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1.
Z.H. Zhu  M.J. Sha  M.K. Lei   《Thin solid films》2008,516(15):5075-5078
1 mol%Er3+–10 mol%Yb3+ codoped Al2O3 thin films have been prepared on thermally oxidized SiO2/Si(110) substrates by a dip-coating process in the non-aqueous sol–gel method from the hydrolysis of aluminum isopropoxide [Al(OC3H7)3] under isopropanol environment. Addition of N,N-dimethylformamide (DMF) as a drying control chemical additive (DCCA) into the sol suppresses formation of the cracks in the Er3+–Yb3+ codoped Al2O3 thin films when the rare-earth ion is doped with a high doping concentration. Homogeneous, smooth and crack-free Er3+–Yb3+ codoped Al2O3 thin films form at the conditions by a molar ratio of 1:1 for DMF:Al(OC3H7)3. A strong photoluminescence spectrum with a broadband extending from 1.400 to 1.700 µm centered at 1.533 µm is obtained for the Er3+–Yb3+ codoped Al2O3 thin films, which is unrelated to the addition of DMF. Controllable formation of the Er3+–Yb3+ codoped Al2O3 thin films may be explained by the fact that the DMF assisted the deprotonation process of Al–OH at the surfaces of gel particles, resulting in enhancement of the degree of polymerization of sols and improvement of the mechanical properties of gel thin films.  相似文献   

2.
New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn2In2O5 films with a resistivity of 3.9 × 10−4 Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In2O3 (50 mol.%) by r.f. magnetron sputtering. MgIn2O4---Zn2In2O5 films were prepared using MgIn2O4 targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10−3 to 3.9 × 10−4 Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn2O4 film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn2In2O5 films was more stable than either the undoped MgIn2O4, ZnO or In2O3 films in oxidizing environments at high temperatures.  相似文献   

3.
Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina (Al2O3) thin films on silicon (Si) crystals using N2 bubbled tri-methyl aluminum [Al(CH3)3, TMA] and molecular oxygen (O2) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600 °C. The maximum deposition rate was 18 nm min−1 at a catalyzer temperature of 1000 °C and substrate temperature of 800 °C. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited at a substrate temperature of 400 °C. The capacitance measurements resulted in a relative dielectric constant of 7.4, fixed charge density of 1.74×1012 cm−2, small hysteresis voltage of 0.12 V, and very few interface trapping charges. The leakage current was 5.01×10−7 A cm−2 at a gate bias of 1 V.  相似文献   

4.
Green fluorescence has been obtained under continuous laser excitation in the 780–860 nm range in GdAlO3:Er3+. With the help of the Judd-Ofelt treatment we built a model based on population rate equations to describe its time evolution. We found the intensity parameters to be Ω2 = 2.045 × 10−20 cm2, Ω4 = 1.356 × 10−20 cm2 Ω6 = 1. 125 × 10−20 cm2. Even if a two-photon absorption and a looping mechanism are necessary to well describe the dynamics, the main process responsible for up-conversion is energy transfer between erbium ions.  相似文献   

5.
Dense TiC–Al2O3–Al composite was prepared with Al, C and TiO2 powders by means of electric field-activated combustion synthesis and infiltration of the molten metal (here Al) into the synthesized TiC–Al2O3 ceramic. An external electric field can effectively improve the adiabatic combustion temperature of the reactive system and overcome the thermodynamic limitation of reaction with x < 10 mol. Thereby, it can induce a self-sustaining combustion synthesis process. During the formation of Al2O3–TiC–Al composite, Al is molten first, and reacted with TiO2 to form Al2O3, followed by the formation of TiC through the reaction between the displaced Ti and C. Highly dense TiC–Al2O3–Al with relative density of up to 92.5% was directly fabricated with the application of a 14 mol excess Al content and a 25 V cm−1 field strength, in which TiC and Al2O3 particles possess fine-structured sizes of 0.2–1.0 μm, with uniform distribution in metal Al. The hardness, bending strength and fracture toughness of the synthesized TiC–Al2O3–Al composite are 56.5 GPa, 531 MPa and 10.96 MPa m1/2, respectively.  相似文献   

