Photosensitization of nanocrystalline TiO2 films by a polymer with two carboxylic groups, poly (3-thiophenemalonic acid)

Photovoltaic devices were assembled using a conducting polymer; poly (3-thiophenemalonic acid) sensitized TiO₂ electrodes and an electrolyte containing I₃⁻/I⁻ redox couple. This cell exhibited a short-circuit photocurrent (J_sc) of 6.65 mA cm⁻², an open circuit voltage (V_oc) of 355 mV and an efficiency of 1.5% under the illumination of 100 mW cm⁻² (AM 1.5). Addition of an ionic liquid, 1-methyl 3-n-hexylimidazolium iodide, into the electrolyte led to an improvement in the cell performances, achieving an overall efficiency of 1.8% under the same illumination. The average cell characteristics of the later devices are , with a fill factor of 0.65.     

Solid-state photoelectrochemical device based on poly(3-hexylthiophene) and an ion conducting polymer electrolyte, amorphous poly(ethylene oxide) complexed with I3/I redox couple

The photoelectrochemical properties of a solid-state photoelectrochemical cell (PEC) based on poly(3-hexylthiophene), P3HT, and an ion-conducting polymer electrolyte, amorphous poly(ethylene oxide), POMOE, complexed with I₃⁻/I⁻ redox couple has been constructed and studied. The current–voltage characteristics in the dark and under white light illumination, transient photocurrent and photovoltage studies, photocurrent action spectra for front and back side illuminations and an open-circuit voltage and short-circuit current dependence on light intensity have been studied. An open-circuit voltage of 130 mV and a short-circuit current of 0.47 μA cm⁻² were obtained at light intensity of 100 mW/cm². IPCE% of 0.024% for front side illumination (ITO/PEDOT) and IPCE% of 0.003% for backside illumination (ITO/P3HT) were obtained.     

A new model of very high efficiency buried emitter silicon solar cell

In this work, we report a new model of symmetrical silicon solar structure where the emitter is buried, thus, creating many depletion regions in series inside the cell. The photocurrent in this model is computed for AM0 solar spectrum and is compared to the classical p-n junction. The first results of the calculation show that the buried emitter solar cell (BESC) has 10–35% more short-circuit current than the classical cell depending on the surface recombination velocity S. The biggest difference is obtained for S = 10⁵cm/s. The ratio of the photocurrent in the BESC to the classical photocurrent as a function of the absorption coefficient a goes from 1.9 for small α to 6.5 times for α = 10⁷cm⁻¹ with a minimum of 1.1 for α around 1800 cm⁻¹ for S = 10⁵cm/s.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.     

Deposition of highly photoconductive wide band gap a-SiOx:H thin films at a high temperature without H2-dilution

Electrical and optical characterisation of hydrogenated amorphous silicon–oxygen alloy thin films (a-SiO_x:H, x<2) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature of 300 °C is presented. The samples were investigated by Fourier transform infrared spectroscopy (FTIR), optical transmission, the constant photocurrent method (CPM), conductivity and steady-state photoconductivity measurements. With increasing oxygen concentration, the Tauc gap increases from 1.69 to 2.73 eV. The sample with an oxygen concentration of 26.2 at% and a reasonably high bandgap of 2.18 eV shows photoconductivity comparable to that of pure a-Si:H films. The Urbach parameter (E₀) increases almost linearly with oxygen concentration whereas the dangling bond defect density is found to be saturating at a value of about 7.1×10¹⁶ cm⁻³. One of the highly alloyed samples with exhibited a detectable photosensitivity.     

The effect of temperature on the charge transport and transient absorption properties of K27 sensitized DSSC

The charge transport and transient absorption properties of K27 dye-sensitized solar cell have been investigated. The current–voltage (I–V) characteristics of the solar cell were analyzed by the thermionic emission theory. The ideality factor, barrier height and series resistance values of the solar cell were determined. The ideality factor higher than unity indicated the presence of non-ideal behavior in current–voltage characteristics at lower voltages. At the higher voltages, the charge transport mechanism for the solar cell is controlled by a space-charge limited current (SCLC) with an exponential distribution of traps. The built potential values are determined from capacitance–voltage plot and were found to be 0.14 and 0.58 V, respectively. The transient absorption data of K27 DSSC device suggest that the fast and slow phases are taking place. While the fast phase corresponds to regeneration of the dye cation by the iodide redox couple, the slow phase corresponds to the decay of long-lived I₂⁻/ TiO₂ electron absorption. The best conversion efficiency for K27 DSSC was found to be 0.317% under 100 mW/cm² (FF=0.584, V_oc=480 mV, I_sc=1.131 mA). The photocurrent results indicate that the photogeneration of charge carriers is a monophotonic process.     

