正照射与背照射InGaAs探测器的性能对比研究

首先介绍了InGaAs台面探测器的研究进展，然后为了验证利用台面结制作背照射器件的可行性，利用分子束外延（MBE）方法生长的掺杂InGaAs吸收层PIN InP／InGaAs／InP双异质结外延材料，通过台面制作、钝化、电极生长、背面抛光等工艺，制备了8元台面InGaAs探测器，并测试了正照射和背照射时，器件的Ⅰ-Ⅴ、信号和响应光谱。测试结果表明，正照射和背照射情况下，器件的响应信号差别不大，正照射下器件的平均峰值探测率为4．1×10^11cm·Hz^1/2·W^-1，背照射下器件的平均峰值探测率为4．0×10^11cm·Hz^1/2·W^-1，但背照射情况下器件的响应光谱在短波方向有更好的截止。     

正照射与背照射InGaAs探测器的性能对比研究

首先介绍了InGaAs台面探测器的研究进展，然后为了验证利用台面结制作背照射器件的可行性，利用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP／InGaAs／InP双异质结外延材料，通过台面制作、钝化、电极生长、背面抛光等工艺，制备了8元台面InGaAs探测器，并测试了正照射和背照射时，器件的I-V、信号和响应光谱。测试结果表明，正照射和背照射情况下，器件的响应信号差别不大，正照射下器件的平均峰值探测率为4．1×1011cm·Hz1/2·W-1，背照射下器件的平均峰值探测率为4．0×1011cm·Hz1/2·W-1，但背照射情况下器件的响应光谱在短波方向有更好的截止。     

正照射与背照射InGaAs探测器的性能对比研究

首先介绍了InGaAs台面探测器的研究进展,然后为了验证利用台面结制作背照射器件的可行性,利用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过台面制作、钝化、电极生长、背面抛光等工艺,制备了8元台面InGaAs探测器,并测试了正照射和背照射时,器件的Ⅰ-Ⅴ、信号和响应光谱.测试结果表明,正照射和背照射情况下,器件的响应信号差别不大,正照射下器件的平均峰值探测率为4.1×1011 cm·Hz1/2·W-1,背照射下器件的平均峰值探测率为4.0×1011 cm·Hz1/2·W-1,但背照射情况下器件的响应光谱在短波方向有更好的截止.     

InGaAs台面探测器的AIN钝化研究

首次介绍了采用AlN介质薄膜为钝化层的InGaAs台面型探测器(λ=2.4 μm).探测器采用分子束外延(MBE)方法生长的原位掺杂的PIN In0.78Ga0.22As/In0.78Ga0.22As/InxGa1-xAs/InP 外延材料.由于台面型器件的裸露面积较大,特另q是台面的成形工艺所带来的侧面损伤,加大了光生载流子的表面复合,使器件的暗电流、噪声等性能急剧下降.采用新的AlN钝化工艺,制备了8元正照射台面InGaAs探测器,室温下(T=300 K)电压为-0.5 V时.探测器的暗电流(ID)约为9×10-8 A,优值因子(R0A)大于30 Ωcm2,通过与其他钝化工艺所制备的器件的性能进行分析对比得出:AlN能有效地改善器件的表面状态,减小表面复合,从而降低了暗电流,提高了探测器的性能.     

两种钝化结构InGaAs红外探测器低频噪声的研究

低频噪声的测量和分析已成为红外探测器性能和可靠性评估的一种重要手段.制备了聚酰亚胺单层钝化和硫化后ZnS/聚酰亚胺双层钝化两种结构InGaAs探测器,测试了不同偏压或不同温度下器件的低频噪声谱,讨论了偏压和温度对InGaAs探测器低频噪声的影响.随着偏压的增加,噪声增大,拐点向低频方向移动,并且低频噪声随温度降低而减小.认为硫化后ZnS/聚酰亚胺双层钝化器件相对聚酰亚胺单层钝化器件相同偏压或温度下噪声较小,拐点低.因为硫化处理和ZnS层增强了钝化效果,器件的表面漏电流明显减小,因而大大降低了器件的低频噪声.     

