Grain size control in ITO targets and its effect on electrical and optical properties of deposited ITO films

Tin-doped indium oxide (ITO) ceramic targets with three types of grain size (<10, 10–20 and >20 μm) were prepared by controlling sintering process. It is found that all targets show polycrystalline structure and a rapid heating and short holding time contributes to refining grain size. The ITO films were deposited using these ITO targets with three types of grain sizes under dc and rf mode. The effects of grain size on the structural, electrical and optical properties of the as-deposited films were systematically investigated. The results indicate that all ITO films are the (222) preferred orientation, and the surface grain morphologies are round (dc mode) and triangular (rf mode). The sheet resistance, transmittance and uniformity of the ITO films are significantly impacted by the grain size. The small grain size (<10 μm) contributes to improving the uniformity of electrical and optical properties. The optimal uniformity of sheet resistance under dc and rf mode is about 13 and 10 %, respectively.     

Fabrication and characterization of nanostructured indium tin oxide film and its application as humidity and gas sensors

This paper reports the synthesis and characterization of nanocrystalline indium tin oxide (ITO) and its application as humidity and gas sensors. The structure and crystallite size of the synthesized powder were determined by X-ray diffraction. The minimum crystallite size was found 5 nm by Debye–Scherrer equation and confirmed by transmission electron microscopy image. Optical characterizations of ITO were studied using UV–visible absorption spectroscopy and Fourier transforms infrared spectroscopy. Thermal analysis was carried out by differential scanning calorimetry. Further, the ITO thin film was fabricated using sol–gel spin coating method. The surface morphology of the fabricated film was investigated using scanning electron microscopy images. For the study of humidity sensing, the thin film of ITO was exposed with humidity in a controlled humidity chamber. The variations in resistance of the film with relative humidity were observed. The average sensitivity of the humidity sensor was found 0.70 MΩ/%RH. In addition, we have also investigated the carbon dioxide (CO₂) and liquefied petroleum gas sensing behaviour of the fabricated film. Maximum sensitivity of the film was ~17 towards CO₂. Its response and recovery times were ~5 and 7 min respectively. Sensor based on CO₂ is 97 % reproducible after 3 months of its fabrication. Better sensitivity, small response time and good reproducibility recognized that the fabricated sensor is challenging for the detection of carbon dioxide.     

Fast response time alcohol gas sensor using nanocrystalline F-doped SnO2 films derived via sol–gel method

Pure and fluorine-modified tin oxide (SnO₂) thin films (250–300 nm) were uniformly deposited on corning glass substrate using sol–gel technique to fabricate SnO₂-based resistive sensors for ethanol detection. The characteristic properties of the multicoatings have been investigated, including their electrical conductivity and optical transparency in visible IR range. Pure SnO₂ films exhibited a visible transmission of 90% compared with F-doped films (80% for low doping and 60% for high doping). F-doped SnO₂ films exhibited lower resistivity (0· 12 × 10^???4 Ω  cm) compared with the pure (14·16 × 10^???4 Ω  cm) one. X-ray diffraction and scanning electron microscopy techniques were used to analyse the structure and surface morphology of the prepared films. Resistance change was studied at different temperatures (523–623 K) with metallic contacts of silver in air and in presence of different ethanol vapour concentrations. Comparative gas-sensing results revealed that the prepared F-doped SnO₂ sensor exhibited the lowest response and recovery times of 10 and 13 s, respectively whereas that of pure SnO₂ gas sensor, 32 and 65 s, respectively. The maximum sensitivities of both gas sensors were obtained at 623 K.     

Influence of pyrolytic temperature on the properties of ZnO films optimized for H2 sensing application

In this work, we report the influence of pyrolytic temperature on the properties of ZnO films deposited by a novel spray pyrolysis deposition route. XRD results revealed an improvement in crystal quality of the films with increase in growth temperature. The optical measurements of the films show a maximum transmittance of ~85 % and the band gap of ~3.5 eV. Photoluminescence spectra revealed that the UV emission peaks at 385 nm is improved with increase in growth temperature upto 300 °C, which corresponds to the increase of optical quality and decrease of Zn interstitial defect in the films. Gold ohmic contacts were evaporated on the optimized ZnO film prepared at the substrate temperature of 300 °C, and response of the film to different concentrations of hydrogen (150–500 ppm) at room temperature was investigated. The ZnO sensor showed significant sensitivity to hydrogen for concentration as low as 150 ppm at room temperature, and the sensor response was observed to increase with increase in hydrogen concentration. The increased sensitivity of the film was attributed to the large roughness of the film revealed from AFM analysis. The results ensure the application of our novel sensor, to detect H₂ at low concentration and at room temperature.     

Effect of annealing time on the structural,optical and electrical characteristics of DC sputtered ITO thin films

Using an Indium tin oxide (ITO) ceramic target (In₂O₃:SnO₂, 90:10 wt%), ITO thin films were deposited by conventional direct current magnetron sputtering technique onto glass substrates at room temperature. The obtained ITO films were annealed at 400 °C for different annealing times (1, 2, 5, 7, and 9 h). The effect of annealing time on their structural, optical and electrical properties was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM), ultra violet–visible (UV–Vis) spectrometer, and temperature dependence Hall measurements. XRD data of obtained ITO films reveal that the films were polycrystalline with cubic structure and exhibit (222), (400) and (440) crystallographic planes of In₂O₃. AFM and Scanning Electron Microscopy SEM have been used to probe the surface roughness and the morphology of the films. The refractive index (n), thickness and porosity (%) of the films were evaluated from transmittance spectra obtained in the range 350–700 nm by UV–Vis. The optical band gap of ITO film was found to be varying from 3.35 to 3.47 eV with the annealing time. The annealing time dependence of resistivity, carrier concentration, carrier mobility, sheet resistance, and figure of merit values of the films at room temperature were discussed. The carrier concentration of the films increased from 1.21 × 10²⁰ to 1.90 × 10²⁰ cm^?3, the Hall mobility increased from 11.38 to 18 cm² V^?1 s^?1 and electrical resistivity decreased from 3.97 × 10^?3 to 2.13 × 10^?3 Ω cm with the increase of annealing time from 1 to 9 h. Additionally, the temperature dependence of the carrier concentration, and carrier mobility for the as-deposited and 400 °C annealed ITO films for 2 and 9 h were analysed in the temperature range of 80–350 K.     

Tungsten Oxide Thin Film Characterizations for Acetone Gas Detection

The gas sensing properties and topology of tungsten oxide thin films deposited by reactive-ion radio frequency magnetron sputtering at room temperature have been investigated. The abnormalities in behaviour of sensing film are observed when acetone gas is flowed over surface. The reduction reaction of surface and oxidation reaction of acetone gas have been studied. As the gas comes in contact with the surface, the molecules tend to reduce the surface, hence decreasing the resistance. The sensing film was annealed to 500 °C for 1 h for the purpose of achieving a suitable grain size for sensing to take place. Operational optimum temperature for sensing has been computed to be 260 °C. A grain size of 7.3 nm has been computed through analysis of AFM image and a film thickness of 100 nm has been calculated through surface profiler. The SEM image of the film demonstrates the grains developed on the surface. The XRD patterns reveal that the oxide showed up as WO₂. It has been observed that the response percentage is approximately 30% for acetone vapour concentration of 20 ppm and approximately 18% for the concentration of 15 ppm. The response time of the sensor is approximately 5 min and the recovery time is 4 min.     

Effects of rf power on the structural properties of carbon nitride thin films prepared by plasma enhanced chemical vapour deposition

Carbon nitride (CN_x) thin films were deposited by radio frequency plasma enhanced chemical vapour deposition (rf PECVD) technique from a gas mixture of methane (CH₄), hydrogen (H₂) and nitrogen (N₂). The effects of rf power on the structural properties of CN_x thin films were discussed in this paper. It was found that rf power had significant effects on the growth rate, structural and morphological properties of the deposited films. The point of transition of the growth rate trend marked the equilibrium condition for primary and secondary reactions in growth kinetics of the film with respect to rf power. The films grown at this optimum rf power were most ordered in structure with high surface roughness and had the lowest N incorporation. This work showed that H etching effects and ion bombardment effects increase with increase in rf power and strongly influenced the structure of the CN_x films.     

Influence of deposition parameters and heat treatment on the NO2 sensing properties of nanostructured indium tin oxide thin film

Highly oriented and transparent indium tin oxide (ITO) films have been deposited onto glass substrates by radio frequency magnetron sputtering at 648 K, under an oxygen partial pressure of 1 Pa. The effect of the sputtering power and annealing was studied. Transmission was measured with a double beam spectrometer and electrical analysis using four probe and Hall effect setup. Structural characterization of the films was done by X-ray diffraction. Characterization of the coatings revealed an electrical resistivity below 6.5 × 10^− 3 Ω cm. The ITO films deposited at 648 K were amorphous, while the crystallinity improved after annealing at 700 K. The optical transmittance of the film was more than 80% in the visible region. The surface morphology examined by scanning electron microscopy appears to be uniform over the entire surface area, after annealing. The NO₂ sensing properties of the ITO films were investigated. At a working temperature of 600 K, the ITO sensor showed high sensitivity to NO₂ gas, at concentrations lower than 50 ppm.     

Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

Gas sensors using metal oxides have several advantageous features such as simplicity in device structure and low cost fabrication. In this work, Tin-doped indium oxide (ITO) films were prepared by the screen printing technique onto glass substrates. The granular and porous structure of screen-printed ITO are suitable for its use in gas sensing devices. The resistance of the ITO films was found to be strongly dependent on working temperatures and the nature and concentration of the ambient gases. We show that screen-printed ITO films have good sensing properties toward NH₃ vapours. The observed behaviors are explained basing on the oxidizing or the reducer nature of the gaseous species that react on the surface of the heated semi-conducting oxide.     

Structural,electrical, optical properties and reliability of ultra-thin tin doped indium oxide films for touch panels

Ultra-thin ITO films with thickness of 4–56 nm were deposited on glass by dc magnetron sputtering using 5 wt% SnO₂ doped ITO target. The effect of film thickness on the structural, electrical, optical properties and reliability was investigated for its application to touch panels. The 4 nm thick ITO film shows amorphous structure and other films present polycrystalline structure and the (222) preferred orientation. The ultra-thin ITO films show smooth surface with low Ra surface roughness smaller than 1 nm. The sheet resistance and visible transmittance of the ITO films decrease with the increase in film thickness. The 4 nm thick ITO film shows the highest resistivity (3.08 × 10^?3 Ω cm) with low carrier density and Hall mobility, and other films have excellent conductivity (<4.0 × 10^?4 Ω cm). The ITO films show high transmittance (>85 %) in visible light range and do not generate interference ripples between film and substrate interface. The ITO films with thickness of 18–56 nm show stable reliability under high temperature, high temperature & high humidity and alkaline environmental conditions. The only electrical degradation corresponds to the increase of sheet resistance in the ITO films with thickness of 4–12 nm.     

Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications

Nanocrystalline indium tin oxide (ITO) film containing 5 wt% Sn was prepared on glass substrate by the spray pyrolysis technique at a substrate temperature of 500 °C. In order to enhance the photosensitivity of ITO, thiourea (CS(NH₂)₂ was added to the precursor to obtain the [S]/[In] proportion of 0.1, 0.2, 0.4 and 0.6. The X-ray diffraction patterns showed that beside the bixbyite structure of ITO, the characteristic peaks corresponding to Sn₂S₃ appeared in XRD profiles recorded for the films with [S]/[In] = 0.1 and 0.2. In addition, sulfur additive caused a considerable decline in crystallinity quality. The optical properties of the films were studied using transmittance measurements in the wavelength range 300–1,000 nm. As a result, ITO and ITO-Sn₂S₃ thin films were prepared with resistivity of 3.06–3.7 × 10^?4 Ω cm and a transmittance of 88–91 % at the wavelength of 550 nm. Moreover, the electrical resistances of ITO and ITO-Sn₂S₃ films as a function of time were measured in darkness and under illumination of light in the visible range. The photoresistance results revealed that the ITO-Sn₂S₃ film with [S]/[In] = 0.2 was efficiently sensitive to visible light for photoconductive sensor applications, besides being high conductive and transparent.     

Novel method for fabrication of NiO sensor for NO2 monitoring

Nickel oxide (NiO) sensor films were prepared on glass substrate by a sol–gel spin coating technique. These films were characterized for their structural and morphological properties by means of X-ray diffraction, field emission scanning microscopy and atomic force microscopy. The NiO films are oriented along (200) plane with the cubic crystal structure. These films were utilized in nitrogen dioxide gas (NO₂) sensor. The dependence of the NO₂ response on operating temperature, NO₂ concentration was investigated. The NiO film showed selectivity for NO₂ over Cl₂ compared to H₂S $ \left( {{\text{S}}_{{{\text{NO}}_{ 2} }} /{\text{S}}_{{{\text{Cl}}_{ 2} }} = 3 7. 5,{\text{ S}}_{{{\text{NO}}_{ 2} }} /{\text{S}}_{{{\text{H}}_{ 2} {\text{S}}}} = 3. 4} \right) $ . The maximum NO₂ response of 23.3 % with 85 % stability at gas concentration of 200 ppm at 200 °C was achieved. The response time of 20 s and recovery time of 498 s was also recorded with same operating parameters.     

