties of MLCs by FEM simulation, and confirmed that the effective transverse piezoelectric coefficients (d _31,eff ) increased with the number of PZT layers. The piezoelectric coefficients calculated to be d _31,eff  = ?2964 pC/N at 25 PZT layers, which is much higher than those of conventional single-layer piezoelectric thin films.     

Development of novel PZT thin films for active sliders based on head load/unload on demand systems

 Micromachined active sliders based on head load/unload on demand systems is an interesting concept technology for ultra-high magnetic recording density of more than 100 Gb/in². The active sliders that we proposed use PZT thin films as a microactuator and control the slider flying height of less than 10 nm. It is necessary to develop high performance microactuators in order to achieve active sliders operating at very low applied voltage. This paper describes the development of novel PZT thin films for active sliders. The sol–gel fabrication process for PZT thin films is developed and the fundamental characteristics for the PZT thin films are investigated. It is confirmed that the PZT thin films have good ferroelectric properties. Furthermore, novel thin film microactuators are proposed. The feature is that the sol–gel PZT thin films (thickness 540 nm) are deposited on the sputtered PZT thin films (thickness 300 nm) fabricated on bottom Pt/Ti electrodes. Therefore, the novel thin films consist of a thermal SiO₂ layer and the sputtered and sol–gel PZT thin films layers sandwiched with upper Pt and bottom Pt/Ti electrodes on a Si slider material. Fabricating the diaphragm microactuator, the piezoelectric properties for the novel composite PZT thin films are studied. As a result, the piezoelectric strain constant d ₃₁ for the novel PZT thin films is identified to be 130 × 10⁻¹² m/V. This value is higher than conventional monolithic PZT thin films and it is found that the novel composite PZT thin films have the good piezoelectric properties. This suggests the feasibility of realizing active sliders operating at lower voltage under about 10 V. Received: 22 June 2001/Accepted: 17 October 2001     

Submicron polymer structures with X-ray lithography and hot embossing

This article describes the process chain for replication of submicron structures with varying aspect ratios (AR) up to 6 in polymethylmethacrylate (PMMA) by hot embossing to show the capability of the entire LIGA process to fabricate structures with these dimensions. Therefore a 4.7 μm thick layer of MicroChem 950k PMMA A11 resist was spin-coated on a 2.3 μm Ti/TiO _x membrane. It was patterned with X-ray lithography at the electron storage ring ANKA (2.5 GeV and λ _c ≈ 0.4 nm) at a dose of 4 kJ/cm³ using a Si₃N₄ membrane mask with 2 μm thick gold-absorbers. The samples were developed in GG/BDG and resulted in AR of 6–14. Subsequent nickel plating at 52°C resulted in a 200 μm thick nickel tool of 100 mm diameter, which was used to replicate slit-nozzles and columns in PMMA. Closely packed submicron cavities with AR 6 in the nickel shim were filled to 60% during hot embossing.     

Surface modification of a-Si<Subscript>0.60</Subscript>C<Subscript>0.40</Subscript>:H films by Al-assisted photochemical etching: humidity sensing application

The paper investigates the formation of thin porous amorphous silicon carbide (PASiC) by Al-assisted photochemical etching using HF/AgNO₃ solution under UV illumination at λ = 254 nm. Different etching times varying from 2 to 10 min have been used on thin a-Si_0.60C_0.40:H films, which are elaborated by co-sputtering DC magnetron using a single crystal Si target and who deposited onto 86 of hot pressed polycrystalline 6H-SiC stripes of 12.5 mm³. Because of the high electrical resistivity of the thin a-Si_0.60C_0.40:H film higher than 2 MΩ cm, and in order to facilitate the chemical etching, a thin metallic film of high purity aluminum (Al) has been deposited under vacuum, follow-up of a thin palladium deposited under a grid to reduce attacked surface and reinforced solution etching. The etched surface was characterized by scanning electron microscopy, infrared spectroscopy, spectrophotometer UV, and photoluminescence. Results show that the morphology of etched a-Si_0.60C_0.40:H surface evaluates with etching time and presents a spongy and macroporous layers. Where, the diameter of pore size increases with the increasing etching time. A humidity sensors were fabricated through evaporating coplanar interdigital gold electrodes on PASiC and the humidity sensing properties were tested, it show, that the measured resistance Au-PASiC structure, depends highly on the applied bias voltage. Finally, the sensing performances are attributed to the unique surface structure, morphology of the pore and its size, that provide an effective pathway for vapor transportation and enlarged the sensing area of Au-PASiC.     

