Capacitive micromachined ultrasonic transducer design for high power transmission

Capacitive micromachined ultrasonic transducers (cMUTs) were developed to meet the demands of the ultrasonic industry. To achieve maximum efficiency, the conventional operation of the cMUT requires a bias voltage close to the collapse voltage. Total acoustic output pressure is limited by the efficiency of the cMUT and the maximum-allowed pulse voltage on the membrane. In this paper, we propose the collapse-snapback operation of the cMUT: the membrane is collapsed onto the substrate in the collapsing cycle, and released in the snapback cycle. The collapse-snapback operation overcomes the above-mentioned limitations of the conventional operation. The collapse-snapback operation utilizes a larger range of membrane deflection profiles (both collapsed and released profiles) and generates higher acoustic output pressures. The static finite element calculations were performed to design cMUTs with specific collapse and snapback voltages by changing the electrode parameters (radius (re), position (de), and thickness (te)). These designs were refined for optimum average displacement per cycle. An electrode radius greater than 60% of the membrane radius significantly improved the displacement per volt. Moderately thick membranes (te approximately 0.2 microm) were preferred, as thicker membranes reduced the displacement per volt. Under proper bias conditions, the collapse-snapback operation, designed for high-power transmission, allowed the application of pulse voltages larger than the difference of collapse and snapback voltages. Dynamic finite element calculations of an infinite cMUT array on the substrate loaded with acoustic fluid medium were performed to determine the dynamic response of the cMUT. Commercially available FEM packages ANSYS and LS-DYNA were used for static and dynamic calculations, respectively. The cMUTs were fabricated for optimal performance in the collapse-snapback operation. The transmit experiments were performed on a 2-D cMUT array using a calibrated hydrophone. Taking into account the attenuation and diffraction losses, the pressure on the cMUT surface was extracted. The cMUT generated 0.47 MPa (6 kPa/V) and 1.04 MPa (11 kPa/V) in the conventional and collapse-snapback operations, respectively. Therefore, collapse-snapback operation of the cMUTs was superior for high-power transmission.     

Dynamic analysis of capacitive micromachined ultrasonic transducers

Electrostatic transducers are usually operated under a DC bias below their collapse voltage. The same scheme has been adopted for capacitive micromachined ultrasonic transducers (cMUTs). DC bias deflects the cMUT membranes toward the substrate, so that their centers are free to move during both receive and transmit operations. In this paper, we present time-domain, finite element calculations for cMUTs using LS-DYNA, a commercially available finite element package. In addition to this DC bias mode, other new cMUT operations (collapse and collapse-snapback) have recently been demonstrated. Because cMUT membranes make contact with the substrate in these new operations, modeling of these cMUTs should include contact analysis. Our model was a cMUT transducer consisting of many hexagonal membranes; because it was symmetrical, we modeled only one-sixth of a hexagonal cell loaded with a fluid medium. The finite element results for both conventional and collapse modes were compared to measurements made by an optical interferometer; a good match was observed. Thus, the model is useful for designing cMUTs that operate in regimes where membranes make contact with the substrate.     

Comparison of conventional and collapsed region operation of capacitive micromachined ultrasonic transducers

We report experimental results from a comparative study on collapsed region and conventional region operation of capacitive micromachined ultrasonic transducers (CMUTs) fabricated with a wafer bonding technique. Using ultrasonic pulse-echo and pitch-catch measurements, we characterized single elements of 1-D CMUT arrays operating in oil. The experimental results from this study agreed with the simulation results: a CMUT operating in the collapsed region produced a higher maximum output pressure than a CMUT operated in the conventional region at 90% of its collapse voltage (3 kPa/V vs. 16.1 kPa/V at 2.3 MHz). While the pulse-echo fractional bandwidth (126%) was higher in the collapsed region operation than in the conventional operation (117%), the pulse-echo amplitude in collapsed region operation was 11 dB higher than in conventional region operation. Furthermore, within the range of tested bias voltages, the output pressure monotonously increased with increased bias during collapsed region operation. It was also found that in the conventional mode, short AC pulses (larger than the collapse voltage) could be applied without collapsing the membranes. Finally, while no significant difference was observed in reflectivity of the CMUT face between the two regions of operation, hysteretic behavior of the devices was identified in the collapsed region operation.     

