Influence of the substrate temperature on the optical and electrical properties of Ga-doped ZnO thin films fabricated by pulsed laser deposition

Ga-doped (5 wt%) zinc oxide (GZO) thin films were fabricated on corning 1737 substrates at a fixed oxygen pressure of 200 mTorr at various substrate temperatures (100–300 °C) by using pulsed laser deposition (PLD) in order to investigate the microstructure, optical, and electrical properties of the GZO thin films. It was observed that all the thin films exhibit c-axis orientation and exhibit only a (002) diffraction peak. The GZO thin film, which was fabricated at 200 mTorr and 300 °C, showed the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak was 0.38°. The position of the XRD peak shifted to a higher angle with increase in the substrate temperature. The optical transmittance in the visible region was greater than 85%. The Burstein-Moss effect, which causes a shift toward a high photon energy level, was observed. The electrical property indicated that the highest carrier concentration (2.33 × 10²¹ cm⁻³) and the lowest resistivity (3.72 × 10⁻⁴ Ωcm) were obtained in the GZO thin film fabricated at 200 mTorr and 300 °C.     

Low-temperature preparation of transparent conductive Al-doped ZnO thin films by a novel sol–gel method

We developed a novel sol–gel method to prepare transparent conductive Al-doped ZnO (AZO) thin film at low temperature. The AZO nanocrystals were prepared by a solvothermal method and then they were dispersed in the monoethanolamine and methanol to form AZO colloids. A (002)-oriented ZnO thin film was used as a nucleation layer to induce the (002)-oriented growth of AZO thin films. The AZO thin films were prepared on Si(100) and fused quartz glass substrates with the (002)-oriented ZnO nucleation layer and annealed at 400 °C for 60 min. All AZO thin films showed (002) orientation. For electrical and optical measurements, the films deposited on glass substrates were post-annealed at 400 °C for 30 min in forming gas (100 % H₂) to improve their conductivity. These samples had high transparency in the visible wavelength range, and also showed good conductivity. A 0.2 mol L^?1 AZO solution with 3 at.% Al content was heated in a Teflon autoclave at 160 °C for 30 min to form AZO nanocrystals, and then the AZO nanocrystals were suspended in the MEA and methanol to obtain the stable AZO colloid. The Al content in the AZO nanocrystals was 2.7 at.%, and the high Al doping coefficient was mainly attributed to the formation of AZO nanocrystals in the autoclave. The AZO thin film using this colloid had the lowest resistivity of 3.89 × 10^?3 Ω cm due to its high carrier concentration of 3.29 × 10²⁰ cm^?3.     

The properties of Al doped ZnO thin films deposited on various substrate materials by RF magnetron sputtering

Transparent conductive Al-doped ZnO (AZO) thin films were deposited on various substrates including glass, polyimide film (PI) and stainless steel, using radio frequency magnetron sputtering method. The structural, electrical and optical properties of AZO thin films grown on various substrates were systematically investigated. We observe that substrate materials play important roles in film crystallization and resistivity but little on optical transmittance. X-ray diffractometer study shows that all obtained AZO thin films have wurtzite phase with highly c-axis preferred orientation, and films on glass present the strongest (002) diffraction peaks. The presence of compression stress plays critical role in determining the crystalline structure of AZO films, which tends to stretch the lattice constant c and enlarge the (002) diffraction angle. Although the films on the glass present the finest electrical properties and the resistivity reaches 12.52 × 10-4 Ωm, AFM study manifests that films on flexible substrates, especially stainless steel, bestrew similar inverted pyramid structure which are suitable for window material and electrode of solar cells. The average optical transmittance of AZO thin films deposited on glass and PI are both around 85% in the visible light range (400–800 nm).     

