SiH2Cl2-NH3-N2体系热壁LPCVD Si3N4膜工艺研究

介绍了利用SiH2Cl2-NH3-N2体系LPCVD制备Si3N4薄膜的工艺,借助椭圆偏振仪研究了薄膜的厚度及折射率.结果表明当原料气中氨气与二氯甲硅烷的流量之比(R)较小时(R≤2),获得富Si的Si3N4薄膜,折射率较高.当氨气远远过量时(R＞4),折射率处于1.95～2.00之间.在适当的工艺条件下,获得的Si3N4薄膜表面均匀、平整,折射率达到理想值.     

ICPECVD法制备氧化硅薄膜的工艺研究

以SH_4和O_2作为反应气体,利用电感耦合等离子体增强型化学气相淀积(ICPECVD)技术制备了氧化硅薄膜,通过正交试验设计的方法研究了反应室压强、衬底温度和射频功率3个关键工艺参数对氧化硅薄膜淀积速率的影响及其显著性。实验结果表明:反应室压强和射频功率对淀积速率的影响具有高度显著性,各参数对刻蚀速率的影响程度依次为反应室压强射频功率衬底温度,并讨论了所选参数对淀积速率的影响机理。     

低压化学气相淀积多晶硅薄膜工艺研究

在研制器件过程中，多晶硅制备的工艺条件对其性能影响较大。讨论了低压化学气相淀积（LPCVD）关键材料多晶硅薄膜的基本原理，考察了工作压力、反应温度等对多晶硅薄膜淀积速率的影响，以及影响多晶硅薄膜质量的因素，提出了改进措施，优化了多晶硅制备工艺参数，制备了合格的多晶硅薄膜。     

CVD-Si3N4薄膜工艺及性能研究

以三氯硅烷和氨气作为硅源和氮源，利用低压化学气相沉积工艺（LPCVD）在烧结氮化硅表面制备氮化硅薄膜。考察了工艺参数对沉积速率的影响，并对薄膜的组成、结构及硬度等性能进行了分析。结果表明，当载气为N2或N2＋H2、沉积温度为800℃、NH3／HSiCl3流量比为4时是较佳的工艺条件，此时薄膜沉积速率可达23．4nm／min，其膜层主要由Si-N组成，并含有部分Si-O，硬度为HV2865。     

PECVD氮化硅薄膜制备工艺研究

通过原子力显微镜和台阶仪观察测试PECVD氮化硅薄膜的表面形貌及其在HF缓冲液中的被腐蚀速率,研究了用SiH4和NH3作反应气体时,影响PECVD氮化硅薄膜均匀性、致密性、淀积速率、被腐蚀速率的几个关键因素,并对一些常用的工艺参数进行了总结.     

Ti-DLC薄膜在水介质中的摩擦学特性

采用非平衡磁控溅射法在Si(100)片和M2工具钢上制备Ti-DLC薄膜。通过X射线光电子能谱仪、拉曼光谱仪和扫描电子显微镜分析薄膜的结构以及微观形貌;利用球-盘摩擦磨损试验机研究不同载荷下Ti-DLC/Si-3N-4对摩副在水中的摩擦学特性。结果表明,Ti-DLC薄膜具有致密的表面结构,含有较多的C-Csp2键;摩擦介质为去离子水时,薄膜的摩擦因数随着载荷的增加先减小后增大,且载荷增加到一定值后,摩擦因数几乎不再变化; 薄膜磨损率随着载荷的增加先升高后降低,而相应的Si3N4小球磨损率却是先减小后增大, 这主要是由于Si3N4在水中易于发生水合反应,促使摩擦接触表面变得非常平滑,从起到降低摩擦因数,在一定程度上减少磨损的作用。     

光学薄膜淀积的计算机仿真

介绍了利用计算机对光学薄膜淀积过程进行仿真,编写了基于Matlab的计算机仿真程序.对采用反射率极值法监控的镀膜系统的薄膜淀积结果以及薄膜淀积过程中监控片透射率的实时变化进行了模拟,根据模拟结果所计算的薄膜的光学特性曲线与成膜的实测结果一致.     

光学薄膜淀积的计算机仿真

介绍了利用计算机对光学薄膜淀积过程进行仿真,编写了基于Matlab的计算机仿真程序.对采用反射率极值法监控的镀膜系统的薄膜淀积结果以及薄膜淀积过程中监控片透射率的实时变化进行了模拟,根据模拟结果所计算的薄膜的光学特性曲线与成膜的实测结果一致.     

烧结助剂La2O3含量对热压烧结制备Si3N4-AlN复相陶瓷性能的影响

以Si3N4和AlN为原料,La2O3为烧结助剂,在氮气气氛和1 800℃、30 MPa压力下热压烧结保温1 h制备出了Si3N4-AlN复相陶瓷,研究了La2O3含量对复相陶瓷烧结性能、抗弯强度、热导率及介电损耗的影响.结果表明:随La2O3含量的增加,复相陶瓷的孔隙率先减小然后趋于稳定,Si3N4由α相向β相逐渐转...     

PECVD法硅基氮化硅薄膜的制备及其耐磨性研究

以N(111) 型的单晶硅片为基体,运用PECVD-2D等离子体化学气相淀积台在单晶硅片表面沉积氮化硅薄膜,通过薄膜颜色与厚度间的关系探讨了制备工艺参数对薄膜厚度的影响,用原位纳米力学测试系统对氮化硅薄膜的纳米硬度进行测定,在UMT-2型摩擦试验机上对不同制备工艺的硅基氮化硅薄膜进行耐磨寿命试验.结果表明:随着沉积温度的升高,薄膜厚度逐渐递减,SiH4和N2流量比越大,薄膜厚度越大;温度越高,薄膜硬度越大,耐磨寿命越长;随着SiH4和N2流量比的增加,薄膜硬度和耐磨寿命均先增加后减小.     

射频磁控反应溅射法制备Y2O3薄膜的工艺研究

采用射频磁控反应溅射法制备氧化钇(Y2O3)薄膜。系统研究了工艺参数对Y2O3薄膜沉积速率的影响规律,使用X射线光电子能谱仪(XPS)分析表征了薄膜的成分。结果表明,Y2O3薄膜的沉积速率随射频功率的增大而增大,在合适的溅射压强下沉积速率呈现极大值,O2/Ar气体流量比和衬底温度的影响不明显,对此从理论上进行了解释。制备的薄膜中Y和O元素的原子浓度基本符合Y2O3的化学计量比。     

掺杂Gd2O3对ZrO2薄膜负非均匀性的影响

ZrO2膜层具有明显的负非均匀性,严重影响了在光学薄膜制备中的应用,特别是对多层增透膜有明显的影响。通过对膜层微观结构及生长成核过程的研究,揭示了ZrO2膜层负非均匀性产生的原因及特点。基于此,在ZrO2膜料中掺如一定量的Gd2O3膜料,在电子柬蒸发和适当的真空度、淀积速率、基底温度等工艺条件下,明显地降低了ZrO2膜层折射率的负非均匀性,从而提高ZrO2膜层光学使用性能。     

射频磁控溅射法制备MoS2/SiC双层薄膜

采用射频磁控溅射法在室温、500℃的单晶硅和GCr15钢基体上制备了MoS2/SiC双层薄膜,并借助X射线衍射仪、扫描电子显微镜、摩擦磨损试验机以及划痕仪等研究了薄膜的结构、形貌、成分、摩擦学性能以及薄膜与基体的结合力。结果表明:当衬底温度为500℃时制备的MoS2/SiC双层薄膜表面致密平整,两层薄膜之间界面平直,膜厚约为0.8μm;该双层膜的摩擦因数低,耐磨性好;添加中间层可提高薄膜与基体的结合力。     