Experimental characterization of collapse-mode CMUT operation

This paper reports on the experimental characterization of collapse-mode operation of capacitive micromachined ultrasonic transducers (CMUTs). CMUTs are conventionally operated by applying a direct current (DC) bias voltage less than the collapse voltage of the membrane, so that the membrane is deflected toward the bottom electrode. In the conventional regime, there is no contact between the membrane and the substrate; the maximum alternating current (AC) displacement occurs at the center of the membrane. In collapse-mode operation, the DC bias voltage is first increased beyond the collapse voltage, then reduced without releasing the collapsed membrane. In collapse-mode operation, the center of the membrane is always in contact with the substrate. In the case of a circular membrane, the maximum AC displacement occurs along the ring formed between the center and the edge of the membrane. The experimental characterization presented in this paper includes impedance measurements in air, pulse-echo experiments in immersion, and one-way optical displacement measurements in immersion for both conventional and collapse-mode operations. A 205-microm x 205-microm 2-D CMUT array element composed of circular silicon nitride membranes is used in the experiments. In pulse-echo experiments, a custom integrated circuit (IC) comprising a pulse driver, a transmit/receive switch, a wideband low-noise preamplifier, and a line driver is used. By reducing the parasitic capacitance, the use of a custom IC enables pulse-echo measurements at high frequencies with a very small transducer. By comparing frequency response and efficiency of the transducer in conventional and collapse regimes, experimental results show that a collapsed membrane can be used to generate and detect ultrasound more efficiently than a membrane operated in the conventional mode. Furthermore, the center frequency of the collapsed membrane can be changed by varying the applied DC voltage. In this study, the center frequency of a collapsed transducer in immersion is shown to vary from 20 MHz to 28 MHz with applied DC bias; the same transducer operates at 10 MHz in the conventional mode. In conventional mode, the maximum peak-to-peak pressure is 370 kPa on the transducer surface for a 40-ns, 25-V unipolar pulse excitation. In collapse mode, a 25-ns, 25-V unipolar pulse generates 590 kPa pressure at the surface of the transducer.     

Optimization of the gain-bandwidth product of capacitive micromachined ultrasonic transducers

Capacitive micromachined ultrasonic transducers (cMUT) have large bandwidths, but they typically have low conversion efficiencies. This paper defines a performance measure in the form of a gain-bandwidth product and investigates the conditions in which this performance measure is maximized. A Mason model corrected with finite-element simulations is used for the purpose of optimizing parameters. There are different performance measures for transducers operating in transmit, receive, or pulse-echo modes. Basic parameters of the transducer are optimized for those operating modes. Optimized values for a cMUT with silicon nitride membrane and immersed in water are given. The effect of including an electrical matching network is considered. In particular, the effect of a shunt inductor in the gain-bandwidth product is investigated. Design tools are introduced, which are used to determine optimal dimensions of cMUTs with the specified frequency or gain response.     

A finite difference model for cMUT devices

A finite difference method was implemented to simulate capacitive micromachined ultrasonic transducers (cMUTs) and compared to models described in the literature such as finite element methods. Similar results were obtained. It was found that one master curve described the clamped capacitance. We introduced normalized capacitance versus normalized bias voltage and metallization rate, independent of layer thickness, gap height, and size membrane, leading to the determination of a coupling factor master curve. We present here calculations and measurements of electrical impedance for cMUTs. An electromechanical equivalent circuit was used to perform simulations. Our experimental measurements confirmed the theoretical results in terms of resonance, anti-resonance frequencies, clamped capacitance, and electromechanical coupling factor. Due to inhomogeneity of the tested element array and strong parasitic capacitance between cells, the maximum coupling coefficient value achieved was 0.27. Good agreement with theory was obtained for all findings.     

