Low-voltage, large-scan angle MEMS analog micromirror arrays with hidden vertical comb-drive actuators

This paper reports on novel polysilicon surface-micromachined one-dimensional (1-D) analog micromirror arrays fabricated using Sandia's ultraplanar multilevel MEMS technology-V (SUMMiT-V) process. Large continuous DC scan angle (23.6/spl deg/ optical) and low-operating voltage (6 V) have been achieved using vertical comb-drive actuators. The actuators and torsion springs are placed underneath the mirror (137/spl times/120 /spl mu/m/sup 2/) to achieve high fill-factor (91%). The measured resonant frequency of the mirror ranges from 3.4 to 8.1 kHz. The measured DC scanning characteristics and resonant frequencies agree well with theoretical values. The rise time is 120 /spl mu/s and the fall time is 380 /spl mu/s. The static scanning characteristics show good uniformity (相似文献   

Polymer-based cantilevers with integrated electrodes

An innovative release method of polymer cantilevers with embedded integrated metal electrodes is presented. The fabrication is based on the lithographic patterning of the electrode layout on a wafer surface, covered by two layers of SU-8 polymer: a 10-/spl mu/m-thick photo-structured layer for the cantilever, and a 200-/spl mu/m-thick layer for the chip body. The releasing method is based on dry etching of a 2-/spl mu/m-thick sacrificial polysilicon layer. Devices with complex electrode layout embedded in free-standing 500-/spl mu/m-long and 100-/spl mu/m-wide SU-8 cantilever were fabricated and tested. We have optimized major fabrication steps such as the optimization of the SU-8 chip geometry for reduced residual stress and for enhanced underetching, and by defining multiple metal layers [titanium (Ti), aluminum (Al), bismuth (Bi)] for improved adhesion between metallic electrodes and polymer. The process was validated for a miniature 2/spl times/2 /spl mu/m/sup 2/ Hall-sensor integrated at the apex of a polymer microcantilever for scanning magnetic field sensing. The cantilever has a spring constant of /spl cong/1 N/m and a resonance frequency of /spl cong/17 kHz. Galvanometric characterization of the Hall sensor showed an input/output resistance of 200/spl Omega/, a device sensitivity of 0.05 V/AT and a minimum detectable magnetic flux density of 9 /spl mu/T/Hz/sup 1/2/ at frequencies above 1 kHz at room temperature. Quantitative magnetic field measurements of a microcoil were performed. The generic method allows for a stable integration of electrodes into polymers MEMS and it can readily be used for other types of microsensors where conducting metal electrodes are integrated in cantilevers for advanced scanning probe sensing applications.     

Microoptical characterization of piezoelectric vibratory microinjections in drosophila embryos for genome-wide RNAi screen

In this paper, we study the effect of acoustic agitation on the penetration force for microinjections in Drosophila embryos for genome-wide RNA interference (RNAi) screens, using an integrated optical MEMS force encoder for in vivo characterization of the dynamic penetration forces. Two modes of operation are investigated. In the first mode of operation, the injector is brought into contact and acts on the embryo with a fixed force, and the vibration amplitude of the microinjector is increased till penetration occur. We observed a linear decrease in the penetration force of 1.6 /spl mu/N with every 0.1 m/s tip velocity increase. In the second mode of operation, the vibration amplitude is kept constant and the injector is pushed into the embryo until penetration. We simulate the optical force encoder eigenmodes and measure the injection force over the frequency range from 0 to 16 kHz with actuation voltages up to 150V. Among the eight encoder eigenmodes with resonant frequency up to 16 kHz, the longitudinal vibration along the injector is shown to dominate the force reduction at 14 kHz. Two other modes, both involving significant out-of-plane injector motion, reduce the penetration force by 52% around 3.1 kHz. The average penetration force is calculated based on injections into multiple embryos for each experimental condition. For each microinjection, the peak (or average) penetration force can be derived from the peak (or average) relative displacement of the two gratings upon penetration. The achieved minimum peak penetration force was 15.6 /spl mu/N (/spl sim/29.7% of the static penetration force), while the minimum average penetration force was 2.7 /spl mu/N (5.1% of the static penetration force).     