Influence of target grit count and sintering temperature on pulsed laser deposition of SiC thin films

A pulsed laser deposition (PLD) technique for depositing SiC on Si(100) substrates using Nd³⁺:YAG laser at 355 nm is studied. The influence of substrate temperature, ambient pressure, and SiC powder grit size on both structure and morphology of SiC thin film is investigated. Further, the influence of the target preparation on the reduction of droplet formation during Nd³⁺:YAG laser-assisted pulsed laser deposition of SiC thin films is investigated. Experimental studies show that multicrystalline SiC film can be obtained with temperature ranging from 600 to 700 °C and at an ambient pressure of about 5.5 × 10^?3 Pa. Further, droplet formation on the deposited film was reduced significantly by selecting the grit count of SiC powder 500 and the pressure of 2 × 10^?2 Pa. SiC target sintered at 1,600 °C showed a reduced wear during the laser ablation. The X-ray diffraction (XRD) and the Raman spectroscopy studies on deposited films clearly show the multicrystalline (combined 3C-SiC and 4H-SiC) nature of SiC films. I-V characteristics of deposited SiC film on n-type c-Si substrate also indicated that SiC thin film possesses P-type semiconductor properties.     

沉积温度对脉冲真空弧源沉积类金刚石薄膜性能的影响

利用脉冲真空弧源沉积技术在Cr17Ni14Cu4不锈钢和Si(100)基体上制备了类金刚石(DLC)薄膜,研究了基体沉积温度对DLC薄膜的性能和结构的影响。研究表明,随着沉积温度由100 ℃提高到400 ℃,DLC薄膜中sp3 键质量分数减少,sp2键质量分数增多,薄膜复合硬度逐渐降低。当DLC薄膜沉积温度达到400 ℃时,薄膜中C原子主要以sp2键形式存在,与沉积温度为100 ℃时制备的DLC薄膜相比,薄膜复合硬度降低50%。DLC薄膜具有优异的耐磨性,摩擦因数低,随着沉积温度由100 ℃提高到400 ℃,Cr17Ni14Cu4不锈钢表面沉积的DLC薄膜耐磨性降低。沉积温度为100 ℃时,Cr17Ni14Cu4不锈钢表面沉积的DLC薄膜后,耐磨性大幅度提高。DLC薄膜与不锈钢基体结合牢固。     

射频磁控溅射法制备类金刚石薄膜的研究

采用射频磁控溅射法,纯Ar溅射石墨靶,制备出了类金刚石薄膜,并对薄膜沉积速率随各工艺参数的变化规律、薄膜结构以及光学性能进行了系统的研究。结果表明,沉积速率随射频功率、CH4流量和溅射气压的增大而增大;随温度的增大呈现先增大后小的趋势。结构分析发现,所制备的DLC薄膜是由sp2键镶嵌在sp3键基体中构成的。在3μm~5μm波段对Si衬底有明显的增透效果。     

Physical properties of ultrafast deposited micro- and nanothickness amorphous hydrogenated carbon films for medical devices and prostheses

