Sunrise to sunset optimization of thin film antireflective coatings for encapsulated,planar silicon solar cells

We present an approach for the optimization of thin film antireflective coatings for encapsulated planar silicon solar cells in which the variations in the incident spectra and angle of incidence (AOI) over a typical day are fully considered. Both the angular and wavelength dependences of the reflectance from the surface, absorptance within the coating, and transmittance into the device are calculated for both single‐ and double‐layer antireflection coatings with and without thin silicon oxide passivation layers. These data are then combined with spectral data as a function of time of day and internal quantum efficiency to estimate the average short‐circuit current produced by a fixed solar cell during a day. This is then used as a figure of merit for the optimization of antireflective layer thicknesses for modules placed horizontally at the equator and on a roof in the UK. Our results indicate that only modest gains in average short‐circuit current could be obtained by optimizing structures for sunrise to sunset irradiance rather than AM1·5 at normal incidence, and fabrication tolerances and uniformities are likely to be more significant. However, we believe that this overall approach to optimization will be of increasing significance for new, potentially asymmetric, antireflection schemes such as those based on subwavelength texturing or other photonic or plasmonic technologies currently under development especially when considered in combination with modules fixed at locations and directions that result in asymmetric spectral conditions. Copyright © 2009 John Wiley & Sons, Ltd.     

19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon

We present a both‐sides‐contacted thin‐film crystalline silicon (c‐Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm². This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short‐circuit current density of 37.8 mA cm⁻², an open‐circuit voltage of 650 mV, and a fill factor of 77.6%. Copyright © 2011 John Wiley & Sons, Ltd.     

Laser‐fired contact for n‐type crystalline Si solar cells

Laser‐fired contacts to n‐type crystalline silicon were developed by investigating novel metal stacks containing Antimony (Sb). Lasing conditions and the structure of metals stacks were optimized for lowest contact resistance and minimum surface damage. Specific contact resistance for firing different metal stacks through either silicon nitride or p‐type amorphous silicon was determined using two different models and test structures. Specific contact resistance values of 2–7 mΩcm² have been achieved. Recombination loss due to laser damage was consistent with an extracted local surface recombination velocity of ~20 000 cm/s, which is similar to values for laser‐fired base contact for p‐type crystalline silicon. Interdigitated back contact silicon heterojunction cells were fabricated with laser‐fired base contact and proof‐of‐concept efficiencies of 16.9% were achieved. This localized base contact technique will enable low cost back contact patterning and innovative designs for n‐type crystalline solar cell. Copyright © 2014 John Wiley & Sons, Ltd.     

Photoelectrochemical properties of porous silicon based novel photoelectrodes

Porous silicon interfaces have been modified with nitrided TiO₂ (TiON) nanoparticles to develop highly efficient photoelectrodes. Photoelectrodes were prepared by impregnating the electrochemically prepared porous silicon microchannels with titanium oxynitride. Photocatalytic measurements were carried out on titanium oxynitride particles in water‐methanol mixture and the results showed a dependence on the nitrogen concentration. Among the photoelectrodes used for photocurrent measurements, porous silicon impregnated with TiO₂ nitrided at 600 °C showed maximum photocurrent increase after exposure to sunlight‐type radiation. The enhancement in photocurrent was one order more for the porous silicon/titanium oxynitride hetero‐structure than that of polished silicon/titanium oxynitride hetero‐structure. Photoelectrodes thus prepared were found to have stable performance for a period of six months. This observation promises the possibility of using porous silicon/titanium oxynitride hetero‐structures as efficient electrodes for photovoltaic cells. Copyright © 2010 John Wiley & Sons, Ltd.     

Energy yield prediction errors and uncertainties of different photovoltaic models

Mathematical, empirical, and electrical models have long been implemented and used to predict the energy yield of many photovoltaic (PV) technologies. The purpose of this paper is to compare the annual DC energy yield prediction errors of four models namely the single‐point efficiency, single‐point efficiency with temperature correction, the Photovoltaic for Utility‐Scale Applications (PVUSA), and the one‐diode model, against outdoor measurements for different grid‐connected PV systems in Cyprus over a 4‐year evaluation period. The different models showed a wide variation of prediction errors, demonstrating a strong dependence between model performance and the different technologies. In particular, it was clearly shown that the application of temperature loss correction based on the manufacturer's temperature coefficients of power at maximum power point assisted in improving the energy yield prediction significantly especially for the crystalline silicon (c‐Si) technologies. In most cases, the best agreement between the modeled results and outdoor‐measured annual DC energy yield for mono‐crystalline silicon (mono‐c‐Si) and multi‐crystalline silicon (multi‐c‐Si) technologies was obtained using the one‐diode model. The energy yield for the thin‐film technologies was more accurately predicted using the PVUSA model with the exception of the copper‐indium‐gallium‐diselenide (CIGS) technology, which was best predicted using the single‐point efficiency with temperature correction and one‐diode models, thus demonstrating similar physical properties to c‐Si technologies. The paper further quantifies the combined uncertainties associated with the predicted energy yield as a function of the input parameters for the single‐point efficiency, single‐point efficiency with temperature correction, and the PVUSA models. Copyright © 2011 John Wiley & Sons, Ltd.     

