基于光敏自组装多层膜的液晶光控取向膜

采用layer-by-layer(LBL)的方法，将基板依次在具有光敏双键的季铵盐水溶液和聚乙烯基苯磺酸钠水溶液中浸泡，石英基板表面形成了自组装多层沉积膜。经线性偏振紫外光辐照后，LBL多层膜表现出明显的紫外吸收各向异性。将两片带有各向异性薄膜的基板做成平行液晶器件。在正交的偏光显微镜下观察，发现取得均一、稳定的取向效果。该种光控取向膜有望用作LCoS微显示的取向层。     

表面自组装反应制备液晶光控取向膜

通过聚乙烯醇薄膜表面致密的羟基基团与肉桂酰氯间的选择性酯化反应,将光敏基团连接到聚乙烯醇薄膜表面,制备出一种新型的光敏自组装单层膜.用线性偏振紫外光辐照该薄膜,与光矢量方向匹配的肉桂酸基团发生光化学反应,反应产物沿辐照光的偏振方向分布,形成表面张力各向异性的薄膜.将该薄膜作为向列相液晶的取向膜制成平行液晶器件,在偏光显微镜下观察,发现获得了均一、稳定的取向效果.这种自组装光控取向膜的制作过程简单,且具有良好的热稳定性.     

一种新型液晶垂直取向膜

采用离子沉积法在玻璃基板表面制备了十四烷基磺酸盐自组装膜,用带有该自组装膜的基板制成的液晶器件呈现出垂直取向效果。通过自组装反应过程分析,认为自组装膜表面的纵向沟纹引起了液晶的垂直排列。实验发现,当自组装膜烷烃碳链长度大于11个C原子就可获得垂直取向。这种取向膜制作过程简单、热稳定性好,非常有望应用于多畴垂直取向模式的液晶显示器。     

自组装法制备新型液晶垂直取向膜

用硅烷偶联剂3-氨丙基-三乙氧基硅烷,通过自组装反应在石英基板表面制备了含有二苯乙炔基的自组装单层膜。用该自组装膜作为向列相液晶的取向层制成液晶器件,在偏光显微镜下观察,发现向列相液晶获得了均匀、稳定的垂直取向效果。热稳定性试验表明,用自组装方法制备的液晶垂直取向膜有良好的热稳定性,在250℃条件下取向仍可保持。     

极性自组装单层膜取向铁电液晶器件

采用极性自组装单层膜和摩擦的方法制备了非对称的液晶盒.在铁电液晶相变的过程中不施加电场,得到了排列均一的铁电液晶器件.实验表明:极性自组装单层膜极性越大器件的对比度越高.经过分析得出该器件液晶分子取向机理为:基板附近的铁电液晶通过偶极和极性自组装膜的作用,使得靠近自组装膜表面处的偶极和靠近摩擦表面的偶极的指向相同,通过分子的相互作用使得体内分子排列方向一致.     

一种基于自组装共价单层成膜方式的新型铁电液晶光控取向膜

提出了一种基于自组装技术的新型光敏材料作为FLC的取向层的新方案,它为在分子尺寸上研究和控制FLC与固态基板之间的相互作用提供了新的途径.光敏材料是通过共价键作用与基板相连接的.线性偏振紫外光的辐照后,即得到了光学各向异性的自组装膜;以该膜作为取向膜能够很好地取向FLC,且所制备的器件的静态对比度可以达到350.其效果已经可以与传统的摩擦聚酰亚胺类薄膜相媲美.     

光敏自组装单层膜用于液晶光控取向的研究

用丁二酸酐和7-羟基香豆素合成了含有脂肪族羧酸基团的光敏化合物，利用脱水反应使它在玻璃(或石英)基板表面形成自组装单层膜。用偏振紫外光照射光敏性自组装膜，与光矢量方向匹配的香豆素基团发生[2 2]周环反应，反应产物沿辐照光的偏振方向分布，形成表面张力各向异性的薄膜。用它作为向列相液晶取向膜制成平行液晶器件，在偏光显微镜下观察，发现取得了均一、稳定的取向效果。并且该取向膜有良好的热稳定性。     

双酚A双肉桂酸酯光控取向膜

利用双酚A双肉桂酸酯光敏单体在线偏振紫外光作用下发生光交联反应,制备了光控取向膜。制备过程更为简单,不需要高温热处理过程。液晶分子的排列方向与入射紫外光偏振方向垂直。通过紫外光谱和红外光谱分析了光化学反应过程,链聚合反应与异构反应相比,链状聚合反应对于液晶的排列起重要作用。利用偏振红外光谱对取向膜的有序度值计算发现,有序值较小。利用Cano盒测试了方位锚定能的大小为1.28×10-6J/m2。取向膜的热稳定性可以达到90℃。     

SnO2纳米薄膜的自组装制备及表征

利用自组装单层膜法,在单晶硅基底上生长有机硅烷单分子膜层,并在硅烷的功能性基团上,诱导生成二氧化锡纳米薄膜,通过XPS、AFM、SEM及XRD等手段对膜材料的表面形貌和结构进行了分析。结果表明:自组装单层法制备的SnO2薄膜为晶态膜,膜层致密、均一,厚度约为20 nm,结构为金红石结构。     

用线性偏振光聚合法制备LCD取向膜的研究

介绍用线性偏振光聚合法制备肉桂酸聚乙烯醇酯类液晶取向膜，用偏振红外光谱研究ＬＰＰ膜的各向异性和取向能力，以及其与光照时间的关系。并提出，用两片不同的ＬＰＰ取向膜能制备具有较在预倾角的液晶盒。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.