Composition, surface topography, structure, Raman, and electrochemical/photoelectrochemical characterisation of CdxHg1−xTe films

Cd-rich Cd_xHg_{1 − x}Te films have been electrodeposited under potentiostatic conditions on conducting glass and Ti substrates from an acidic solution containing the respective ions as Cd²⁺:Hg²⁺:HTeO₂⁺ = 100:1:2. Six films one after another have been prepared from a single electrochemical cell. EDAX analysis of the air annealed films show decreasing Hg content in the deposit as the number of film preparation increases. SEM analysis indicate undulatory surface with Hg-rich clusters at the top surface. XRD analysis indicate the presence of Cd_xHg_{1 − x}Te along with . The Cd_xHg_{1 − x}Te alloy formation have been confirmed from Raman shift measurements which change with composition, x. The as-deposited films are n-type but converts to p-type after air annealing. Spectral response measurements gave band gap values that change with Hg content in the deposit. Band gap values ranging from 1.1 eV to 1.45 eV have been estimated. Photoelectrochemical solar cells using polysulphide electrolyte have been fabricated which gave an open-circuit photovoltage and short-circuit photocurrent, respectively, as 325 mV and 5.5 mA/cm² under 60 mW/cm² intensity of illumination.     

Effect of proton irradiation on electrical properties of CuInSe2 thin films

High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe₂ (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (0 0 1) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1×10¹³ cm⁻², the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm⁻¹. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300 K. From the temperature dependence of the carrier concentration in CIS thin films, we found N_D=9.5×10¹⁶ cm⁻³, N_A=3.7×10¹⁶ cm⁻³ and E_D=21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and N_T=1×10¹⁷ cm⁻³ for a fluence of 3×10¹³ cm⁻², N_T=5.7×10¹⁷ cm⁻³ for a fluence of 1×10¹⁴ cm⁻² and E_T=95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.     

Performance of p-type silicon-oxide windows in amorphous silicon solar cell

a-SiO_x films have been prepared using silane and pure oxygen as reactive gases in plasma CVD system. Diborane was introduced as a doping gas to obtain p-type conduction silicon oxide. Infrared absorption spectra show the incorporation of Si–O stretch mode around 1000 cm⁻¹. The optical bandgap increases with the oxygen to silane gas ratio, while the electrical conductivity decreases. Hydrogenated amorphous silicon solar cells have been fabricated using p-type a-SiO_x with around 1.85 eV optical bandgap and conductivity greater than 10⁻⁷ S/cm. The measured current–voltage characteristics of the solar cells under 100 mW/cm² artificial light are V_oc=0.84 V, J_sc=14.7 mA/cm², FF=0.635 with a conversion efficiency of 7.84%.     

Photoelectrochemical properties of rhodamine-C18 sensitized p-CuSCN photoelectrochemical cell (PEC)

Surface states in p-type Cu^I thiocyanate (CuSCN) were detected from I−V characteristics, diffuse reflectance spectra, and photocurrent action spectra. The p-CuSCN films are sensitized by rhodamine with octadecyl-alkyl chain, and the sensitized photocurrent is observed with the visible light illumination. In spite of the surface states in p-CuSCN, the maximum photocurrent quantum efficiency (gf_max) at λ = 560 nm, in 1 × 10⁻⁴ M KI + I₂ solution, pH = 6, reached 8.6%, where the surface dye concentration of photocathode Cu/p-CuSCN/Dye was 1.1 × 10¹⁴ molecules cm⁻². Photocathodes were biased at −0.25 V versus AgCl/Ag to give a zero dark current. From the variation of φ values with the reduction potential of electron acceptors, the cathodic sensitization mechanism presented is further confirmed.     

Influence of alkylaminopyridine additives in electrolytes on dye-sensitized solar cell performance

The influence of alkylaminopyridine additives on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell with an I⁻/I₃⁻ redox electrolyte in acetonitrile was studied. The current–voltage characteristics were measured for more than 20 different alkylaminopyridines under AM 1.5 (100 mW/cm²). The alkylaminopyridine additives tested had varying effects on the performance of the cell. All the additives decreased the short circuit photocurrent density (J_sc), but increased the open-circuit photovoltage (V_oc) of the solar cell. Molecular orbital calculations imply that the dipole moment of the alkylaminopyridine molecules influences the J_sc of the cell and that the size, solvent accessible surface area, and ionization energy all affect the V_oc of the cell. The highest V_oc of 0.88 V was observed in an electrolyte containing 4-pyrrolidinopyridine, which is comparable to the maximum V_oc of 0.9 V for a cell consisting of TiO₂ electrode and I⁻/I₃⁻ redox system.     