6.
Bi2Ti2O7 thin films have been grown directly on n-type GaAs (1 0 0) by the chemical solution decomposition technique. X-ray diffraction analysis shows that the Bi2Ti2O7 thin films are polycrystalline. The optical properties of the thin films are investigated using infrared spectroscopic ellipsometry (3.0–12.5 μm). By fitting the measured ellipsometric parameter (Ψ and Δ) data with a three-phase model (air/Bi2Ti2O7/GaAs), and Lorentz–Drude dispersion relation, the optical constants and thickness of the thin films have been obtained simultaneously. The refractive index and extinction coefficient increase with increasing wavelength. The fitted plasma frequency ωp is 1.64×1014 Hz, and the electron collision frequency γ is 1.05×1014 Hz, and it states that the electron average scattering time is 0.95×10−14 s. The absorption coefficient variation with respect to increasing wavelength has been obtained.  相似文献   

7.
The C40 Mo(Si0.75Al0.25)2/Al2O3 composites were prepared by spark plasma sintering (SPS) of mechanically alloyed (MA) powders. The Mo(Si0.75Al0.25)2/0–20 vol.% Al2O3 materials, showing micron and submicron composite structure, possess a hardness of 13.9–14.6 GPa but a poor toughness of 1.78–1.80 MPa m1/2. The addition of 30 vol.% Al2O3 leads to the formation of the micron C40 Mo(Si0.75Al0.25)2/Al2O3 composite with an intergranular distribution of Al2O3, that results in a drop of the hardness to 10.2 GPa and an improvement of the toughness to 3.67 MPa m1/2. The transition of the cleavage facets to the intergranular fracture with the addition of Al2O3 is assumed as the main toughening mechanism.  相似文献   

8.
F. Iova  Ath. Trutia   《Optical Materials》2000,13(4):455-458
Diffuse-reflectance spectra of the NiO–Al2O3 systems in the 350–800 nm spectral domain are analysed. Two types of Ni2+complexes in γ-Al2O3 have been found at low concentrations (<5%): [Ni2+6O2−] and [Ni2+4O2−] with octahedral (Oh) and tetrahedral (Td) symmetries, respectively. Coexistence of these two complexes is discussed in connection with the sample preparation and their thermal treatment.  相似文献   

9.
Appreciable excited-state absorption (ESA) in U2+:CaF2 and Co2+:ZnSe saturable absorbers was measured at λ=1.573 μm by optical transmission versus light fluence curves of 30–40 ns long pulses. The ground- and excited-state absorption cross-sections obtained were (9.15±0.3)×10−20 and (3.6±0.2)×10−20 cm2, respectively, for U2+:CaF2, and (57±4)×10−20 and (12.5±1)×10−20 cm2 for Co2+:ZnSe. Thus, ESA is not negligible in U2+:CaF2 and Co2+:ZnSe, as previously estimated.  相似文献   

10.
雪金海  吴蒙华 《材料保护》2011,(10):65-67,9
热处理可显著提高镀层的硬度和耐磨性能。采用化学镀的方法在45钢表面制备了Ni-P-纳米A12O3复合镀层,并以不同温度对其热处理,研究了镀层热处理前后的物相、硬度和耐磨性能。结果表明:400℃热处理后,Ni-P-A12O3复合镀层达到稳态,稳定相是Ni+Ni3P+NiO+A12O3;镀层的显微硬度随热处理温度的升高而先...  相似文献   

11.
The kinetic parameters such as crystallization activation energy, E, and the frequency factor, ν, of Li2O–Al2O3–SiO2 glass were determined by a new non-isothermal method. The method is described by the equation , where β is the heating rate and Tf is the inflection-point temperature of differential thermal analysis (DTA). The value of Tf is determined as the maximum peak temperature on derivative differential thermal analysis (DDTA) curves. Values of E and ν of Li2O–Al2O3–SiO2 glass were also determined by two existing non-isothermal methods, namely the Kissinger plot and the Ozawa plot, and compared with those determined by isothermal method. Values of E and ν determined by the proposed equation were 332 kJ/mol and 1.4×1013 s−1, respectively. They are excellent agreement with the isothermal analysis results, 336 kJ/mol and 1.8×1013 s−1, respectively. In contrast, both the Kissinger equation and the Ozawa equation give much higher values of E and ν.  相似文献   