Robust design and model validation of nonlinear compliant micromechanisms

Although the use of compliance or elastic flexibility in microelectromechanical systems (MEMS) helps eliminate friction, wear, and backlash, compliant MEMS are known to be sensitive to variations in material properties and feature geometry, resulting in large uncertainties in performance. This paper proposes an approach for design stage uncertainty analysis, model validation, and robust optimization of nonlinear MEMS to account for critical process uncertainties including residual stress, layer thicknesses, edge bias, and material stiffness. A fully compliant bistable micromechanism (FCBM) is used as an example, demonstrating that the approach can be used to handle complex devices involving nonlinear finite element models. The general shape of the force-displacement curve is validated by comparing the uncertainty predictions to measurements obtained from in situ force gauges. A robust design is presented, where simulations show that the estimated force variation at the point of interest may be reduced from /spl plusmn/47 /spl mu/N to /spl plusmn/3 /spl mu/N. The reduced sensitivity to process variations is experimentally validated by measuring the second stable position at multiple locations on a wafer.     

Surface- and bulk- micromachined two-dimensional scanner driven by angular vertical comb actuators

In this paper, we present the design, fabrication, and measurements of a two-dimensional (2-D) optical scanner with electrostatic angular vertical comb (AVC) actuators. The scanner is realized by combining a foundry-based surface-micromachining process (Multi-User MEMS Processes-MUMPs) with a three-mask deep-reactive ion-etching (DRIE) postfabrication process. The surface-micromachining provides versatile mechanical design and electrical interconnect while the bulk micromachining offers high-aspect ratio structures leading to flat mirrors and high-force, large-displacement actuators. The scanner achieves dc mechanical scanning ranges of /spl plusmn/6.2/spl deg/ (at 55 Vdc) and /spl plusmn/4.1/spl deg/ (at 50 Vdc) for the inner and outer gimbals, respectively. The resonant frequencies are 315 and 144 Hz for the inner and the outer axes, respectively. The 1-mm-diameter mirror has a radius of curvature of over 50 cm. [1454].     

A micromachining process for die-scale pattern transfer in ceramics and its application to bulk piezoelectric actuators

This paper reports on a batch mode planar pattern transfer process for bulk ceramics, glass, and other hard, brittle, nonconductive materials suitable for micromachined transducers and packages. The process is named LEEDUS, as it combines lithography, electroplating, batch mode micro electro-discharge machining (/spl mu/EDM) and batch mode micro ultrasonic machining (/spl mu/USM). An electroplating mold is first created on a silicon or metal wafer using standard lithography, then using the electroplated pattern as an electrode to /spl mu/EDM a hard metal (stainless steel or WC/Co) tool, which is finally used in the /spl mu/USM of the ceramic substrate. A related process (SEDUS) uses serial /spl mu/EDM and omits lithography for rapid prototyping of simple patterns. Feature sizes of 25 /spl mu/m within a 4.5/spl times/4.5 mm/sup 2/ die have been micromachined on glass-mica (Macor) ceramic plates with 34 /spl mu/m depth. The ultrasonic step achieves 18 /spl mu/m/min. machining rate, with a tool wear ratio of less than 6% for the stainless steel microtool. Other process characteristics are also described. As a demonstration, octagonal and circular spiral shaped in-plane actuators were fabricated from bulk lead zirconate titanate (PZT) plate using the LEEDUS/SEDUS process. A device of 20 /spl mu/m thickness and 450 /spl mu/m/spl times/420 /spl mu/m footprint produces a displacement of /spl ap/2/spl mu/m at 40 V.     

A low-temperature thin-film electroplated metal vacuum package

This paper presents a packaging technology that employs an electroplated nickel film to vacuum seal a MEMS structure at the wafer level. The package is fabricated in a low-temperature (<250/spl deg/C) 3-mask process by electroplating a 40-/spl mu/m-thick nickel film over an 8-/spl mu/m sacrificial photoresist that is removed prior to package sealing. A large fluidic access port enables an 800/spl times/800 /spl mu/m package to be released in less than three hours. MEMS device release is performed after the formation of the first level package. The maximum fabrication temperature of 250/spl deg/C represents the lowest temperature ever reported for thin film packages (previous low /spl sim/400/spl deg/C). Implementation of electrical feedthroughs in this process requires no planarization. Several mechanisms, based upon localized melting and Pb/Sn solder bumping, for sealing low fluidic resistance feedthroughs have been investigated. This package has been fabricated with an integrated Pirani gauge to further characterize the different sealing technologies. These gauges have been used to establish the hermeticity of the different sealing technologies and have measured a sealing pressure of /spl sim/1.5 torr. Short-term (/spl sim/several weeks) reliability data is also presented.     