A polymer gel electrolyte composed of a poly(ethylene oxide) copolymer and the influence of its composition on the dynamics and performance of dye-sensitized solar cells

A polymer gel electrolyte composed of a poly(ethylene oxide) derivative, poly(ethylene oxide-co-2-(2-methoxyethoxy) ethyl glycidyl ether), mixed with gamma-butyrolactone (GBL), LiI and I₂ is employed in dye sensitized solar cells (DSSC). The electrolyte is characterized by conductivity experiments, Raman spectroscopy and thermal analysis. The influence of the electrolyte composition on the kinetics of DSSC is also investigated by transient absorption spectroscopy (TAS). The electrolyte containing 70 wt.% of GBL and 20 wt.% of LiI presents the highest conductivity (1.9 × 10⁻³ S cm⁻¹). An efficiency of 4.4% is achieved using this composition. The increase in I_SC as a function of GBL can be attributed an increase in the mobility of the iodide (polyiodide) species. The increase in the yield of the intermediate species, I₂⁻, originating in the regeneration reaction, is confirmed by TAS. However, the charge recombination process is faster at this composition and a decrease in the V_oc is observed. Photovoltage decay experiments confirm an acceleration in charge recombination for the DSSC assembled with the electrolyte containing more GBL. Raman investigations show that in this electrolyte the I₅⁻/I₃⁻ ratio is higher. Theoretical calculations also indicate that the I₅⁻ species is a better electron acceptor.     

Preparation and characterisation of electrodeposited n-CdS/p-CdTe thin film solar cells

Cadmium sulphide and cadmium telluride films have been electrodeposited for n-CdS/p-CdTe solar cells. Cell efficiency varied considerably from 9.5% to 11.5% for each deposition set. The reverse saturation currents of 9.5% and 11.5% cells at 298 K were 25 and 6.7 nA cm⁻², respectively. The cells with higher efficiency has a lower number of interface states than the less efficient cells. The 11.5% cell had interface states (N_IS) of 3× 10¹⁰ cm⁻² eV⁻¹ at zero volt bias in dark and when it was illuminated with 35 mW cm⁻² light at zero volt bias N_IS increased by two orders to 1.2×10¹² cm⁻² eV⁻¹. At higher frequency the large voltage intercept of the Mott-Schottky plot indicates the existence of the near intrinsic layer of the polycrystalline heterojunction.     

Blue sensitizers for solar cells: Natural dyes from Calafate and Jaboticaba

Blue-violet anthocyanins from Jaboticaba (Myrtus cauliflora Mart) and Calafate (Berberies buxifolia Lam) were employed as TiO₂ dye-sensitizers. Solar cells sensitized by Jaboticaba extracts achieved up to J_sc=9.0 mA cm⁻², V_oc=0.59 V, P_max=1.9 mW cm⁻² and ff=0.54, while for Calafate sensitized cells the values determined were up to J_sc=6.2 mA cm⁻², V_oc=0.47 V, P_max=1.1 mW cm⁻² and ff=0.36. Other natural dyes were evaluated without significant photocurrent, demonstrating that only selected extracts are capable of converting sunlight in electricity. The results obtained with extracts of Jaboticaba and Calafate show a successful conversion of visible light into electricity by using natural dyes as wide band-gap semiconductor sensitizers in dye-sensitized solar cells. It also represents an environmentally friendly alternative for dye-sensitized solar cells with low cost production and an excellent system for educational purposes.     

Photoelectrochemical and physical properties of WO3 films obtained by the polymeric precursor method

Tungsten trioxide (WO₃) films were prepared by a solution-based method using ammonium metatungstate as the precursor and polyethylene glycol as the structure-directing agent. With the measurements of thermogravimetric and differential thermal analysis, X-ray diffraction, scanning electron microscopy, and ultraviolet and visible absorption spectroscopy, the effect of substrates and temperature on the crystal structure and crystalline formation of WO₃ was investigated. The results show that the WO₃ films were crystallized by sintering at over 400 °C, and the films prepared on fluorine–tin oxide glass substrates were distorted cubic in crystalline phase. However, a monoclinic crystal was formed by coating films on graphite and quartz glass substrates. Photoelectrochemical activity was evaluated under visible light irradiation. The WO₃ electrode calcined at 450 °C exhibited a photocurrent density of up to 2.7 mA/cm² at 1.4 V (vs. RHE) under incident 100 mW/cm² 500 W Xe lamp and donor carrier density N_D = 2.44 × 10²² cm⁻³ in 0.5 M H₂SO₄ electrolyte. The photoanode was stable up to 90 min, and the photocurrent decreased 39% with continuous gas evolution.     

