电子发射材料组成对Ba-W阴极性能的影响

利用TGA-DSC和XRD对阴极铝酸盐添加氧化钪(Sc2O3)前后的合成工艺、产物物相等进行了研究,对合成后铝酸盐与钨基的浸渍工艺、阴极的发射性能及蒸发速率进行了分析。结果表明:铝酸盐主晶相为Ba5CaAl4O12,添加w(Sc2O3)3%后,主晶相改变为Ba3CaAl2O7,熔点下降了48.5℃,铝酸盐的浸渍温度降低了130℃,浸渍度略有升高,保温时间缩短了0.5min。在阴极工作温度(1000～1100℃)范围之内,添加Sc2O3后制备的铝酸盐阴极直流发射密度是普通铝酸盐阴极的2倍以上;1100℃时平均蒸发速率是普通铝酸盐的61.5%,性能明显优于普通铝酸盐。     

空间行波管用低蒸散M型阴极的蒸发性能与寿命特性

针对空间行波管等真空电子器件使用寿命受限于阴极电子源的问题，制备了低蒸散型覆膜扩散阴极(M型阴极)，对其蒸发性能、发射性能及寿命特性展开研究。采用贝克法测量阴极初始状态及经过不同寿命时长后的蒸发速率，在水冷阳极中进行了阴极发射性能的测试，随后比较了低蒸散M型阴极与常规M型阴极的性能差异。在专用测试系统中，以行波管电子枪漂移管为载体，对阴极的寿命特性进行测试与分析。研究结果表明，在1 050℃_B和1 100℃_B时，低蒸散M型阴极的蒸发速率与常规M型阴极相比分别降低了89.7%和84.8%，同时发射性能满足器件应用要求。寿命实验结果显示，在行波管电子枪短管中，实验阴极在980℃_B～1 140℃_B范围内，直流支取1.2 A/cm²的条件下，稳定工作10 000 h以上。阴极工作温度低于1041.5℃_B时预估寿命即可超过20年。     

插拔式单晶LaB6阴极制备与应用

插拔式单晶LaB₆阴极是我国电子束类高端仪器及设备必需的关键元件和发展的主要瓶颈。本文围绕插拔式单晶LaB₆,开展了单晶精密加工、高效加热、机械夹持等制备工艺研究,并对阴极的发射性能、静态寿命等进行了测试,还开展了阴极在多个领域的应用研究。研究结果表明,所制备的阴极在电子发射性能及工作寿命方面均达到与进口阴极相当的水平,可应用于增材制造、扫描电镜、高分辨率CT等领域。     

Cu掺杂Ca3Co4O9+δ中温固体氧化物燃料电池阴极材料

采用固相法制备了Ca₃Co_4-xCu_xO_9+δ(x=0,0.1,0.3,0.5)阴极材料,研究了Cu离子掺杂对材料的物相组成、电极微观形貌、电化学性能、热膨胀系数、电导率及单电池输出性能的影响。结果表明：在900℃的煅烧合成温度下,未掺杂与Cu掺杂量为x=0.1的生成产物具有相同单一物相晶体结构(JCPDS 21-0139),Cu掺杂使晶胞参数略有增加。掺杂量为x=0.1的阴极膜层呈现出最疏松多孔状态,有利于氧气在阴极的扩散传输,相应的极化阻抗最小(700℃时极化阻抗为0.85Ω·cm²,为未掺杂的42.9%),可以高效地催化氧气在阴极处的还原反应,而且具有最高的电子电导率(相比未掺杂的提高了1.6倍),提升了阴极反应过程中的电荷转移效率。采用Ca₃Co_3.9Cu_0.1O_9+δ为阴极的单电池输出性能明显优于其他组分作为阴极时的性能(700℃时功率密度峰值约为79 mW·cm^-2     

磁控管用新型直热式稀土铪酸钆陶瓷阴极研究

为了提高大功率磁控管的输出功率,延长其使用寿命,采用难熔稀土氧化钆和过渡金属氧化铪制备大功率磁控管用新型直热式稀土铪酸钆陶瓷阴极,并对该阴极的热发射特性和寿命特性等进行了测试,热发射测试结果显示该阴极在1300℃ br即可提供0.1A/cm²发射电流密度,1600℃ br下可提供超过1.93A/cm²的发射电流密度.寿命实验结果显示,该阴极在1500℃ br,直流负载为0.5A/cm²的条件下,寿命已经超过4000h.最后,利用X射线衍射仪、扫描电镜、能谱分析仪、氩离子深度刻蚀俄歇电镜等设备分别对该阴极活性物质的分子结构,阴极表面微观形貌、元素成分及含量等进行了分析.结果表明,高温烧结合成了单一的铪酸钆物相,烧结过程中当一种Gd³⁺价稀土氧化钆掺入Hf⁴⁺价的过渡金属氧化铪时,会发生离子置换固溶,为了保持铪酸钆晶格的电中性,晶格中就会产生一个氧空位.当阴极在激活、老练、热发射测试时,会加速氧空位的生成,产生的氧空位越多,阴极表面导电性就会越好,这间接降低了逸出功,从而提高了阴极的热发射能力.     

