非晶Fe-Zr-B薄膜穆斯堡尔谱学研究

用X射线衍射分析、X射线光电子能谱(XPS)和穆斯堡尔谱学研究了直流磁控溅射法制备的Fe-Zr-B薄膜。X射线衍射分析结果表明制备态的薄膜是非晶的;X射线光电子能谱(XPS)结果表明样品表面氧化较明显,深层部分Fe, Zr, B结合占主导地位;穆斯堡尔谱学结果表明薄膜中Fe原子周围Zr、B原子的存在使Fe原子核内场值有所下降并导致超精细场分布P(H)出现双峰结构,薄膜中存在两种不同的局域微结构。     

离子镀膜法制备铀薄膜的表征

研究了离子镀膜法制备铀薄膜的性质,可为改善薄膜性能、完善过程模型、优化制备参数和提高制备效率提供依据。本工作通过扫描电子显微镜和X射线衍射分别测量了离子镀膜法制备铀薄膜的表面形貌和物相结构,通过俄歇电子能谱和X射线光电子能谱结合Ar+溅射深度剖析,对离子镀膜法制备铀薄膜的元素成分、化学形态及纵深方向的分布进行了分析。分析结果表明:制备的铀薄膜在基体上分布连续,主要物相为CaF2类型面心结构UO2,主要形态为UO2、金属U和FeUO4化合物。     

高氢稀释制备微晶硅薄膜微结构的研究

采用高氢稀硅烷热丝化学气相沉积方法制备氢化微晶硅薄膜。其结构特征用Raman谱，红外透射谱，小角X射线散射等来表征。结果表明微晶硅的大小及在薄膜中的晶态比Xc随氢稀释度的提高而增加。而从红外谱计算得到氢含量则随氢稀释度的增加而减小。小角X射线散射结果表明薄膜致密度随氢稀释度的增加而增加。结合红外谱和小角X射线散射的结果讨论与比较了不同相结构下硅网络中H的增加而增加。结合红外谱和小角X射线散射的结果讨论与比较了不同相结构下硅网络中H的键合状态。认为随着晶化的发生和晶化程度的提高H逐渐移向晶粒表面，在硅薄膜中H的存在形式从以SiH为主向SiH2转变，即在微晶硅膜中主要以SiH2形式存在于晶粒的界面。     

双吡咯烷酮为核的联噻吩衍生物SMDPPEH薄膜热退火过程中微结构变化的实时表征

用旋涂法制备了双吡咯烷酮为核的联噻吩衍生物(Diketopyrrolopyrrole-containing Oligothiophene,SMDPPEH)薄膜,并采用紫外-吸收光谱和掠入射X射线衍射方法研究了热退火过程中的微结构变化。原位热退火的紫外-吸收光谱结果表明,100?C及以上时,第二个和第三个最大吸收峰发生蓝移。掠入射X射线衍射结果表明SMDPPEH薄膜在100?C左右退火时有相变产生,并且随退火温度升高,薄膜的结晶度在增大。相应处理后的SMDPPEH薄膜的紫外-吸收光谱和掠入射X射线衍射证明了SMDPPEH薄膜这个相变保留到了降温后的薄膜中。     

SiGe/Si(100)外延薄膜材料的应变表征研究

如何表征SiGe／Si异质外延薄膜中的应变对提升SiGe器件的性能至关重要。本文详细介绍了卢瑟福背散射／沟道效应(RBS／C)、高分辨率X射线衍射(HRXRD)和拉曼(Raman)谱等技术表征SiGe薄膜中应变的原理。通过这些实验技术,研究了SiGe／Si外延薄膜在氧气和惰性气体氛围下高温退火前后应变弛豫及离子注入Si衬底上外延生长的SiGe薄膜应变状态。     

1.23 GeV Fe离子在C60薄膜中形成潜径迹的Raman谱分析

用能量为1.23GeV的快Fe离子辐照了多层堆叠的C60薄膜。用Raman散射技术分析了快Fe离子在C60薄膜中由强电子激发引起的效应，主要包括辐照引起C60分子的聚合及其高温、高压相（HTHP）的形成，和在高电子能损下C60晶体点阵位置上的C60分子向非晶碳的转变。由此演绎出了快Fe离子在C60薄膜中的损伤截面或潜径迹截面σ和潜径迹的半径心，及其随沉积在电子系统中的能量密度的变化而变化的规律。     

MeV碳离子及碳团簇C2+注入PC膜的光吸收谱研究

研究了MeV碳离子及碳团簇C2 注入的聚碳酸酯(Polycarbonate,PC)膜.光吸收谱研究结果表明,离子注入在聚合物近表面产生了断键及缺陷,改变了PC的光吸收性质,在可见光区域有较明显的吸收,并且吸收边与注入离子的种类、能量和注量密切相关.X射线光电子谱(X-ray photoelectron spectroscopy,XPS)对PC的近表面结构和成分配比进行了分析,证实了以上的结论.     

团簇沉积C-N薄膜的研究

利用荷能团族沉积装置在高阻硅（111）衬底上沉积了碳氮薄膜。通过红外光谱、拉曼谱和X光电子能谱对薄膜的结构和化学组分进行了分析。结果表明,薄膜中存在N－sp^3(β－C3N4的键合方式）,但以N－^2C和C＝C双键的结合方式为主。     

SR-XRD和EXAFS研究Mn掺杂ZnO薄膜的微观结构

用射频磁控溅射技术在蓝宝石衬底上制备了一组不同衬底温度的Mn掺杂ZnO薄膜。质子激发X射线荧光(PIXE)测量表明,薄膜中仅有含量为5 at.%的Mn,未见其它磁性杂质元素(如Fe、Co、Ni等)。同步辐射X射线衍射(SR-XRD)表明,这些Mn掺杂ZnO薄膜具有纤锌矿ZnO结构。SR-XRD和扩展X射线吸收精细结构谱(EXAFS)分析显示,薄膜中未发现Mn团簇或MnO、MnO2、Mn2O3、Mn3O4等二次相,Mn原子是通过替代Zn原子而进入了ZnO晶格。     

基于ISO 4037-1：2019对60~250 kV窄谱系列X射线参考辐射质的研建

以ISO 4037 1：2019为依托,使用大体积自由空气电离室作为测量器具,采用半值层法建立60~250 kV窄谱系列X射线参考辐射质,实验得出的各辐射质的第1半值层和第2半值层的值均在标准规定的误差范围内。使用高纯锗谱仪对建立的X射线参考辐射质进行测量,得到不同辐射质下的脉冲幅度谱。数据处理和分析结果表明,建立的60~250 kV窄谱系列X射线参考辐射质的谱分辨率、平均光子能量和有效能量与ISO 4037 1：2019的推荐值有较好的一致性。本次实验建立的60~250 kV窄谱系列X射线参考辐射质满足ISO 4037 1：2019要求。     

Studies on the high electronic energy deposition in polyaniline thin films

We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au⁷⁺ ion of 100 MeV energy at different fluences, namely, 5 × 10¹¹ ions/cm² and 5 × 10¹² ions/cm², respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique.     

Ion irradiation effects on the optical properties of tungsten oxide films

The optical changes in amorphous WO₃ film prepared by reactive RF sputtering and irradiated by 200-800 keV oxygen ions were measured to study the relationship between coloration and energy deposition. The color centers were effectively created by ion irradiation with contributions from nuclear collisions and electronic energy loss. The increase in the absorption coefficient was reasonably explained by a first order reaction, whose production rate depended roughly on the total deposited energy. During heat treatment in air atmosphere, transmittance recovery started at 400 K and completed at 550 K. No significant difference was found among films irradiated by different incident energies; therefore indicating that the ion-induced damage structure is not strongly influenced by the type of energy loss.     

Velocity effect of swift heavy ions in graphite studied by Raman spectroscopy

Highly oriented pyrolytic graphite (HOPG) samples were irradiated with swift heavy ions (Ar, Kr, Bi, U) of fluences between 10¹¹ and 10¹³ ions/cm² in energy range MeV-GeV. The irradiated samples were analyzed by Raman spectroscopy with laser wavelength of 532.2 nm. It is shown that the ratio between the integrated intensities of the disorder-induced D and the original G Raman bands which denotes the degree of the damage induced by ion irradiation increases as a function of ion fluence as well as the electronic energy loss. This agrees with the previous reports. However, quantitative analysis of the peak intensity at a fixed fluence discloses that ion velocity is also a significant parameter in determination of damage. The conclusion is that the extent of discontinuity of ion track may change with ion velocity besides the electronic energy loss. Considering the radial distribution of the energy deposited on the matter being velocity dependent, the energy density which combines the influence of the electronic energy loss and ion velocity may be more suitable for explaining the effect induced by swift heavy ions.     

Microstructure of copper following high dose 14-MeV Cu ion irradiation

High-purity copper has been irradiated with 14-MeV Cu ions to peak doses of 40 dpa over the temperature range of 100–500°C. Examination of the foils in a transmission electron microscope revealed that no significant amount of void formation had occurred, in conflict with previous irradiation studies. Instead, a high density of stacking fault tetrahedra (SFT) were observed. The defect cluster density is constant for irradiation temperatures ⩽ 200°C, and the density decreases rapidly with irradiation temperature ⩾ 300°C. It is postulated that the absence of voids is due to the low oxygen content of the copper foils (< 5 wt. ppm). The depth dependence of the ion damage was studied by using the cross-section technique. Evidence of displacement damage in the form of “black spot” clusters (SFT and small dislocation loops) was observed at depths well beyond that expected from ion damage range calculations. The discrepancy between the observed and calculated damage profile is most likely due to the use of too large of an electronic stopping power value in the calculation, but diffusional spreading effects may also be playing a role.     

