High efficiency 90/spl deg/ silica waveguide bend using an air hole photonic crystal region

We propose the hybrid integration of an air hole photonic crystal (PhC) structure with a high /spl Delta/ (0.75%) single-mode silica waveguide to achieve an ultracompact high efficiency 90/spl deg/ bend for transverse-magnetic polarized light. Diffraction from the periodic boundary between the PhC and silica waveguide regions is shown to seriously degrade the optical efficiency of the bend. A microgenetic algorithm (/spl mu/GA) combined with a two-dimensional finite-difference time-domain method is used to modify the PhC and its boundary layer to suppress this diffraction which in turn maximizes bend efficiency. The final optimized structure has a 99.4% bend efficiency at a wavelength of 1.55 /spl mu/m and occupies an area of only 27 /spl times/ 27 /spl mu/m.     

High-efficiency broad-band transmission through a double-60/spl deg/ bend in a planar photonic Crystal single-line defect waveguide

We present two designs to improve the transmission of a conventional double-60/spl deg/ bend in a single-line defect planar photonic crystal waveguide by locally optimizing the shape and the size of air holes of a photonic crystal lattice at the corners. We fabricate these devices on a silicon-on-insulator substrate and characterized them using tunable laser sources over a wavelength range from /spl lambda/=1.259 /spl mu/m to /spl lambda/=1.641 /spl mu/m. As we show, over a 9% bandwidth, less than 1-dB loss/bend was observed. In order to theoretically validate these experimental results, the three-dimensional finite-difference time-domain simulations are performed and found to agree with the experimental results.     

Improved 60/spl deg/ bend transmission of submicron-width waveguides defined in two-dimensional photonic crystals

We compare quantitatively the transmission properties of various 60/spl deg/ bends carved into a photonic crystal based on a two-dimensional triangular lattice of holes perforating a GaAs-based heterostructure. The bends are inserted into channel waveguides defined by three missing rows in the photonic crystal. Their design is inspired by some ideas from classical integrated optics. We show experimentally that in some cases the transmission of the bent waveguide is fairly high, up to 70%, within a bandwidth of 3%, e.g., 30 nm at 1 /spl mu/m, sufficient to contemplate wavelength-division-multiplexing applications. The observed performance opens the opportunity to implement a variety of optical functions in view of future photonic crystal integrated circuits for which low-loss bends constitute an essential building block.     

A novel approach to the design and implementation of dual-band compact planar 90/spl deg/ branch-line coupler

This paper presents the design of a novel branch-line coupler that can operate at two arbitrary frequencies. The proposed circuit also features compact size and planar structure. Explicit design formulas of the proposed dual-band coupler are analytically derived. Moreover, practical issues such as the realization of branch-line impedance and optimum choice of circuit topologies are addressed. For verification purposes, both simulated and measured results of a microstrip branch-line coupler operating at 900/2000 MHz are included.     

90/spl deg/C continuous-wave operation of 1.83-/spl mu/m vertical-cavity surface-emitting lasers

Excellent lasing performance is demonstrated for a 1.83-/spl mu/m InGaAlAs-InP vertical-cavity surface-emitting laser (VCSEL) utilizing the buried tunnel junction technology. Threshold currents as low as 190 /spl mu/A at 20/spl deg/C and operating temperatures as high as 90/spl deg/C have been measured. These values are the best ones reported so far for long-wavelength VCSELs.     

A CMOS smart temperature sensor with a 3/spl sigma/ inaccuracy of /spl plusmn/0.5/spl deg/C from -50/spl deg/C to 120/spl deg/C

A low-cost temperature sensor with on-chip sigma-delta ADC and digital bus interface was realized in a 0.5 /spl mu/m CMOS process. Substrate PNP transistors are used for temperature sensing and for generating the ADC's reference voltage. To obtain a high initial accuracy in the readout circuitry, chopper amplifiers and dynamic element matching are used. High linearity is obtained by using second-order curvature correction. With these measures, the sensor's temperature error is dominated by spread on the base-emitter voltage of the PNP transistors. This is trimmed after packaging by comparing the sensor's output with the die temperature measured using an extra on-chip calibration transistor. Compared to traditional calibration techniques, this procedure is much faster and therefore reduces production costs. The sensor is accurate to within /spl plusmn/0.5/spl deg/C (3/spl sigma/) from -50/spl deg/C to 120/spl deg/C.     

Precise 90/spl deg/ quadrature current-controlled oscillator tunable between 50-130 MHz

A VLSI continuous time sinusoidal OTA-C quadrature oscillator fabricated in a standard double-poly 0.8 /spl mu/m CMOS process is presented. The oscillator is tunable in the frequency range from 50-130 MHz. The two phases produced by the oscillator show an extremely low phase difference error (less than 2/spl deg/ over the whole frequency range). A novel current mode amplitude control scheme is developed that allows for very small amplitudes. Experimental results are provided.     

A slotted post-wall waveguide array with interdigital structure for 45/spl deg/ linear and dual polarization

This work proposes a dual-polarized planar antenna; two post-wall slotted waveguide arrays with orthogonal 45/spl deg/ linearly-polarized waves interdigitally share the aperture on a single layer substrate. Uniform excitation of the two-dimensional slot array is confirmed by experiment in the 25 GHz band. The isolation between two slot arrays is also investigated in terms of the relative displacement along the radiation waveguide axis in the interdigital structure. The isolation is 33.0 dB when the relative shift of slot position between the two arrays is -0.5/spl lambda//sub g/, while it is only 12.8 dB when there is no shift. The cross-polarization level in the far field is -25.2 dB for a -0.5/spl lambda//sub g/ shift, which is almost equal to that of the isolated single polarization array. It is degraded down to -9.6 dB when there is no shift.     

Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T/sub g/) of >315/spl deg/ C and low coefficient of thermal expansion of <10 ppm/ /spl deg/ C. Maximum process temperatures on the substrates were 250/spl deg/C and 280/spl deg/C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280/spl deg/C have dc characteristics comparable to TFTs made on glass. The stability of the 250/spl deg/C TFTs on clear plastic is approaching that of TFTs made on glass at 300/spl deg/C-350/spl deg/C. TFT characteristics and stability depend only on process temperature and not on substrate type.     

Stable range enhancement in a symmetric confocal two-rod resonator with 90/spl deg/ optical rotator

We propose a method to eliminate the narrow unstable region of a symmetric two-rod resonator with a 90/spl deg/ optical rotator which is used to compensate for thermal birefringence of the laser rod. The narrow unstable region is caused by the difference between the thermal focal lengths of the radial and tangential directions of a laser rod. Using the g-diagram analysis, we find that the narrow unstable region can be removed in the resonator configuration of a symmetric confocal type. We investigate the effect of the distance between two rods of the proposed resonator on the stability and the beam quality.     

Design and fabrication of 180/spl deg/ hybrid ring coupler for applications of MMICs using dielectric-supported air-gapped microstriplines

A 180/spl deg/ hybrid ring coupler has been designed and fabricated to prove the possibility of the fabrication for various passive components at high frequency using newly proposed transmission lines, i.e. dielectric-supported air-gapped microstripline structures.     

45/spl deg/ slanted fibre Bragg grating design with prism coupled holographic exposure

A holographic technique for forming 45/spl deg/ tilted fibre gratings using two 45/spl deg/-90/spl deg/, -45/spl deg/ fused silica prisms is described. The technique reduces fringe distortion due to the lens effects of the fibre during exposure. Details of the experimental system and grating performance are given.     

Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3 /spl mu/m quantum dot lasers between 20 and 90/spl deg/C

Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 mum-long short cavity 1.3 mum p-doped quantum dot lasers. Driving conditions were 25.2 mA_p-p for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90degC     

A precise 90/spl deg/ quadrature OTA-C oscillator tunable in the 50-130-MHz range

We present a very-large-scale integration continuous-time sinusoidal operational transconductance amplifiers quadrature oscillator fabricated in a standard double-poly 0.8-/spl mu/m CMOS process. The oscillator is tunable in the frequency range from 50 to 130 MHz. The two phases produced by the oscillator show a low-quadrature phase error. A novel current-mode amplitude control scheme is developed that allows for very small amplitudes. Stability of the amplitude control loop is studied as well as design considerations for its optimization. Experimental results are provided.     

Arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size based on Si photonic wire waveguides

A miniature arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size consisting of Si photonic wire waveguides was designed using complete modelling in the finite-difference time-domain simulation. The device was fabricated onto a silicon-on-insulator substrate and evaluated in the wavelength range around 1.55 /spl mu/m. The clear demultiplexing characteristics were observed with a channel spacing of 11 nm and a loss of less than 1 dB.     

Stable mode-locked operation up to 80 /spl deg/C from an InGaAs quantum-dot laser

We demonstrate the mode-locked operation of a two-section quantum-dot laser in a broad temperature range. Stable mode-locking was observed at temperatures ranging from 20 /spl deg/C to 70 /spl deg/C, with signal-to-noise ratios well over 20 dB and a -3-dB linewidth smaller than 80 kHz. In the temperature range between 70 /spl deg/C and 80 /spl deg/C, the mode-locking was less stable. It was found that in order to provide stable mode-locked operation with increasing temperature, the reverse bias on the absorber section must be reduced accordingly.     

Broadband 180/spl deg/ bit phase shifter using a /spl lambda//2 coupled line and parallel /spl lambda//8 stubs

In this paper, a broadband 180/spl deg/ bit phase shifter using a new switched-network was presented. The new network is composed of a /spl lambda//2 coupled line and parallel /spl lambda//8 open and short stubs, which are shunted at the edge points of a coupled line, respectively. According to a desired phase shift, it provides a controllable phase dispersive characteristic by the proper determination of Z/sub m/,Z/sub s/, and R values. The 180/spl deg/ bit phase shifter operated at 3 GHz was fabricated and experimented using design graphs which provide the required Z/sub m/,Z/sub s/ values, and I/O match and phase bandwidths. The experimental performances showed broadband characteristics.     

80/spl deg/C continuous-wave operation of 2.01-/spl mu/m wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

Electrically pumped buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers (VCSELs) with self-adjusted lateral current and optical confinement and record emission wavelengths beyond 2 /spl mu/m are presented. Front and back side mirrors are realized using 31.5 epitaxial layer pairs of alternating InGaAs-InAlAs and a dielectric 2.5 pair CaF/sub 2/-a-Si layer stack. The devices show single-mode continuous-wave operation up to heat sink temperatures over 80/spl deg/C. The maximum output power at 20/spl deg/C reaches 0.43 mW, threshold current and voltage are as low as 0.66 mA and 0.73 V, respectively. To reach the long emission wavelength, we use an optimized active region comprising heavily strained quantum wells. High-resolution X-ray diffraction and photoluminescence measurements reveal excellent material quality without relaxation in the quantum wells.