Temperature stability of ZnO thin film SAW device on fused quartz

Surface acoustic wave (SAW) filters for low-frequency (38-65 MHz) applications have been developed using a radio frequency (RF)-magnetron-sputtered ZnO film on fused-quartz substrates. SAW propagation characteristics such as electromechanical coupling coefficient (K/sup 2/), SAW phase velocity (v), insertion loss, and temperature coefficient of delay (TCD) have been measured. The intergidital transducer (IDT)/ZnO/fused-quartz device structure yields almost zero TCD (1 ppm/spl middot//spl deg/C/sup -1/) with 0.316 /spl lambda/ thick ZnO layer (for the device operating at 60 MHz). Alternately, an overlayer of positive TCD material (ZnO itself) has also been deposited on the IDT/ZnO(<0.316 /spl lambda/)/fused-quartz device at a low substrate temperature to reduce the TCD. A modified layered structure consisting of ZnO/IDT/ZnO/fused quartz yields almost zero TCD (-3 ppm/spl middot//spl deg/C/sup -1/) with a 5.3-/spl mu/m-thick ZnO overlayer and a 8.1-/spl mu/m-thick (0.183 /spl lambda/) ZnO bottom layer. Experimentally obtained SAW propagation characteristics have been compared with the theoretical results.     

A new method to determine the absolute mode number of a mode-locked femtosecond-laser comb used for absolute optical frequency measurements

The generation of optical frequency combs, directly referenced to the SI second, can be used to make measurements of optical frequencies. This provides a supreme method for the realization of the meter. However, an approximate knowledge of the frequency of the radiation is normally needed for such measurements in order to determine the integral order of the comb component used. Such information is usually obtained by prior wavelength measurements of the radiation under study. This paper demonstrates a new method to determine the absolute mode number in optical frequency measurements using mode-locked femtosecond lasers, thus eliminating the need for complementary wavelength measurements. Measurements of the frequency of an iodine-stabilized He-Ne laser at /spl lambda/=633 nm and a Nd:YAG laser at /spl lambda/=532nm are given as examples.     

Optical coherence tomography for in vitro monitoring of wound healing after laser irradiation

We demonstrate a novel application of optical coherence tomography (OCT) to monitor post-laser irradiation collagen injury in model skin. An artificial skin model (RAFT), which closely approximates human skin, was irradiated with a Perovskite laser (/spl lambda/=1341 nm), which is under investigation for potential use as a nonablative laser skin rejuvenation device (NALSR). OCT was used to determine the extent of laser injury immediately post irradiation and, subsequently, to monitor tissue recovery over a seven-day period. OCT images clearly delineated areas of post-irradiation collagen injury and allowed noninvasive monitoring of the wound healing process. Histology was used for comparison and correlated well with OCT images. OCT offers advantages over standard histology as it is noninvasive and allows serial monitoring at the same site over time. Our results indicate that OCT has potential as a method for characterization of collagen injury post-laser irradiation and may be a useful tool for determination of optimal parameters for NALSR using different devices under investigation for this indication.     

ITO-Schottky photodiodes for high-performance detection in the UV-IR spectrum

High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (/spl lambda/<400 nm), near-IR (/spl lambda//spl sim/850 nm), and IR (/spl lambda//spl sim/1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.     

Laser-activated shape memory polymer microactuator for thrombus removal following ischemic stroke: preliminary in vitro analysis

Due to the narrow (3-h) treatment window for effective use of the thrombolytic drug recombinant tissue-type plasminogen activator (rt-PA), there is a need to develop alternative treatments for ischemic stroke. We are developing an intravascular device for mechanical thrombus removal using shape memory polymer (SMP). We propose to deliver the SMP microactuator in its secondary straight rod form (length=4 cm, diameter=350 /spl mu/m) through a catheter distal to the vascular occlusion. The microactuator, which is mounted on the end of an optical fiber, is then transformed into its primary corkscrew shape by laser heating (diode laser, /spl lambda/=800 nm) above its soft-phase glass transition temperature (T/sub gs/=55/spl deg/C). Once deployed, the microactuator is retracted, and the captured thrombus is removed to restore blood flow. The SMP is doped with indocyanine green (ICG) dye to increase absorption of the laser light. Successful deployment of the microactuator depends on the optical properties of the ICG-doped SMP, as well as the optical coupling efficiency of the interface between the optical fiber and the SMP. Spectrophotometry, thermal imaging, and computer simulation aided the initial design effort and continue to be useful tools for optimization of the dye concentration and laser power. Thermomechanical testing was performed to characterize the elastic modulus of the SMP. We have demonstrated laser activation of the SMP microactuator in air at room temperature, suggesting this concept is a promising therapeutic alternative to rt-PA.     