12.
We report measurements of the energy transfer between Er3+ and Ce3+ in Y2O3. The transition between the Er3+ 4I11/2 and 4I13/2 excited states can be stimulated by energy transfer to Ce3+, augmenting the population in the 4I13/2 state at the expense of that in the 4I11/2 state. Experiments were performed on Y2O3 planar waveguides doped with 0.2 at.% erbium and 0–0.42 at.% cerium by ion implantation. From measurements of Er3+ decay rates as a function of cerium concentration we derive an energy transfer rate constant of 1.3×10−18 cm3/s. The efficiency of the energy transfer amounts to 0.47 at 0.42 at.% cerium. The energy transfer rate constant measured in Y2O3 is two times smaller for Er3+→Ce3+ than that for Er3+→Eu3+ in the same material.  相似文献   

13.
Thin films of the system xAl2O3–(100 − x)Ta2O5–1Er2O3 were prepared by a sol–gel method and a dip-coating technique. The influences of the composition and the crystallization of the films on Er3+ optical properties were investigated. Results of X-ray diffraction indicated that the crystallization temperature of Ta2O5 increased from 800 to 1000 °C with increased values of x. In crystallized films, the intensities of the visible fluorescence and upconversion fluorescence tend to decrease with an increase in x values, due to the high phonon energy of Al2O3; the strongest fluorescence is observed in a crystallized film for x = 4 heat treated at 1000 °C. In amorphous films obtained by heat treatment at relatively low temperatures the Er3+ fluorescence could not be observed because strong fluorescence from organic residues remaining in the films thoroughly covered the Er3+ fluorescence. On the other hand, the Er3+ upconversion fluorescence in the amorphous films was observed to be stronger than that in the crystallized films. The strongest upconversion fluorescence is observed in an amorphous film for x = 75 heat treated at 800 °C.  相似文献   

14.
In this study, fabrication and characterization of zinc-based metal matrix nanocomposite reinforced by Al2O3 particles was investigated. Aluminum and zinc oxide powder mixture was milled in a planetary ball mill in order to produce Zn/Al2O3 nanocomposite. The structural evaluation milled and annealed powders studied by X-ray diffraction, SEM observation and hardness measurement. The zinc crystallite size estimated with broadening of XRD peaks by Williamson-Hall formula. The zinc oxide was found to react with Al through a rapid self-sustaining combustion reaction process. As a result a zinc matrix composite reinforced by Al2O3 particulate was formed. The microhardness value of produced nanocomposite powder was about 350 HV which was 10–15 times higher than the microhardness of pure zinc (20–30 HV).  相似文献   

15.
Large plates and discs of X38CrMoV5-1/Al2O3 metal matrix composites (MMCs) were produced via Ti-activated pressureless melt infiltration. After machining the plates were characterised using non-destructive testing methods (X-ray and ultrasonic C-scans) in order to investigate the quality of infiltration before preparing bars for four-point-bending tests. Subsequently, parts of the plates were used for machining tests, including sawing, welding and spark erosion. Furthermore, MMC discs were prepared for wear tests. The as-infiltrated MMC discs show a low wear rate of 1.6 × 10−10–2.2 × 10−10 m/s, which is 2–3 times better than the hardened steel itself, or 12–17 times better compared to X38CrMoV5-1 in the annealed state. As a first component a wire-drawing die was fabricated and successfully tested for drawing Al alloy AA6082 and steel 16MnCr5.  相似文献   