Detection of H2S gas at lower operating temperature using sprayed nanostructured In2O3 thin films

Nanostructured indium oxide (In₂O₃) thin films were prepared by spray pyrolysis (SP) technique. X-ray diffraction (XRD) was used to investigate the structural properties and field emission scanning electron microscopy (FESEM) was used to confirm surface morphology of In₂O₃ films. Measurement of electrical conductivity and gas sensing performance were conducted using static gas sensing system. Gas sensing performance was studied at different operating temperature in the range of 25–150 °C for the gas concentration of 500 ppm. The maximum sensitivity (S = 79%) to H ₂ S was found at lower temperature of 50 °C. The quick response (4 s) and fast recovery (8 s) are the main features of this film.     

Effects of hydrogen gas on properties of tin-doped indium oxide films deposited by radio frequency magnetron sputtering method

Tin-doped indium oxide (ITO) films were deposited at ∼ 70 °C of substrate temperature by radio frequency magnetron sputtering method using an In₂O₃-10% SnO₂ target. The effect of hydrogen gas ratio [H₂ / (H₂ + Ar)] on the electrical, optical and mechanical properties was investigated. With increasing the amount of hydrogen gas, the resistivity of the samples showed the lowest value of 3.5 × 10^− 4 Ω·cm at the range of 0.8-1.7% of hydrogen gas ratio, while the resistivity increases over than 2.5% of hydrogen gas ratio. Hall effect measurements explained that carrier concentration and its mobility are strongly related with the resistivity of ITO films. The supplement of hydrogen gas also reduced the residual stress of ITO films up to the stress level of 110 MPa. The surface roughness and the crystallinity of the samples were investigated by using atomic force microscopy and x-ray diffraction, respectively.     

Structural,morphological, optical and gas sensing properties of pure and Ce doped SnO<Subscript>2</Subscript> thin films prepared by jet nebulizer spray pyrolysis (JNSP) technique

Pure and cerium (Ce) doped tin oxide (SnO₂) thin films are prepared on glass substrates by jet nebulizer spray pyrolysis technique at 450 °C. The synthesized films are characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive analysis X-ray, ultra violet visible spectrometer (UV–Vis) and stylus profilometer. Crystalline structure, crystallite size, lattice parameters, texture coefficient and stacking fault of the SnO₂ thin films have been determined using X-ray diffractometer. The XRD results indicate that the films are grown with (110) plane preferred orientation. The surface morphology, elemental analysis and film thickness of the SnO₂ films are analyzed and discussed. Optical band gap energy are calculated with transmittance data obtained from UV–Visible spectra. Optical characterization reveals that the band gap energy is found decreased from 3.49 to 2.68 eV. Pure and Ce doped SnO₂ thin film gas sensors are fabricated and their gas sensing properties are tested for various gases maintained at different temperature between 150 and 250 °C. The 10 wt% Ce doped SnO₂ sensor shows good selectivity towards ethanol (at operating temperature 250 °C). The influence of Ce concentration and operating temperature on the sensor performance is discussed. The better sensing ability for ethanol is observed compared with methanol, acetone, ammonia, and 2-methoxy ethanol gases.     

Effect of annealing temperature on structural,optical and humidity sensing properties of indium tin oxide (ITO) thin films

Tin doped indium oxide (ITO) thin films were prepared by sol–gel spin coating method with In (NO₃)·3H₂O and SnCl₄·5H₂O as indium and tin sources, respectively. The as deposited samples were annealed at various temperature such as, 300, 400, 500 and 600?°C for 2 h in ambient atmosphere. The grown ITO thin films are polycrystalline in nature with cubic structure of In₂O₃ with the space group La3 and the results are in good agreement with the standard JCPDS data (card no#06-0416). In addition crystalline size increases with increasing annealing temperature from 25 to 55 nm. Polycrystalline with uniform smooth surface was observed by SEM micrographs. The optical band gap energy was found to be decreased from 3.85 to 3.23 eV as the annealing temperature is increased from 300 to 600?°C. The humidity sensing performance (high sensitivity and fast response time) was significantly improved for 600?°C thin films samples, which is probably due to smaller energy band gap and physisorption between the water molecules and the surface of the thin films. The films were further characterized by PL and EDS analysis. The effect of temperature on humidity sensing mechanism of ITO thin films is also discussed.     

