基于连通矩形谐振环结构的双波段左手材料吸波器

提出了一种工作于电磁波平行入射情况下的双波段连通矩形谐振环结构单元左手材料吸波器,充分利用电磁超材料的强谐振损耗性质,通过合理设计左手材料的电磁参数,并利用 CST 对其进行结构进行仿真优化,设计出具有较佳吸波效果的吸波器,使其中两个吸收峰位于以 5.41GHz、7.11GHz频段,且吸收率高于同频段的传统碳膜材料吸波器。制备了双波段连通矩形谐振环结构单元左手材料吸波器,并测量其传输特性。实验结果表明,实验与仿真结果一致。该吸波器可作为微波电路的衰减器,取代传统吸波器结构。     

基于石墨烯超材料的宽频带可调太赫兹吸波体

基于二维材料石墨烯,设计了一款宽频带可调谐超材料太赫兹吸波体。该吸波体由三层结构组成,顶层为石墨烯超材料,中间层为二氧化硅,底层为金属薄膜。仿真结果表明,当石墨烯的费米能级为0.7 eV时,该吸波体在1.11~2.61 THz频率范围内吸收率超过90%,相对吸收带宽为80.6%。当石墨烯的费米能级从0 eV增大到0.7 eV时,该吸波体器件的峰值吸收率可以从20.32%增大到98.56%。此外,该吸波体器件还具有极化不敏感和广角吸收的特性。因此,它在太赫兹波段的热成像、热探测、隐身技术等领域具有潜在的应用价值。     

基于电流变液的宽带可调超材料吸波体设计

为将超材料吸波体更好地应用于生产生活中,文中设计了一种基于电流变液的宽带可调超材料吸波体。通过在超材料吸波体中加载电阻器和介电常数电可调的电流变液实现宽带吸收和吸收频带可调。仿真结果表明,吸波体在8.296~15.128 GHz之间的吸收率超过了80%,在11.5~15 GHz之间的吸收率超过了90%,实现了电磁波的宽带吸收。随着电流变液外加电场强度的增加,其吸收频带逐渐往低频发生移动,实现了吸收频带的调控。此外,仿真证实,由于吸波体结构单元具有旋转对称性,其吸收特性具有极化无关性。     

基于改进粒子群优化算法的宽角度高吸收率超材料吸波体设计

超材料吸波体的性能受电磁波入射角度的影响,具有宽角度稳定性的吸波体一直是吸波体设计的难点之一。传统设计方式依赖于人工设计和优化,存在设计困难且周期长的缺陷。针对设计目标的特点,基于改进粒子群优化算法设计了宽角度高吸收率超材料吸波体。通过添加动态权值和高斯误差解决二进制粒子群优化算法后期局部搜索能力弱的问题,用改进的二进制粒子群优化算法优化吸波体表层0、1编码的离散金属块结构实现高吸收率和宽入射角吸收特性。仿真结果表明,设计的超材料吸波体在9.4～13.3 GHz频段的吸收率大于90%,在11.6～12.6 GHz频段内可实现完美吸收（吸收率大于99%）,横电、横磁极化波60°斜入射情况下超材料吸波体在带宽内的吸收率大于80%。该设计方法有效弥补了传统设计方法的缺陷,展现出按需设计和设计过程无需人为干预的独特优势,在相关领域具有广泛的应用前景。     

一种基于多层电阻膜的超宽带超材料吸波体

本文提出了一种基于多层电阻膜的超带宽超材料吸波体的设计模型.该吸波体的结构单元由一种环形电阻膜片在含导体底面的平面分层介质基板上多层叠加而成,各层电阻膜片的外形相同,但表面阻值不同.一件四层吸波体的仿真分析结果表明:该吸波体对6.8GHz~59.6GHz频段之间的垂直入射波吸波率均大于90%;同时对入射角为45度的TE和TM斜入射波仍能保持超宽带吸波,具有极化不敏感和宽入射角特性.另外,对不同层次吸波体的分析表明:随着电阻膜片层次的增加,其吸波效果更好,吸波频带变宽,带内吸波效果更稳定.     