铝酸盐结构对阴极性能影响的初步探讨

用XRD技术对浸渍Ba-W阴极所用的铝酸盐(6BaO:CaO:2Al2O3)结构进行了分析。结果表明俄罗斯和国内某单位的铝酸盐峰位较复杂,结构不单一。该文作者用新的配方,新的烧结方式生成了主峰为Ba5CaAl4O12的结构单一的铝酸盐,且烧结温度比传统烧结温度低200℃,单一结构的铝酸盐具有浸渍温度低、发射较好、性能稳定、蒸发少等特点,从而可望改善Ba-W阴极的性能。     

铈钨阴极表面铈浓度的研究

采用铈钨材料作阴极比纯钨阴极灯的寿命要高得多。因为铈的逸出功比钨低得多,相应就降低了脉冲氙灯阴极发射点的温度。在氙灯放电过程中,阴极电子发射基本上是一个热过程,正离子流对阴极的轰击形成高温阴极斑点,成为电子的发射中心。灯内阴极表面由于和放电沟道中等离子体相接触而处于高温状态,阴极表面活性物质不断蒸发导致表面浓度下降,而阴极表面活性物质的浓度对电子发射是至关重要的。若活性物质浓度得不到及时补充,阴极发射性能势必下降。     

浸渍型钨酸钡锶阴极的实验

本文提出了用做阴极活性物质的钨酸钡锶的制造新工艺——湿氢活性烧结法;采用一次浸渍成型制造阴极的工艺流程;对阴极制造的关键工序(浸渍烧结)做了较深入的探讨。现在已能较稳定的制出1000℃亮度温度具有直流偏离点电流大于8安培/厘米~2发射水平的阴极。在阴极温度900℃亮度温度时,支取直流发射2安培/厘米~2的阴极寿命试验持续了3000小时以上。但大电流密度下的寿命试验结果不佳,有待进一步探讨。     

钪酸盐阴极的研制及应用

本文介绍了大电流密度钪酸盐阴极的制造工艺。采取共沉淀法,解决了关键工艺—S_(c2)O_3溶于酸的问题。此工艺制备简便、稳定、性能良好。直流发射1000℃大于10安/厘米~2;直流温度补偿数据900℃大于10安/厘米~2;脉冲发射在 f=100周/秒,τ=50微秒时,1000℃大于48.5安/厘米~2,二次发射σ=3.5,活性物质蒸发1000℃时1.2×10~(-10)克/厘米~2秒。     

钪钨基体钡钨热阴极发射性能研究

为获得电子发射性能优异的含钪钡热钨阴极,采用液固掺杂、掺杂钨粉还原、等静压制、高温烧结、浸渍发射物质等工艺,制备出钪钨基体钡钨热阴极。对该阴极的发射性能测试结果显示,在阴极温度分别为950℃、1050℃、1100℃时,脉冲发射电流密度分别为53.6A/cm2、65.7A/cm2、79A/cm2。分析认为,由于氧化钪均匀地覆盖在钨颗粒的表面,氧化钪与钨接触面增多,使氧化钪与钨的结合力增大,因此该阴极具有均匀性良好的热电子发射,较好的抗离子轰击能力。     

A Study of Scandia-Doped Pressed Cathodes

Scandia (Sc)-doped pressed cathodes were prepared by different methods, including mixing of scandium oxide and barium-calcium aluminates with tungsten by manual mechanical mixing, high-energy ball-milling, and liquid-liquid doping. The surface behavior of the active substance, microstructure, and emission properties of the cathodes has been studied by auger electron spectroscopy, scanning electron microscope, and an emission test apparatus. Results show that the cathodes prepared by the liquid-liquid doping method have a fine microstructure. This kind of cathode has a submicrometer semispherical tungsten grain structure with homogeneous distribution of Sc and barium-calcium aluminates which are dispersed over and among tungsten grains. The cathodes prepared by the liquid-liquid doping method exhibited good emission properties, e.g., the current density of this cathode reached 46 A/cm² at 850 ^degCb.     

Development of High Current-Density Cathodes With Scandia-Doped Tungsten Powders

The development of high current-density cathodes employing scandia-doped tungsten powders is reviewed in this paper. A matrix with a submicrometer microstructure characterized by uniformly distributed nanometer particles of scandia is believed to play a dominant role in the improved emission capability of these cathodes. Space-charge-limited current densities of over 30 A/cm² at 850 degC_b have been repeatedly obtained for many runs of cathodes fabricated from the different batches of scandia-doped tungsten powders. A lifetime of over 10000 h at 950-degC_b 2-A/cm² dc loading in a test diode has been achieved. Periodic high current-density pulse testing was also carried out during the test. The performance for both the dc and pulsed current densities remained stable. When tested at Stanford Linear Accelerator Center in a cathode life test vehicle with a Pierce gun configuration, the cathode operated for 500 h at 1170 degC _b, with a pulsed loading of 100 A/cm² and with less than 5% degradation in current density. The outstanding performance of these cathodes is attributed to a surface multilayer of Ba-Sc-O of about 100-nm thickness that uniformly covers the W grains with nanometer-size particles distributed on the growth steps. The layer is formed after proper activation by diffusion of free or ionic Sc together with Ba and O from the interior of the cathode to its surface. This highly mobile, free, or ionic Sc is liberated from constituents produced during impregnation and activation by reactions between the matrix materials and impregnants     

