多层介质光学膜系的误差分析——膜层厚度变化的灵敏度因子

文中推导了对于给定膜系的特定膜层的厚度变化的灵敏度因子计算公式，并给出了用计算机对不同膜系的计算实例。分析了厚度灵敏度因子对膜系透射光谱的灵敏谱段、灵敏膜层等特性的影响规律，并由此给出了确定膜层厚度允差的方法。     

介质膜光谱反射系数的测量方法

在激光技术中,为了构成谐振腔及空间分离基频辐射和谐波,要使用在较窄光谱区内具有高反射系数p的多层介质膜。在研制此种膜系的时候,必须深入分析膜的各组成层及整个膜系的光谱特性ρ(λ)。     

1064 nm倍频波长分离膜的制备与性能研究

通过对主膜系添加匹配层并借助计算机对膜系进行优化，设计出结构规整、性能优良的1064ilm倍频波长分离膜。用电子束蒸发及光电极值监控技术在K9玻璃基底上沉积薄膜，将样品置于空气中在260℃温度下进行3h热退火处理。然后用Lambda 900分光光度计测量了样品的光谱性能；用表面热透镜(STL)技术测量了样品的弱吸收值；用调Q脉冲激光装置测试了样品的抗激光损伤阈值(LIDT)。实验结果发现，样品的实验光谱性能与理论光谱性能有很好的一致性。退火前后其光谱性能几乎没有发生温漂，说明薄膜的温度稳定性好；同时退火使样品的弱吸收减小，从而其激光损伤阈值提高。理论和实验结果均表明，对主膜系添加匹配层的方法是1064nm倍频波长分离膜设计的较好方法。     

多角度光谱测量法制备短波通滤光膜技术

详细论述了短波通滤光膜的理论设计与实际制备结果,光谱曲线偏离的原因及修正方法。首先选择高、低折射率膜料设计短波通滤光膜系,然后进行实际膜系制备。由于镀膜机存在控制误差,使得实际膜层制备厚度偏离理论厚度,导致实际制备光谱曲线超差。通过利用多角度光谱测量法对制备结果进行测量,依据多次测量结果的曲线偏离量,判断产生膜层厚度误差的膜料、膜层厚度误差的偏差大小及方向。在修正膜层厚度误差后,制备了光谱曲线平坦变化的短波通滤光膜。这种光谱性能更好的短波通滤光膜可以避免光学系统的偏色效应,此项技术为短波通滤光膜的设计与加工提供了新的理论依据与制备方案。     

光通信用光纤端面截止滤光膜的研制

为了满足光通信中对光纤端面镀多层膜的特殊需求,分析了光纤端面镀制截止滤光膜所存在的难点问题,利用TFCalc薄膜设计软件,采用解析法设计了一个初始膜系,再结合梯度优化法对初始膜系进行优化处理,成功设计出具有较好光谱性能的光纤端面截止滤光膜的膜系,并对德国莱宝APS1104型镀膜机进行了内部结构和镀制工艺的改进,最终采用离子源辅助沉积进行低温镀制,获得了性能优良的光纤端面截止滤光膜。结果表明,在光纤端面镀制多层的截止滤光膜,虽然存在很多困难,但选择合适的膜系和镀制工艺,依然能获得符合实际要求的滤光膜。     

多波段激光滤光膜的研制

针对光学仪器对多光谱光轴测试的特殊要求,采用电子束真空镀膜的方法并加以离子辅助沉积系统,通过对材料的光学特性、膜系设汁和监控厚度误差的分析,优化工艺参数,在多光谱ZnS基底上,成功镀制多波段激光滤光膜,实现了多波段光谱的分束.所镀膜层在30°角入射条件下,可见400～700 nm波长范围内平均透射率高于90%,1064 nm和1540 nm波长处的透射率都低于5%,在红外波长10.6μm透射率高于92%,并且解决了膜层牢固性问题,能够承受激光光源的照射和恶劣的环境测试,完全满足光学仪器的使用要求.     

基于高光谱成像芯片中布拉格反射镜的设计和制备

针对传统高光谱成像系统体积质量大、光机结构复杂、成本高等缺点,亟待微小型化的需求,开展高光谱成像芯片中布拉格反射镜设计和制备的研究,根据布拉格分布膜系理论开发的多层膜系结构的模拟器,并根据结构设计完成了5层和7层膜系布拉格反射镜的制作,利用可见/近红外分光光度计,对布拉格反射镜的反射率进行测量,与模拟器进行对比,由于布拉格镜的实际制备存在瑕疵,导致误差 3%,多层膜系结构模拟器可以指导实际布拉格反射镜的制备,为高光谱成像芯片化奠定基础。     

给定波长透射率大于98%的介质干涉膜的制造

研究了获得任意给定波长透射率大于98％的非吸收多层介质膜光谱曲线校正的方法。采用附加几层膜层的方法,制成类似于法布里-珀罗干涉仪的系统,被校正的介质膜作为它的一个反射板。     

光纤尾纤波分复用滤光膜的研制

根据光纤通信无源器件对光学薄膜的特殊需求, 要求在光纤尾纤上镀制较复杂的波分复用滤光膜, 针对光纤镀膜所存在的难点问题, 利用TFCalc 膜系设计软件采用解析法设计出一个初始的规整膜系, 再结合梯度优化法在该规整膜系上有选择性的局部优化, 并考虑镀膜设备所允许的膜层灵敏度, 评估其鲁棒性和可镀制性, 从而设计出满足光谱特性要求的滤光膜膜系.然后通过对德国莱宝APS1104 型镀膜机进行内部结构改造并选择合适的冷镀工艺, 最终采用离子源辅助沉积对所设计的膜系进行了实际镀制, 获得了性能优良的光纤尾纤波分复用滤光膜.     

具有亚表面损伤层基底表面的激光减反膜设计

光学材料的亚表面损伤层（SSD）是激光光学领域内的研究热点之一。亚表面损伤层的存在将导致其表面薄膜特性发生变化,尤其是在高精度低损耗激光薄膜的设计与制造中亚表面损伤层必须给予考虑。文中研究了亚表面损伤层的物理特性,并借助于椭圆偏振仪测量基底表面的椭偏光谱,反演计算出SSD 的物理厚度和折射率梯度。通过计算得到了亚表面的深度和梯度对激光减反膜反射率光谱的影响,证明了亚表面深度对反射率的影响具有周期效应。在考虑亚表面损伤层的深度和梯度存在的基础上,对激光减反膜的设计进行了理论修正,数值实验结果证明通过膜系的修正可以实现633 nm 处的零反射。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first