Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

A GaN vertical light emitting diode(LED)with a current block layer(CBL)was investigated.Vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated.Optical and electrical tests were carried out.The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6%and 60.7%higher than that of vertical LEDs without a CBL at 350 mA,respectively.The efficiencies of vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%,78%and 85.5%of their maximum efficiency at 350 mA,respectively. Moreover,vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.     

Thermal resistance analysis and validation of flip chip PBGA packages

This work proposes a finite element numerical methodology to predict the thermal resistance of both flip chip-plastic ball grid array (FC-PBGA) with a bare die and FC-PBGA with a metal cap. The 3D finite element model was initially constructed to simulate the thermal resistance of FC-PBGA. A thermal resistance experiment was performed to verify the FEM results, following the construction of specimens of FC-PBGA with a bare die and with an aluminum cap, using six-layered substrate. The verified finite element model was employed to determine the thermal resistance of FC-PBGA with a copper cap using four-layered and six-layered substrates. Experimental results demonstrated that FC-PBGA with a metal cap improves thermal performance by 35% over with a bare die. FC-PBGA with a copper cap slightly improves thermal performance from 2% to 2.8% over that of FC-PBGA with an aluminum cap. The thermal resistance of FC-PBGA with a four-layered substrate is reduced by 4.0% to 5.9% from that of FC-PBGA with a six-layered substrate, since the four-layered substrate contains less metal. The finite element numerical results negligibly differ from the experimental results by 6% to 8.1%. A finite element numerical methodology is here proposed to predict the thermal resistance of FC-PBGA. The methodology is effective in researching and developing new products or improving existing packages.     

A 1-GHz active phase shifter with a ferroelectric varactor

An active phase shifter circuit implemented with discrete components is reported. The tuning element, a ferroelectric varactor, is a parallel plate capacitor with Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ (BST) as the dielectric. The circuit consists of two bipolar junction transistors coupled with a feedback network, which contains the varactor and thus produces a transfer function that can be varied with a control voltage. The active nature of the circuit allows for signal gain, while the BST varactor provides a high-Q tuning element. This represents an improvement over strictly passive phase shifters with ferroelectric elements. Circuit simulation results are presented and compared with measured data from the implemented system. The network, even with markedly nonideal transistors, can provide a true all-pass response over the frequency band of interest (200-1100 MHz). The measurement results demonstrate an analog tunability of about 100/spl deg/ with a gain variation of about 0.6 dB at I GHz when using a BST capacitor with a tunability of 2.75:1.     

Test-decompression mechanism using a variable-length multiple-polynomial LFSR

A new test-decompression methodology using a variable-rank multiple-polynomial linear feedback shift register (MP-LFSR) is proposed. In the proposed reseeding scheme, a test cube with a large number of specified bits is encoded with a high-rank polynomial, while a test cube with a small number of specified bits is encoded with a low-rank polynomial. Therefore, according to the number of specified bits in each test cube, the size of the encoded data can be optimally reduced. A variable-rank MP-LFSR can be implemented with a slight modification of a conventional MP-LFSR. The experimental results on the largest ISCAS'89 benchmark circuits show that the proposed methodology can provide much better encoding efficiency than the previous methods with adequate hardware overhead.     

Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers

Fully integrated CMOS power amplifiers (PAs) with parallel power-combining transformer are presented. For the high power CMOS PA design, two types of transformers, series-combining and parallel-combining, are fully analyzed and compared in detail to show the parasitic resistance and the turn ratio as the limiting factor of power combining. Based on the analysis, two kinds of parallel-combining transformers, a two-primary with a 1:2 turn ratio and a three-primary with a 1:2 turn ratio, are incorporated into the design of fully-integrated CMOS PAs in a standard 0.18-mum CMOS process. The PA with a two-primary transformer delivers 31.2 dBm of output power with 41% of power-added efficiency (PAE), and the PA with a three-primary transformer achieves 32 dBm of output power with 30% of PAE at 1.8 GHz with a 3.3-V power supply.     

