Superconducting resonators and charge qubits: Spectroscopy and quantum operations. Part I

For the past few years, considerable progress has been made in the fabrication of quantum devices using mesoscopic semiconductor elements. These devices can represent the elemental base for a wide class of high-tech devices from supersensitive detectors of an electromagnetic field to reliable sources of single photons and quantum computers. The article reviews the main experimental results obtained to date with the participation of superconducting quantum devices.     

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.     

Comparative studies of noise limitations in superconducting thin-film radiation detectors

We report measurements on the noise limitations of superconducting thin films operating as thermal detectors (bolometers) and as current-dependent detectors. By making measurements in each mode on the same film it is possible to make a comparative study of the noise limitations for both detection mechanisms in the same device. Thin tin films with normal state sheet resistances on the order of 100 Ω per square have been studied. The devices were scribed to produce total normal state resistances on the order of 10 kΩ and were mounted in the vacuum chamber of a demountable tail Dewar so that they were not in direct contact with liquid helium. The resulting bolometers have response times and sensitivities similar to those of Martin and Bloor. The dominant noise mechanisms we have observed appear to be Johnson noise in the thermal mode and 1/f noise in the current mode. These results confirm previous conclusions regarding the sensitivity of these films as radiation detectors.     

Recent Progress in Mid- and Far-Infrared Semiconductor Detectors

The recent developments of semiconductor infrared detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The emphasis is on the GeSi/Si heterojunction infrared photoemission detectors (HIPs), GaAs/AlGaAs quantum well infrared photodetecots (QWIPs), Si, Ge and GaAs blocked impurity band detectors (BIBS), and Si and GaAs homojunction interfacial work-function internal photo-emission (HIWIP) far-infrared (FIR) detectors. The advantages, current status, and potential limitations of these infrared detectors have also been discussed.     

窄禁带半导体的光电跃迁效应

光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。文中阐述了带间光吸收效应的基本规律的发现及其科学意义,介绍了这些规律在碲镉汞红外探测器材料器件设计中的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用。     

Novel silicon high sensitive photonic sensor

Light depended resistors (LDR) or photoresistors are semiconductor devices that are changing resistance under illumination. These devices have many applications in industrial controls: item counters, presence and proximity sensors, flame detectors, photometric devices, etc. If the light falling on the device has energy which is greater than the bandgap of the semiconductor, photons absorbed by the semiconductor excite electron-hole pairs which result in lowering the resistance of the semiconductor. Generally, these devices are made of semiconductors such as CdS or CdSe using a thin film technology, since they have traps and misfits in their atomic structure, leading to high dark current and noise.In this work, we describe a novel approach for a novel family of high sensitive light detectors made of single-crystalline silicon. Basic sensor was built in a flat shape providing lateral electrical transport of excited charged carriers. Simple laboratory methods were used to diffuse impurities on both sides of the sensor. The sample shows high sensitivity due to light intensity variation from dark to strong light (∼96,000 lx). A 30 times variation in the sample resistance was obtained.     

单光子探测器的研究进展

单光子探测器能够探测极微弱光信号, 具有较高的灵敏度, 在民用和国防领域都有广泛的应用。近年来, 随着科学技术的飞速发展, 在传统光电探测器件不断优化和改进的同时, 其它新型光电探测器件也得到了极大发展且取得了重要技术成果。为深入了解单光子探测器的技术发展现状和趋势, 总结了目前具有代表性的单光子探测器在研究现状、技术难点和最新技术突破等方面的关键信息, 分析了光电倍增管和雪崩光电二极管等传统单光子探测器的优势与不足以及之后的技术发展方向, 同时还介绍了超导纳米线单光子探测器和基于新型2维材料的雪崩光电二极管等几类具有良好光电性能和巨大发展潜力的新型单光子探测器, 并对其发展前景进行了展望。     

量子阱太赫兹探测材料设计与生长的研究*

子带跃迁的量子阱结构太赫兹探测器具有响应速度快等特点,有广泛的应用前景,越来越受到研究 人员的关注。以量子力学基本原理,量子阱结构材料光吸收的特性,以及光导型探测器暗电流分析为基础,进行了 量子阱厚度、势垒层Al 含量和量子阱掺杂浓度等参数的AlGaAs/ GaAs 量子阱太赫兹探测材料结构设计,按照优化 后的外延参数进行了材料生长,获得了符合设计要求的探测材料。     

CdS紫外探测器的研究

针对制导等应用领域对紫外探测器的需求,介绍了一种CdS半导体紫外探测器研制过程及取得的进展,叙述了器件的工作原理和制作工艺,并针对器件的响应率及量子效率等性能进行了测试,测试结果表明,该器件在探测波长410 nm的光线时,量子效率最高达到了44.5%。     