Electron spin relaxation in solids-an application to spontaneously occurring radical centre in phenol-formaldehyde resins

An outline of electron spin-relaxation is briefly presented with mechanisms and processes of spin-lattice relaxation in ionic and amorphous solids. Electron spin resonance (EPR) and pulsed EPR measurements were performed in the temperature range 4-300 K on a radical occurring in a dried resol phenol-formaldehyde resin. The radical appears in a small concentration of about 1/spl times/10/sup 16/ radicals/g in 30/spl deg/C dried samples and the number of the radicals increases continuously with time up to 2/spl times/10/sup 17/ radicals/g after 100 days. Computer simulations of the EPR spectrum show that breaking of the dimethylene ether linkage probably forms the radical during synthesis reactions. Electron spin-lattice relaxation rate increases relatively slowly on heating and at <80 K is determined by interactions with two-level tunnelling systems in the polymer structure. For higher temperatures the relaxation is governed by interactions with centres having energy levels split by 298 cm/sup -1/. Phase relaxation is described by the phase memory time with rigid lattice limit T/sub M//sup 0/=2 /spl mu/s. This time is shortened above 100 K by thermally activated radical molecule motions with activation energy 85 cm/sup -1/. The electron spin echo envelope modulation (ESEEM) spectrum shows unresolved peaks at /sup 1/H indicating strong molecular dynamics and delocalisation of the unpaired electron.     

Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers

The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-/spl mu/m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for /spl lambda/=1.22--1.34 /spl mu/m dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.     

Characteristics of a saturated 18.9-nm tabletop laser operating at 5-Hz repetition rate

We report the characteristics of a saturated high-repetition rate Ni-like Mo laser at 18.9 nm. This table-top soft X-ray laser was pumped at a 5-Hz repetition rate by 8-ps 1-J optical laser pulses impinging at grazing incidence into a precreated Mo plasma. The variation of the laser output intensity as a function of the grazing incidence angle of the main pump beam is reported. The maximum laser output intensity was observed for an angle of 20/spl deg/, at which we measured a small signal gain of 65 cm/sup -1/ and a gain-length product g/spl times/l>15. Spatial coherence measurements resulting from a Young's double-slit interference experiment show the equivalent incoherent source diameter is about 11 /spl mu/m. The peak spectral brightness is estimated to be of the order of 1/spl times/10/sup 24/ photons s/sup -1/ mm/sup -2/ mrad/sup -2/ within 0.01% spectral bandwidth. This type of practical, small scale, high-repetition soft X-ray laser is of interest for many applications.     

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/=0.98 /spl mu/m)

We conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 /spl mu/m. The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-/spl mu/m-wide stripe lasers having a cavity length of 800 /spl mu/m, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34/spl deg/, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW//spl mu/m) demonstrates reliable performance. For 4-/spl mu/m-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW//spl mu/m are obtained.     

Electrical characterization of benzocyclobutene polymers for electric micromachines

An approach using interdigitated capacitors for electrical characterization of CYCLOTENE, a spin-on low-k benzocyclobutene (BCB)-based polymer is introduced and the effect of moisture uptake is investigated. The dielectric constant of CYCLOTENE is extracted from capacitance measurements with a systematic error less than 0.1%, giving an average value of 2.49 with a standard deviation of 1.5%. The dielectric constant increases by 1.2% after a humidity stress of 85% RH at 85/spl deg/C. The I-V characteristics of CYCLOTENE show a dependency of breakdown strength and leakage current on the geometrical dimensions of the device under test. A breakdown strength of 225V//spl mu/m and 320 V//spl mu/m for 2-/spl mu/m and 3-/spl mu/m finger spacing, respectively, and a leakage current of a few to tens of pA are measured. The I-V characteristics degrade drastically after the humidity stress, showing a breakdown strength of 100 V//spl mu/m and 180 V//spl mu/m for 2-/spl mu/m and 3-/spl mu/m finger spacing, respectively, and a maximum increase in the leakage current as large as one order of magnitude. The maximum performance and long-term reliability of an electric micromachine are adversely affected by the degradation of the breakdown voltage and the leakage current after moisture absorption. It is expected, however, that the electrical efficiency is improved using BCB-based polymers with negligible dependency on moisture absorption.     

Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

As device scaling for higher performance bipolar transistors continues, the operation current density increases as well. To investigate the reliability impact of the increased operation current density on Si-based bipolar transistors, an accelerated-current wafer-level stress was conducted on 120-GHz SiGe heterojunction bipolar transistors (HBTs), with stress current density up to as high as J/sub C/=34 mA//spl mu/m/sup 2/. With a novel projection technique based on accelerated-current stress, a current gain shift of less than /spl sim/15% after 10/sup 6/ h of operation is predicted at T=140/spl deg/C. Degradation mechanisms for the observed dc parameter shifts are discussed for various V/sub BE/ regions, and the separation of the current stress effect from the self-heating effect is made based on thermal resistance of the devices. Module-level stress results are shown to be consistent with wafer-level stress results. The results obtained in this work indicate that the high-speed SiGe HBTs employed for the stress are highly reliable for long-term operation at high operation current density.     

Modeling the thermal response of porcine cartilage to laserirradiation

During laser irradiation of biological tissue, a number of physical processes take place that determine temperature elevation and thermal damage rates. Some of those important to laser-tissue interaction are: 1) propagation of light in scattering media; 2) transformation of laser light into photochemical, acoustic, or thermal energy; 3) tissue-tissue and tissue-environment heat and mass transfer; 4) and the occurrence of low-energy phase transformations responsible for structural alterations. The aim of this study was to formulate a finite-element model (FEM) able to predict the temperature distribution in a slab of porcine nasal cartilage during laser irradiation. The FEM incorporates heat diffusion, light propagation in tissue, and water evaporation from the surfaces of the slab. Numerical results were compared to experimental temperature distributions where surface and internal temperatures were measured while heating cartilage using a pulsed Nd: YAG laser (λ = 1.32 μm). Rectangular specimens, 1-4-mm thick, were secured perpendicular to the laser beam and irradiated for 1-15 s using different laser-beam powers (1-10 W)     

Comparative study on the spectroscopic properties of Nd:GdVO/sub 4/ and Nd:YVO/sub 4/ with hybrid process

We have proposed a hybrid procedure for determining spectroscopic parameters for uniaxial solid-state laser crystals. Using our procedure, the spectroscopic properties of Nd:GdVO/sub 4/ were evaluated and compared to those of Nd:YVO/sub 4/. As a result, the peaks of absorption and stimulated emission cross sections of Nd:GdVO/sub 4/ in /spl pi/-polarization were determined to be 2.6 and 10.3/spl times/10/sup -19/ cm/sup 2/, respectively, and were smaller than those of Nd:YVO/sub 4/. On the other hand, the fluorescence lifetime of 1 at% Nd:GdVO/sub 4/ was evaluated to be 83.4 /spl mu/s, and was similar to 84.1 /spl mu/s of 1 at% Nd:YVO/sub 4/. Therefore, the product of stimulated emission cross section and fluorescence lifetime (/spl sigma//sub em//spl tau//sub f/ product) of Nd:GdVO/sub 4/ was smaller than that of Nd:YVO/sub 4/ under 1 at% of Nd/sup 3+/ doping concentration. The radiative lifetime of spontaneous emission of Nd:GdVO/sub 4/ was 168 /spl mu/s and was 1.9 times longer than that of Nd:YVO/sub 4/. Because of the low value of radiative quantum efficiency of Nd:GdVO/sub 4/ (50%), careful cavity design is required for creating a well performing solid-state laser with Nd:GdVO/sub 4/, based on the larger /spl sigma//sub em//spl tau//sub f/ product rather than the /spl sigma//sub em//spl tau//sub f/ product of Nd:YAG.     

The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.     

Measurement of /spl lambda/-i characteristics of asymmetric three-phase transformers and their applications

Modeling of three-phase transformers with three-limb cores is important, such units are very ubiquitous and are asymmetric due to the different lengths of the three limbs of the core. It is, therefore, important to devise a measuring procedure, where the (/spl lambda/-i) characteristics of the three limbs and the zero-sequence (/spl lambda//sub 0/-i/sub 0/) characteristic due to the tank can be determined. A simulation program is developed so that currents at no-load and symmetric or asymmetric loads can be computed. Measured currents are compared with computed results for 2.3-kVA and 45-kVA units.     

Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD

1.3- and 1.55-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs-InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 /spl mu/m) and 2.0 (for 1.55 /spl mu/m) mW single mode power at 25/spl deg/C, 0.6 mW single mode power at 85/spl deg/C and lasing operation at >100/spl deg/C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-/spl mu/m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-/spl mu/m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.     

1.3-/spl mu/m AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation

We have successfully fabricated 1.3-/spl mu/m AlGaInAs strain-compensated multiple-quantum-well (MQW) buried-heterostructure (BH) lasers by narrow-stripe selective metalorganic vapor-phase epitaxy. Based on the optimization of AlGaInAs strain compensated MQW and the Al-oxidation-free BH process, we obtained a low-threshold current of 12.5 mA and a relaxation frequency of more than 10 GHz at 85/spl deg/C for Fabry-Perot lasers. For distributed feedback lasers, we demonstrated a 10-Gb/s operation and transmission of over 16 Km for a single mode fiber at 100/spl deg/C. Furthermore, a record-low 25.8-mA/sub p-p/ modulation current for a 10-Gb/s modulation at 100/spl deg/C was demonstrated with shorter cavity and high grating-coupling coefficient. A median life of more than 1/spl times/10/sup 5/ h at 85/spl deg/C was estimated after an aging test of over 5000 h for these lasers. These superior characteristics at high temperatures were achieved by the combination of the high differential gain of AlGaInAs strain compensated MQW and the BH structure.     

Low-temperature deposition of hafnium silicate gate dielectrics

The physical and electrical properties of hafnium silicate (HfSi/sub x/O/sub y/) films produced by low-temperature processing conditions (/spl les/150/spl deg/C) suitable for flexible display applications were studied using sputter deposition and ultra-violet generated ozone treatments. Films with no detectable low-/spl kappa/ interfacial layer were produced. Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy were used to determine the composition, chemical bonding environment, thickness, and film interface. The electrical behavior of the as-deposited and annealed hafnium silicate films were determined by current-voltage (I--V) and capacitance-voltage (C--V) measurements.     

Space charge studies in LDPE using combined isothermal and nonisothermal current measurements

Using a recently developed procedure combining isothermal and nonisothermal current measurements space charge trapping and transport in LDPE was successfully studied. Unaged, thermally and electrically aged samples were investigated. The samples were conditioned before each measurement in order to obtain reproducible results. In the nonisothermal measurements appeared a broad peak (40/spl deg/C to 50/spl deg/C) that was possible to decompose into two or three peaks (35, 45 and 65/spl deg/C). At even higher temperature another peak was sometimes present (85/spl deg/C) depending on the prior sample conditioning. The space charge is trapped near the surface in deep traps (maximum depth of /spl ap/15 /spl mu/m). Relaxation times, mobilities and activation energies have been calculated for different charging/discharging conditions. For unaged samples the reproducibility of the results was poor while for the aged polyethylene it was quite good, meaning that aging helps conditioning. In the electrically aged LDPE there is a decrease of conductivity and the broad peak of the nonisothermal spectra shows a slight shift towards higher temperatures when compared with the data found in the thermally aged polymer.     

Single-mode distributed feedback and microlasers based on quantum-dot gain material

Quantum-dot gain material fabricated by self-organized epitaxial growth on GaAs substrates is used for the realization of 980-nm and 1.3-/spl mu/m single-mode distributed feedback (DFB) lasers and edge-emitting microlasers. Quantum-dot specific properties such as low-threshold current, broad gain spectrum, and low-temperature sensitivity could be demonstrated on ridge waveguide and DFB lasers in comparison to quantum-well-based devices. 980-nm DFB lasers exhibit stable single-mode behavior from 20/spl deg/C up to 214/spl deg/C with threshold currents < 15 mA (1-mm cavity length). Utilizing the low-bandgap absorption of quantum-dot material miniaturized monolithically integrable edge-emitting lasers could be realized by deeply etched Bragg mirrors with cavity lengths down to 12 /spl mu/m. A minimum threshold current of 1.2 mA and a continuous-wave (CW) output power of >1 mW was obtained for 30-/spl mu/m cavity length. Low-threshold currents of 4.4 mA could be obtained for 1.3-/spl mu/m emitting 400-/spl mu/m-long high-reflection coated ridge waveguide lasers. DFB lasers made from this material by laterally complex coupled feedback gratings show stable CW single-mode emission up to 80/spl deg/C with sidemode suppression ratios exceeding 40 dB.