Hydrogenated amorphous carbon films with diamond-like structures have been formed on different substrates at very low energies and temperatures by a plasma-enhanced chemical vapour deposition (PECVD) process employing acetylene as the precursor gas. The plasma source was of a cascaded arc type with argon as the carrier gas. The films grown at very high deposition rates were found to have a practical thickness limit of approximately 1.5 microm, above which delamination from the substrate occurred. Deposition on silicon (100), glass, and plastic substrates has been studied and the films characterized in terms of sp3 content, roughness, hardness, adhesion, and optical properties. Deposition rates of up to 20 nm/s have been achieved at substrate temperatures below 100 degrees C. A typical sp3 content of 60-75 per cent in the films was determined by X-ray-generated Auger electron spectroscopy (XAES). The hardness, reduced modulus, and adhesion of the films were measured using a MicroMaterials NanoTest indenter/scratch tester. Hardness was found to vary from 4 to 13 GPa depending on the admixed acetylene flow and substrate temperature. The adhesion of the film to the substrate was significantly influenced by the substrate temperature and whether an in situ d.c. cleaning was employed prior to the deposition process. The hydrogen content in the film was measured by a combination of the Fourier transformation infrared (FTIR) spectroscopy and Rutherford backscattering (RBS) techniques. From the results it is concluded that the films formed by the process described here are ideal for the coating of long-term implantable medical devices, such as prostheses, stents, invasive probes, catheters, biosensors, etc. The properties reported in this publication are comparable with good-quality films deposited by other PECVD methods. The advantages of these films are the low ion energy and temperature of deposition, ensuring that no damage is done to sensitive substrates, very high deposition rates, relatively low capital cost of the equipment required, and the ease of adjustment of plasma parameters, which facilitates film properties to be tailored according to the desired application.     

真空电弧沉积薄膜显微硬度与工艺参数的关系

测试了各种工艺条件下真空电弧沉积 (VAD)的TiN薄膜的显微硬度 ,并研究了TiN薄膜硬度随基材、电弧电流、基片温度、氮气压力及负偏压的变化。实验结果表明 :在多数基材上 ,薄膜硬度均接近或超过 2 0GPa ,且薄膜的硬度与基材的硬度不呈比例关系 ,TiN薄膜的硬度随电流的增加有减少的趋势 ;在相当宽的温区内 ,TiN薄膜的硬度随温度上升而增大 ,而且在高温下的硬度值比低温时稳定 ,总体上 ,VAD比其它离子镀具有更宽阔的T区 ;在氮气压力为 0 .1Pa～ 1Pa的区域内 ,TiN薄膜的硬度稳定在 2 0MPa以上 ,而且适当的负偏压有利于提高TiN薄膜的硬度。     

静电辅助气溶胶化学气相沉积法制备Al_2O_3薄膜

以乙酰丙酮铝为前驱体,N,N-二甲基甲酰胺为溶剂,采用静电辅助的气溶胶化学气相沉积(ESAVD)方法,在Si(100)衬底上制备了Al2O3薄膜,并采用场发射扫描电镜、能谱仪、X射线衍射仪和自动划痕仪等设备对制备的薄膜进行了表征。结果表明:采用ESAVD法制备的Al2O3薄膜平整致密而且晶粒细小,薄膜与基体之间及薄膜内部都未出现开裂现象;薄膜与基体的结合力约为5.56 N;沉积得到的薄膜为化学计量比为2∶3的氧化物薄膜;退火前的薄膜为非晶态,在1 200℃退火保温2 h后薄膜转变为-αAl2O3。     

Reducing Friction Force of Si Material by Means of Atomic Layer-Deposited ZnO Films

With excellent lubricating property, zinc oxide (ZnO) films are promising candidates to act as protective coatings in Si-based microelectromechanical system devices for the purpose of decreasing friction forces of silicon (Si) material. In this paper, the nanotribological behavior of ZnO films prepared by atomic layer deposition on a Si (100) substrate is investigated by an atomic force microscope. The ZnO films have various thicknesses ranging from 10.0 to 182.1 nm. With the increase of film thickness, the root-mean-square roughness of the films increases, while the ratio of hardness to Young’s modulus (H/E) decreases. Due to their large surface roughness, the thick ZnO films are low in adhesion force. The friction force of the ZnO films is smaller than that of the Si (100) substrate and is greatly influenced by their adhesion force and mechanical property. In a low-load condition, the friction force is dominated by the adhesion force, and thus, the friction force of the ZnO films decreases as film thickness increases. While in a high-load condition, the friction force is dominated by plowing. Films with higher H/E possess smaller friction force, and thus, the friction force increases with the decreasing film thickness.