16.
Lead barium niobate is a new photorefractive material of high interest for a variety of applications including holographic storage. Pb0.5Ba0.5Nb2O6 crystals have been grown by the Bridgman method, and the effects of heat treatments on their photorefractive properties were investigated using Ar ion laser at λ=514.5 nm. The color and absorption spectrum of the crystals varied depending on the oxygen partial pressure during heat treatment. The oxygen diffusivity was estimated to be in the order of 10−6 and 10−5 cm2/h at 425 and 550 °C, respectively. Reduction treatment at an oxygen pressure of 215 mTorr increased the effective density of photorefractive charges about three times from 8.0×1015 to 2.2×1016 cm−3 and made the charge transport more electron-dominant. As a result, the maximum gain coefficient improved from 5.5 to 13.8 cm−1. A diffraction efficiency as high as 70% was achieved in a reduced crystal.  相似文献   

17.
This study reports a new, simple and effective pre-calcined method for fabrication BaO–TiO2–B2O3–SiO2 low temperature co-fired ceramics (LTCC) at a sintering temperature below 900 °C, and with dielectric losses (tan δ) lower than 2 × 10−3. The research results have shown that the addition of 2–5 wt% Al2O3 could easily eliminate the porosity of the glass-ceramics because of the excellent wetting behavior between alumina and the BaO–B2O3–SiO2 glass liquid phase in the low temperature co-fired ceramic system.  相似文献   

18.
Ti–6Al–4V (Ti64) sheet specimens were cathodically hydrogenated in sulfuric acid solution at ambient conditions. The hydrogenated specimens were then sent to go through the designed thermohydrogen processing (THP) twice to obtain a nano-sized grain structure. The average grain size of resulted microstructure was found to be 10–20 nm obtained by TEM. Qualitative and quantitative analyses performed by employing X-ray diffractometry (XRD) and elemental analysis (EA) showed that the addition of As2O3 as hydrogenation promoter in electrolyte significantly increased the hydrogen uptake. The high concentration of hydrogen arising from promoter action is the key factor in grain refinement. The optimal processing parameter found for grain-refining Ti64 was: (1) electrolytic hydrogenation at 100 mA cm−2 for 3 h in 1 N H2SO4(aq) by adding 0.1 g L−1 As2O3; (2) β transformation carried out at 850 °C for 1 h in air furnace, followed by a furnace cooling to 590 °C and held for 6 h; (3) oxide film removed and then dehydrogenated at 650 °C and 1.0 × 10−6 Torr for 10 h; (4) repeated the same processes once more.  相似文献   

19.
TiB2–Al2O3 composites with Ni–Mo as sintering aid have been fabricated by a hot-press technique at a lower temperature of 1530 °C for 1 h, and the mechanical properties and microstructure were investigated. The microstructure consists of dispersed Al2O3 particles in a fine-grained TiB2 matrix. The addition of Al2O3 increases the fracture toughness up to 6.02 MPa m1/2 at an amount of 40 vol.% Al2O3 and the flexural strength up to 913.86 MPa at an amount of 10 vol.% Al2O3. The improved flexural strength of the composites is a result of higher density than that of monolithic TiB2. The increase of fracture toughness is a result of crack bridging by the metal grains on the boundaries, and crack deflection by weak grain boundaries due to the bad wetting characters between Ni–Mo and Al2O3.  相似文献   

20.
Highly conducting and transparent indium tin oxide (ITO) thin films were prepared on SiO2 glass and silicon substrates by pulsed laser ablation (PLA) from a 90 wt.% In2O3-10 wt.% SnO2 sintered ceramic target. The growths of ITO films under different oxygen pressures (PO2) ranging from 1×10−4–5×10−2 Torr at low substrate temperatures (Ts) between room temperature (RT) and 200°C were investigated. The opto-electrical properties of the films were found to be strongly dependent on the PO2 during the film deposition. Under a PO2 of 1×10−2 Torr, ITO films with low resistivity of 5.35×10−4 and 1.75×10−4 Ω cm were obtained at RT (25°C) and 200°C, respectively. The films exhibited high carrier density and reasonably high Hall mobility at the optimal PO2 region of 1×10−2 to 1.5×10−2 Torr. Optical transmittance in excess of 87% in the visible region of the solar spectrum was displayed by the films deposited at Po2≥1×10−2 Torr and it was significantly reduced as the PO2 decreases.  相似文献   

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