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1.
The photoelectric properties of thin-film ZnO/CdS/Cu(In,Ga)Se2 solar cells were studied by polarization photoactive absorption spectroscopy. It was shown that the thin-film solar cells
have a high efficiency relative to the intensity of unpolarized radiation in the photon energy range from 1.2 to 2.5 eV. The
induced photopleochroism coefficient P
I
increases with the angle of incidence of the incident radiation as P
I
∼θ
2
and at 70° it reaches 17–20% with photon energy 1.3 eV. Oscillations of the photopleochroism were also observed. These results
are discussed taking into account the antireflection effect. The results obtained by us make it possible to use such solar
cells as wide-band photosensors for linearly polarized radiation and for monitoring the production of high-efficiency, thin-film
solar cells based on ternary semiconductors.
Fiz. Tekh. Poluprovodn. 31, 806–810 (July 1997) 相似文献
2.
Optical and recombination losses in a Cu(In,Ga)Se2 thin-film solar cell with a band gap of 1.36–1.38 eV are theoretically analyzed. The optical transmittance of the ZnO and CdS layers through which the radiation penetrates into the absorbing layer is determined. Using optical constants, the optical loss caused by reflection at the interfaces (7.5%) and absorption in the ZnO and CdS layers (10.2%) are found. To calculate the recombination loss, the spectral distribution of the quantum efficiency of CdS/CuIn1–xGaxSe2 is investigated. It is demonstrated that, taking the drift and diffusion components of recombination at the front and rear surfaces of the absorber into account, the quantum efficiency spectra of the investigated solar cell can be analytically described in detail. The real parameters of the solar cell are determined by comparing the calculated results and experimental data. In addition, the losses caused by the recombination of photogenerated carriers at the front and rear surfaces of the absorbing layer (1.8% and <0.1%, respectively), at its neutral part (7.6%), and in the space-charge region of the p–n heterojunction (1.0%) are determined. A correction to the parameters of Cu(In,Ga)Se2 is proposed, which enhances the charge-accumulation efficiency. 相似文献
3.
V. B. Zalesski V. Yu. Rud’ V. F. Gremenok Yu. V. Rud’ T. R. Leonova A. V. Kravchenko E. P. Zaretskaya M. S. Tivanov 《Semiconductors》2007,41(8):973-978
The method of heat treatment of metallic Cu-In-Ga layers in the N2 inert atmosphere in the presence of selenium and sulfur vapors was used to grow homogeneous films of Cu(In,Ga)(S,Se)2 alloys onto which the CdS or In2S3 films were deposited and, on the basis of these structures, the thin-film glass/Mo/p-Cu(In,Ga) (S,Se)2/n-(In2S3,CdS)/n-ZnO/Ni-Al photoelements were fabricated. The mechanisms of charge transport and the processes of photosensitivity in the obtained structures subjected to irradiation with natural and linearly polarized light are discussed. The broadband photosensitivity of thin-film heterophotoelements and the induced photopleochroism were detected; these findings indicate that there is an interference-related blooming of the structures obtained. It is concluded that it is possible to use ecologically safe cadmium-free thin-film heterostructures as high-efficiency photoconverters of solar radiation. 相似文献
4.
Results of the application of polarization spectroscopy of the photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 thin-film solar cells with different thicknesses of the CdS (50 and 100 nm) and ZnO (500 and 1000 nm) layers are considered.
It is established that the induced photopleochroism coefficient is lowered while the quantum efficiency of photoconversion
of the solar cells is raised by increasing the thickness of the front layer. The experimental conditions and spectral dependence
of the induced photopleochroism are linked with the antireflection properties of the ZnO front layers. It is concluded that
photosensitivity polarization spectroscopy can be used for rapid diagnostics of finished solar cells and to optimize their
fabrication technology.
Fiz. Tekh. Poluprovodn. 33, 484–487 (April 1999) 相似文献
5.
Miguel A. Contreras Andrew M. Gabor Andrew L. Tennant Sally Asher John Tuttle Rommel Noufi 《Progress in Photovoltaics: Research and Applications》1994,2(4):287-292
This communication reports an MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo/glass polycrystalline solar cell with a confirmed total-area conversion efficiency of 16.4%. the thin-film Cu(In,Ga)Se2 absorber was fabricated by computer-controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance-voltage (C-V) measurements also reveal a graded doping profile in the region near the electronic p-n junction. the enhanced device performance is characterized by an open-circuit voltage (Voc) of 660 mV and a particularly high fill factor (FF) of 78.7%. 相似文献
6.