Quality factor of micro cantilevers transduced by piezoelectric lead zirconate titanate film

The quality factors (Q-factor) of micro cantilevers transduced by piezoelectric lead zirconate titanate (PZT) film under atmospheric pressure conditions were investigated and discussed. It was found that Q-factors increased with thicker PZT film. Due to air damping, shorter cantilevers resulted in preferred larger Q-factors. The Q-factor was found to be as high as 450 for a 150-μm long PZT cantilever when using 1.04-μm thick PZT film as the electromechanical conversion medium. Differences in the measured Q-factors when using integrated PZT film self-excitation and external PZT vibrator actuation indicate that energy dissipation induced by the electromechanical coupling in PZT thin films was noteworthy even under atmospheric pressure conditions. Moreover, the mechanical properties of the PZT film were found contribute significantly to decreases of the Q-factor.     

Development and characterization of a microthermoelectric generator with plated copper/constantan thermocouples

This work reports the development and the characterization of a microthermoelectric generator (μTEG) based on planar technology using electrochemically deposited constantan and copper thermocouples on a micro machined silicon substrate with a SiO₂/Si₃N₄/SiO₂ thermally insulating membrane to create a thermal gradient. The μTEG has been designed and optimized by finite element simulation in order to exploit the different thermal conductivity of silicon and membrane in order to obtain the maximum temperature difference on the planar surface between the hot and cold junctions of the thermocouples. The temperature difference was dependent on the nitrogen (N₂) flow velocity applied to the upper part of the device. The fabricated thermoelectric generator presented maximum output voltage and power of 118 mV/cm² and of 1.1 μW/cm², respectively, for a device with 180 thermocouples, 3 kΩ of internal resistance, and under a N₂ flow velocity of 6 m/s. The maximum efficiency (performance) was 2 × 10^?3 μW/cm² K².     

Resin micromachining by roller hot embossing

The roller hot embossing is an efficient process of manufacture in which patterns are continuously transcribed on film, etc. Recently, the application of the embossing roll to the manufacturing processes of micro parts is paid attention. In this paper, we examined the development of the embossing roll with patterns of micron level and we tried to make the embossing roll mold by using the LIGA process. In this study, instead of producing embossing patterns directly on the roll surface, we fabricated a flexible thin mold with micro-patterns, which was then wrapped onto a cylinder to form an embossing roll, and tested the soft-mold roller hot embossing method. First, by optimizing UV exposure conditions of UV lithography, we prepared a resist pattern of numerous dots with a diameter of 10 μm, a sag height of 8 μm and a pitch of 20 μm. By Ni-electroforming this pattern, a 50 μm-thick thin mold was successfully fabricated. The 50 μm-thick mold was then wrapped onto a cylinder to form an embossing roll. In the roller hot embossing process, the 10 μm-diameter dot shape was successfully replicated on PET sheets.     

Fabrication and characterization of a piezoelectric micromirror using for optical data tracking of high-density storage

A micromirror actuated by three piezoelectric microcantilevers is presented for optical data tracking of high-density storage application. The microcantilevers are actuated by 2.5-μm-thick lead zirconate titanate (PZT) films which are deposited on the silicon-based substrate by a compatible sol–gel route. The X-ray diffraction result shows that the PZT film is perovskite structure and has a typical good ferroelectric loop. The quasi-static displacement of the mirror plate increases linearly with increasing the driving voltage and the tracking resolution on disk is as high as 8 nm/V. The micromirror also provides a high bandwidth of about 21 kHz, which is high enough to support the optical data tracking of future high-density storage.     