Characterization of selective polysilicon deposition for MEMS resonator tuning

Variations in micromachining processes cause submicron differences in the size of MEMS devices, which leads to frequency scatter in resonators. A new method of compensating for fabrication process variations is to add material to MEMS structures by the selective deposition of polysilicon. It is performed by electrically heating the MEMS in a 25/spl deg/C silane environment to activate the local decomposition of the gas. On a (1.0/spl times/1.5/spl times/100) /spl mu/m/sup 3/, clamped-clamped, polysilicon beam, at a power dissipation of 2.38 mW (peak temperature of 699/spl deg/C), a new layer of polysilicon (up to 1 /spl mu/m thick) was deposited in 10 min. The deposition rate was three times faster than conventional LPCVD rates for polysilicon. When selective polysilicon deposition (SPD) was applied to the frequency tuning of specially-designed, comb-drive resonators, a correlation was found between the change in resonant frequency and the length of the newly deposited material (the hotspot) on the resonator's suspension beams. A second correlation linked the length of the hotspot to the magnitude of the power fluctuation during the deposition trial. The mechanisms for changing resonant frequency by the SPD process include increasing mass and stiffness and altering residual stress. The effects of localized heating are presented. The experiments and simulations in this work yield guidelines for tuning resonators to a target frequency.     

Electrostatic charge and field sensors based on micromechanical resonators

We have developed highly sensitive electrometers and electrostatic fieldmeters (EFMs) that make use of micromechanical variable capacitors. Modulation of the input capacitance, a technique used in macroscale instruments such as the vibrating-reed electrometer and the field-mill electrostatic voltmeter (ESV), moves the detection bandwidth away from the 1/f-noise-limited regime, thus improving the signal-to-noise ratio (SNR). The variable capacitors are implemented by electrostatically driven resonators with differential actuation and sensing to reduce drive-signal feedthrough. The resonators in the electrometer utilize a balanced comb structure to implement harmonic sensing. Two fabrication methods were employed - a hybrid technology utilizing fluidically self-assembled JFETs and SOI microstructures, and an integrated process from Analog Devices combining 0.8-/spl mu/m CMOS and 6-/spl mu/m-thick polysilicon microstructures. All devices operate in ambient air at room temperature. Measured data from one electrometer with an input capacitance of 0.7 pF indicates a charge resolution of 4.5 aC rms (28 electrons) in a 0.3 Hz bandwidth. The resolution of this electrometer is unequaled by any known ambient-air-operated instrument over a wide range of source capacitances. The EFM has a resolution of 630 V/m, the best reported figure for a MEMS device.     

低热机械噪声MEMS加速度计设计

介绍了一种能够在大气条件下具备低噪声、高灵敏度特性的MEMS加速度计设计、制作与测试.器件采用梳齿电容检测方法,利用MEMS体硅加工工艺,实现了210对梳齿的加速度计制作.该加速度计不需要真空封装和阻尼孔就能实现低热机械噪声特性,其理论热机械噪声为0.018μg/√Hz.加速度计芯片在大气封装和无阻尼孔情况下Q值高达4...     

An optically powered wireless telemetry module for high-temperature MEMS sensing and communication

A high-temperature, low-power silicon tunnel diode oscillator transmitter with an on-board optical power converter is proposed for harsh environment MEMS sensing and wireless data telemetry applications. The prototype sensing and transmitting module employs a MEMS silicon capacitive pressure sensor performing pressure to frequency conversion and a spiral loop serving as an inductor for the LC tank resonator and also as a transmitting antenna. A GaAs photodiode converts an incoming laser beam to an electrical energy for powering the prototype design. The system achieves a telemetry performance up to 250/spl deg/C over a distance of 1.5 m with a transmitter power consumption of approximately 60 /spl mu/W.     

