一种共源共栅自偏置带隙基准源设计

在分析带隙基准理论的基础上,针对SoC芯片的1.2V数字电路供电,设计一个低功耗低温度系数、高电源抑制比的带隙基准源。电路由一个与绝对温度成正比(PTAT)电流源和一个绝对温度相补(CTAT)电流源叠加构成,采用低压共源共栅自偏置结构来减少镜像失配和工艺误差对电路的影响。在SMIC0.13μm混合信号CMOS工艺下,电源电压为2.5V时,使用Cadence Spectre对电路进行模拟,结果表明可实现1.2V输出电压,电源抑制比在低频段为-86dB、高频段为-53dB,温度系数为12×10-6/℃、功耗为0.57mW。带隙电压基准源的版图面积为75μm×86μm。     

一种改进的高精度BiCMOS带隙基准源的设计

在对传统带隙基准源的误差进行分析的基础上,介绍了一种改进的带隙核结构,该结构能有效抑制电流失配对带隙基准电压带来的影响。根据该结构设计了一种高精度BiCMOS带隙基准源。HSPICE仿真结果表明,该带隙基准源产生1.22V基准电压,在-25℃～ 125℃温度范围内具有3.1×10-6/℃的温度系数。在25℃时和3.6V标准电源电压条件下,电源抑制比达76dB,静态工作电流为6.9μA,在2.7V～6V的电源电压范围内线性调整率为0.142mV/V。     

带2阶温度补偿的多输出带隙基准电压源

基于传统带隙基准的原理,通过优化电路结构,消除双极晶体管基极．发射极电压中的非线性项,设计了一种带2阶补偿的多输出带隙基准电压源。整个电路采用CSMC0．5μmCMOS工艺模型进行仿真。Spectre仿真结果表明,在-55～125℃的温度范围内,带隙基准电压源的温度系数为3．1ppm／℃,在5V电源电压下,输出基准电压为1．2994V;带隙基准电压源的电源抑制比在低频时为84．5dB;在5v电源电压下,可以同时输出0—5V多个基准电压。     

基于衬底运放的2阶温度补偿带隙基准电路

采用TSMC 0.25μm CMOS工艺,提出了一种基于衬底驱动放大器的高精度带隙基准(BGR)电路。采用衬底驱动技术的放大器,有效地降低了电源电压;通过PTAT2电流产生电路对基准电路进行2阶温度补偿,有效地降低了输出基准电压的温度系数;采用改进型共源共栅输出级电路,很好地改善了电路的电源抑制比(PSRR)。HSPICE仿真结果显示:在2 V供电电压下,输出基准电压为1.261 V,温度系数为8.24×10-6/℃,低频电源抑制比-为91 dB。整体电路功耗为1.37 mW。     

低温漂高PSRR新型带隙基准电压源的研制

利用带隙电压基准的基本原理,结合自偏置共源共栅电流镜以及适当的启动电路,设计了一种新型基准电压源。获得了一个低温度系数、高电源抑制比的电压基准。通过对输出端添加运算放大器,把带隙基准电路产生的1.2 V电压提高到3.5 V,提高了芯片性能。用Cadence软件和CSMC的0.5μm CMOS工艺进行了仿真,结果表明,当温度在-20～+120℃,温度系数为9.3×10-6/℃,直流时的电源抑制比为-82 dB。该基准电压源能够满足开关电源管理芯片的使用要求,并取得了较好的效果。     

高电源抑制比和高阶曲率补偿带隙电压基准源

基于分段线性补偿原理,提出了一种新的带隙基准源高阶曲率补偿方法,使电压基准源的温度特性曲线在整个工作温度范围内具有多个极值,显著提高了电压基准源的精度.采用0.5μm CMOS工艺模型进行仿真.结果表明,在-40℃～135℃的温度范围内,电压基准源的温度系数为5.8×107/℃.设计了具有提高电源抑制比功能的误差放大器,在5V电源电压下,电压基准源的电源抑制比在低频时为-95.4dB,在1kHz时为-92.4dB.     

一个新型CMOS电流模带隙基准源

介绍了一个新型电流模带隙基准源,该带隙基准源的输出基准可以设计为任意大于硅材料的带隙电压（1.25V）的电压,避免在应用中使用运算放大器进行基准电压放大. 同时该结构消除了传统电流模带隙基准源的系统失调. 该带隙基准源已通过UMC 0.18μm混合信号工艺验证. 在1.6V电源电压下,该带隙基准源输出145V的基准电压,同时消耗27μA的电流. 在不采用曲率补偿的情况下,输出基准的温度系数在30℃ 到150℃的温度范围内可以达到23ppm/℃. 在电源电压从1.6变化到3V的情况下,带隙基准源的输入电压调整率为2.1mV/V. 该带隙基准源在低频（10Hz）的电源电压抑制比为40dB. 芯片面积（不包括Pads）为0.088mm2.     

带2阶补偿的CMOS带隙基准电压源

基于CSMC 0.5μm CMOS工艺,设计了一种具有低温度系数、带2阶补偿的带隙基准电压源.在传统放大器反馈结构带隙基准源的基础上,利用MOS器件的“饱和电流与过驱动电压成平方关系”产生2阶补偿量,对传统的带隙基准进行高阶补偿.具有电路实现简单,容易添加到传统带隙基准电路的优点.仿真结果表明,设计的基准电压源在5V电源电压下功耗为860 μW,最低工作电压为1.24 V,在-50℃～125℃的温度范围内获得了1.42×10-5/℃的温度系数,低频时的电源抑制比达到-86.3 dB.     

一个新型CMOS电流模带隙基准源

介绍了一个新型电流模带隙基准源,该带隙基准源的输出基准可以设计为任意大于硅材料的带隙电压(1.25V)的电压,避免在应用中使用运算放大器进行基准电压放大.同时该结构消除了传统电流模带隙基准源的系统失调.该带隙基准源已通过UMC 0.18μm混合信号工艺验证.在1.6V电源电压下,该带隙基准源输出1.45V的基准电压,同时消耗27μA的电流.在不采用曲率补偿的情况下,输出基准的温度系数在30℃到150℃的温度范围内可以达到23ppm/℃.在电源电压从1.6变化到3V的情况下,带隙基准源的输入电压调整率为2.1mV/V.该带隙基准源在低频(10Hz)的电源电压抑制比为40dB.芯片面积(不包括Pads)为0.088mm2.     

一种1V电压工作的高精度CMOS带隙基准源

基于标准1μmCMOS工艺,针对1V供电电压,设计了一种自偏置PTAT电流产生电路和低电源、高增益的运算放大器,最终实现了低电源工作的带隙基准电路.在1V电源电压下,采用1μm CMOS工艺进行仿真,温度系数在-20～120℃范围内达到13×10-6,低频电源抑制比达到-90dB.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks