DCS和电解槽槽电压检测系统的数据通信

通过对ECS-100 DCS系统和电解槽电压检测的子系统的硬件方案、软件方案的阐述,利用DCS资源和现代通信技术,解决了离子膜装置的生产数据不能共享的困难,保证了化工生产装装置生产安全,满足工艺管理要求。     

基于PLC的油田计量间现场监控系统

针对油井现场设备控制可靠性低,可维护性差,数据开放性不够、不能共享等问题,文章设计了油田计量间现场监控系统。系统选用西门子S7-200PLC进行现场控制,应用KingView6.55组态软件实现系统组态。采集油田计量间油道的出油压力、温度、流量等数据,并传输到监控中心。通过组态系统动画显示系统实现运动状态和现场数据的实时显示。     

计量评价测试系统设计与实现

针对计量评价测试工作业务流程复杂、样品交接环节多、编制报告繁琐等问题,提出建设一套计量评价测试系统。详细介绍了业务管理子系统、研究所管理子系统、财务管理子系统、查询统计子系统、后台管理子系统的功能,并基于分布式技术实现了3层C/S架构、样品无纸化交接、在线编制报告,从而实现了计量评价测试流程的信息化管理方式,对于同类技术机构具有借鉴意义。     

广播电台业务生产系统互联互通的关键技术与应用实践

互联互通是广播台网内不同功能网、不同生产子系统、不同业务应用间实现安全互联.台网互联互通包含两层含义,一是网间互联,二是业务互通.本文结合宁波电台台网建设现状,就互联各功能子网,互通各生产业务子系统,实现各类数据跨网络、跨平台、跨业务的全程管理及全面共享的项目背景及关键技术作了全面阐述.     

收录、编目与迁移--中央电视台新闻共享系统

安达斯十分荣幸的参与到央视新闻共享系统、媒体资产管理系统之项目中,承担了部份软件系统集成与开发工作.在与央视、和国内外众多知名的软硬件提供商包括索贝公司在内的合作开发过程中,安达斯获益良多.从实践中增加了自主研发软件产品的内涵、从互动中提升了对本领域应用的研发高度:在此,与国内广电同仁分享其中一些技术应用. 在项目中,安达斯参加了三个部分:1、共享系统主控适配子系统;2、自动编目子系统;3、数据迁移与归档管理.可以看出,该三个系统分别是在项目中媒体网络的起始端、元数据始发端与中心部分媒体调度与管理.     

基于物联网技术的智慧计量实验室管理平台

随着电网计量业务智能化升级,传统的计量实验室中,各设备间信息相互孤立,缺乏有效的连接,缺少必要的身份验证,试验、台账数据维护工作量大,已经到了必须升级改造的阶段。本研究依托物联网和大数据等相关技术,基于实验室标准接口规范,经过电子身份认证,将实验室的各类设备（试验设备、智能设备、移动设备）自动化、规范化接入智慧实验室管理平台,实现计量实验室业务数据存储、共享、大数据分析及深化应用。     

电网现场标准化作业管理系统的信息化设计

为了改变目前电网现场作业管理的变电巡检、变电检修试验、输电线路巡捡检修等管理系统各自独立运行,信息不能共享,功能、效率受限,建设和维护成本高的现状,提出了采用B/S+C/S构架模式,将各现场作业管理模块和生产MIS(管理系统)集成为一体的现场作业管理系统的设计方案,做到各子系统和生产MIS软硬资源共享,做到同一数据唯一入口、一处录入多处使用.各子系统设备人员等基础信息来源于生产管理系统,各子系统又是生产管理系统的作业数据、缺陷信息的重要来源.经过研究试用成功和推广应用,目前该系统已在江西电网220 kV及以上变电站全面应用.     

非煤矿山安全综合监测监控系统的研究与实现

非煤矿山井下安全监测监控由井下人员定位、巷道环境监测监控、井下通信联络等多个子系统组成,由于各个子系统标准不够统一,导致各个系统各自运行,信息不能互通,操作繁琐、信息对比不方便,难以进行综合决策判断。系统将非煤矿山井下各个分离的安全监测监控子系统整合起来,消除各个子系统造成的信息孤岛,统一数据信息格式,集中数据管理。实现对矿山井下、井上的统一应急联动、统一决策指挥、统一数据共享与分析,为科学指挥决策提供更加综合全面直观的数据分析。     

传感器管理及方法综述

本文对传感器管理的基本概念、原理及其重要性进行了简述,对传感器管理的基本方法进行了分析与综合,指出了传感器管理方法发展的基本特征和需要进一步研究的问题,并提出了由传感器子系统、数据融合子系统、决策支持子系统和传感器管理子系统构成的数据融合闭环系统控制模式.     

十运会IBC赛事共享系统的实时场记

本文首先简单介绍了IBC赛事共享系统的总体结构、各子系统以及系统流程,接着重点介绍了IBC赛事共享系统中的实时场记部分,并从应用的角度阐述了场记工作的流程及管理.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.