Down-Sampling Design in DCT Domain With Arbitrary Ratio for Image/Video Transcoding

This paper proposes a designing framework for down-sampling compressed images/video with arbitrary ratio in the discrete cosine transform (DCT) domain. In this framework, we first derive a set of DCT-domain down-sampling methods which can be represented by a linear transform with double-sided matrix multiplication (LTDS) in the DCT domain and show that the set contains a wide range of methods with various complexity and visual quality. Then, for a preselected spatial-domain down-sampling method, we formulate an optimization problem for finding an LTDS to approximate the given spatial-domain down-sampling method for a trade-off between the visual quality and the complexity. By modeling LTDS as a multiple layer network, a so-called structural learning with forgetting algorithm is then applied to solve the optimization problem. The proposed framework has been applied to discover optimal LTDSs corresponding to a spatial down-sampling method with Butterworth low-pass filtering and bicubic interpolation. Experimental results show that the resulting LTDS achieves a significant reduction on the complexity when compared with other methods in the literature with similar visual quality.      

多单元压电陶瓷类变形镜高压驱动电源

针对变形镜压电陶瓷类驱动器单元数多的特点,设计一种高带宽适合扩展成多通道输出的压电陶瓷驱动电源,它利用光耦分相隔离从源极驱动功率NMOS管,简化了电路结构并保证了功率带宽。该驱动电源驱动100 nF容性负载时,可实现单端到地-300~＋300 V双极性高压输出,电压增益35.5 dB,信号不失真情况下,小信号响应频率达10 kHz,大信号响应频率2 kHz,瞬时充放电电流可达400 mA。实验表明该驱动电源的性能能够满足变形镜驱动的要求且电路结构简单。     

Broadband electronically tunable planar active radiating elementsand spatial power combiners using notch antennas

A Gunn device has been integrated with two types of active planar notch antennas. The first types uses a coplanar waveguide (CPW) resonator an a stepped-notched antenna with bias tuning to achieve a bandwidth of 275 MHz centered at 9.33 GHz with a power output of 14.2±1.5 dBm. The second type uses a CPW resonator with a varactor for frequency tuning to achieve a bandwidth of over 1.3 GHz centered at 9.6 GHz with a power output of 14.5±0.8 dBm. This is equivalent to over 14% electronic tuning bandwidth. Both configurations exhibit a very clean and stable output signal. A theoretical circuit model was developed to facilitate the design. The model agrees well with experimental results. Injection-locking experiments on the second configuration show a locking gain of 30 dB with a locking bandwidth of 30 MHz at 10.2 GHz. Power combining experiments of two-varactor-tuned CPW active notch antenna elements in a broadside configuration have achieved well over 70% combining efficiency throughout the wide tuning range. The circuits have advantages of small size, low cost, and excellent performance     

High-speed InP/InGaAs avalanche photodiodes with a compositionallygraded quaternary layer

InP/InGaAs avalanche photodiodes (APDs) with a compositionally graded quaternary layer at the heterointerface between the InGaAs absorption and InP multiplication regions were fabricated and tested. A comparison of samples with the graded layer and with conventional three quaternary layers showed that the frequency characteristics for samples with the graded layer did not deteriorate at a low bias voltage even below -100°C, unlike APDs with three InGaAsP layers. Thus, no hole trapping occurred at the InP/InGaAs heterointerface with the graded layer. A sample with the graded layer showed a cutoff frequency exceeding 9 GHz at a low multiplication factor of 2. The authors found InP/InGaAs APDs with the compositionally graded quaternary layer to be useful over a wide temperature range     

Time-frequency distributions with complex argument

A distribution highly concentrated along the group delay or the instantaneous frequency (IF) is presented. It has been defined by introducing a signal with a complex argument in time-frequency (TF) analysis. Realization of a signal with a complex argument, using a signal with a real argument, is described. The reduced interference realization of the complex argument distribution, in the case of multicomponent signals, is presented. The proposed distribution is used for the IF estimation. It is shown that the estimation can be improved with respect to the Wigner distribution based one since the bias can be significantly reduced with only a slight increase of the variance. The theory is illustrated by examples     