短波红外InGaAs焦平面探测器研究进展

短波红外InGaAs焦平面探测器具有探测率高、均匀性好等优点,在航天遥感、微光夜视、医疗诊断等领域具有广泛应用。近十年来,中国科学院上海技术物理研究所围绕高灵敏度常规波长（0.9～1.7 μm） InGaAs焦平面、延伸波长（1.0～2.5 μm） InGaAs焦平面以及新型多功能InGaAs探测器取得了良好进展。在常规波长InGaAs焦平面方面,从256×1、512×1元等线列向320×256、640×512、4 000×128、1 280×1 024元等多种规格面阵方面发展,室温暗电流密度优于5 nA/cm2,室温峰值探测率优于5×1012 cm·Hz1/2/W。在延伸波长InGaAs探测器方面,发展了高光谱高帧频1 024×256、1 024×512元焦平面,暗电流密度优于10 nA/cm2和峰值探测率优于5×1011 cm·Hz1/2/W@200 K。在新型多功能InGaAs探测器方面,发展了一种可见近红外响应的InGaAs探测器,通过具有阻挡层结构的新型外延材料和片上集成微纳陷光结构,实现0.4～1.7 μm宽谱段响应,研制的320×256、640×512焦平面组件的量子效率达到40%@0.5 m、80%@0.8 m、90%@1.55 m;发展了片上集成亚波长金属光栅的InGaAs偏振探测器,其在0 °、45 °、90 °、135 °的消光比优于20:1。     

128×1线列InGaAs短波红外焦平面的研究

报道了用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过干法刻蚀和湿法腐蚀相结合制作台面、硫化和聚酰亚胺钝化、电极生长等工艺,制备了128×1台面正照射InGaAs探测器阵列.测试了器件的变温I-V、响应光谱和探测率,在278K时平均峰值探测率为1.03×1012cmHz1/2W-1.实现了128元InGaAs探测器阵列与CTIA结构L128读出电路相互连,经封装后,在室温(291K)时成功测出128元响应信号.焦平面响应的不均匀性为18.3%,并对不均匀性产生的原因进行了分析.     

InGaAs短波红外探测器

与InP衬底晶格常数相匹配的In0.53Ga0.47As材料能够制作出高质量的光电探测器,可工作在室温或热电制冷条件下,光响应谱范围为0.92～1.7μm,具有高达80%以上的量子效率.通过对InGaAs探测器芯片平面和平台式结构的分析,以及InGaAs芯片和HgCdTe芯片的性能测试、比较,充分证明了InGaAs材料芯片的优越性及研制在室温下工作的高性能InGaAs探测器的可行性.对InGaAs芯片相对光谱特性的测试表明,InGaAs材料温度响应重复性较好.     

延伸波长InGaAs探测器封装用二级热电制冷器性能研究

真空封装技术是延伸波长InGaAs探测器的主要封装方法之一,热电制冷器可为延伸波长InGaAs探测器焦平面提供低温环境。测试了基于真空封装技术无热负载条件下二级热电制冷器的性能,研究了二级热电制冷器在不同输入电流(功率)时冷、热端温差与热负载的关系,测试了二级热电制冷器在低温工况下的制冷性能以及二级热电制冷器处于不工作状态时的表观热导率。结果表明,热沉温度为274 K时,冷端可以达到221.4 K并实现77.5 K的冷、热端温差;当输入电流一定时,随着热负载的增加,冷、热端温差呈线性趋势减小,且斜率随着输入电流增大而增大;二级热电制冷器冷、热端温差在较高温度时更大,即制冷性能更好;当温度分别为233.1 K 和249.8 K时,表观热导率分别为11.30 W/(m·K)和8.29 W/(m·K)。     

平面型InGaAs红外探测器I-V特性研究

采用闭管扩散方式,利用SiO2及Si3N4扩散掩膜在NIN型InP/In0.53Ga0.47As/InP外延材料上制备了两种不同的平面型InGaAs红外探测器,研究了室温下不同扩散区面积的两种器件的正向I-V特性及反向暗电流密度与器件周长面积比的关系,结果表明,扩散区边缘的钝化是平面型InGaAs探测器的制备过程中非常重要的一环,而且Si3N4薄膜的钝化效果优于SiO2薄膜。室温下和-0.1V偏压下,采用Si3N4扩散掩膜的器件的暗电流密度约为20nA/cm2。     

