ADI推基于IEC61850标准的IED系统解决方案

中国在智能电网这一领域的投入,已走在世界前列,这对电力相关的半导体厂商来说是一个良好的机遇。电力行业是ADI的传统强项,ADI于最近推出了其基于IEC61850的智能电子设备(IED)系统解决方案。IEC61850标准是在智能电网的通信标准化要求之下产生的,其传输介质以以太网为主,可实现跨平台     

基于IEC 61850标准的站用一体化电源IED信息建模方法研究

IEC 61850标准已经成为公认的变电站通信标准,而站用一体化电源在近年也在国内兴起。研究提出了基于IEC61850标准下的一体化电源智能电子设备IED的建模方法,阐述了提出的智能电子设备IED的建模方法和过程,介绍了此方法在江西宜春某变电站的一体化电源工程的应用实例,总结了一体化电源IED建模过程中需要注意的问题。     

基于IEC 61850标准的站用一体化电源IED建模

目前,IEC 61850标准已经成为公认的变电站通信标准,而站用一体化电源在近年也在国内兴起。为解决基于IEC 61850标准下的一体化电源智能电子设备IED的建模问题,本文首先阐述了智能电子设备IED的一般建模方法和过程,然后根据此方法,结合江西宜春某变电站的一体化电源工程实例,进行了一体化电源的IED建模。最后总结了一体化电源IED建模过程中需要注意的问题。     

IEC61850标准中ACSI映射实现研究

IEC 61850是下一代变电站的无缝通信标准,ACSI是IEC 61850规范的一套抽象通信服务接口,它的映射实现是IEC 61850应用的关键所在。针对IEC 61850具体应用中智能电子设备IED开发的目的,通过对ACSI与MMS（制造报文协议）技术特点的分析,构建ACSI映射实现的模型,设计ACSI到MMS映射实现的详细流程与方法,提出了ACSI实现框架三部分并与ACSI到XML的映射进行了比较。结果表明该研究为开发符合IEC 61850标准的变电站通信系统提供了技术依据。     

浅谈牵引变电所智能化装置的实现

介绍了IEC61850智能变电站,提出了智能牵引变电所IED装置的实现方案。     

电动汽车充电站功率控制策略的研究

电动汽车及充电站近年来得到了快速的发展。充电站在为电动汽车充电时将消耗巨大的电能,如果任由众多的充电站无序无限制地进行充电工作,将会对电网形成巨大的冲击,从而影响电网的稳定。从长远来看,将充电站纳入电网调度的体系,充电站根据电网调度值对站内充电机的充电功率实施控制与分配,从而降低大规模充电对电网的冲击,具有重要的意义。     

配电线路保护中IEC61850的实现

为实现配电自动化系统(DAS)中的信息共享和智能电子设备(IED)之间的互操作性能,在IEC61850标准的基础上,结合嵌入式技术,设计了新型的馈线自动化终端设备模型,并对其在DAS的应用做了一定的探讨.在对该设备各主要模块功能分析的基础上,将各模块功能分解为多个逻辑节点的组合,实现系统的功能建模和系统建模,搭建了IED的"ARM+DSP"双CPU结构硬件平台;在对IEC61850标准的信息分层、面向对象的数据对象统一建模、数据自描述和抽象通信服务接口(ACSI)及特定通信服务映射(SCSM)等概念分析的基础上,提出了基于以太网并符合IEC61850标准的lED通信模型.     

IEC61850标准在电能质量监测系统中的作用

工业领域对设备灵敏度要求逐步提高,使电能质量监测越来越重要.为克服专用监测设备结构复杂、投资高等问题,提出构建基于IEC61850标准的变电站自动化系统.通过构建电能质量监测系统模型,实现分布式电能质量测控功能,与传统系统对比,论述分布式系统优势,采用简单网络管理协议SNTP使时间同步精度在1微妙以内.     

变压器智能风冷控制技术研究及设备研制

本文对变压器智能风冷控制系统进行研究,介绍了智能变电站环境下的变压器智能风冷控制系统的构成及配置,从基于IEC61850的数据传输及通信建模方式、控制IED运行方式、控制IED的控制执行几个方面说明了其工作原理,从控制电源热备用方式、数据采集、控制、切换、通信、自检及告警、对时几个方面定义了其功能设计,文末给出了变压器智能风冷控制系统核心部件控制IED的软硬件设计方案。     

基于MMS Client-OPC Server的数字变电站通信实现

介绍了IEC61850的主要内容、组成和特点,说明了将IEC61850标准应用于变电站整体通信的原理和结构,详细分析了变电站与IED之间的通信原理与实现,着重介绍了基于AX-S4 MMS(MMS Client-OPC Server)的通信结构以及具体实现流程.基于AX-S4 MMS软件建立了站内服务器与间隔层IED之间的MMS连接,并开发了应用于该标准的OPC客户端访问软件.实例说明,该通信方式便捷、高效,能够实现变电站级各种通信要求.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.