Diamond grit-based field emission cathodes

This letter describes the fabrication and operation of diamond grit gated cathodes. The structure is similar to Spindt-type cathode, but the field emission cone is replaced with a more planar diamond grit layer 50 to 200 nm thick. Although the minimum lithographic dimension of these cathodes is from 1 to 5 μm, these devices have exceptionally low turn-on voltages, 5 to 7 V. Cathode current noise is less than 2.5% rms with a maximum absolute current variation of 6.7% over a 6 h period. These devices can operate in pressures of nitrogen above 133 Pa (1 Torr). Although operation in 6.6×10^-2 Pa (5×10 ^-4 Torr) with more reactive gasses, O₂ or H₂ S, degrades performance, the cathodes recover when the pressure is reduced to ⩽1.3×10^-4 Pa (1×10^-6 Torr). Gate current varies from 0.2 to 100 times the emitted current and depends on the technique used to deposit the diamond grit. High current densities (>10 A cm^-2), low gate voltages (<50 V), low emission noise, excellent longevity, temporal uniformity, and ease of fabrication make these devices potential cathodes for flat panel displays. However, excessive gate current and unsatisfactory processing reproducibility at present limit their general application     

Diamond cold cathode

Diamond cold cathodes have been formed by fabricating mesa-etched diodes using carbon ion implantation into p-type diamond substrates. When these diodes are forward biased, current is emitted into vacuum. The cathode efficiency (emitted current divided by diode current) varies from 2×10^-4 to 1×10^-10 and increases with the addition of 10^-2-torr partial pressure of O₂ into the vacuum system. Current densities of 0.1 to 1 A-cm^-2 are estimated for a diode current of 10 mA. This compares favorably with Si cold cathodes (not coated with Cs), which have efficiencies of ~2×10^-5 and current densities of ~2×10^-2 A-cm^-2. It is believed that higher current densities and efficiencies can be obtained with more efficient cathode designs and an ultrahigh-vacuum environment     

飞行时间质谱法研究新型氧化物阴极的蒸发

阴极的蒸发是评价阴极性能的一个重要指标，它直接关系到微波管的稳定性和寿命。采用飞行时间质谱法 (ToFMS)，分析气-液相合成碳酸盐制备贮存式氧化物阴极在分解、激活过程中及激活后的蒸发物。结果表明：新型碳酸盐阴极纯净无杂质，在常规分解工艺过程中能够充分分解和激活；激活时阴极涂层内产生盈余Ba，此时检测到Ba 的蒸发；在微波管最高工作温度时没有检测到活性物质，不会因为Ba 蒸发过快而造成阴极寿命和发射电流快速降低。     

冷冻干燥法制取扩散阴极含钪活性物质

借助液相合成法中的冷冻干燥法,制备出了高发射扩散阴极所需的含钪多元金属氧化物活性物质,其中Ba与Sc的原子比接近2∶1。应用该活性物质的浸渍阴极,取得了超过500 A/cm;的二极管脉冲发射电流密度和218.5 A/cm;的电子枪脉冲发射电流密度。在二极管直流测试条件(950°C,10 A/cm;)下,阴极的寿命测试进行了10500 h后仍未出现发射电流下降的现象;而在电子枪中的大工作比(5%)脉冲测试条件下,阴极在工作了2010 h后仍维持了超过50 A/cm;的较大发射电流密度。冷冻干燥法有效解决了传统固相合成方法在机械式破碎、研磨和混合等工序中存在的原料混合不可控、成分分布不均匀等问题,能够缩短工艺流程、节约工艺设备,有着良好的生产推广价值。     

亚微米结构新型含钪扩散阴极性能的研究

本文研究具有氧化钪掺杂钨基体钪酸盐阴极的性能.为了改进氧化钪的分布均匀性及提高阴极表面钪的扩散补充能力,分别采用液固掺杂和液液掺杂的方法制备了Sc2O3掺杂W粉基材,研究了利用这种钨粉制作多孔钨基体的工艺技术和多孔体的微观结构.研究表明在改进压制、烧结技术的基础上,可以获得具有适当孔度的亚微米结构多孔基体,氧化钪在基体中的分布得到进一步改善,在这种基体中铝酸盐的浸渍率可以达到常规浸渍阴极的要求.发射试验结果表明,这种阴极在850 ℃的工作温度下空间电荷限制的电流密度超过30 A/cm2,在超过2000 h的寿命实验过程中发射仍持续上升,因而在要求高电流密度和一定寿命的微波电子管中具有光明的应用前景.研究还证实多孔体的结构越趋细微,越有利于阴极的发射均匀性和耐离子轰击的性能改善.