共查询到19条相似文献,搜索用时 93 毫秒
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一、非CMOS纳米计算机中的纳米材料MOSFET技术的发展正在不断孕育出崭新的设计结构与器件工艺,促使CMOS技术不断向纳米尺度拓展。这些浮现出的纳米工艺会推动MOSFET结构向22纳米晶体管工艺(9纳米门器件物理长度)渗透,据乐观估计会在2016年前实现。这些新的器件无疑会依靠大量的 相似文献
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分析了具有源级退化电感的CMOS共源共栅结构电路在低频、低功耗LNA设计中存在的缺陷,为满足低频、低功耗设计的要求,现广泛采用在该电路结构基础上再并联栅极电容的结构.今按照噪声系数的定义严格推导了该结构电路的噪声参数表达式,并基于推导的公式分析了该结构在CMOS低频、低功耗LNA设计中的重要应用.最后实现了一个基于0.18μm CMOS工艺的ISM频段应用的433 MHz LNA的设计,运用Agilent公司的设计仿真软件ADS进行仿真,整个LNA的设计过程及ADS仿真结果与理论分析一致. 相似文献
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采用CMOS标准工艺,同时采用三种典型MEMS后处理关键工艺,重点通过对牺牲层释放工艺进行研究,制作实现了一种新型CMOS兼容的电容式气压传感器.在该传感器结构中,作为牺牲层的是在CMOS工艺中形成的掺硼氧化硅.通过释放使电容上电极悬空从而感应气压变化.释放过程采用氢氟酸HF、氯化铵、甘油和水的混合溶液.由于释放孔大小和释放孔间距的设计十分关键,通过实验验证优化了4μm×4μm的释放孔更适用于此传感器结构,并对此结构进行了性能分析与实验测试.结果表明,该气压传感器结构合理,工艺成功,重点解决了MEMS后处理中的牺牲层释放工艺与CMOS标准工艺的兼容问题,为利用CMOS标准工艺进行MEMS传感器的研制做出了有益的尝试. 相似文献
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采用曙红与叶绿素铜三钠对TiO2纳米颗粒进行了光敏化,研究了TiO2纳米颗粒在节能灯光源下的光催化活性。通过XRD、TEM和UV-Vis等手段对TiO2纳米颗粒的物相、粒径、形貌及光学性能进行了表征分析。结果表明:光敏化可以保持TiO2原来的锐钛矿相,对其形貌亦影响甚少;光敏化后的TiO2纳米颗粒在可见光区吸光程度有较大提高,两种光敏剂以协同作用使光谱响应波长向可见光方向移动,拓展了TiO2光谱响应范围。光催化降解实验表明:光敏剂共敏化TiO2纳米颗粒有很好的光催化性能,且敏化温度30℃,敏化时间8h,曙红质量浓度30mg/L及叶绿素铜三钠质量浓度20mg/L时,光敏化的TiO2纳米颗粒光催化效果最好,节能灯光源下对甲基橙的降解率为61.33%。 相似文献
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Haque MS Teo KB Rupensinghe NL Ali SZ Haneef I Maeng S Park J Udrea F Milne WI 《Nanotechnology》2008,19(2):025607
The direct deposition of carbon nanotubes on CMOS microhotplates is demonstrated in this paper. Tungsten microhotplates, fabricated on thin SOI membranes aside CMOS control circuitry, are used to locally grow carbon nanotubes by chemical vapour deposition. Unlike bulk heating of the entire chip, which could cause degradation to CMOS devices and interconnects due to high growth temperatures in excess of 500?°C, this novel technique allows carbon nanotubes to be grown on-chip in localized regions. The microfabricated heaters are thermally isolated from the rest of the CMOS chip as they are on the membranes. This allows carbon nanotubes to be grown alongside CMOS circuitry on the same wafer without any external heating, thus enabling new applications (e.g.?smart gas sensing) where the integration of CMOS and carbon nanotubes is required. 相似文献
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一种自动体偏置多阈值电压高温 SOI CMOS电路 总被引:1,自引:0,他引:1
提出了一种高温OICMOS电路设计方法--自动体偏置多阈值电压SOICMOS(简称ABB-MT-SOICMOS:Auto-Bulk-BiasedMulti-ThresholdSOICMOS)电路。文中主要讨论了ABB-MT-SOICMOS电路的结构与工作原理,设计与布局等,给出了内部电路电压和电流的模拟结果,并简述了该电路的应用前景。 相似文献
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Liang-Wei Lai Cheng-Hsiao Lai Ya-Chin King 《IEEE sensors journal》2004,4(1):122-126
A novel logarithmic response CMOS image sensor fabricated by 0.25-/spl mu/m CMOS logic process is proposed. The new cell has an output voltage swing of 1 V in the targeted illumination range, which makes it less susceptible to noises in the readout system. Furthermore, the proposed new cell with in-pixel CDS control drastically reduces the fixed pattern noise in logarithmic mode CMOS APS. Comparing with a conventional pixel, a reduction of 10 times in fixed-pattern noise is demonstrated in the new logarithmic response CMOS image sensor. 相似文献
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Ion-sensitive field-effect transistors in standard CMOS fabricated by post processing 总被引:3,自引:0,他引:3
Highly integrated ion-sensitive field-effect transistor (ISFET) microsystems require the monolithic implementation of ISFETs, CMOS electronics, and additional sensors on the same chip. This paper presents new ISFETs in standard CMOS, fabricated by post-processing of a standard CMOS VLSI chip. Unlike CMOS compatible ISFETs fabricated in a dedicated process, the new sensors are directly combined with state-of-the-art CMOS electronics and are subject to continuous technology upgrading. The ISFETs presented include an intermediate gate formed by one or more conducting layers placed between the gate oxide and the sensing layer. The combination of the highly isolating gate oxide of the MOS with a leaky or conducting sensing layer allows the use of low temperature materials that do not damage the CMOS chip. The operation of ISFETs with an intermediate gate and sensing layers fabricated at low temperature is modeled. ISFETs with a linear pH response and drift as low as 0.3 mV/h are reported. 相似文献
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In this paper, a new SPICE macromodel and CMOS emulator for memristors are proposed and verified to fit to the memristor's model equation very well in the entire range of memristor's resistance from the RESET state to the SET state. Compared with the memristor's model equation, average percentage errors in the new SPICE macromodel and in the 4-bit CMOS emulator are less than 0.5% and 0.9%, respectively. In addition, the CMOS emulator for memristors which can be implemented by a CMOS circuit will be very useful to design and verify various peripheral circuits for memristor applications particularly when the memristor fabrication process is not ready. 相似文献
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Jacomino M. Rainard J.-L. David R. 《IEEE transactions on instrumentation and measurement》1989,38(3):773-778
Some testing problems in CMOS circuits are presented, including stuck-open and stuck-on faults, bridging faults, and excessive leakage in dynamic CMOS circuits. It is shown that the current consumption of a faulty CMOS circuit is several orders of magnitude greater than that of the fault-free circuit: hence, consumption measurement may be a suitable way of testing. Test by consumption measurement provides improved controllability and observability of some faults in comparison with the logic test 相似文献
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CMOS APS图像传感器的像质分析 总被引:3,自引:1,他引:2
使用标准CMOS制作工艺生产的有源像素传感器(APS)引起了广泛关注。为了确定CMOS APS成像系统设计的主要参数选择的正确性,以及能否满足要求或指标,需要对相机系统的像质进行分析。考虑到CMOS APS图像传感器与CCD的不同,在分析时计算了CMOS APS成像系统中的镜头、滤光片和焦平面的调制传递函数(MTF),系统MTF曲线为各个部分MTF值之积。在系统截止频率范围内,利用MTF曲线所围面积的大小来评价系统的成像质量。在系统制造之前,用调制传递函数作为像质的评价方法,看其是否符合使用要求,是十分有价值的工作。 相似文献