Effect of Ga doping concentrations,substrate temperatures and working pressures on the electrical and optical properties of ZnO thin films

We fabricated Ga-doped ZnO (GZO) thin films on glass substrate by RF magnetron sputtering method with different conditions of Ga₂O₃ concentration, substrate temperature and working pressure. Next we investigated the electrical, optical and structural properties of the GZO thin films. At a substrate temperature of 300 °C, a working pressure of 1 mTorr, and a Ga₂O₃ concentration of 3 wt%, the GZO thin films showed the lowest resistivity of 3.16 × 10^?4 Ω cm, a carrier concentration of 7.64 × 10²⁰ cm^?3 and a Hall mobility of 25.8 cm²/Vs. Moreover, the GZO thin films exhibited the highest (002) orientation under the same conditions and the full width at half maximum of X-ray peak was 0.34°. All GZO thin films showed the optical transmittance of more than 80 % in the visible range regardless of working conditions. The Burstein–Moss effect was observed by the change of doping concentration of Ga₂O₃. The GZO thin films were fabricated to have the good electrical and optical properties through optimizing doping concentration of Ga₂O₃, substrate temperature, working pressure. Therefore, we confirmed the possibility of application of GZO thin film as transparent conductive oxide used in flat panel display and solar cell.     

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600 °C at constant oxygen percentage O₂/(O₂ + Ar) % of 66.67 % in a mixed gas of Ar and O₂ with constant chamber pressure of 2.75 × 10^?4 mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be ?0.32 × 10¹⁰ dyne/cm² from ZnO film grown at 200 °C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375 nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600 °C. The minimum FWHM of the NBE peak of 16.76 nm was achieved at 600 °C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400 °C. The ZnO thin film was found to be highly resistive when grown at 100 °C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500 °C and again increased for film grown at 600 °C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.     

Effect of Al concentrations on the electrodeposition and properties of transparent Al-doped ZnO thin films

Al-doped zinc oxide (AZO) thin films are prepared on polycrystalline fluorine-doped tin oxide-coated conducting glass substrates from nitrates baths by the electrodeposition process at 70 °C. The electrochemical, morphological, structural and optical properties of the AZO thin films were investigated in terms of different Al concentration in the starting solution. It was found that the carrier density of AZO thin films varied between ?3.11 and ?5.56 × 10²⁰ cm^?3 when the Al concentration was between 0 and 5 at.%. Atomic force microscopy images reveal that the concentration of Al has a very significant influence on the surface morphology and roughness of thin AZO. X-ray diffraction spectra demonstrate preferential (002) crystallographic orientation having c-axis perpendicular to the surface of the substrate and average crystallites size of the films was about 33–54 nm. With increasing Al doping, AZO films have a strong improved crystalline quality. As compared to pure ZnO, Al-doped ZnO exhibited lower crystallinity and there is a shift in the (002) diffraction peak to higher angles. Due to the doping of Al of any concentration, the films were found to be showing >80 % transparency. As Al concentration increased the optical band gap was also found to be increase from 3.22 to 3.47 eV. The room-temperature photoluminescence spectra indicated that the introduction of Al can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects in UV optoelectronic devices. A detailed comparison and apprehension of electrochemical, optical and structural properties of ZnO and ZnO:Al thin films is done for the determination of optimum concentration of Al doping.     

Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer

Due to the simultaneously superior optical transmittance and low electrical resistivity, transparent conductive electrodes play a significant role in semiconductor electronics. To enhance the electrical properties of these films, one approach is thickness increment which degrades the optical properties. However, a preferred way to optimize both electrical and optical properties of these layers is to introduce a buffer layer. In this work, the effects of buffer layer and film thickness on the structural, electrical, optical and morphological properties of AZO thin films are investigated. Al-doped zinc oxide (AZO) is prepared at various thicknesses of 100 to 300 nm on the bare and 100 nm-thick indium tin oxide (ITO) coated glass substrates by radio frequency sputtering. Results demonstrate that by introducing ITO as a buffer layer, the average values of sheet resistance and strain within the film are decreased (about 76 and 3.3 times lower than films deposited on bare glasses), respectively. Furthermore, the average transmittance of ITO/AZO bilayer is improved nearly 10% regarding single AZO thin film. This indicates that bilayer thin films show better physical properties rather than conventional monolayer thin films. As the AZO film thickness increases, the interplanar spacing, d₍₀₀₂₎, strain within the film and compressive stress of the film in the hexagonal lattice, decreases indicating the higher yield of AZO crystal. Moreover, with the growth in film thickness, carrier concentration and optical band gap (E_g) of AZO film are increased from 4.62?×?10¹⁹ to 8.21?×?10¹⁹ cm^?3 and from 3.55 to 3.62 eV, respectively due to the Burstein-Moss (BM) effect. The refractive index of AZO thin film is obtained in the range of 2.24–2.26. With the presence of ITO buffer layer, the AZO thin film exhibits a resistivity as low as 6?×?10^?4 Ω cm, a sheet resistance of 15 Ω/sq and a high figure of merit (FOM) of 1.19?×?10⁴ (Ω cm)^?1 at a film thickness of 300 nm. As a result, the quality of AZO thin films deposited on ITO buffer layer is found to be superior regarding those grown on a bare glass substrate. This study has been performed over these two substrates because of their significant usage in the organic light emitting diodes and photovoltaic applications as an enhanced carrier injecting electrodes.     