Effect of processing and palladium doping on the properties of tin oxide based thick film gas sensors

In the present work, solid-state reaction and sol–gel route derived pure tin oxide (SnO₂) powders have been used to develop the palladium (Pd)-doped SnO₂ thick film sensors for detection of liquefied petroleum gas (LPG). Efforts have been made to study the gas sensing characteristics i.e., sensor response, response/recovery time and repeatability of the thick film sensors. The response of the sensors has been investigated at different operating temperatures from 200 to 350 °C in order to optimise the operating temperature which yields the maximum response upon exposure to fixed concentration of LPG. The optimum temperature is kept constant to facilitate the gas sensing characteristics as a function of the various concentration (0.25–5 vol%) of LPG. The structural and microstructural properties of Pd-doped SnO₂ powder and developed sensors have been studied by performing X-ray diffraction and field emission electron microscopy measurements. The improvement in the response along with better response and recovery time have been correlated to the reduction in crystallite size of SnO₂ powder and morphology of printed sensor in thick film form. It is found that the thick film sensor developed by using sol–gel route derived SnO₂ powder with an optimum doping of 1 wt% Pd is extremely sensitive (86 %) to LPG at 350 °C.     

Formation and properties of cadmium sulfide buffer layer for CIGS solar cells grown using hot plate bath deposition

In the present study, cadmium sulfide (CdS) thin films were deposited on different substrates [soda glass, fluoride doped tin oxide, and tin doped indium oxide (ITO) coated glass] by a hot plate method. To control the thickness and the reproducibility of the sample production, the thin films were coated at different temperatures and deposition times. The CdS thin films were heated at 400 °C in air and forming gas (FG) atmosphere to investigate the effect of the annealing temperatures. The thickness of the samples, measured by ellipsometry, could be controlled by the deposition time and temperature of the hot plate. The phase formation and structural properties of CdS thin films were studied by X-ray diffraction and scanning electron microscopy, whereas the optical properties were obtained by UV–vis spectroscopy. A hexagonal crystal structure was observed for CdS thin films and the crystallinity improved upon annealing. The structural and optical properties of CdS thin films were also enhanced by annealing at 400 °C in FG atmosphere (95 % N₂, 5 % H₂). The optical band gap was changed from 2.25 to 2.40 eV at different annealing temperatures and gas atmospheres. A higher electrical conductivity, for the sample annealed at FG, was noticed. The samples deposited on ITO and annealed in FG atmosphere showed the best structural and electrical properties compared to the other samples. CdS thin films can be widely used for application as a buffer layer for copper–indium–gallium–selenide solar cells.     

Ethanol gas sensing properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-doped ZnO thick film resistors

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al₂O₃ (1 wt%) doped ZnO were observed to be highly sensitive to ethanol vapours at 300°C. Aluminium oxide grains dispersed around ZnO grains would result into the barrier height among the grains. Upon exposure of ethanol vapours, the barrier height would decrease greatly leading to drastic increase in conductance. It is reported that the surface misfits, calcination temperature and operating temperature can affect the microstructure and gas sensing performance of the sensor. The efforts are, therefore, made to create surface misfits by doping Al₂O₃ into zinc oxide and to study the sensing performance. The quick response and fast recovery are the main features of this sensor. The effects of microstructure and additive concentration on the gas response, selectivity, response time and recovery time of the sensor in the presence of ethanol vapours were studied and discussed.     

Structural and optical properties of nc-Si:H thin films deposited by layer-by-layer technique

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited on c-Si and quartz substrates by layer-by-layer (LBL) technique using radio-frequency plasma enhanced chemical vapour deposition system. The effects of rf power on the interlayer elemental profiling, structural and optical properties of the films were investigated by Auger electron spectroscopy, Fourier transform infrared spectroscopy, Raman scattering spectroscopy, X-ray diffraction and optical transmission and reflection spectroscopy. The results revealed that the LBL deposition leads to a formation of different ranges of crystallite sizes of nc-Si corresponds 3–6 and 8–26 nm respectively. LBL deposition also demonstrated a capability to increase the crystalline volume fraction of nc-Si up to 65.3 % with the crystallite size in between 5 and 6 nm, at the rf power in between 80 and 100 W. However, the crystalline volume fraction decreased for the rf power above 100 W due to the growth of nc-Si was suppressed by the formation of SiO₂. In addition, the onset of crystallization of the films deposited on c-Si and quartz substrates are different with increase in the rf power. The effects of rf power on the growth of nc-Si, and the hydrogen content, structural disorder, crystallite size of nc-Si and oxygen diffusion into the LBL layer with the change of optical energy gap under the variation of rf power are also discussed.