Capacitive micromachined ultrasonic transducers: fabrication technology

Capacitive micromachined ultrasonic transducer (cMUT) technology is a prime candidate for next generation imaging systems. Medical and underwater imaging and the nondestructive evaluation (NDE) societies have expressed growing interest in cMUTs over the years. Capacitive micromachined ultrasonic transducer technology is expected to make a strong impact on imaging technologies, especially volumetric imaging, and to appear in commercial products in the near future. This paper focuses on fabrication technologies for cMUTs and reviews and compares variations in the production processes. We have developed two main approaches to the fabrication of cMUTs: the sacrificial release process and the recently introduced wafer-bonding method. This paper gives a thorough review of the sacrificial release processes, and it describes the new wafer-bonding method in detail. Process variations are compared qualitatively and quantitatively whenever possible. Through these comparisons, it was concluded that wafer-bonded cMUT technology was superior in terms of process control, yield, and uniformity. Because the number of steps and consequent process time were reduced (from six-mask process to four-mask process), turn-around time was improved significantly.     

电容式微加工超声传感器(cMUT)的结构设计及仿真

与传统的压电传感器相比,电容式微加工超声传感器(cMUT)性能优良,有着广泛的应用前景．为此．介绍了cMUT的基本结构和工作原理,并提出了一种新型结构．利用有限元分析软件ANSYS对这种结构进行模态分析．得到其共振频率和一阶振动图;利用ANSYS的耦合场分析模块和参数化设计语言(APDL),对结构进行力电耦合仿真,获得其直流偏压和作为发射器时所需的交流电压值．分析结果表明,所设计的结构符合设计要求．     

Optically addressed microelectromechanical systems driven with high-frequency modulated light

We propose and analyze a new mode of operation for an optically addressed deformable mirror device. The device consists of an array of metallized membrane mirrors supported above an optically addressed photoconductive substrate. A conductive transparent electrode is deposited on the backside of the substrate. A variable polarity voltage is applied between the membrane and the back electrode of the device accompanied with high-frequency modulated light. The membrane is deformed when a modulated light illuminates the backside of the device. This occurs due to impedance and bias redistribution between the two cascaded impedances. This operating mechanism of a microelectromechanical systems device is suitable for detecting moving targets.     

Investigation of parameters controlling the dielectrophoretic assembly of carbon nanotubes on microelectrodes

Networks of single-walled carbon nanotubes were assembled onto microelectrodes by dielectrophoresis. The dependence of the obtained networks on several assembly parameters such as bias voltage, field application time, frequency, electrode geometry and the nanotube solvent were investigated both structurally and electrically. Reproducible differences in morphological and electrical properties were observed for the parameters investigated. Application of a bias voltage above 10 V for more than 30 seconds with nanotubes in an SDS solution, resulted in dense networks with a relatively low resistance in the 10 komega regime. On the other hand, individual nanotubes and bundles were assembled with lower voltages applied for less than 10 seconds and with other nanotubes solutions. The experimental results were combined with theoretical calculations in order to find a geometry and voltage independent threshold field for the successful assembly of nanotubes between electrodes using dielectrophoresis.     

Features of mode locking in laser with quantum well in broad waveguide layer

Passive mode locking (PML) regimes in two-section lasers with quantum wells in broad waveguides operating at λ = 1.06 μm have been studied. The room temperature spectrum of the saturable absorber section retains exciton peak at the absorption edge, which decreases in amplitude shifts toward longer wavelengths by 18 meV when the reverse bias voltage is varied from 0 to 14 V. The PML regime is observed at relatively large voltages (above 9 V) that are necessary to compensate for the effect of band broadening in the gain section by the Stark shift of absorption in the reversely biased section. The PML regime exists, beginning with threshold values of the pumping current, and is characterized by a narrow RF signal with a 20-kHz linewidth. As the reverse bias voltage on the absorber section is increased, a low-frequency amplitude modulation superimposes on the mode-locked laser radiation.     