Low temperature synthesis of sol–gel derived Al-doped ZnO thin films with rapid thermal annealing process

A series of sol–gel derived Al-doped ZnO (AZO) thin films with rapid thermal annealing process at low temperature were studied to examine the influence of annealing temperature and the Al doping concentration on their microstructure, electrical and optical transport properties. Crystalline AZO thin films were obtained following an annealing process at temperatures between 400 and 600 °C for 10 min in argon gas ambient. AZO thin films with Al doping of 1 at% were oriented more preferentially along the (002) direction, and have larger grain size and lower electrical resistivity, while the highest average optical transmittances of 92% were observed in AZO films with Al doping of 2 at%. With the annealing temperature increasing from 400 to 600 °C, the grain size of AZO films increased, the optical transmittance became higher, and the electrical resistivity decreased to a lowest value of 1.2 × 10⁻⁴ Ω cm resulting from the increase of the carrier concentration and the mobility.     

Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power

In this study, transparent conductive Al doped zinc oxide (ZnO: Al, AZO) thin films with a thickness of 40 nm were prepared on the Corning glass substrate by radio frequency magnetron sputtering. The properties of the AZO thin films are investigated at different substrate temperatures (from 27 to 150 °C) and sputtering power (from 150 to 250 W). The structural, optical and electrical properties of the AZO thin films were investigated. The optical transmittance of about 78 % (at 415 nm)–92.5 % (at 630 nm) in the visible range and the electrical resistivity of 7 × 10^?4 Ω-cm (175.2 Ω/sq) were obtained at sputtering power of 250 W and substrate temperature of 70 °C. The observed property of the AZO thin films is suitable for transparent conductive electrode applications.     

Microstructure and properties of Al-doped ZnO thin films by nonreactive DC magnetron sputtering at room temperature following rapid thermal annealing

A series of Al-doped ZnO (AZO) thin films deposited by nonreactive DC magnetron sputtering at room temperature following rapid thermal annealing was studied to examine the influence of these Al doping concentration, sputtering power and annealing temperature on their microstructure, electrical and optical transport properties. AZO thin films with Al dopant of 3 wt% were oriented more preferentially along the (002) direction, bigger grain size and lower electrical resistivity The resistivity of AZO films decreases with the increase of Al content from 1 to 3 wt%, sputtering power from 60 to 100 W and the annealing temperature from 50 to 250 °C. Sputtering power and annealing had some effect on the average transmittance of AZO thin films. For AZO thin films with Al doping level of 3 wt%, the lowest electrical resistivity of 5.3 × 10⁻⁴ Ω cm and the highest optical transmittance of 88.7% could gain when the sputtering power was 100 W and the annealing temperature was 200 °C or above.     

Study of optoelectronics and microstructures on the AZO/nano-layer metals/AZO sandwich structures

In this study, growth nano-layer metals (Al, Cu, Ag) and Al-doped ZnO (AZO) thin films are deposited on glass substrates as the transparent conducting oxides (TCOs) to form AZO/nano-layer metals/AZO sandwich structures. The conductivity properties of thin films are enhanced when the average transmittance over the wavelengths 400–800 nm is maintained at higher than 80 %. A radio frequency magnetron sputtering system is used to deposit the metal layers and AZO thin films of different thickness, to form AZO/Al/AZO (ALA), AZO/Cu/AZO (ACA) and AZO/Ag/AZO (AGA) structures. X-ray diffraction and field emission scanning electron microscopy are used to analyze the crystal orientation and structural characteristic. The optical transmission and resistivity are measured by UV–VIS–NIR spectroscopy and Hall effect measurement system, respectively. The results show that when the Ag thickness is maintained at approximately 9 nm, the TCOs thin film has the lowest resistivity of 8.9 × 10^?5 Ω-cm and the highest average transmittance of 81 % over the wavelengths 400–800 nm. The crystalline Ag nano-crystal structures are observed by high-resolution transmission electron microscopy. In addition, the best figure of merit for the AZO/Ag/AZO tri-layer film is 2.7 × 10^?2 (Ω^?1), which is much larger than that for other structures.     

