JPEG2000小波变换仿真

提出一种基于JPEG2000中推荐的提升结构的5/3小波变换硬件实现方案。该方案在加载数据的同时进行边界扩展,无须对运算电路进行逻辑控制,可以复用加法器,提高了资源利用率。该方案在FPGA上仿真通过。     

JPEG2000中小波滤波器的定点分析及其VLSI实现

对JPEG2 0 0 0中推荐的 5 /3整数滤波器和 9/7实数滤波器进行了硬件实现时所需要的有限精度分析 ;确定了小波变换过程中各个参数的最佳数据宽度 ,还确定了整个变换系统的数据通路的数据宽度。基于lifting的小波变换的特点结合嵌入式延拓算法提出了两种小波变换———折叠结构和长流水线结构 ;对两种结构进行了分析比较。最后 ,对折叠结构和相关的其它结构在所需存储单元的数量、存储单元的访问次数、处理能力以及功耗等方面进行了分析比较 ,可以看出文中提出的结构在性能上有明显优点。     

一种适用于JPEG2000的高速MQ编码器的VLSI实现

MQ编码器对于无损的数据压缩是一种非常有效的方法 ,它已被 JPEG2 0 0 0标准所采用。但该编码算法复杂度高 ,执行速度慢。文中提出了一种基于动态流水的高性能 MQ编码器的 VLSI结构。为了获得高速处理能力 ,首先分析了 JPEG2 0 0 0标准中 MQ编码算法的软件流程 ,并对其进行了相应的修改以适应硬件实现 ,然后采用了“动态流水”技术 ,可以根据变化的运算量来实时地安排流水操作。本 MQ编码器结构经 Xilinx FPGA实现 ,处理速度可达约 0 .6 2 5bit/ cycle( 32 .83Mbit/ sec)     

一种高精度能隙基准电压电路

在分析了几种基准电压源的基础上 ,设计并实现了一种高精度用于高速串行通信接口的 CMOS能隙基准电压电路。电路采用了两级高增益运放的优化结构 ,基于 TSMC公司的 CMOS 0 .2 5μm混合信号模型的仿真结果表明电路输出电压在 -5 0～ 70°C的温度内波动范围为 0 .0 5 7%。芯片流片测试结果发现基准电压电路在输入电压为 2 .5 V的条件下 ,工作在 -5 0～ 70°C的温度范围内 ,输出电压变化范围为 1 .2 3 3 7～ 1 .2 3 5 6V,输出电压变化率为 0 .1 5 4% ,与仿真结果之间的平均偏差为 0 .0 1 6%。能隙基准电压电路的版图面积为 1 5 8μm× 1 64μm。     

JPEG2000中算术编码的VLSI结构设计

算术编码算法对于无损数据压缩是一种非常有效的方法,它已经被JPEG2000标准所采用.通过研究JPEG2000标准中的算术编码算法,设计了一种算术编码器的VLSI结构.该设计用Verilog语言进行了RTL级描述,然后用Modelsira对电路进行了仿真,经Quartus综合以后在FPGA上进行了验证.实验表明,在Ahera的芯片EP2C35F672C8上,该设计最高工作时钟可达63.37 MHz,可以作为IP核应用于JPEG2000图像编码芯片中.     

基于SoC和软硬件协同处理的可重构JPEG2000实现

提出一种基于SOC、具有可重构功能的JPEG2000软硬件协同实现方案.重点分析并实现了一种提升9/7、5/3算法的统一流水线结构.对于标准算法中的彩色变换、内容模型生成模块、Tier1编码和MQ编码器采用硬件加速处理,并对图像预处理单元、Tier2编码和系统控制功能则采用软件在NiosⅡ嵌入式系统上实现.最后采用以Altera公司的EP3C25F672作为核心芯片的开发系统,对该算法进行了软、硬件仿真,结果证明采用软、硬件协同处理,能有效地克服JPEG2000在实际应用中存在的速度和灵活性之间的瓶颈,具有计算效率高和芯片利用率高等一系列优点.     

万兆以太网时钟产生电路设计

给出了基于 0 .2 um Ga As PHEMT工艺的 10 GHz单片频率综合器的系统模型、电路结构、性能分析、版图设计以及仿真结果 ,并简单介绍了工艺特点。整个芯片由压控振荡器、分频器、鉴相器以及低通滤波器组成。在 ADS软件下的仿真结果表明 :芯片采用 3 .3 V单电源供电 ,总功耗为 40 0 m W,输出功率为 -15 d Bm,工作频率 9.5 GHz～ 11.0 GHz,相位噪声 -95 d Bc/Hz@1MHz,输出信号的峰峰值抖动约为 2 ps。整个芯片面积为 1.2 5× 1.3 5 mm2 ,适合作为万兆以太网的时钟产生电路     

CMOS宽动态范围的可变增益放大器

采用CMOS工艺,针对超外差结构的无线宽带接收器,提出了一个新结构的可变增益放大器,并对该放大器进行了仿真和测试.测试和仿真结果表明:该放大器能够工作在5 0～6 0 0MHz的频率上,增益为- 2 8～4 2dB ,最大增益的噪声系数为7 6 5dB ,最小增益的IIP3为2 0dBm ,而且具有良好的鲁棒性,在3V的电源电压下,电流消耗只有12mA .     

整数5/3小波变换的VLSI结构设计

在JPEG 2000中,无损图像压缩是采用整数5/3小波变换实现的.JPEG 2000也给出了5/3小波基于提升方法的算法.对提升方法的整数5/3小波变换算法进行了研究,针对二维的变换提出一种VLSI结构.该结构由4个模块构成,模块之间并行运行,模块内部采用流水线技术.对多级变换,级间的运算还可交叉,体现了提升方法的优势,较大地提高了硬件效率.其主要优点是消耗资源少且运算速度高,同时也适用于其他整数小波变换.     

对数跳跃加法器的静态CMOS实现

介绍了一种32位对数跳跃加法器结构.该结构采用EL M超前进位加法器代替进位跳跃结构中的组内串行加法器,同EL M相比节约了30 %的硬件开销.面向该算法,重点对关键单元进行了晶体管级的电路设计.其中的进位结合结构利用L ing算法,采用支路线或电路结构对伪进位产生逻辑进行优化;求和逻辑的设计利用传输管结构,用一级逻辑门实现“与-异或”功能;1.0 μm CMOS工艺实现的32位对数跳跃加法器面积为0 .6 2 mm2 ,采用1μm和0 .2 5 μm工艺参数的关键路径延迟分别为6 ns和0 .8ns,在10 0 MHz下功耗分别为2 3和5 .2 m W.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.