Back amorphous‐crystalline silicon heterojunction (BACH) photovoltaic device with facile‐grown oxide ‐ PECVD SiNx passivation

This article reports on the integration of facile native oxide‐based passivation of crystalline silicon surfaces within the back amorphous‐crystalline silicon heterojunction solar cell concept. The new passivation scheme consists of 1‐nm thick native oxide and nominally 70‐nm thick PECVD silicon nitride. The low temperature passivation scheme provides uniform high quality surface passivation and low parasitic optical absorption. The interdigitated doped hydrogenated amorphous silicon layers were deposited on the rear side of the silicon wafer using the direct current saddle field PECVD technique. A systematic analysis of a series of back amorphous‐crystalline silicon heterojunction cells is carried out in order to examine the influence of the various cell parameters (interdigital gap, n‐doped region width, ratio of widths of p, and n‐doped regions) on cell performance. A photovoltaic conversion efficiency of 16.7 % is obtained for an untextured cell illuminated under AM 1.5 global spectrum (cell parameters: V_OC of 641 mV, J_SC of 33.7 mA‐cm ^{− 2} and fill factor of 77.3 %). Copyright © 2014 John Wiley & Sons, Ltd.     

20.1%‐efficient crystalline silicon solar cell with amorphous silicon rear‐surface passivation

We have developed a crystalline silicon solar cell with amorphous silicon (a‐Si:H) rear‐surface passivation based on a simple process. The a‐Si:H layer is deposited at 225°C by plasma‐enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a‐Si:H‐passivated rear. The base contacts are formed by COSIMA (contact formation to a‐Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a‐Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5 ±0.2 mΩ cm² on low‐resistivity (0.5 Ω cm) p‐type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20.1% under one‐sun standard testing conditions for a 4 cm² large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation. Copyright © 2005 John Wiley & Sons, Ltd.     

The energy payback time of advanced crystalline silicon PV modules in 2020: a prospective study

The photovoltaic (PV) market is experiencing vigorous growth, whereas prices are dropping rapidly. This growth has in large part been possible through public support, deserved for its promise to produce electricity at a low cost to the environment. It is therefore important to monitor and minimize environmental impacts associated with PV technologies. In this work, we forecast the environmental performance of crystalline silicon technologies in 2020, the year in which electricity from PV is anticipated to be competitive with wholesale electricity costs all across Europe. Our forecasts are based on technological scenario development and a prospective life cycle assessment with a thorough uncertainty and sensitivity analysis. We estimate that the energy payback time at an in‐plane irradiation of 1700 kWh/(m² year) of crystalline silicon modules can be reduced to below 0.5 years by 2020, which is less than half of the current energy payback time. Copyright © 2013 John Wiley & Sons, Ltd.     

Very low surface recombination velocity of crystalline silicon passivated by phosphorus‐doped a‐SicxNy:H(n) alloys

Hydrogenated and phosphorus‐doped amorphous silicon carbonitride films (a‐SiC_xN_y:H(n)) were deposited by plasma‐enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon‐rich films yielded effective surface recombination velocities at 1 sun‐illumination as low as 3 cm s⁻¹ and 2 cm s⁻¹ on 1 Ω cm p‐ and n‐type crystalline silicon substrates, respectively. In order to use them as anti‐reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high‐temperature steps. Copyright © 2007 John Wiley & Sons, Ltd.     

A Multifunction Heterojunction Formed Between Pentacene and a Single‐Crystal Silicon Nanomembrane

A mesh patterned n‐type single‐crystalline silicon nanomembrane (SiNM) created from a silicon‐on‐insulator (SOI) wafer is complementally combined with a p‐type pentacene layer to form a heterogeneous p‐n junction on a flexible plastic substrate. Excellent rectifying characteristics are obtained from the heterogeneous p‐n diode. The diode also exhibits photosensitivity at visible wavelengths with a photo‐to‐dark current ratio exceeding four orders, a responsivity of 0.7 A/W, and an external quantum efficiency of 21.9% at 633 nm. Over 60% average transmittance in the visible spectrum is measured from the heterogeneous multilayer junction on a plastic substrate. Outstanding mechanical bending characteristics are observed with up to 1.08% of strain applied to the diode. These results suggest that organic‐inorganic heterogeneous integration may be a viable strategy to build flexible organic‐inorganic heterojunction devices and thus enable a number of novel multifunctional applications.     

