高能重离子辐照制备SiOC复合材料的研究

用120 kev碳离子注入非晶SiO2薄膜,再用高能Xe、Pb和U离子辐照.注碳剂量范围为2.0×1017-8.6×1017 cm-2,高能离子辐照剂量1.0×1010-3.8×1012 cm-2.辐照后的样品用傅里叶变换红外光谱仪进行系统分析.实验结果显示,高能离子辐照在注碳非晶SiO2薄膜中形成了大量的Si-O-C键和Si-C键.这些Si-O-C结构具有环链、开链和笼链等多种结构形式.随电子能损、辐照剂量或者沉积能量密度的增加,SiOC结构由类笼向环/开链结构演化.对高能重离子驱动产生SiOC结构的机理进行了简单的讨论.     

用重离子辐照制备核微孔滤膜

用加速器引出的重离子束制备核微孔滤膜的优点是:能够提供多种单能、均匀、垂直的高能重离子束,因而它已成为制备核微孔滤膜的理想手段。氧是制备聚碳酸酯核微孔滤膜的临界重离子。本实验用1.5米回旋加速器引出的不同能量的氧离子束探索了照射方法、化学蚀刻条件及核微孔滤膜的化学稳定性等,制得了一定规格的核微孔滤膜。     

Pb离子辐照注碳a-SiO2薄膜的光致发光性能

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,进行120 keV C离子注入和950 MeV Pb离子辐照,用荧光光谱分析样品发光特性的改变.结果发现,C离子注入和高能Pb离子辐照均能显著影响样品的发光特性,且荧光光谱的改变强烈依赖于注入和辐照剂量,预示不同注入和辐照剂量将导致不同的发光结构形成.对注入和辐照造成薄膜...     

高能铁离子辐照二氧化硅玻璃产生的缺陷研究

室温下用紫外-可见吸收光谱、荧光光谱和电子顺磁共振技术测量分析1.157 GeV56Fe离子辐照的二氧化硅玻璃,研究了高能重离子辐照产生缺陷的规律.紫外-可见吸收光谱测量结果显示,高能铁离子辐照产生了包括E'心、非桥连氧空穴心(NBOHC)和缺氧心ODC(Ⅱ)在内的多种缺陷结构.随着离子辐照量的增加,各类缺陷的数量逐渐增大并在高辐照量时趋于饱和.用单离子饱和损伤模型对实验结果进行拟合,获得了各类缺陷的产生截面在90-140 nm2.根据缺陷相对数量的变化关系探讨了E心和NBOHC的产生机制.荧光光谱显示,当以5 eV的紫外光激发辐照样品时,观测到三个荧光发射峰,分别位于4.28 eV(α带)、3.2 eV(β带)和2.67 eV(γ带),α带和γ带的存在证实辐照产生了ODC(Ⅱ)缺陷.实验发现β带是二氧化硅玻璃中的一种固有缺陷,高能离子辐照可使其部分脱色.电子顺磁共振测量进一步证实了E'心的产生规律.     

高能铁离子辐照单晶氧化铝产生的色心研究

室温下利用紫外-可见吸收光谱和荧光光谱技术对1.157GeV的56Fe离子注入辐照的单晶三氧化二铝(α-Al2O3)进行了测量分析,研究了辐照产生的阴离子空位的形成和演化规律.测量结果显示,高能Fe离子辐照产生了多种阴离子空位型缺陷,其中包括F、F 、F2 、F22 和F2心.随入射离子剂量的增加,各类缺陷的数量逐渐增大,并在高剂量时趋于饱和,但各类缺陷间的相对数量存在一定的比例,不随剂量的增加而有明显变化.用单离子饱和损伤模型对实验结果进行了拟合,获得各类色心的产生截面在40-90 nm2之间.与TRIM程序计算结果比较后发现,室温下辐照时阴离子单空位的产生速率约是由核能损过程在低温下产生缺陷速率的一半.     

固体气泡损伤探测器探测高能重离子的研究

用高能重离子Ar和C进行的实验表明：（1）高能重离子可以在固体气泡损伤探测器中产生径迹,重离子径迹呈直线形,由一连串微小气泡组成;（2）固体气泡损伤探测器探测重离子具有阈特性,阈的实质近似为临界能量损失率（dE／dX）C,这一阈特性与蚀刻径迹探测器类似。固体气泡损伤探测器的阈值为（dE／dX）c=2220MeV／g·cm2,可用于重离子物理、宇宙射线和宇宙暗物质探测以及癌症治疗模拟等领域。     

DLC薄膜中子辐照效应

采用射频等离子体化学汽相沉积法得到了类金刚石（以下简称DLC）薄膜,并用能量为14MeV的中子对其进行辐照,辐照剂量为1.4×1012n/cm2～7.2×1012n/cm2。通过Raman及红外光谱分析得出,中子辐照造成膜中SP3C-C键的明显减少及SP2C=C键的增加,并形成少见的非晶型SP1C≡C键碳（直线型碳）,使DLC膜进一步非晶化。经辐照后的DLC薄膜红外透过率均有所提高,在实验剂量范围内,基本上与辐照剂量无关。     

C60薄膜在快重离子辐照下的结构稳定性研究

用傅立叶变换红外光谱、X射线衍射谱、X射线光电子谱和拉曼散射技术分析了能量为GeV量级的S、Fe、Xe、和U离子,以及120keV的H离子在室温下辐照多层堆积C60薄膜的结构稳定性,即快重离子在C60薄膜中由高密度电子激发引起的效应,主要包括C60分子的聚合、分子结构的损伤、新的高温-高压相的形成和晶态向非晶态的转变.     

类金刚石碳剥离膜的制备及其性能研究

采用磁过滤阴极真空弧(FCVA)技术制备了质量厚度为5~7μg/cm2的类金刚石碳(DLC)剥离膜。用XP2U型精密电子天平测试分析了100mm范围内的DLC剥离膜均匀性,结果显示其最大不均匀性小于10%。通过扫描电子显微镜(SEM)、原子力显微镜(AFM)、万能摩擦磨损试验机和X光电子谱(XPS)测试分析了DLC剥离膜的表面形貌、耐磨损特性和结构,结果显示采用双90°FCVA技术沉积的DLC剥离膜表面光滑致密、耐磨,几乎没有大颗粒的污染,表征金刚石特性的sp3键含量超过70%。在北京HI-13串列加速器上使用107 Ag-、70 Ge-、48 Ti-、28Si-、197 Au-和127I-六种典型质量的离子束对质量厚度为5~7μg/cm2的DLC剥离膜和碳剥离膜寿命进行测试比较,结果显示DLC剥离膜寿命比碳剥离膜的高2.6~10倍。     

用于微结构气体探测器的类金刚石碳阻性电极制备研究

通过磁控溅射法制备了用于微结构气体探测器（MPGD）的新型类金刚石碳（DLC）阻性电极,研究了靶电流、真空度、元素掺杂等因素对DLC阻性电极面电阻的影响规律,以及DLC阻性电极结合强度和内应力的优化方法。结果表明：随靶电流的增大,DLC阻性电极的面电阻降低;真空度越高,DLC阻性电极的面电阻越小,稳定性越好;氢元素和氮元素的掺杂使得DLC阻性电极的面电阻增大,且氢元素影响更加明显。本文方法为新构型微结构气体探测器的研发和性能提升奠定了技术基础。     

Track creation after swift heavy ion irradiation of insulators

The dynamics of structural modifications of insulators irradiated with swift heavy ions were investigated theoretically applying a combination of Monte-Carlo method (MC), used to describe SHI penetration and following excitation and relaxation of the electronic subsystem, with Two Temperature Model (TTM) describing the heating of the lattice. This MC-TTM combination demonstrates that secondary ionizations play a very important role for the track formation process. They lead to an additional term in the heat diffusion equation related to energy stored in the hole subsystem. This storage of energy causes a significant delay of heating and prolongs the timescales up to tens of picoseconds.     

Effects of O swift heavy ion irradiation on indium oxide thin films

Indium oxide thin films deposited by spray pyrolysis were irradiated by 100 MeV O⁷⁺ ions with different fluences of 5 × 10¹¹, 1 × 10¹² and 1 × 10¹³ ions/cm². X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (2 2 2) orientation observed from the as-deposited films was shifted to (4 0 0) after irradiation. Furthermore, the intensity of the (4 0 0) orientation was decreased with increasing fluence together with an increase in (2 2 2) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from ∼78.9 to 43.0 cm²/V s, following irradiation. Films irradiated with a fluence of 5 × 10¹¹ ions/cm² showed a better combination of electrical properties, with a resistivity of 4.57 × 10⁻³ Ω cm, carrier concentration of 2.2 × 10¹⁹ cm⁻³ and mobility of 61.0 cm²/V s. The average transmittance obtained from the as-deposited films decreased from ∼81% to 72%, when irradiated with a fluence of 5 × 10¹¹ ions/cm². The surface microstructures confirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as “radish-like” morphology when irradiated with a fluence of 5 × 10¹¹ ions/cm².     