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

An optical waveguide MEMS switch fabricated on an indium phosphide (InP) substrate for operation at 1550 nm wavelength is presented. Compared to other MEMS optical switches, which typically use relatively large mirrors or long end-coupled waveguides, our device uses a parallel switching mechanism. The device utilizes evanescent coupling between two closely-spaced waveguides fabricated side by side. Coupling is controlled by changing the gap and the coupling length between the two waveguides via electrostatic pull-in. This enables both optical switching and variable optical coupling at voltages below 10 V. Channel isolation as high as -47 dB and coupling efficiencies of up to 66% were obtained with switching losses of less than 0.5 dB. We also demonstrate voltage-controlled variable optical coupling over a 17.4 dB dynamic range. The devices are compact with 2 /spl mu/m/spl times/2 /spl mu/m core cross section and active area as small as 500 /spl mu/m/spl times/5 /spl mu/m. Due to the small travel range of the waveguides, fast operation is obtained with switching times as short as 4 /spl mu/s. Future devices can be scaled down to less than 1 /spl mu/m/spl times/1 /spl mu/m waveguide cross-sectional area and device length less than 100 /spl mu/m without significant change in device design.     

Design and nonlinear servo control of MEMS mirrors and their performance in a large port-count optical switch

In this paper, we demonstrate full closed-loop control of electrostatically actuated double-gimbaled MEMS mirrors and use them in an optical cross-connect. We show switching times of less than 10 ms and optical power stability of better than 0.2 dB. The mirrors, made from 10-/spl mu/m-thick single-crystal silicon and with a radius of 400-450 /spl mu/m, are able to tilt to 8/spl deg/ corresponding to 80% of touchdown angle. This is achieved using a nonlinear closed-loop control algorithm, which also results in a maximum actuation voltage of 85 V, and a pointing accuracy of less than 150 /spl mu/rad. This paper will describe the MEMS mirror and actuator design, modeling, servo design, and measurement results.     

A novel capacitive pressure sensor based on sandwich structures

This paper presents a sandwich structure for a capacitive pressure sensor. The sensor was fabricated by a simple three-mask process and sealed in vacuum by anodic bonding. The sensor, which utilizes a combined SiO/sub 2//Si/sub 3/N/sub 4/ layers as the elastic dielectric layers, exhibits high sensitivity. Mechanical characteristics of the sensor are theoretically analyzed based on a composite membrane theory and evaluated by use of finite element analysis (FEA). Square membrane sensors with side lengths of 800 /spl mu/m, 1000 /spl mu/m, 1200 /spl mu/m, and 1500 /spl mu/m were fabricated, providing a measured sensitivity of 0.08 pF/kPa, 0.12 pF/kPa, 0.15 pF/kPa, and 0.2 pF/kPa, respectively. The nonlinearity of the sensor is less than 1.2% over a dynamic range 80-106 kPa and the maximum hysteresis is about 3.3% to the full scale capacitance change. The TCO at 101 kPa is 1923 ppm//spl deg/C. All the electrodes of the sensor are leaded from the top side of the chip. Residual pressure in the sealed cavity at room temperature is evaluated by a pressure scanning test, indicating about 8 kPa. Comparison of experimental results with theoretical analysis shows that change of capacitance for the sandwich structure under pressure is mainly due to variation of the dielectric constant while geometric variations such as the area change of electrodes and the thickness change of dielectric layers is about two orders less than the variation of the dielectric constant. Sensitivity enhancements for the sensor are qualitatively discussed based on the physical effects of strained dielectrics, including electrostriction and flexoelectricity. [1551].     

Vertical comb array microactuators

A vertical actuator fabricated using a trench-refilled-with-polysilicon (TRiPs) process technology and employing an array of vertical oriented comb electrodes is presented. This actuator structure provides a linear drive to deflection characteristic and a large throw capability which are key features in many sensors, actuators and micromechanisms. The actuation principle and relevant theory is developed, including FastCap simulations for theoretical verification. Design simplifications have been suggested that enable one to use parallel plate analytical expressions which match simulation results with /spl sim/5.6% error. Several actuators were designed and fabricated using the 7-mask TRiPs technology with calculated drive voltages as low as 45 V producing 10 /spl mu/m of deflection. The actuators employed a mechanical structure that was 18 /spl mu/m tall using a polysilicon layer 1.5 /spl mu/m thick and occupying a total area of 750 /spl mu/m by 750 /spl mu/m. The actuators were successfully tested electrostatically and several microns of deflection were observed.     