离子注入和脉冲激光退火制备碲超饱和掺杂单晶硅pn结

Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ¹²⁶Te⁺ to a dose of 2×10¹⁵ ions/cm²,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm²,1-5 pulses,duration 30 ns）,an n⁺ type single crystalline tellurium supersaturated silicon layer with high carrier density(highest concentration 4.10×10¹⁹ cm^-3,three orders of magnitude larger than the solid solution limit) was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best.     

Fundamental boron–oxygen‐related carrier lifetime limit in mono‐ and multicrystalline silicon

Boron‐doped crystalline silicon is the most relevant material in today's solar cell production. Following the trend towards higher efficiencies, silicon substrate materials with high carrier lifetimes are becoming more and more important. In silicon with sufficiently low metal impurity concentrations, the carrier lifetime is ultimately limited by a metastable boron–oxygen‐related defect, which forms under minority‐carrier injection. We have analysed 49 different Czochralski‐grown silicon materials of numerous suppliers with various boron and oxygen concentrations. On the basis of our measured lifetime data, we have derived a universal empirical parameterisation predicting the stable carrier lifetime from the boron and oxygen content in the crystalline silicon material. For multicrystalline silicon it is shown that the predicted carrier lifetime can be regarded as a fundamental upper limit. Copyright © 2005 John Wiley & Sons, Ltd.     

Effect of the interface states on the cell parameters of a thin film quasi-monocrystalline porous silicon as an active layer

Unlike crystalline silicon, quasi-monocrystalline porous silicon (QMPS) layers have a top surface with small voids in the body. What is more pertinent to the present study is the fact that, at a given wavelength of interest for solar cells, these layers are often reported, in the literature, to have a higher absorption coefficient than crystalline silicon. The present study builds on existing literature, suggesting an analytical model that simulates the performance of an elementary thin QMPS (as an active layer) solar cell. Accordingly, the effects that the interface states located at the void-silicon interface and that the porosity of this material have on the cell parameters are investigated. Furthermore, the effects of the optimum base doping, QMPS thickness, and porosity on the photovoltaic parameters were taken into consideration. The results show that the optimum base doping depends on the QMPS thickness and porosity. For an 8 μm thickness, the film QMPS layer gives a 35.4 mA/cm² for short-circuit current density, 15% for conversion efficiency, and 527 mV for open-circuit voltage when the value of the interface states is about 10¹² cm⁻² and the base doping is about 2×10¹⁸ cm⁻³ under AM 1.5 conditions.     

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter‐layer/intrinsic‐layer/crystalline‐Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n‐type microcrystalline silicon (n‐µc‐Si)/intrinsic amorphous silicon (i‐a‐Si)/crystalline silicon (c‐Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on µc‐Si (n)/a‐Si (i)/c‐Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for J_sc = 39·4 mA/cm², V_oc = 0·64 V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n‐layer and the H₂ pretreatment of solar cell, the single‐side HJ solar cells with J_sc = 34·6 mA/cm², V_oc = 0·615 V, FF = 71%, and an efficiency of 15·2% have been achieved. The double‐side HJ solar cell with J_sc = 34·8 mA/cm², V_oc = 0·645 V, FF = 73%, and an efficiency of 16·4% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd.     

Boron‐doped selective silicon epitaxy: high efficiency and process simplification in interdigitated back contact cells

The present research and development activities in crystalline silicon photovoltaics include the exploration of doping technologies alternative to the mainstream diffusion process. The goal is to identify those technologies with potential to increase the solar cell efficiency and reduce the cost per watt peak. In that respect, this work presents the selective epitaxial growth of silicon as a candidate for boron doping; showing the results of the evaluation of boron‐doped silicon epitaxial emitters on slurry and diamond‐coated wire‐sliced Czochralski material, their integration in interdigitated back contact solar cells, and the development of a novel process sequence to create the interdigitated rear junction of these devices using selective epitaxial growth. Boron‐doped silicon epitaxy is demonstrated to perform in the high efficiency range (>22%), and the use of selective epitaxial growth is proposed as a route for the simplification of the interdigitated back contact solar cell flow. Copyright © 2013 John Wiley & Sons, Ltd.     

Bifacial silicon solar cells with 21·3% front efficiency and 19·8% rear efficiency

We introduced a triode structure with p–n junctions on both sides into single‐crystalline bifacial silicon solar cells in order to improve solar cell performance. These fabricated bifacial silicon solar cells have an energy conversion efficiency of 21·3% under front 1 sun illumination (the standard 1 kW/m² AM 1·5 global spectrum at 25°C) and 19·8% under rear 1 sun illumination tested at the Japan Quality Assurance Organization. The total of the front and rear conversion efficiencies is the highest ever reported for bifacial silicon solar cells. Copyright © 2000 John Wiley & Sons, Ltd.     