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by 90 MeV Ni, 100 MeV Xe and 200 MeV Xe ions. The AZO films with c-axis orientation on SiO₂-glass substrate were prepared by using a RF-sputter-deposition method at 400 °C. We find that the conductivity increases by two order of magnitude under high-energy-heavy ion irradiation, as has already been observed for 100 keV Ne ion irradiation. We also find that the efficiency of the conductivity enhancement, which is defined as the conductivity increment per a unit of ion fluence, scales super-linearly with the electronic stopping power (S_e). The carrier density and mobility for unirradiated and irradiated AZO films are presented.     

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe⁺ and Mo⁺ ions of 110 keV), swift heavy ions (²⁰⁸Pb²⁷⁺ ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xeⁿ⁺ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm³), which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.     

C276合金质子辐照损伤模拟及活化分析

C276合金是先进核电站燃料元件包壳的候选材料之一。本工作采用TRIM程序分别计算10和20MeV质子辐照C276所产生的辐照损伤,比较分析能损、离位原子、DPA等参数分布。同时使用FISPACT-2007程序进行活化计算,对放射性活度、衰变余热及接触剂量率等参数进行了详细分析。结果表明：辐照损伤主要来自电子能损的贡献,高能质子与靶原子发生碰撞的几率较低。C276经同种能量质子辐照后,活化特性随着辐照时间的增长而增加。辐照时间相同时,高能质子会对材料产生更大的影响。本工作为后续的辐照损伤分子动力学模拟及计划开展的质子辐照实验提供支持。     

Effects of 160 MeV Ni ion irradiation on polypyrrole conducting polymer electrode materials for all polymer redox supercapacitor

Electronically conducting polymers are suitable electrode materials for high performance supercapacitors, for their high specific capacitance and high dc conductivity in the charged state. Supercapacitors and batteries are energy storage and conversion systems which satisfies the requirements of high specific power and energy in a complementary way. Ion beam {energy > 1 MeV} irradiation on the polymer is a novel technique to enhance or alter the properties like conductivity, density, chain length and solubility.

Conducting polymer polypyrrole thin films doped with LiClO₄ are synthesized electrochemically on ITO coated glass substrate and are irradiated with 160 MeV Ni¹²⁺ ions at different fluence 5 × 10¹⁰, 5 × 10¹¹ and 3 × 10¹² ions cm⁻². Dc conductivity measurement of the irradiated films showed 50–60% increase in conductivity which is may be due to increase of carrier concentration in the polymer film as observed in UV–Vis spectroscopy and other effects like cross-linking of polymer chain, bond breaking and creation of defects sites. X-ray diffractogram study shows that the degree of crystallinity of polypyrrole increases in SHI irradiation and is proportionate to ion fluence. The capacitance of the irradiated films is lowered but the capacitance of the supercapacitors with irradiated films showed enhanced stability compared to the devices with unirradiated films while characterized for cycle life up to 10,000 cycles.     

Effects of energetic heavy ion irradiation on the structure and magnetic properties of FeRh thin films

Fe-54at.%Rh thin films were irradiated with 10 MeV iodine ions at room temperature. Before and after the irradiations, the changes in magnetic properties and the lattice structure of the samples were studied by means of a SQUID magnetometer and X-ray diffraction. For the low fluence irradiation, the SQUID measurement at 20 K shows that the anti-ferromagnetic region of the thin film is changed into ferromagnetic region by the irradiation. As the film thickness is much smaller than the ion range, we can discuss the relationship between the density of energy deposited by ions and the change in magnetization quantitatively. For the high fluence irradiation, the magnetization of the film is strongly decreased by the irradiation, which can be explained as due to the change in lattice structure from B2 into A1 structure by the irradiation.     

ORIGIN FOR IRRADIATION EFFECT OF 0．56GeV C^6＋ ON CaVSn：YIG

This paper presents numerous physical characteristics of Ca,V.Sn doped yttrium iron garnet(CaVSn:YIG) irradiated with 0.56GeV carbon ions delivered by the Heavy Ion Research Facility of Lanzhou (HIRFL).The reason for change of the magnetic properties of the samples induced by energetic carbon ions bombardment is discussed.By comparison of this results with the irradiation effects of YIG induced by eneregetic argon,krypton and xenon oibtained on the GANIL,Caen,France,it is concluded that the irradiation effect of 0.56GeV C^6 on CaVSn:YIG arises from the electronic energy losses.