共查询到18条相似文献,搜索用时 62 毫秒
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在本文中,我们利用钛青铜(CuPc)和氟化钛青铜(F16CuPc)作为空穴传输层和电子传输层的制备了具有异质结结构的有机场效应晶体管(OFETs)。与单层的F16CuPc晶体管相比,异质结结构的晶体管的电子迁移率从3.1×10-3cm2/Vs提高至8.7×10-3cm2/vs,然而,空穴的传输行为却没有被观测到。为了提高空穴的注入能力,我们利用MoO3对源-漏电极进行了修饰,有效地改善了空穴注入。并进一步证实了MoO3的引入使得器件的接触电阻变小,平衡了电子和空穴的注入,从而最终实现了器件的双极性传输。 相似文献
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利用对四联苯p -4P 以及五氧化二钒V2O5同时修饰导电沟道及源/漏电极,大幅
提高了基于酞菁铜CuPc场效应晶体管的性能。本文通过在绝缘层SiO2和有源层CuPc
之间插入p-4p缓冲薄层,同时在源/漏电极Al与有机半导体之间引入电极修饰层V2O5,
使得CuPc场效应晶体管的饱和迁移率和电流开/关比分别提高到5×10-2cm2 / V s和
104。p -4P能够诱导p型CuPc形成高度取向的连续薄膜,使得载流子能够在有源层中
更好地传输;而V2O5能够调节载流子的注入势垒,并可有效地降低沟道接触电阻(Rc)。
此方法能够在降低器件制备成本的前提下,大幅提高器件的性能。 相似文献
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The pentacene-based organic field effect transistor (OFET) with a thin transition metal oxide (WO3) layer between pentacene and metal (AI) source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/(V.s) and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. 相似文献
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为了研究N沟道硅结型场效应晶体管(JFET)在辐照环境下的电特性和噪声特性,利用Co-60源对其进行了γ射线辐照试验。辐照剂量率为0.1 rad(Si)/s,累积总剂量为100k rad(Si),辐照试验以及参数测试均在室温下进行。辐照后,器件的电特性保持不变,但产生复合(g-r)噪声随辐照剂量的增加而增大。通过对噪声功率谱密度数据拟合后发现,g-r噪声的特征频率只有非常微小的变化,而g-r噪声幅度在逐渐增大。利用辐照引起的相同种类(激活能相同)的点缺陷密度的增加以及点缺陷捕获-释放载流子几率的增大机制对试验数据进行了解释。 相似文献
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8-羟基喹啉铝作为修饰层对C60有机场效应管性能影响的研究 总被引:1,自引:1,他引:0
采用真空蒸镀技术制备了以喹啉铝(tris(8-hydroxyquinoline) aluminum, Alq3)作为修饰层的C60有机场效应管器件,并研究了修饰层的厚度对于器件性能的影响。实验表明,随着Alq3修饰层厚度的增加,器件的性能参数得到改进。当Alq3修饰层厚度为10nm时,器件场效应的迁移率达到最大值,为1.2810-2cm2/Vs,阈值电压也下降到了10V。分析了缓冲层使器件性能提高的主要原因可能有两个:一个是可以阻止金属原子扩散进入C60有机层,另一个是使Al/C60界面间的沟道电阻降低。 相似文献
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To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air. 相似文献
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以C60为激活层,同时以聚合物/高K氧化物双绝缘层结构研制了N型有机场效应晶体管。结果表明,采用这种双层结构的绝缘层能够很好的将Ta2O5和PMMA的优点结合在一起,即既利用了Ta2O5的高介电常数又利用了PMMA与半导体层良好的界面接触特性。与采用单一Ta2O5或这PMMA绝缘层的器件相比,这种具有双层结构的器件性能大幅提升。最终研制了能够在10V低电压下正常工作的C60晶体管,其场效应迁移率、阈值电压和开关电流比分别为0.26 cm2/Vs, 3.2V和8.31×104。同时,利用修饰绝缘层PMMA的疏水性大大降低了这种具有双层结构的N型有机晶体管的“迟滞效应”,从而让器件工作时有较好的稳定性。 相似文献
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Air stable n-type organic field effect transistors (OFETs) based on C60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm2/V s in ambient air. Replacing the gate dielectric material by SiO2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air. 相似文献
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We have investigated the properties of C60-based organic field effect transistors(OFETs) with a tris(8- hydroxyquinoline) aluminum(Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film.The peak field effect mobility is increased to 1.28×10-2 cm2/(V·s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm.The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films. 相似文献
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Shree Prakash TiwariKeith A. Knauer Amir DindarBernard Kippelen 《Organic Electronics》2012,13(1):18-22
Performance of pentacene organic field-effect transistors (OFETs) is significantly improved by treatment of SiO2 with octyltrichlorosilane (OTS-8) compared to octadecyltrichlorosilane (OTS-18). The average hole mobility in these OFETs is increased from 0.4 to 0.8 cm2/Vs when treating the dielectric with OTS-8 versus OTS-18 treated devices. The atomic force microscope (AFM) images show that the OTS-8 treated surface produces much larger grains of pentacene (∼500 nm) compared to OTS-18 (∼100 nm). X-ray diffraction (XRD) results confirmed that the pentacene on OTS-8 is more crystalline compared to the pentacene on OTS-18, resulting in higher hole mobility. 相似文献