Characterization of CuInSe2/CdS thin-film solar cells prepared using CBD

CuInSe₂/CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J−V characteristics of the devices prepared with different thicknesses of CdS and CuInSe₂ were studied. The typical solar cell parameters obtained for the best cell are: V_oc = 365 mV, J_sc = 12 mA/cm², FF = 61%, and η = 3.1% under an illumination of 85 mW/cm² on a cell of active area 0.1 cm². The J−V and C−V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7.     

Influence of alkylpyridine additives in electrolyte solution on the performance of dye-sensitized solar cell

The influence of alkylpyridines additive to an I⁻/I₃⁻ redox electrolyte in acetonitrile on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell was studied. I–V measurements were performed using more than 30 different alkylpyridines. The alkylpyridine additives showed a significant influence on the performance of the cell. All the additives decreased the short-circuit photocurrent (J_sc), but most of the alkylpyridines increased the open-circuit photovoltage (V_oc) and fill factor (ff) of the solar cell. The results of the molecular orbital calculations suggest that the dipole moment of the alkylpyridine molecules correlate with the J_sc of the cell. These results also suggest that both the size and ionization energy of pyridines correlate with the V_oc of the cell. Under AM 1.5 (100 mW/cm²), the highest solar energy conversion efficiency (η) of 7.6% was achieved by using 2-propylpyridine as an additive, which was more effective than the previously reported additive, 4-t-butylpyridine.     

Photoelectrochemical response and differential capacitance of poly(3-methylthiophene)

Following the theory used to study the semiconductor/electrolyte interface the differential capacitance of poly(3-methylthiophene) films has been determined from measurements with a lock-in amplifier and by electrochemical impedance spectroscopy (EIS). According to our findings, the best results were obtained by EIS because the space charge capacitance can be separated from the other capacitances. Using Mott–Schottky plots (C⁻² vs. E) we obtained the flat band potential E_fb=80 mV and the carrier density N=6×10¹⁷ cm⁻³ for the PMeT film in contact with the electrolyte, where dissolved O₂ played the role of the electron acceptor. The determined width of the depletion layer is 0.04 μm. We also investigated the photoelectrochemical response of the PMeT film. The plot of the square of the photocurrent vs. potential yields E_fb=90 mV, in good agreement with the EIS measurement. The dependence of the photocurrent with the frequency of the incident light shows that PMeT has a long response time (order of ms), compared to an inorganic semiconductor. The band gap was also determined from the photocurrent spectra. The value obtained, for a direct transition is 1.9 eV and is coincident with the value obtained from the absorption spectra.     

Fabrication of a solid-state cell using vitamin C as sensitizer

A naturally available compound, ascorbic acid, was used as a sensitizer in a solid-state cell based on TiO₂ and CuI. Photo-excited ascorbic acid molecules inject electrons into the conduction band of TiO₂ and holes into the valance band of CuI, thus leading to photovoltage and photocurrent. The maximum photocurrent of 1.0 mA cm⁻² and photovoltage of 100 mV were observed for the solid-state TiO₂/ascorbic acid/CuI cell with an effective area of 0.25 cm², under AM 1.5 conditions.     

Semiconductor-sensitized solar cells based on nanocrystalline In2S3/In2O3 thin film electrodes

A possibility of semiconductor-sensitized thin film solar cells have been proposed. Nanocrystalline In₂S₃-modified In₂O₃ electrodes were prepared with sulfidation of In₂O₃ thin film electrodes under H₂S atmosphere. The band gap (E_g) of In₂S₃ estimated from the onset of the absorption spectrum was approximately 2.0 eV. The photovoltaic properties of a photoelectrochemical solar cell based on In₂S₃/In₂O₃ thin film electrodes and I⁻/I₃⁻ redox electrolytes were investigated. This photoelectrochemical cell could convert visible light of 400–700 nm to electron. A highly efficient incident photon-to-electron conversion efficiency (IPCE) of 33% was obtained at 410 nm. The solar energy conversion efficiency, η, under AM 1.5 (100 mW cm⁻²) was 0.31% with a short-circuit photocurrent density (J_sc) of 3.10 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.26 V, and a fill factor ( ff ) of 0.38.