7.
V. F. Gremenok G. A. Il’chuk S. E. Nikitin V. Yu. Rud’ Yu. V. Rud’ 《Semiconductors》2005,39(2):202-205
Thin-film n-ZnO:Al/p-Cu(In,Ga)Se2 heterojunctions are fabricated by magnetron sputtering of an ZnO target, leading to a deposition of Cu(In,Ga)Se2 films on the surface. The photoelectric properties of the fabricated heterojunctions are studied under exposure to natural and linearly polarized light. It is concluded that the resulting cadmium-free environmentally safe heterostructures can be used as high-efficiency broad-band photoconverters of natural and linearly polarized light. 相似文献
8.
Emtsev V. V. Nikolaev Yu. A. Poloskin D. S. Rud’ V. Yu. Rud’ Yu. V. Terukov E. I. Yakushev M. V. 《Semiconductors》2005,39(12):1406-1409
Semiconductors - The effect of irradiation with γ-ray photons (Co60) on photoconversion in the thin-film ZnO/CdS/Cu(In, Ga)Se2 heterostructure photocells exposed to natural and linearly... 相似文献
9.
G. A. Il’chuk V. V. Kus’nézh R. Yu. Petrus’ V. Yu. Rud’ Yu. V. Rud’ V. O. Ukrainets 《Semiconductors》2007,41(1):52-54
The hexagonal modification of In2Se3 single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In2Se3, which are photosensitive in a wide incident-photon energy range of 1–3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters. 相似文献
10.
Results of the study of the kinetics of isothermal polarization current in As2Se3 films are presented. In the samples under study, intense relaxation processes related to the accumulation of bulk charge in the metal-semiconductor contact area occur. The experimental results are interpreted using the model of the relay conductivity mechanism. 相似文献
11.
Using the method of planar crystallization from the melt with deviations from the stoichiometric composition, p-CuIn3Se5 single crystals are grown. The electrical properties of the homogeneous crystals are studied. It is found that the resistivity of the p-CuIn3Se5 crystals depends on the excess Se content in the melt. It is established that the voltaic photosensitivity of the In/CuIn3Se5 structures is enhanced with an increasing excess of Se content in the melt. The energy spectrum and the character of interband transitions in the CuIn3Se5 crystals are discussed. It is concluded that the CuIn3Se5 ternary compound can be used in high efficiency photoelectric converters of solar radiation. 相似文献
12.
V. Yu. Rud’ M. S. Tivanov Yu. V. Rud’ V. F. Gremenok E. P. Zaretskaya V. B. Zalesskiĭ T. R. Leonova P. I. Romanov 《Semiconductors》2007,41(10):1173-1177
Using the method of simultaneous sulfurization and selenization of intermetallic Cu-In-Ga layers, single-phase thin films of the Cu(In,Ga)(S,Se)2 (CIGSS) alloys are obtained. On these films, rectifying photosensitive surface-barrier structures In/p-CIGSS are obtained by vacuum thermal evaporation of pure In. The photosensitivity spectra of the originally obtained structures are studied. The effect of the composition of the alloy films and illumination conditions on the photoelectric parameters of new structures In/p-CIGSS is studied. It is concluded that the obtained CIGSS films are promising for fabrication of high-efficiency thin-film photoconverters. 相似文献
13.
S. Yamanaka M. Ishimaru A. Charoenphakdee H. Matsumoto K. Kurosaki 《Journal of Electronic Materials》2009,38(7):1392-1396
The key properties for the design of high-efficiency thermoelectric materials are a low thermal conductivity and a large Seebeck
coefficient with moderate electrical conductivity. Recent developments in nanotechnology and nanoscience are leading to breakthroughs
in the field of thermoelectrics. The goal is to create a situation where phonon pathways are disrupted due to nanostructures
in “bulk” materials. Here we introduce promising materials: (Ga,In)2Te3 with unexpectedly low thermal conductivity, in which certain kinds of superlattice structures naturally form. Two-dimensional
vacancy planes with approximately 3.5-nm intervals exist in Ga2Te3, scattering phonons efficiently and leading to a very low thermal conductivity. 相似文献
14.
I. V. Bodnar G. A. Ilchuk R. Yu. Petrus’ V. Yu. Rud’ Yu. V. Rud’ M. Serginov 《Semiconductors》2009,43(9):1138-1141
In2Se3 single crystals ∼40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals
and their crystal structure were determined. The conductivity (σ) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In2Se3 were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity
spectra of Al/n-In2Se3 structures, the nature of the interband transitions and band gap of In2Se3 crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of
optical radiation. 相似文献
15.
J. R. Tuttle M. A. Contreras T. J. Gillespie K. R. Ramanathan A. L. Tennant J. Keane A. M. Gabor R. Noufi 《Progress in Photovoltaics: Research and Applications》1995,3(4):235-238
We report a world-record, total-area efficiency of 17.1% for a polycrystalline thin-film Cu(In,Ga)Se2-based photovoltaic solar cell. the incorporation of Ga to raise the absorber bandgap has been accomplished successfully and in such a manner that an open-circuit voltage of 654 mV and a fill factor of greater than 77% have been achieved. We describe briefly the deposition process, the device structure, and the device performance characteristics. 相似文献
16.
Spectra of complete sets of optical functions for α-and β-In2Se3 in the range of 0–20 eV were calculated using experimental reflection spectra and the Kramers-Kronig relation. Special features in the spectra of optical functions for both In2Se3 phases were analyzed. The spectra of both permittivity and characteristic electron energy losses were decomposed into elementary transverse and longitudinal components using the combined Argand diagrams. The main parameters of the electron transitions for these components were determined. The structure of the components was compared with the structure of the expected spectrum of interband transitions. 相似文献
17.
L. A D. Kieven J. Chen R. Klenk Th. Rissom Y. Tang M. Ch. Lux‐Steiner 《Progress in Photovoltaics: Research and Applications》2010,18(3):209-213
A ZnO nanorod antireflective coating has been prepared on Cu(In,Ga)Se2 thin film solar cells. This coating leads to a decrease of the weighted global reflectance of the solar cells from 8.6 to 3.5%. It boosts the solar cells short‐circuit current up to 5.7% without significant effect on their open‐circuit voltage and fill factor (FF), which is comparable to a conventional optimized single layer MgF2 antireflective coating. The ZnO nanorod antireflective coating was electrochemically prepared from an aqueous solution at 80°C. The antireflective capability of ZnO nanorod arrays (ZNAs) may be further improved by optimization of growth conditions and their geometry. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
18.
The topology of GaAs(100) and GaAs(111) surfaces before and after short treatments in Se vapor is studied by atomic-force microscopy. On the basis of this study, as well as ellipsometry and electron microscopy, a mechanism for the formation and growth of Ga2Se3(110) nanoislands and a layer on the GaAs(100) and GaAs(111) surfaces is proposed. 相似文献
19.
《Materials Science in Semiconductor Processing》2012,15(2):165-173
Chalcopyrite copper indium gallium diselenide (CIGS) ink was prepared by dissolving copper, indium, gallium acetylacetonate and Se powder in oleylamine using the hot injection methods. CIGS films were deposited on a PET plastic substrate by a screen-printing technique using CIGS ink with a Ga content ranging from 0.3 to 0.6. X-ray diffraction patterns reveal that the films exhibit a chalcopyrite-type structure. The crystalline grain sizes of the films decrease with increasing Ga content. AFM data shows that the root mean square (RMS) surface roughness of the CIGS film decreases with increasing Ga content. The effects of the Ga content in the CIGS absorber layer on the optical properties of the corresponding thin films and solar cells were studied. The band-gap energies of the CIGS thin films increased with an increasing Ga/(In+Ga) ratio. The short-circuit current (ISC) of the solar cell decreased linearly with the Ga/(In+Ga) ratio, while the open-circuit voltage (VOC) increased with this ratio. The solar cell exhibited its highest efficiency of 4.122% at a Ga/(In+Ga) ratio of 0.3. 相似文献
20.
S. Merdes D. Abou‐Ras R. Mainz R. Klenk M. Ch. Lux‐Steiner A. Meeder H. W. Schock J. Klaer 《Progress in Photovoltaics: Research and Applications》2013,21(1):88-93
In this letter, we report externally confirmed total area efficiencies reaching up to 12.9% for CdS/Cu(In,Ga)S2 based solar cells. These are the highest externally confirmed efficiencies for such cells. The absorbers were prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor. Structural, compositional, and electrical properties of one of these champion cells are presented. The correlation between the Ga distribution profile and solar cell properties is discussed. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献