First-principles study of the lattice integration of palladium defects in doped germanium and silicon

Time-differential perturbed angular correlations spectroscopy of palladium in doped germanium has identified palladium-vacancy pairing in n-type antimony-doped, p-type gallium-doped and undoped germanium. In contrast, an equivalent study of palladium defects in doped silicon suggests a different scenario for the silicon host. Palladium-vacancy pairing has been proposed in n-type silicon irrespective of the dopant type (phosphorous, arsenic or antimony) but palladium–boron pairing has been speculated to occur in p-type boron-doped silicon. This thus raises the question: why does palladium pair with a dopant atom in p-type silicon, but with a vacancy in p-type germanium? Based on the density functional theory calculations carried out in this work, it is suggested that the size of the dopant and the host material both play a crucial role in determining the type of palladium-defect complex that is formed. The calculations predict a configuration with the palladium atom on a bond-centered interstitial site pairing with a semi-vacancy on either side in gallium-doped and antimony-doped silicon and germanium, respectively. Whereas, a configuration with the palladium atom on a bond-centered interstitial site pairing with the dopant was proposed in boron-doped silicon and germanium. In further support of the argument, in n-type phosphorous-doped materials the calculations predict a configuration with the palladium atom on a bond-centered interstitial site pairing with a semi-vacancy on either side in silicon, but a configuration with the palladium atom on a bond-centered interstitial site pairing with the phosphorous dopant in germanium.     

Multiple Magnetic Phases in Van Der Waals Mn-Doped SnS2 Semiconductor

2D van der Waals magnetic semiconductors have emerged along with the possibilities of achieving an efficient gate tunability and a proximity effect with a high magnetic anisotropy compared with 3D counterparts. Little explored are multiple magnetic phases with a single crystallographic phase. Herein, the multiple magnetic phases in a Mn-doped SnS₂ single crystal with different doping concentrations using a one-step self-flux method are reported. Two ferromagnetic phases with a canted spin direction exist regardless of the Mn-doping concentration at up to 5 at%. Antiferromagnetism coexists with the ferromagnetic order and strengthens at high Mn-doping concentrations. A magnetoresistance measurement conducted on a 2 at% Mn-SnS₂ flake exhibits a positive-to-negative crossover with a value of as high as 50% and clear anisotropy, confirming the presence of ferromagnetic order in the material. By revealing multiple magnetic phases in Mn-doped SnS₂, the study broadens the scope of state-of-the-art research on layered magnetic semiconductors.     

Tunable Photonic Microwave Filter Using a Superstructured FBG With Two Reflection Bands Having Complementary Chirps

A tunable photonic microwave bandpass filter using a superstructured fiber Bragg grating (SFBG) with two reflection bands having complementary chirps is proposed. Being different from a regular chirped FBG, which is usually fabricated using a chirped phase mask with a fixed chirp rate, the SFBG with complementary chirps is fabricated using a uniform phase mask and a chirped sampling function. The chirp rate of the sampling function can be designed to realize specific equivalent chirp rates that are complementary in the 1st-order and the 1st-order reflection bands of the SFBG. An SFBG with complementary chirps is fabricated and characterized. The use of the SFBG to implement a photonic tunable microwave filter with a negative coefficient is experimentally demonstrated.     

A Waveguide‐Like Effect Observed in Multiwalled Carbon Nanotube Bundles

The delay time of nanosecond electromagnetic pulses is measured in multiwalled carbon nanotube (MWCNT) bundles and copper wires, with a length of up to 3 cm, as compared with that in standard coaxial cables of the same lengths. Under certain configurations, when the Cu core of a coaxial cable is replaced with a MWCNT bundle of the same length, the measured delay time of a pulsed signal is shortened. The difference between the delay time measured for a device with a Cu core and that of a device with a MWCNT bundle of the same length increases with the length of the samples. The results imply that, compared with Cu wires, MWCNT bundles may be more efficient in guiding the transmission of high‐frequency signals along their longitudinal axis, showing a waveguide‐like effect.     