Fabrication of helically perforated gold, nickel, and polystyrene thin films

Helical microstructures are of interest for MEMS devices because of their spring-like shape. However, helices with micron and submicron dimensions are difficult to engineer using conventional processing techniques where patterning is accomplished lithographically. In this paper, we report the fabrication of porous gold, nickel, and polystyrene thin films with helical pore architectures. All films were made using a replication process, in which a thin film comprised of independent helical microstructures acted as the template. Filling of the template with metals was achieved by electroplating through the microstructures, whereas filling with polystyrene was achieved by capillary action. Porous films were produced from these composites by wet etch removal of the template material. Typical helical pores were on the order of 100 nm in diameter and extended through a film 1 /spl mu/m to 2 /spl mu/m thick. These films were generally more robust than the films from which they were templated, since they consisted of a solid network with helical pores rather than individual structures. Polymer and metal films with helical pores could be used for sensor and catalytic devices that take advantage of the chemical properties of these materials. Polymer films are also of interest for mechanical sensor and actuator devices since they are expected to be more compliant than both traditional MEMS materials and the films from which they were templated.     

Arrays of hollow out-of-plane microneedles for drug delivery

Drug delivery based on MEMS technology requires an invasive interface such as microneedles, which connects the microsystem with the biological environment. Two-dimensional arrays of rigid hollow microneedles have been fabricated from single-crystal silicon using a combination of deep reactive ion etching and isotropic etching techniques. The fabricated needles are typically 200 /spl mu/m long with a wide base and a channel diameter of 40 /spl mu/m. The fabrication process allows creating either blunt needles or needles with sharp tips. Their shape and size make these needles extremely suitable for minimally invasive painless epidermal drug delivery. MEMS technology allows for batch fabrication and integration with complex microsystems. Fluid has been successfully injected 100 /spl mu/m deep into sample tissue through arrays of microneedles. Needle breakage did not occur during this procedure. Experiments have shown that the modified Bernoulli equation is a good model for liquid flowing through the narrow microneedle lumen.     

IC-integrated flexible shear-stress sensor skin

This paper reports the successful development of the first IC-integrated flexible MEMS shear-stress sensor skin. The sensor skin is 1 cm wide, 2 cm long, and 70 /spl mu/m thick. It contains 16 shear-stress sensors, which are arranged in a 1-D array, with on-skin sensor bias, signal-conditioning, and multiplexing circuitry. We further demonstrated the application of the sensor skin by packaging it on a semicylindrical aluminum block and testing it in a subsonic wind tunnel. In our experiment, the sensor skin has successfully identified both the leading-edge flow separation and stagnation points with the on-skin circuitry. The integration of IC with MEMS sensor skin has significantly simplified implementation procedures and improved system reliability.     

Performance improvement of an electrothermal microactuator fabricated using Ni-diamond nanocomposite

In this paper, a low-temperature stress-free electrolytic nickel (EL) deposition process with added dispersed diamond nanoparticles (diameter <0.5 /spl mu/m) is developed to synthesize Ni-diamond nanocomposite for fabricating electrothermal microactuators. Device characterization reveals dramatic performance improvements in the electrothermal microactuator that is made of the nanocomposite, including a reduction in the input power requirement and enhanced operation reliability. In comparison with the microactuator made of pure nickel, the nanocomposite one can save about 73% the power for a 3 /spl mu/m output displacement and have a longer reversible displacement range, which is prolonged from 1.8 /spl mu/m to more than 3 /spl mu/m. Furthermore, the nanocomposite device exhibits no performance degradation after more than 100 testing cycles in the reversible regime. The enhancements increase with the incorporation of the nanodiamond in a nickel matrix, so the Ni-diamond nanocomposite has potential for application in MEMS fabrication.     

A monolithic three-axis micro-g micromachined silicon capacitive accelerometer

A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-/spl mu/m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5 /spl mu/m) formed by a2004 sacrificial oxide layer. The fabricated accelerometer is 7/spl times/9 mm/sup 2/ in size, has 100 Hz bandwidth, >/spl sim/5 pF/g measured sensitivity and calculated sub-/spl mu/g//spl radic/Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 /spl mu/g//spl radic/Hz (>1.5 kHz) and 1.08 /spl mu/g//spl radic/Hz (>600 Hz) for in-plane and out-of-plane devices, respectively.