Directional scholte wave generation and detection using interdigital capacitive micromachined ultrasonic transducers

Directional generation and detection of Scholte waves and other guided modes in liquids and microfluidic channels by capacitive micromachined ultrasonic transducers (cMUTs) is reported. An interdigital transducer structure along with a phased-excitation scheme is used to enhance the directionality of Scholte interface waves in microfluidic environments. Finite element models are developed to predict the performance of the devices in both fluid half-spaces and microchannels. Experiments on the interdigital cMUTs show that a five-finger-pair device in a water half-space has 12 dB of directionality in generating Scholte waves at the design frequency of 10 MHz. A 10-finger device operating at 10 MHz in a water-filled microchannel has 13.4 dB of directionality. These directionality figures agree well with the modeling results. Using the results of the finite element model of a cMUT in a fluid half-space, it was determined that 41% of the acoustic power radiated into the fluid is contained in the Scholte wave propagating in the desired lateral direction. Transducers are demonstrated to perform bidirectional pumping in fluid channels with input power levels in the milliwatt range. Interdigital cMUTs fabricated using low temperature processes can be used as compact ultrasonic transducers with integrated electronics for sensing and actuation in fluidic environments.     

R.F. diode sputtering in permanent-match mode

A constans-voltage r.f. diode sputtering set incorporating a self-excited oscillator was designed. The variable discharge impedance was stabilized, as seen from the r.f. generator output, by suitable capacitive discharge shunting combined with a rather tight coupling to the generator. A conventional r.f. power oscillator of the Colpitt type was used and, as the loading of the oscillator by the discharge and its associated electrical network was essentially constant, there was no need for an impedance matching network or voltage-and/or power-controlling servosystems to assure stable operation of the equipment.For bias sputtering, the variation in the substrate holder voltage was established by variation of the mutual inductance to the bias circuit which allows the bias voltage to be operated in phase or 180° out of phase with respect to the target voltage. The r.f. generator had a line-modulated power supply; its influence on the accelerating voltages governing sputtering was considered and the ion energy distribution was studied. The operation of the equipment is illustrated by refractive index results obtained in TiO₂ films deposited by in-phase and inverse-phase bias sputtering.     

Ab initio calculation of stable structures of a Na atomic chain under bias voltages

The stable geometries of a three-atom Na chain connected to two semi-infinite jellium electrodes are studied under bias voltages by performing ab initio force calculations within the density functional theory. At a low bias voltage of 0.01 V, the stable geometry is found to be symmetric, while it becomes asymmetric for higher bias voltages. The displacements of Na atoms in the chain are proportional to the applied bias voltages up to 1 V, while their behavior changes drastically above 1 V. These results can be understood from the behavior of charges induced by the applied voltage. It is also found that the structural relaxation due to the bias voltage also affects the potential drop along the chain and the current—voltage characteristics of the chain.     

Calculation and measurement of electromechanical coupling coefficient of capacitive micromachined ultrasonic transducers

The electromechanical coupling coefficient is an important figure of merit of ultrasonic transducers. The transducer bandwidth is determined by the electromechanical coupling efficiency. The coupling coefficient is, by definition, the ratio of delivered mechanical energy to the stored total energy in the transducer. In this paper, we present the calculation and measurement of coupling coefficient for capacitive micromachined ultrasonic transducers (CMUTs). The finite element method (FEM) is used for our calculations, and the FEM results are compared with the analytical results obtained with parallel plate approximation. The effect of series and parallel capacitances in the CMUT also is investigated. The FEM calculations of the CMUT indicate that the electromechanical coupling coefficient is independent of any series capacitance that may exist in the structure. The series capacitance, however, alters the collapse voltage of the membrane. The parallel parasitic capacitance that may exist in a CMUT or is external to the transducer reduces the coupling coefficient at a given bias voltage. At the collapse, regardless of the parasitics, the coupling coefficient reaches unity. Our experimental measurements confirm a coupling coefficient of 0.85 before collapse, and measurements are in agreement with theory.     