Density evolution in formation of swift heavy ion tracks in insulators

Swift heavy ion irradiation leaves a latent ion track around the ion path in many materials. Here we report computational molecular dynamics (MD) simulation results on track formation in several insulating materials, quartz, amorphous silica (a-SiO₂), zinc oxide and diamond, concentrating especially in mass transport leading to density variations in the track volume during the initial stages of track formation. These details are largely unobservable in experiments due to the picosecond timescale and very local nature, and also in many computational models of track formation. Earlier a low-density core - high-density shell fine structure has been observed in latent tracks in amorphous silica, and here we study if other materials than silica show similar behavior. The results highlight the dynamical nature of track formation, that includes competing effects of heat and mass transport, rapid quenching of the heated area and recrystallization.     

Selective disorder in the CuO basal planes of YBa2Cu3O7−y by swift heavy ion induced secondary electrons

In situ temperature dependent resistivity, ρ(T) study on c-axis oriented YBa₂Cu₃O_7−y thin films irradiated with 200 MeV Ag ions at 79 K is shown to induce point defects in addition to amorphous ion tracks. Annealing characteristics of these defects indicate that the point defects are basically oxygen disorder selectively created in the CuO basal planes of YBa₂Cu₃O_7−y structure by secondary electrons emanating from the path of 200 MeV Ag ions. These electrons are shown to create defects by inelastic interaction process. Contrary to the general expectation, we show that the superconducting transition temperature, T_c is suppressed at a rate two orders of magnitude faster at extremely low fluences where ion tracks are far apart from each other than at high fluences where tracks tend to overlap. The transition width on the other hand remains unaffected while resistivity shows a large increase at high fluences. At high fluences, a two-step superconducting transition emerged, which indicate the evolution of two types of superconducting regions with distinctly different T_cs.     

Amorphization kinetics under swift heavy ion irradiation: A cumulative overlapping-track approach

A simple illustrative physical model is presented to describe the kinetics of damage and amorphization by swift heavy ions (SHI) in LiNbO₃. The model considers that every ion impact generates initially a defective region (halo) and a full amorphous core whose relative size depends on the electronic stopping power. Below a given stopping power threshold only a halo is generated. For increasing fluences the amorphized area grows monotonically via overlapping of a fixed number N of halos. In spite of its simplicity the model, which provides analytical solutions, describes many relevant features of the kinetic behaviour. In particular, it predicts approximate Avrami curves with parameters depending on stopping power in qualitative accordance with experiment that turn into Poisson laws well above the threshold value.     

Erosion of carbon fiber composites under high-fluence heavy ion irradiation

The ion-induced erosion, determining by sputtering yield Y and surface evolution including structure and morphology changes of the modified surface layers, of two commercial carbon fiber composites (CFC) with different reinforcement - KUP-VM (1D) and Desna 4 (4D) have been studied under 30 keV Ar⁺ high fluence (φt ∼ 10¹⁸-10²⁰ ion/cm²) irradiation in the temperature range from room temperature to 400 °C. Ion-induced erosion results in the changes of carbon fiber structure which depend on temperature and ion fluence. Monitoring of ion-induced structural changes using the temperature dependence of ion-induced electron emission yield has shown that for Desna 4 and KUP-VM at dynamic annealing temperature Т_а ≈ 170 °С the transition takes place from disordering at T < T_a to recrystallization at T > T_a. The annealing temperature Т_а is close to the one for polycrystalline graphites. Microscopy analysis has shown that at temperatures Т < T_a the etching of the fibers results in a formation of trough-like longitudinal cavities and hillocks. Irradiation at temperatures T > T_a leads to a crimped structure with the ribs perpendicular to fiber axis. After further sputtering of the crimps the fiber morphology is transformed to an isotropic globular structure. As a result the sputtering yield decreases for Desna 4 more than twice. This value is almost equal to that for KUP-VM, Desna 4, polycrystalline graphites and glassy carbons at room temperature.     

不同能区重离子束在小麦育种上的比较研究

介绍了三个不同能区的重离子用于小麦育种的室内实验方法和大田培育情况，并对半致死剂量，细胞学观察和育种情况分别给出了初步结果，最后探讨了三种不同能区的重离子在作物育种上诱变机理。     

Modelling swift heavy ion irradiation in iron

Swift heavy ions moving in metals lose most of their energy to inelastic scattering of electrons. The energy deposited in the electronic system is transferred into the atomic system via electron-ion interactions and can lead to melting and creation of new damage and also annealing of pre-existing atomic defects. Using a combination of molecular dynamics and a consistent treatment of electron energy transfer and transport we have modelled experiments performed in Fe to investigate the annealing effect and damage creation under electronic excitations. We observe both annealing and new damage creation at low and high electronic stopping, respectively. Rapid separation of interstitial atoms and vacant lattice sites is seen due to efficient transport via replacement collision sequences. Our results suggest that the role of electronic excitation can be significant in modeling of the behaviour of metals under swift heavy ion irradiation and attempts to modify metals via ion implantation.