PROCESS CHARACTERISTICS OF HoBa_2Cu_3O_（7－δ） AND EFFECT OF MAGNETIC FIELD ON SUPERCONDUCTIVITY OF REBa_2Cu_3O_（7－δ） （RE＝Y，Ho）

ＰＲＯＣＥＳＳＣＨＡＲＡＣＴＥＲＩＳＴＩＣＳＯＦＨｏＢａ_２Ｃｕ_３Ｏ_（７－δ）ＡＮＤＥＦＦＥＣＴＯＦＭＡＧＮＥＴＩＣＦＩＥＬＤＯＮＳＵＰＥＲＣＯＮＤＵＣＴＩＶＩＴＹＯＦＲＥＢａ_２Ｃｕ_３Ｏ_（７－δ）（ＲＥ＝Ｙ，Ｈｏ）￥Ｙｉ，Ｊｉａｎｈｏｎｇ；Ｐｅｎ...     

INFLUENCE OF ALLOYING ELEMENTS（Nb，Mo，V） ON MICROSTRUCTURE OF Ti_3Al BASE ALLOYS

ＩＮＦＬＵＥＮＣＥＯＦＡＬＬＯＹＩＮＧＥＬＥＭＥＮＴＳ（Ｎｂ,Ｍｏ,Ｖ）ＯＮＭＩＣＲＯＳＴＲＵＣＴＵＲＥＯＦＴｉ_３ＡｌＢＡＳＥＡＬＬＯＹＳ￥ＳＯＮＧＤａｎ;ＤＩＮＧＪｉｎｊｕｎ;ＷＡＮＧＹａｎｄｏｎｇ（ＡｎａｌｙｓｉｓａｎｄＴｅｓｔｉｎｇＣｅｎｔｅ?..     

MAGNETOSTRICTIVE BEHAVIOUR OF R（Fe_（1－x）Al_x）_y ALLOYS（R＝Dy_（0．65）Tb_（0．25）Pr_（0．1））

ＭＡＧＮＥＴＯＳＴＲＩＣＴＩＶＥＢＥＨＡＶＩＯＵＲＯＦＲ（Ｆｅ_（１－ｘ）Ａｌ_ｘ）_ｙＡＬＬＯＹＳ（Ｒ＝Ｄｙ_（０．６５）Ｔｂ_（０．２５）Ｐｒ_（０．１））￥ＷＡＮＧＢｏｗｅｎ;ＷＵＣｈａｎｇｈｅｎｇ;ＺＨＵＡＮＧＹｕｚｈｉ;ＪＩＮＸｉｍｅｉ;ＬＩＪｉ...     

MICROSTRUCTURE，INTERFACE AND MECHANICAL PROPERTIES OF NiAl－BASED COMPOSITES REINFORCED BY TiB_2 PARTICULATES

ＭＩＣＲＯＳＴＲＵＣＴＵＲＥ，ＩＮＴＥＲＦＡＣＥＡＮＤＭＥＣＨＡＮＩＣＡＬＰＲＯＰＥＲＴＩＥＳＯＦＮｉＡｌ－ＢＡＳＥＤＣＯＭＰＯＳＩＴＥＳＲＥＩＮＦＯＲＣＥＤＢＹＴｉＢ_２ＰＡＲＴＩＣＵＬＡＴＥＳＧＵＯＪｉａｎｔｉｎｇ（ＩｎｓｔｉｔｕｔｅｏｆＭｅｔａ?..     

MICROSTRUCTURE AND MECHANICAL PROPERTIES OF Fe_3Al BASED ALLOYS

ＭＩＣＲＯＳＴＲＵＣＴＵＲＥＡＮＤＭＥＣＨＡＮＩＣＡＬＰＲＯＰＥＲＴＩＥＳＯＦＦｅ_３ＡｌＢＡＳＥＤＡＬＬＯＹＳＤ．Ｇ．ＭＯＲＲＩＳ（ＩｎｓｔｉｔｕｔｅｏｆＳｔｒｕｃｔｕｒａｌＭｅｔａｌｌｕｒｇｙ，ＡｖｅｎｕｅｄｅＢｅｌｌｅｖａｕｘ５１，Ｕｎｉｖｅｒ?..     

MAGNETIC PROPERTIES AND CRYSTALLIZATION BEHAVIOR OF AN AMORPHOUS（Fe＿（1－x）Mo＿x）＿（79）Si＿9B＿（13）ALLOY

ＭＡＧＮＥＴＩＣＰＲＯＰＥＲＴＩＥＳＡＮＤＣＲＹＳＴＡＬＬＩＺＡＴＩＯＮＢＥＨＡＶＩＯＲＯＦＡＮＡＭＯＲＰＨＯＵＳ（Ｆｅ＿（１－ｘ）Ｍｏ＿ｘ）＿（７９）Ｓｉ＿９Ｂ＿（１３）ＡＬＬＯＹＭＡＧＮＥＴＩＣＰＲＯＰＥＲＴＩＥＳＡＮＤＣＲＹＳＴＡＬＬＩＺＡＴＩ...     

MICROSTRUCTURE AND J_c OF Y－Ba－Cu－O SUPERCONDUCTOR AFTER P_（o_2）－ALTERNATIVE HEAT TREATMENT

ＭＩＣＲＯＳＴＲＵＣＴＵＲＥＡＮＤＪ_ｃＯＦＹ－Ｂａ－Ｃｕ－ＯＳＵＰＥＲＣＯＮＤＵＣＴＯＲＡＦＴＥＲＰ_（ｏ_２）－ＡＬＴＥＲＮＡＴＩＶＥＨＥＡＴＴＲＥＡＴＭＥＮＴ￥Ｃｈｅｎ，Ｋａｎｇｈｕａ；Ｈｕａｎｇ，Ｐｅｉｙｕｎ（ＰｏｗｄｅｒＭｅｔａｌｌｕｒｇｙＲ?..     

THE EFFECT OF SILICON ADDITIVE ON THESTRUCTURE AND PROPERTIES OFC－B_4C－SiC COMPOSITE

ＴＨＥＥＦＦＥＣＴＯＦＳＩＬＩＣＯＮＡＤＤＩＴＩＶＥＯＮＴＨＥＳＴＲＵＣＴＵＲＥ　ＡＮＤＰＲＯＰＥＲＴＩＥＳＯＦＣ－Ｂ_４Ｃ－ＳｉＣＣＯＭＰＯＳＩＴＥＨＵＡＮＧＱｉｚｈｏｎｇ;ＹＡＮＧＱｚａｏｑｉｎａｎｄＷＵＬｉｊｕｎ（ＰｏｗｄｅｒＭｅｔａｌｌｕｒｇ?..     

ANALYSIS OF HYDRAULIC POWER SOURCES DISPOSITION AND ENERGY CONSUMPTION FOR HYDRAULIC DRILL RIG

ＡＮＡＬＹＳＩＳＯＦＨＹＤＲＡＵＬＩＣＰＯＷＥＲＳＯＵＲＣＥＳＤＩＳＰＯＳＩＴＩＯＮＡＮＤＥＮＥＲＧＹＣＯＮＳＵＭＰＴＩＯＮＦＯＲＨＹＤＲＡＵＬＩＣＤＲＩＬＬＲＩＧ￥Ｈｅ，Ｑｉｎｇｈｕａ（ＤｅｐａｒｔｍｅｎｔｏｆＭａｃｈｉｎｅＥｎｇｉｎｅｅｒｉｎｇ，...     

NUMERICAL SIMULATION OF ALTERNATIVE HORIZONTAL LEVITATION ELECTROMAGNETIC CONTINUOUS CASTING（Ⅱ）

ＮＵＭＥＲＩＣＡＬＳＩＭＵＬＡＴＩＯＮＯＦＡＬＴＥＲＮＡＴＩＶＥＨＯＲＩＺＯＮＴＡＬＬＥＶＩＴＡＴＩＯＮＥＬＥＣＴＲＯＭＡＧＮＥＴＩＣＣＯＮＴＩＮＵＯＵＳＣＡＳＴＩＮＧ（Ⅱ）￥ＺｈｕＳｈｏｕｊｕｎ；ＲｅｎＺｈｏｎｇｍｉｎｇ；ＤｅｎｇＫａｎｇ；Ｊｉａｎ...     

沉积温度对Ge2Sb2Te5溅射薄膜结构、电/光性质的影响

在衬底加热条件下利用磁控溅射法制备Ge2Sb2Te5薄膜,利用X射线衍射仪表征各种沉积温度下薄膜的结构,差示扫描量热法(DSC)确定的薄膜晶化温度为168℃(加热升温速率为5℃/min)。用四探针法测试薄膜的方块电阻,分光光度计测试薄膜的反射率谱,并根据反射率数据讨论在波长为405和650nm时薄膜的反射率对比度同沉积温度关系。结果表明:室温沉积的薄膜为非晶态;在衬底温度为140℃条件下薄膜已完全转变为晶态Ge2Sb2Te5,在300℃时出现少量的六方相;低于140℃时易形成非Ge2Sb2Te5组分的其它晶相,它们对薄膜的电/光性质有很大的影响,可能是导致此类相变光存储薄膜使用过程中反射率对比度下降的原因。     

Mn5Ge3-xRx系列合金在低磁场下的磁热效应

在对Mn5Ge3合金研究的基础上,以Si,Sb元素取代Mn5Ge3合金中的部分Ge元素,形成Mn5Ge3-xSix,Mn5Ge3-xSbx系列合金。利用X射线粉末衍射技术确定其结构,并在1．3T的磁场下直接测量其磁热效应。结果表明,随着Sb元素含量的增加,Mn5Ge3-xSbx合金的居里温度升高,少量的Sb元素对合金的磁热效应影响较小;随着Si元素含量的增加,Mn5Ge3-xSix合金的居里温度降低,磁热效应发生明显的衰减。     

Isothermal section of the Pt–Sb–Te system at 1000 °C

The phase relations in the system Pt–Sb–Te have been investigated at 1000 °C, using sealed glass capsule techniques. The reaction products have been studied by reflected light microscopy, X-ray diffraction, and electron probe microanalysis. At 1000 °C, Pt, PtSb, PtSb₂, Pt₃Te₄, and PtTe₂ are the stable solid phases. There are two liquid phase fields: a large field extends across the ternary system from the Pt–Sb join to the Pt–Te join, the other as a thin strip near the Sb–Te join. PtSb becomes Pt-poor up to 3 at.% from stoichiometry as substitution of Te for Sb and Pt increases. PtSb₂ and PtTe₂ exhibit the largest solid solution range among the solid phases present.     

机械合金化法制备的Mn15Bi34Te51和La15Bi34Te51热电材料

用机械合金化法制备了Mn15Bi34Te51和La15Bi34Te51合金，XRD分析表明Mn15Bi34Te51和La15Bi34Te51分别在真空球磨150h和100h后实现合金化，La15Bi34Te51在真空球磨150h后形成了纳米结构的合金，镧原子的加入有助于Bi2Te3基合金的晶粒细化及非晶化。对La15Bi34Te51合金的XRD结构分析表明镧原子有可能进入了Bi2Te3层状结构的Te-Te原子层间。La15Bi34Te51合金Seebeck系数的测量表明当晶粒尺寸减小到纳米尺寸时，载流子散射机制有可能发生改变，导致了Seebeck系数的大幅上升。     

急冷甩带过程和过量Te对p型Bi0.5Sb1.5Te3化合物热电性能的影响

采用感应熔炼制备得到了P型Bi0.5 Sb1.5Te3+x％(质量)Te(x=0、2、4和6)合金.将合金均匀分成R和S两组,R组不作处理,S组通过急冷甩带过程获得厚度约为5～15 μm的薄带,然后将两组样品分别粉碎过筛后,热压烧结成块体材料.利用扫描电镜(SEM)观察了薄带和烧结块体的形貌结构,在室温下测量其电性能....     