Ab initio calculation of stable structures of a Na atomic chain under bias voltages

The stable geometries of a three-atom Na chain connected to two semi-infinite jellium electrodes are studied under bias voltages by performing ab initio force calculations within the density functional theory. At a low bias voltage of 0.01 V, the stable geometry is found to be symmetric, while it becomes asymmetric for higher bias voltages. The displacements of Na atoms in the chain are proportional to the applied bias voltages up to 1 V, while their behavior changes drastically above 1 V. These results can be understood from the behavior of charges induced by the applied voltage. It is also found that the structural relaxation due to the bias voltage also affects the potential drop along the chain and the current–voltage characteristics of the chain.     

Low-Voltage Reversible Electroadhesion of Ionoelastomer Junctions

Electroadhesion provides a simple route to rapidly and reversibly control adhesion using applied electric potentials, offering promise for a variety of applications including haptics and robotics. Current electroadhesives, however, suffer from key limitations associated with the use of high operating voltages (>kV) and corresponding failure due to dielectric breakdown. Here, a new type of electroadhesion based on heterojunctions between iono-elastomer of opposite polarity is demonstrated, which can be operated at potentials as low as ≈1 V. The large electric field developed across the molecular-scale ionic double layer (IDL) when the junction is placed under reverse bias allows for strong adhesion at low voltages. In contrast, under forward bias, the electric field across the IDL is destroyed, substantially lowering the adhesion in a reversible fashion. These ionoelastomer electroadhesives are highly efficient with respect to the force capacity per electrostatic capacitive energy and are robust to defects or damage that typically lead to catastrophic failure of conventional dielectric electroadhesives. The findings provide new fundamental insight into low-voltage electroadhesion and broaden its possible applications.     

Flexible Zinc–Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Flexible high‐voltage thin‐film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high‐voltage operation, the HVTFT implements a zinc–tin oxide channel, a thick dielectric stack, and an offset gate. At a source–drain bias of 1 kV, the HVTFT has a 20 µA on‐current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high‐voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal‐oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics.     

Novel many-body transport phenomenon in coupled quantum wires

We demonstrate the presence of a resonant interaction between a pair of coupled quantum wires, which are formed in the ultrahigh mobility two-dimensional electron gas of a GaAs/AlGaAs quantum well. The coupled-wire system is realized by an extension of the split-gate technique, in which bias voltages are applied to Schottky gates on the semiconductor surface, to vary the width of the two quantum wires, as well as the strength of the coupling between them. The key observation of interest here is one in which the gate voltages used to define one of the wires are first fixed, after which the conductance of this wire is measured as the gate voltage used to form the other wire is swept. Over the range of gate voltage where the swept wire pinches off, we observe a resonant peak in the conductance of the fixed wire that is correlated precisely to this pinchoff condition. In this paper, we present new results on the current- and temperature-dependence of this conductance resonance, which we suggest is related to the formation of a local moment in the swept wire as its conductance is reduced below 2e/sup 2//h.     

Photoconductive optically driven deformable membrane under high-frequency bias: fabrication, characterization, and modeling

The fabrication and characterization of an optically addressable deformable mirror for a spatial light modulator are described. Device operation utilizes an electrostatically driven pixelated aluminized polymeric membrane mirror supported above an optically controlled photoconductive GaAs substrate. A 5 mum thick grid of patterned photoresist supports the 2 mum thick aluminized Mylar membrane. A conductive ZnO layer is placed on the backside of the GaAs wafer. Similar devices were also fabricated with InP. A standard Michelson interferometer is used to measure mirror deformation data as a function of illumination, applied voltage, and frequency. The device operates as an impedance distribution between two cascaded impedances of deformable membrane substrate, substrate, and electrode. An analysis of device's operation under several bias conditions, which relates membrane deformation to operating parameters, is presented.