An Application of Conformal Mapping to the Determination of the Characteristic Impedance of a Class of Coaxial Systems (Letters)

Numerical results for the characteristic impedance of the coaxial system consisting of a regular polygon concentric with a circle are presented. In the case of a square concentric with a circle the results are in excellent agreement with those obtained by Riblet.     

Variable sensitivity photodetector for optical neural networks

A novel type of photodetector called a variable sensitivity photodetector (VSPD) has been developed for an optical implementation of a neural network. The function of the VSPD is a photodetector with functions of both a spatial light modulator and a photodetector. The VSPD with a metal-semiconductor-metal structure is shown to be suitable for the implementation of the analog synaptic weight with a bipolar value. A two-dimensional 8×8 array of VSPDs was fabricated on a GaAs substrate and integrated with a light-emitting-diode array with eight lines in hybrid form. This chip can simulate an eight-neuron system with 64 variable synaptic connections. The application to pattern classification was demonstrated by using the chip. The chip was used to classify 12 patterns into three categories by the backpropagation learning algorithm in a three-layered network. The authors studied how the nonlinear and nonuniform characteristics of the VSPD array device affect the learning performance     

Frequency Tunable Microstrip Patch Antenna Using RF MEMS Technology

A novel reconfigurable microstrip patch antenna is presented that is monolithically integrated with RF microelectromechanical systems (MEMS) capacitors for tuning the resonant frequency. Reconfigurability of the operating frequency of the microstrip patch antenna is achieved by loading it with a coplanar waveguide (CPW) stub on which variable MEMS capacitors are placed periodically. MEMS capacitors are implemented with surface micromachining technology, where a 1-mum thick aluminum structural layer is placed on a glass substrate with a capacitive gap of 1.5 mum. MEMS capacitors are electrostatically actuated with a low tuning voltage in the range of 0-11.9 V. The antenna resonant frequency can continuously be shifted from 16.05 GHz down to 15.75 GHz as the actuation voltage is increased from 0 to 11.9 V. These measurement results are in good agreement with the simulation results obtained with Ansoft HFSS. The radiation pattern is not affected from the bias voltage. This is the first monolithic frequency tunable microstrip patch antenna where a CPW stub loaded with MEMS capacitors is used as a variable load operating at low dc voltages     

Nanoelectrode lithography using a flat mold with a pattern defined by different conductivities

Nanoelectrode lithography is a pattern duplication method that combines nanoimprint with an electrochemical reaction. The method can form an oxide pattern directly on a semiconductor or metal. This method can use flat molds with patterns defined by substances with different conductivities, while the conventional nanoimprint technique must use a mold with a relief pattern. In this paper, the mold pattern for the technique is defined with an oxide material on the surface of a conductive substrate. Nanoelectrode lithography itself can be used to form a flat mold by using a conductive mold with a relief pattern, which leaves an oxide pattern via the anodic oxidation of Si. AFM lithography also can utilize an electrochemical reaction in the air to generate an oxide pattern on a conductive substrate, which gives us a flat mold. This paper shows that both types of flat mold can transfer a pattern to a target substrate. These strategies will allow us to realize on-demand mold fabrication, mold modification, and an easy way of obtaining a mold with a finer pattern.     

Approximation of a Direction of Nd in Bounded Coordinates

In this paper, we address the following problem: a direction in R ^d is given by a vector with large integral coordinates and we have to find a vector with bounded integral coordinates which realizes a good approximation of this direction. We present a short algorithm that efficiently computes an optimal approximation with respect to the distance to the direction. We then compare experimental results with those of a straightforward rounding algorithm with respect to the distance to the direction and to the angle with it.