基于 VO2的温控可调谐极化无关超材料吸波体设计

基于二氧化钒（VO2）薄膜的绝缘-金属相变特性,提出了一种温控可调谐的极化无关超材料吸波体,研究了单环、双环和三环结构超材料吸波体对电磁波的吸收特性和温控可调谐特性。当电磁波垂直入射时,单环、双环和三环结构超材料吸波体在 2~20 GHz 范围内分别出现了 1 个、2 个和 3 个吸收峰,随着结构单元环数增加,吸收峰逐步增加;由于超材料吸波体是二维全向对称的,故其吸收特性是电磁波极化无关的;当温度从 40 ℃ 至 80 ℃变化时, 吸收特性发生明显的变化,实现了极化无关超材料吸波体的可调谐效果。     

一种基于超材料的六频带吸波体设计

本文设计了一种基于电磁超材料的具有多个频带吸波特性的吸波体。该吸波体的主体是由三层结构组成,上层为6个金属方框相套组成,中层为超材料有耗介质,下层的金属铜板作为金属背板。这种结构可以实现在6个频点处的窄带吸波,其中在2. 5GHz处只能达到64%的吸波率,而在其他五个频点都能达到90%以上的吸波率。此外由于该结构具有旋转对称性,因而具有极化不敏感特性,又经由仿真得到该结构具有宽入射角特性,结果表明该超材料吸波体在雷达隐身领域具有潜在应用价值。     

影响低发射率涂层与超材料吸波体兼容的关键因素探究

为了实现8~14μm波段低反射率涂层与超材料吸波体的兼容隐身,探究了影响低发射率涂层与超材料兼容性能的关键因素。采用IR-2型发射率测试仪测定涂层在8~14μm波段的发射率,用弓形法测量了超材料涂覆涂层前后的反射损耗曲线,并采用矢量网络分析仪测试了涂层电磁参数。结果表明,涂覆低发射率涂层后,可将超材料吸波体的红外发射率降至0.126,但是其对超材料吸波体原有吸波特性影响较大,平均反射损耗以及吸收带宽都有所减小。在涂层4个电磁参数中,介电常数实部为影响低发射率涂层与超材料兼容的关键因素,低发射率涂层的介电常数实部较高,导致本征阻抗较小,与自由空间的阻抗不匹配,对雷达波的反射较多,涂覆后对超材料吸波体原有反射损耗特性影响大。     

太赫兹波超材料吸波体的特性分析

超材料吸波体通常是由一些在介质基底表面上周期分布的亚波长开口环谐振器（SRRs）组成,它们的吸收率在很大程度上取决于顶层SRRs的结构细节及介质的材料性质。利用时域有限积分法（FITD）对太赫兹波的超材料吸波体进行传输特性研究,分析了PI介质厚度、单元尺寸、开口环谐振器宽度、顶层silicon的电导率和PI介质的介电常数对太赫兹波超材料吸波体吸收峰位置和吸收率大小的影响。此超材料吸波体的特性研究对太赫兹波调制器、滤波器、吸收器及偏振器等器件设计和制备具有一定的指导意义。     

基于电阻膜的超宽带超材料吸波体设计

为满足宽带电磁隐身需求,提出了一种完全覆盖C～Ka波段、部分覆盖S和U波段的超材料吸波体. 吸波体由四层不同方块电阻的方形电阻膜及泡沫介质基板构成,多层电阻膜结构有效地向两侧拓宽了吸收带宽. 为了分析吸波体的电磁吸收机理,建立并分析了该吸波体的精确等效电路模型. 仿真结果表明,在3.16～51.6 GHz(相对带宽为176.9%)工作频带内,对TE和TM波均能实现88%以上的吸收率,并且对入射角度具有稳定性. 制作、加工并测试了超材料吸波体,实测结果与等效电路计算、全波仿真结果均具有较好的一致性,表明该吸波体在电磁隐身领域具有重要的应用价值.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.