Metal-based piezoelectric microelectromechanical systems scanner composed of Pb(Zr, Ti)O3 thin film on titanium substrate

We have developed a titanium (Ti)-based piezoelectric microelectromechanical systems scanner driven by a Pb(Zr, Ti)O₃ (PZT) thin film for the development of laser scanning displays. The 2-μm-thick PZT thin film was directly deposited on a 50-μm-thick Ti substrate by radio frequency magnetron sputtering. Prior to PZT deposition, the Ti substrate was microfabricated into the shape of a horizontal scanner by wet etching; therefore, we could fabricate a piezoelectric microactuator without using the photolithography process. We confirmed the growth of the polycrystalline PZT film with perovskite structures on the Ti substrate. We achieved an optical scanning angle of 22° at a resonant frequency of 25.4?kHz using a driving voltage of 20?V _pp. These horizontal scanning properties can be applicable for laser displays.     

Impact of thermal contact resistances on micro-gap heat losses for microthermionic power generators

Thermionic power generation is a safe and clean energy source that allows for converting heat into electrical energy using thermionic electrons. The miniaturization is an advantage of this technology that led to the recent development of micro-gap thermionic power generators. In this work, thermal contact resistances between the micro-gap insulators and the emitter as well as between the micro-gap insulators and the collector are measured. A thermal resistance of 48.6 K/W is obtained by downsizing the insulators until 60 × 45 μm² of contact area with the emitter, demonstrating a high impact for decreasing the micro-gap conduction heat loss density from the emitter to the collector from 28 W/cm² (theoretical value obtained without considering contact resistances) to 5.6 W/cm². Downsizing the contact area between the insulators and the emitter from 320 × 300 to 60 × 45 μm² leads to an increase of the power conversion efficiency from 9.1 × 10^?5 until 1.5 × 10^?3.     

On-chip manipulation and trapping of microorganisms using a patterned magnetic pathway

We demonstrate on-chip manipulation and trapping of individual microorganisms at designated positions on a silicon surface within a microfluidic channel. Superparamagnetic beads acted as microorganism carriers. Cyanobacterium Synechocystis sp. PCC 6803 microorganisms were immobilized on amine-functionalized magnetic beads (Dynabead^® M-270 Amine) by 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide (EDC)–N-hydroxysulfosuccinimide coupling chemistry. The magnetic pathway was patterned lithographically such that half-disk Ni₈₀Fe₂₀ (permalloy) 5 μm elements were arranged sequentially for a length of 400 micrometers. An external rotating magnetic field of 10 mT was used to drive a translational force (maximum 70 pN) on the magnetic bead carriers proportional to the product of the field strength and its gradient along the patterned edge. Individual microorganisms immobilized on the magnetic beads (transporting objects) were directionally manipulated using a magnetic rail track, which was able to manipulate particles as a result of asymmetric forces from the curved and flat edges of the pattern on the disk. Transporting objects were then successfully trapped in a magnetic trapping station pathway. The transporting object moves two half-disk lengths in one field rotation, resulting in movement at ~24 μm s^?1 for 1 Hz rotational frequency with 5 μm pattern elements spaced with a 1 μm gap between elements.     

Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications

In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr_0.2Ti_0.8)O₃ (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membranes based on epitaxial thin films prepared on a silicon wafer are presented. The dynamic behavior and mass sensing performance of the proposed structure are experimentally investigated and compared to numerical analyses. A 1500 μm diameter silicon membrane actuated by a 150 nm thick epitaxial PZT film exhibits a strong harmonic oscillation response with a high quality factor of 110-144 depending on the resonant mode at atmospheric pressure. Different aspects related to the effect of the mass position and of the resonant mode on the mass sensitivity as well as the minimum detectable mass are evaluated. The operation of the epitaxial PZT membrane as a mass sensor is determined by loading polystyrene microspheres. The mass sensitivity is a function of the mass position, which is the highest at the antinodal points. The epitaxial PZT membrane exhibits a mass sensitivity in the order of 10⁻¹² g/Hz with a minimum detectable mass of 5 ng. The results reveal that the mass sensor realized with the epitaxial PZT thin film, which is capable of generating a high actuating force, is a promising candidate for the development of high performance mass sensors. Such devices can be applied for various biological and chemical sensing applications.     

Bulk property of 1/f noise for piezoresistive Ni/Cr thin films in pressure sensors on flexible substrate

In the current paper, we report the 1/f noise measurement of nichrome Ni/Cr (80/20 %) thin films for two types of pressure sensors: relative pressure sensors and absolute pressure sensors. The normalized Hooge coefficient for nichrome thin film was found to be 1.89 × 10^?10 for the relative pressure sensors and 4.64 × 10^?11 for the absolute pressure sensors. We demonstrated that the normalized Hooge coefficient multiplied by the volume of the thin film become constant regardless of the sensor types and discuss the complexities arise for the miniaturization of MEMS sensors due to the bulk noise properties of piezoresistive thin films.     

Interlayer cooling potential in vertically integrated packages

The heat-removal capability of area-interconnect-compatible interlayer cooling in vertically integrated, high-performance chip stacks was characterized with de-ionized water as coolant. Correlation-based predictions and computational fluid dynamic modeling of cross-flow heat-removal structures show that the coolant temperature increase due to sensible heat absorption limits the cooling performance at hydraulic diameters ≤200 μm. An experimental investigation with uniform and double-side heat flux at Reynolds numbers ≤1,000 and heat transfer areas of 1 cm² was carried out to identify the most efficient interlayer heat-removal structure. The following structures were tested: parallel plate, microchannel, pin fin, and their combinations with pins using in-line and staggered configurations with round and drop-like shapes at pitches ranging from 50 to 200 μm and fluid structure heights of 100–200 μm. A hydrodynamic flow regime transition responsible for a local junction temperature minimum was observed for pin fin in-line structures. The experimental data was extrapolated to predict maximal heat flux in chip stacks having a 4-cm² heat transfer area. The performance of interlayer cooling strongly depends on this parameter, and drops from >200 W/cm² at 1 cm² and >50 μm interconnect pitch to <100 W/cm² at 4 cm². From experimental data, friction factor and Nusselt number correlations were derived for pin fin in-line and staggered structures.     

Growth and electrical properties of highly (0 0 1)-oriented Pb(Zr0.52Ti0.48)O3 thin films on amorphous TiN buffered Si(1 0 0)

Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films with LaNiO₃ (LNO) as bottom electrodes have been grown on amorphous TiN buffered Si(1 0 0) substrates by pulsed laser deposition. It was found that highly (0 0 1)-oriented LNO films could be obtained even if TiN underlayers were amorphous. XRD analyses showed that the subsequently deposited PZT films were also preferentially (0 0 1)-oriented due to the template effect of the perovskite structured LNO films. Dielectric constant of the PZT thin films remained almost constant with frequency in the range from 10³ to 10⁶ Hz, and tangent loss was as small as 0.02 at high frequencies. The remnant polarization and coercive field of an Au/PZT/LNO capacitor were typically 20 μC/cm² and 30 kV/cm, respectively. C–V and I–V characteristics revealed the capacitance and leakage current variations with applied voltage were asymmetric when the bottom electrode was negatively as well as positively biased, indicating that ferroelectric/electrode interfaces and space charges play an important role in the electrical properties of ferroelectric capacitors.