Monolithic InGaAs photodiode array illuminated through an integrated waveguide

A linear array of InGaAs PIN photodiodes has been fabricated which can be illuminated through a slab waveguide from the opposite side of the InP substrate via total reflection at a V-groove mirror. Absorption losses in the double-heterostructure waveguide are 2.5 dB/cm. The internal quantum efficiency of the photodiodes, including the mirror loss, is 87%, and an optical crosstalk between the diodes better than ?40 dB was measured.     

Ultraviolet, visible, and infrared response of PtSiSchottky-barrier detectors operated in the front-illuminated mode

The quantum efficiency of PtSi Schottky-barrier detectors has been measured as a function of wavelength from 0.23 to 7 μm. For front-illuminated PtSi/p-Si devices operated at low temperatures, quantum efficiencies of 40 to 70% are obtained in the ultraviolet (UV) and visible regions with little loss of the infrared (IR) photoresponse that is obtained for operation in the conventional back-illumination mode. For room-temperature operation of front-illumination PtSi/n-Si devices, the quantum efficiencies are approximately the same in the UV and visible regions, but the IR response decreases abruptly beyond the Si absorption edge. Room-temperature transmission and reflection measurements have been used to determine the values of the real and imaginary parts of the complex dielectric constant for PtSi at wavelengths from 0.2 to 3 μm. A simple model, used with these values and published values of the dielectric constant for Si, yields calculated quantum efficiencies in the UV and visible regions that agree quite well with the measured efficiencies. The temporal response of front-illuminated PtSi/p-Si detectors in the visible and IR regions is found to be fast enough for operation at video frame rates     

Optoelectronic properties of InGaAs/InGaAsP multiple-quantum-wellwaveguide detectors

The performance of InGaAs/InGaAsP multiple-quantum-well material as the absorbing medium in waveguide detectors is discussed. No deleterious saturation effects were observed up to an absorbed power of ~1 mW, with strong enough absorption for a four-well separate confinement heterostructure to provide ⩾80% quantum efficiency for lengths at least as short as 114 μm. The frequency response up to 5 GHz shows only a simple parasitic-limited rolloff which matches the measured impedance. These results provide sound evidence that the carrier trapping problem in this quantum-well material combination is much less serious than that in other material systems. This has important consequences not only for quantum-well field effect optical devices, but also for photonic integration, since the same quantum-well layers can simultaneously serve as a gain medium and as a detecting medium     

InGaAs纳米线雪崩焦平面探测器发展研究

基于InGaAs纳米线的光电探测器,由于其优异的性能而受到广泛的关注和研究。综述了InGaAs纳米线光电探测器的探测机理、材料结构、器件性能和当前的研究现状。讨论了InGaAs纳米线雪崩焦平面探测器结构设计、纳米线材料精密生长、纳米线材料的界面与缺陷控制、纳米线雪崩焦平面器件制备工艺等关键技术。对发展高光子探测效率、低噪声、高增益InGaAs纳米线雪崩焦平面探测器的前景进行了展望。     

硅全耗尽背照式光电二极管的光谱响应

建立了一个预测硅全耗尽背照式光电二极管响应率的解析模型.分析了所加反偏压与光谱响应之间的关系,解出了硅全耗尽背照式光电二极管的响应率和器件各参数之间的关系,并根据选定参数值计算出了给定外加偏压下400～1 100 nm范围的光谱响应曲线,预测探测器光谱响应峰值在1μm,峰值响应率达到0.72 A/W.实测结果表明:器件峰值响应与预测一致,反偏压对响应率的影响与预测相同,即响应率随着反偏压的升高而增大.并且在各种反偏压下的光谱响应曲线形状与预测基本吻合,证明了建立的模型可以正确地预测器件性能.     

Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique

To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current (LBIC) technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined.