共查询到20条相似文献,搜索用时 125 毫秒
1.
2.
基于0.18 μm CMOS工艺,设计了一种16位600 MS/s电流舵D/A转换器。该D/A转换器为1.8 V/3.3 V双电源供电,采用并行输入、差分电流输出的四分段(5+4+3+4)电流舵结构。采用灵敏放大器型锁存器可以精确锁存数据,避免出现误码;由恒定负载产生电路和互补交叉点调整电路组成的同步与开关驱动电路,降低了负载效应引起的谐波失真,同时减小了输出毛刺;低失真电流开关消除了差分开关对共源节点处寄生电容对D/A转换器动态性能的影响。Spectre仿真验证结果表明,当采样频率为625 MHz,输入信号频率为240 MHz时,该D/A转换器的SFDR为78.5 dBc。 相似文献
3.
提出了一种基于电流模式的算法型A/D转换器电路结构,分析说明了其基本原理和具体实现方法;构造了一个6位50 MSPS算法型A/D转换器,给出了在OrCAD/PSpice 10.5下的仿真结果,得出用电流模式电路设计高速A/D转换器有优势的结论. 相似文献
4.
在现有流水线A/D转换器设计的基础上,应用电荷泵改进了MOS模拟开关的性能,运用宽带运算放大器提高了电路速度,引入底极板采样和数字校正技术来提高精度,采用动态比较器实现较低的功耗.设计实现了一个10-bit 10Ms/S流水线A/D转换器,并以TSMC 0.35 CMOS工艺的Bsim 3v3模型用HSPICE对电路的性能进行仿真验证,结果表明其各项性能均达到预期的设计要求. 相似文献
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
Wong A. Kong-Pang Pun Yuan-Ting Zhang Hung K. 《IEEE transactions on circuits and systems. I, Regular papers》2005,52(12):2642-2647
A near-infrared heart-rate measurement IC that processes the photoplethysmographic signal was designed using a 0.35-/spl mu/m CMOS technology. The IC consists of a current-to-voltage (I-V) converter, a buffer, a sample-and-hold circuit, a second-order continuous-time low-pass filter (CT-LPF), a comparator, and a timing circuit that is used to pulse the external light-emitting diode with a very low duty cycle to reduce its power consumption. The current steering technique is employed in the design of the CT-LPF to meet the requirement for very low cutoff frequency. The circuit operates from a 3-V lithium battery, occupies a core area of 0.46 mm/sup 2/ and has a power consumption of 4.5 mW. The measurement results corroborate with simulation results and show that the CT-LPF can achieve a cutoff frequency of as low as 0.25 Hz. This demonstrates the feasibility of current steering technique in the design of filter for low-frequency application. 相似文献
16.
This paper will discuss a number of circuit approaches which lower the power consumed by a current steering digital-to-analog converter while maintaining both DC and AC performance levels. An example design provides 14-bit resolution and 200 MSPS conversion rate in a one-poly four-metal (1P4M) 0.18-mum CMOS process. The inclusion of optional 3.3-V compatible devices allows operation over a supply range from 1.7 to 3.6 V. A power dissipation/conversion rate figure of merit of as low as 0.17 mW/MSPS was achieved for 1.8-V operation and as low as 0.28 mW/MSPS at 3.3 V. A measured single-tone SFDR of 70 dB is achieved at a 50-MHz output frequency, with a two-tone IMD of -75 dBc at 71 MHz output. 相似文献
17.
本文将一种基于巨磁致电阻(Giant Magneto Resistive--GMR)的电流检测技术应用于同步整流技术中.该技术可以克服传统电流驱动同步整流器中电流检测器件损耗较大、不能测直流、漏感大、不能工作于高频等缺点.本文内容包括GMR电流检测技术原理和性能分析,GMR电流检测电流驱动同步整流正激变换器的实验研究.研究结果表明,该变换器工作性能理想,在轻载情况下效率有较大幅度的提高,说明GMR是一种可以实际应用的电流检测技术. 相似文献
18.
A fixed-frequency modified series-resonant converter: analysis,design, and experimental results 总被引:3,自引:0,他引:3
It is shown that a fixed-frequency modified (LCL-type) series-resonant converter operates in five different modes with variations in the load current and the supply voltage. The converter is analyzed using the state-space approach for these operating modes. Both the general solutions and the steady-state solutions are obtained. Based on the analysis, design curves are obtained and a simple design procedure is illustrated using a design example. Detailed experimental results obtained from a MOSFET-based 500 W converter are presented to verify the analysis. It is shown that using a proper design, the converter operates only in modes 2 and 3, ensuring a lagging power factor mode of operation for very wide variations in the load and supply voltage 相似文献
19.
Junho Moon Minkyu Song Seungchul Shin Kyungho Moon Byungha Park 《Analog Integrated Circuits and Signal Processing》2010,63(3):407-414
A compact and low power 12-bit 300 MS/s current steering CMOS D/A converter is presented. The architecture of the D/A converter
is based on the current steering 6 + 6 segmented type with a laminated current cell relocation technique. In order to improve
the linearity and glitch noise, a high output impedance analog current cell is designed. Furthermore, for the purpose of reducing
the chip area and power dissipation, a noble merged switching logic and a compact layout technique are proposed. To verify
its performance, the chip was fabricated with 0.13 μm thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective
chip area is 0.26 mm2 (510 × 510 μm) with a power consumption of 100 mW. The measured INL and DNL are within ±3LSB and ±1LSB, respectively. The
measured SFDR is about 70 dB, when the input frequency is 1 MHz at a clock frequency of 300 MHz. 相似文献
20.
Matsui M. Momose H. Urakawa Y. Maeda T. Suzuki A. Urakawa N. Sato K. Matsunaga J. Ochii K. 《Solid-State Circuits, IEEE Journal of》1989,24(5):1226-1232
The design and performance of a high-speed 1 M*1-bit SRAM with ECL I/O are described. The 6.5*16.5-mm/sup 2/ chip was fabricated with a 0.8- mu m BiCMOS process technology. A modified double-word-line (MDWL) structure and a bit-line peripheral circuitry with normally-on bit-line equalization circuit are used to achieve high-speed read operation. The read speed is further enhanced by a novel ECL-to-CMOS-level converter with a double-latch configuration. The converter dissipates no DC current and contributes to low power consumption together with an automatic power-saving function, utilizing the address transition detection (ATD) technique. The access time is typically 8 ns, and the active power is 500 mW at 50 MHz.<> 相似文献