Damp heat stability of AZO transparent electrode and influence of thin metal film for enhancing the stability

The electrical properties of Aluminum doped ZnO (AZO) thin films prepared by sol–gel method were investigated as a function of annealing atmosphere (vacuum, argon +5 % hydrogen and pure hydrogen) and doping concentration (1, 2, 3 and 4 wt%). An optimal annealing atmosphere (pure hydrogen) and doping concentration (2 wt%) was obtained with a minimum resistivity of 1.6 × 10^?3 Ω cm. The structural, optical and electrical stability has been investigated by a damp-heat test in an environment with 85 % relative humidity at 85 °C. The degradation of the electrical film properties was due to the decrease of carrier concentration and mobility, whereas, no significant change was observed for structural and optical properties. The thin metallic layer (Ti or Cr) was deposited on AZO by sputtering to prevent the penetration of oxygen and water into film thus increasing the electrical stability. Oxide layer of metal was formed on surface when it comes to air at room temperature which was confirmed by X-ray photoelectron spectroscopy and thus a bi-layer of metal/metal oxide layer on AZO film enhances the electrical stability.     

Effects of substrate temperatures on the thermal stability of Al-doped ZnO thin films grown by DC magnetron sputtering

In this work, Al-doped (4 at%) ZnO(AZO) thin films were prepared by DC magnetron sputtering using a home-made ceramic target at different substrate temperatures. The microstructure, optical, electrical and thermal stability properties of these thin films were characterized systematically using scanning electron microscopy, UV–Vis-NIR spectrometry, X-ray diffraction, and Hall measurements. It was observed that the AZO thin films deposited at 350 °C exhibited the lowest resistivity of 5.76 × 10⁻⁴ Ω cm, high average visible transmittance (400–800 nm) of 92%, and the best thermal stability. Comparing with the AZO thin films deposited at low substrate temperatures, the AZO thin films deposited at 350 °C had the highest compact surface morphology which could hinder the chemisorbed and diffused oxygen. This was considered to be the main mechanism which was responsible for the thermal degradation of AZO thin films.     

Texturization of ZnO:Al surface by reactive ion etching in SF<Subscript>6</Subscript>/Ar,CHF<Subscript>3</Subscript>/Ar plasma for application in thin film silicon solar cells

As-deposited sputtered ZnO:Al (AZO) thin films having high transparency (T?≥?85% at 550 nm of wavelength) and good electrical properties (ρ?=?2.59?×?10^?04 Ω cm) are etched to get suitable light trapping in thin film solar cells, using reactive ion etching method in sulfur hexafluoride–argon (SF₆/Ar) plasma and trifluoromethane–argon (CHF₃/Ar) plasma to texture their surface. Though the electrical properties of the films are not affected much by the etching process but significant increment in the average haze values in the wave length range of 350–1100 nm in the etched AZO films (19.21% for SF₆/Ar and 22.07% for CHF₃/Ar plasma etched) are found compared to as-deposited AZO films (5.61%). Increment in haze value is due to more scattering of light from the textured surface. These textured substrates are used as front transparent conducting oxide electrode for the fabrication of amorphous silicon solar cells. Solar cells fabricated on etched AZO substrates show 7.76% increase in conversion efficiency compared to as-deposited AZO substrates.     

Synthesis of SiOF nanoporous ultra low-k thin film

In this work, we have investigated the effect of annealing temperature on physical, chemical and electrical properties of Fluorine (F) incorporated porous SiO₂ xerogel low-k films. The SiO₂ xerogel thin films were prepared by sol–gel spin-on method using tetraethylorthosilicate as a source of Si. The hydrofluoric acid was used as a catalyst for the incorporation of F ion in the film matrix. The thickness and refractive index (RI) of the films were observed to be decreasing with increase in annealing temperature with minimum value 156 nm and 1.31 respectively for film annealed at 400 °C. Based on measured RI value, the 34 % porosity and 1.53 gm/cm³ density of the film annealed at 400 °C have been determined. The roughness of the films as a function of annealing temperature measured through AFM was found to be increased from 0.9 to 1.95 nm. The Electrical properties such as dielectric constant and leakage current density were evaluated with capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements of fabricated Al/SiO₂ xerogel/P–Si metal–insulator-semiconductor (MIS) structure. Film annealed at 400 °C, was observed to be with the lowest dielectric constant value (k = 2) and with the lowest leakage current (3.4 × 10^?8 A/cm²) with high dielectric breakdown.     

Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target

Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100–250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500–800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10^?4 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers.     

The influence of substrate temperature on the properties of aluminum-doped zinc oxide thin films deposited by DC magnetron sputtering

Transparent, conducting, aluminum-doped zinc oxide (AZO) thin films were deposited on Corning 1737 glass by a DC magnetron sputter. The structural, electrical, and optical properties of the films, deposited using various substrate temperatures, were investigated. The AZO thin films were fabricated with an AZO ceramic target (Al₂O₃:2 wt%). The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was 6.0 × 10⁻⁴Ω cm, with a carrier concentration of 2.7 × 10²⁰ cm⁻³ and a Hall mobility of 20.4 cm²/Vs. The average transmittance in the visible range was above 90%.     

Investigation of dual ion beam sputtered transparent conductive Ga-doped ZnO films

Ga-doped ZnO (GZO) transparent conducting films were deposited on sapphire (0001) substrates using dual ion beam sputtering deposition system. The impact of growth temperature on the structural, morphological, elemental, optical, and electrical properties was thoroughly investigated and reported. X-ray diffraction measurements explicitly confirmed that all GZO films had (002) preferred crystal orientation. The film deposited at 400 °C exhibited the narrowest full-width at half-maximum value of 0.24° for (002) crystalline plane and the lowest room temperature electrical resistivity of 4.11 × 10^?3 Ω cm. The Raman spectra demonstrated the vibrational modes at 576 and 650–670 cm^?1, associated with native oxygen vacancies and elemental Ga doping in ZnO lattice, respectively. All doped films showed an overall transmittance of above 95 % in the visible spectra. A correlation between structural, optical, elemental, and electrical properties with GZO growth temperature was established.     

Post-annealing properties of aluminum-doped zinc oxide films fabricated by ion beam co-sputtering

Aluminum-doped zinc oxide (AZO) films were fabricated by using the ion beam sputter deposition (IBSD) method with dual metallic targets, Al and Zn, co-sputtered by argon ion beam in an oxygen ambient. Structural and electrical properties of AZO films before and after annealing were ex situ investigated by the X-ray diffractometer and Hall measurement with the Van der Pauw method, respectively. The intense (002) diffraction peak and simultaneously the low resistivity were observed in the as-deposited film. The resistivity of the film after 400 °C post-anneal increased more than two orders of magnitude than that of the as-deposited film resulting from the decrease of the donor concentration and mobility in the AZO film. The residual stress was derived from the results of the XRD patterns. Finally, it was found that the film resistivity increased as the annealing temperature increased and a corresponding shift of the energy band gap was observed.     

Effect of temperature on the properties of Al:ZnO films deposited by magnetron sputtering with inborn surface texture

Al:ZnO (AZO) films were deposited on glass substrate with inborn surface texture by magnetron sputtering at a power density as high as 7 W/cm². The sputtering parameters, such as argon working pressure and substrate temperature were varied from 1.0 to 6.0 Pa and from room temperature to 500 °C, respectively. All the films exhibited perfect (002) orientations with very weak (004) peaks measured by X-ray diffraction. A linear relationship between the growth rate of AZO film and working pressure was found. The AZO film with best electrical properties of all films obtained at room temperature was deposited at working pressure of 2.0 Pa. And the root-mean-square roughness tested by atomic force microscopy was 37.50 nm, which indicated that surface texture was successfully fabricated without further etching process. For higher substrate temperature a decrease in the resistivity was observed due to an increase in the mobility and the carrier concentration. Resistivity low as 9.044 × 10⁻⁴ ohm/cm was obtained at 500 °C and 2.0 Pa, the corresponding mobility and carrier concentration were 20.45 m²/Vs and 3.379 × 10²⁰/cm³, respectively. The grain size and the surface texture size tested by scanning electron microscopy also peaked at 500 °C. All the films showed a relatively high transmittance about 80%.