掺杂Al的(In2Te3)0.09(SnTe)0.91化合物热电性能

以等摩尔分数的Al元素替代(In2Te3)0.09(SnTe)0.91中的In元素,利用放电等离子烧结技术、采用相同的工艺制备了(In2Te3)0.09(SnTe)0.91和(In1.9Al0.1Te3)0.09(SnTe)0.912种化合物,并对两者的微观结构和热电性能进行对比。结果表明,掺杂Al元素后,材料的Seebeck系数降低很小,电导率为1×1052.3×1051·m1,是掺杂前的2.43倍,晶格热导率L值大幅度降低。在693K时,掺杂Al后的化合物ZT值达到最大值0.4,是同温度下掺杂前ZT值的2倍。     

Low temperature sputter deposition of SnOx:Sb films for transparent conducting oxide applications

SnO_x:Sb films have been prepared by reactive dc magnetron sputtering from a metallic target, with the aim of evaluating the potential of SnO_x:Sb as an attractive low-cost alternative to In₂O₃:Sn (ITO) for TCO applications. The deposition was performed without any additional heating of the substrates. The films were subsequently analysed regarding their optical, electrical and structural properties. Our results show that there is only a narrow process window for the sputter deposition of transparent and conducting tin oxide films at low temperature. A sharp minimum in resistivity of 4.9 mΩ cm is observed at an oxygen content of approximately 17% in the sputtering gas. Under these deposition conditions, the SnO₂:Sb films turn out to be both highly transparent and crystalline. At lower oxygen content (10-15%) the SnO_x:Sb films are substoichiometric, as revealed by Rutherford backscattering, and show a low transmission and high resistivity due to numerous defects and the presence of the SnO phase. At higher oxygen content (> 17%) excess oxygen is incorporated into the films, which is attributed to an increase of oxygen ion bombardment. This leads to a degradation of the electrical properties and a decrease of the density of the films, whilst the optical transmittance slightly improves.     

Thermoelectric properties of Bi_(0.5)Sb_(1.5)Te_3/polyaniline composites prepared by mechanical blending and in-situ polymerization

1　ＩＮＴＲＯＤＵＣＴＩＯＮＴｈｅｒｍｏｅｌｅｃｔｒｉｃｍａｔｅｒｉａｌｓａｒｅｕｓｅｄｔｏｃｏｎｖｅｒｔｔｈｅｒｍａｌｅｎｅｒｇｙｄｉｒｅｃｔｌｙｔｏｅｌｅｃｔｒｉｃｅｎｅｒｇｙｏｒｉｎｒｅ ｖｅｒｓｅ[1～ 4 ] .Ｔｈｅ ｐｅｒｆｏｒｍａｎｃｅｏｆｔｈｅｔｈｅｒｍｏｅｌｅｃｔｒｉｃｍａｔｅｒｉａｌｓｉｓｄｅｔｅｒｍｉｎｅｄｂｙｔｈｅＳｅｅｂｅｃｋｃｏｅｆｆｉｃｉｅｎｔα ,ｔｈｅｅｌｅｃｔｒｉｃｃｏｎｄｕｃｔｉｖｉｔｙσ ,ａｎｄｔｈｅｔｈｅｒｍａｌｃｏｎｄｕｃ ｔｉｖｉｔｙκ ,ｏｒｂｙｔｈｅｉｒｃｏｍ…     

锗相的存在对Sr_8Ga_(16)Ge_(30)clathrates结构热电材料性能的影响

无机clathrate结构化合物是非常有前景的热电材料.在镓取代的锗基clathrate结构热电材料的合成中,普遍存在锗的第二相.本研究合成了多晶Sr_8Ga_(16)Ge_(30) clathrates 结构热电材料.用X射线衍射结合样品抛光表面的背散射电子像对样品中锗相的含量进行表征.测试可知,材料表现为n型半导体,随着Ge相含量的增大,Seebeck系数绝对值增大,电导和热导率减小.功率因子最大为12.8 μW·K~(-2)cm~(-1).Sr_8Ga_(16)Ge_(30)样品在650 K的最大ZT值达到0.65.     

Structural and optical properties of tellurium films obtained by chemical vapor deposition（CVD）

1 Introduction Te thin films have been extensively used in various technological areas, especially in microelectronic devices such as gas sensor [1?3], optical information storage [4] and other applications [5?7]. All these applications are due to remark…