Accurate Measurement and Characterization of Organic Solar Cells

Methods to accurately measure the current–voltage characteristics of organic solar cells under standard reporting conditions are presented. Four types of organic test cells and two types of silicon reference cells (unfiltered and with a KG5 color filter) are selected to calculate spectral‐mismatch factors for different test‐cell/reference‐cell combinations. The test devices include both polymer/fullerene‐based bulk‐heterojunction solar cells and small‐molecule‐based heterojunction solar cells. The spectral responsivities of test cells are measured as per American Society for Testing and Materials Standard E1021, and their dependence on light‐bias intensity is reported. The current–voltage curves are measured under 100 mW cm^–2 standard AM 1.5 G (AM: air mass) spectrum (International Electrotechnical Commission 69094‐1) generated from a source set with a reference cell and corrected for spectral error.     

Enhanced Photocurrent Spectral Response in Low‐Bandgap Polyfluorene and C70‐Derivative‐Based Solar Cells

Plastic solar cells have been fabricated using a low‐bandgap alternating copolymer of fluorene and a donor–acceptor–donor moiety (APFO‐Green1), blended with 3′‐(3,5‐bis‐trifluoromethylphenyl)‐1′‐(4‐nitrophenyl)pyrazolino[70]fullerene (BTPF70) as electron acceptor. The polymer shows optical absorption in two wavelength ranges, λ < 500 nm and 600 < λ < 1000 nm. The BTPF70 absorbs light at λ < 700 nm. A broad photocurrent spectral response in the wavelength range 300 < λ < 1000 nm is obtained in solar cells. A photocurrent density of 3.4 mA cm^–2, open‐circuit voltage of 0.58 V, and power‐conversion efficiency of 0.7 % are achieved under illumination of AM1.5 (1000 W m^–2) from a solar simulator. Synthesis of BTPF70 is presented. Photoluminescence quenching and electrochemical studies are used to discuss photoinduced charge transfer.     

Performance enhancement of multicrystalline silicon solar cells and modules using double‐layered SiNx:H antireflection coatings

Silicon nitride coating deposited by the plasma‐enhanced chemical vapor deposition method is the most widely used antireflection coating for crystalline silicon solar cells. In this work, we employed double‐layered silicon nitride coating consisting of a top layer with a lower refractive index and a bottom layer (contacting the silicon wafer) with a higher refractive index for multicrystalline silicon solar cells. An optimization procedure was presented for maximizing the photovoltaic performance of the encapsulated solar cells or modules. The dependence of their photovoltaic properties on the thickness of silicon nitride coatings was carefully analyzed. Desirable thicknesses of the individual silicon nitride layers for the double‐layered coatings were calculated. In order to get statistical conclusions, we fabricated a large number of multicrystalline silicon solar cells using the standard production line for both the double‐layered and single‐layered antireflection coating types. On the cell level, the double‐layered silicon nitride antireflection coating resulted in an increase of 0.21%, absolute for the average conversion efficiency, and 1.8 mV and 0.11 mA/cm² for the average open‐circuit voltage and short‐circuit current density, respectively. On the module level, the cell to module power transfer factor was analyzed, and it was demonstrated that the double‐layered silicon nitride antireflection coating provided a consistent enhancement in the photovoltaic performance for multicrystalline silicon solar cell modules than the single‐layered silicon nitride coating. Copyright © 2015 John Wiley & Sons, Ltd.     

Analysis of AlGaAs-GaInAs cascade solar cell under AM 0-AM 5 spectra

It has been shown from first principles, using the integral form of the transport equations, that the efficiency of a two-junction AlGaAs-GaInAs cascade solar cell optimized at 290°K and under AM 0 spectral conditions may exceed 30%. Further studies of this cascade structure have been carried out to determine performance under AM 0-AM 5 spectral conditions and at a concentration ratio of 10³ over the temperature range 290–600°K. In addition, the two-junction AlGaAs-GaInAs cascade cell has been optimized at 290°K and under AM 1.5 spectral conditions. The performance characteristics of the designs optimized under AM 0 and AM 1.5 conditions are compared over the temperature range 290–600°K. The AM 0 optimized structure was used as the initial structure to determine the optimized structure under AM 1.5 spectral conditions. The results of the computer modeling show that the optimized wide bandgap cell parameters under AM 0 and AM 1.5 are somewhat different. However, the optimized narrow bandgap cell parameters are identical for AM 0 and AM 1.5. The theoretical efficiency increases with increasing concentration ratio, approaching 40% at 10³ concentration ratio.