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Organic thin-film transistors (OTFTs) with various MoOx-doped pentacene channel layers were fabricated and investigated. Compared the OTFTs with the 0.50 mol% MoOx-doped pentacene to the conventional OTFTs without MoOx dopant, the maximum output current was increased from −11.6 to −37.9 μA, the effective field-effect mobility was enhanced from 0.71 to 1.60 cm2/V-s, the threshold voltage was reduced from −21.2 to −14.8 V, and the on/off current ratio slightly decreased from 3.6 × 106 to 1.2 × 106. The performance improvement was attributed to the highest occupied molecular orbital (HOMO) of the MoOx-doped pentacene gradually approached to the Au work function with increasing the doping percentage of MoOx, which led to reduce the contact resistance and to enhance the p-type characteristics of the MoOx-doped OTFTs by increasing the hole density and enhancing the hole-injection efficiency. However, the output current and the field-effect mobility decreased with an increase of the MoOx doping percentage, if the doping mole percentage of MoOx was higher than 0.50%. This behavior was attributed to the Fermi level pinning effect, gradual increase of hole concentration and significant degradation of crystallinity. 相似文献
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Jin-Peng Yang Qi-Jun Sun Keiichirou Yonezawa Alexander Hinderhofer Alexander Gerlach Katharina Broch Fabio Bussolotti Xu Gao Yanqing Li Jianxin Tang Frank Schreiber Nobuo Ueno Sui-Dong Wang Satoshi Kera 《Organic Electronics》2014,15(11):2749-2755
C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (1 1 1) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21 cm2 V−1 s−1 to 2.92 cm2 V−1 s−1 by inserting the template-DIP layer. Moreover much higher operational stability is also observed for the DIP-template C60 OTFTs. A grazing incidence X-ray diffraction and ultrahigh-sensitivity photoelectron spectroscopy measurements indicate that the improved electron mobility and stability arise from the decreased density of trap states in the C60 film due to increased (1 1 1) orientation of C60-grains and their crystallinity on the DIP template. 相似文献
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Lead phthalocyanine (PbPc) based photosensitive organic field effect transistors (PhOFETs) with different-thickness pentacene inducing layers (INLs) inserted between SiO2 and PbPc layer were fabricated and characterized. The photoelectric measurements demonstrate that the device with 2-nm-thick pentacene INL exhibits the largest photoresponsivity of 505.75 mA/W and maximum photo/dark current ratio of 405.35 in all devices. For this, we give an overall explanation that different-thickness INLs display different continuity and crystallinity and thus produce strong or weak template inducing. Especially, when the INL thickness (δ) is 2 nm a quasi-continuous and highly crystalline approximate-monolayer INL forms on SiO2 surface, which may play a strong role of template inducing, thus causing its upper PbPc film to demonstrate the strongest triclinic (3 0 0) line and the strongest NIR absorption in series PbPc films. When δ = 1 nm, pentacene does not form a continuous film. And when δ = 5 or 10 nm, a continuous multilayer INL with a declined crystallinity due to possible lattice mismatch forms on SiO2 surface and gives a weakened template inducing. Thereby, it can be recognized that inserting a pentacene INL can markedly enhance the performance of single layer PbPc PhOFET and the optimum INL thickness is proved ∼2 nm in present conditions. 相似文献