窄禁带半导体的光电跃迁效应

光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。文中阐述了带间光吸收效应的基本规律的发现及其科学意义,介绍了这些规律在碲镉汞红外探测器材料器件设计中的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用。     

Si-YBaCuO intermixing and reactive patterning technique

A novel Si-YBaCuO intermixing technique has been developed for patterning YBaCuO superconducting thin films on both insulating oxide substrates (MgO) and semiconductor substrates (Si). The electrical, structural, and interfacial properties of the Si-YBaCuO intermixed system have been studied using resistivity, x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and Auger depth profiling measurements. The study showed that the reaction of Si with YBaCuO and formation of silicon oxides during a high temperature process destroyed superconductivity of the film and created an insulating film. On a MgO substrate, the patterning process was carried out by first patterning a silicon layer using photolithography or laser-direct-writing, followed by the deposition of YBaCuO film and annealing. For a silicon substrate, thin metal layers of Ag and Au were patterned as a buffer mask which defines the YBaCuO structures fabricated thereafter. Micron-sized (2-10 Μm) superconducting structures with zero resistance temperature above 77 K have been demonstrated. This technique has been used to fabricate current controlled HTS switches and interconnects.     

Fourier transform spectrometer studies (300-1000 GHz) of Nb-basedquasi-optical SIS detectors

Three Nb/AlO_x/Nb SIS detectors, designed to operate in the 400-550, 550-700, and 600-750 GHz bands, have been studied in direct detection mode using a Fourier-transform spectrometer. All three detectors were of quasi-optical type and had on-chip-integrated-fixed tuned SIS junctions. The tuning ranges of the detectors were selected to cover the interesting region around the superconducting gap frequency of Nb (about 700 GHz). Measurements show detector responses at frequencies above the gap frequency, i.e., up to ≈920 GHz, and that cooling the detectors to 3.1 K improved the direct detection responses about 15% below 700 GHz and about 50% for frequencies up to 800 GHz, compared to the responses at 4.2 K. The 500 GHz SIS detector was also studied in a 440-520 GHz heterodyne receiver set up. Good agreement between modeled tuning circuit characteristics, tuning range of the mixer and the direct detection response bandwidths were found. However, it is essential that the dispersion of the field penetration depth into the superconductor is included in the modeling of the tuning circuits when the detector is operated at frequencies above the superconducting gap     

InP基应变自组装纳米材料及其光电子器件研究进展

半导体低维结构材料,如量子线(点)材料,由于其特殊的电子结构,在新一代光电子、微电子器件中有着重要的应用价值。本文对应变自组装InP基量子线(点)材料的生长制备、光学和电学特性及其在半导体激光器、红外探测器及其他光电子和微电子器件中的应用进行了综述,指出了目前需要改进的一些方面,并提出了一些相应的解决途径。     

光伏型光电探测器漂移-扩散模型的改进

提出了改进的描述光伏型半导体光电探测器中载流子输运的漂移-扩散模型,该模型能适合更高强度的激光辐照,可以模拟光生载流子的长时间过程。依据该模型,对光伏型探测器进行了模拟计算,得到了激光辐照下探测器的动态响应规律、探测器温升以及材料参数对探测器响应的影响。     

Wide-bandgap compound semiconductors for X- or gamma-ray detectors

Although Ge and Si are currently the major semiconductor materials for nuclear-radiation detectors used in high-resolution nuclear spectroscopy, and will remain so in the foreseeable future, their limitations that hamper their use in field and industrial environments have given the impetus for research into alternative semiconductors that would be suitable for wider areas of application and would operate at room temperature. Requirements are formulated for semiconductors in which to make room-temperature detectors of X- or gamma-rays. A brief overview is given of the work in Russia on such detectors using a wide-bandgap compound semiconductor, namely, CdTe, GaAs, HgI₂, or TlBr. The standard of semiconductor-materials technology is shown to be a key factor in developing this type of detector.     

nBn红外探测器研究进展

nBn红外探测器旨在消除肖特基-里德-霍尔产生复合电流,这将有效降低器件的暗电流并提高工作温度.由于制造工艺的兼容性和晶格匹配的衬底的存在,基于III-V化合物(包括二类超晶格材料)的nBn红外探测器得到了快速发展.通过理论模拟,基于HgCdTe材料的nBn红外探测器也能有效抑制暗电流.然而,去除价带势垒的困难阻碍了H...     

Whatever Happened to Silicon Carbide

Silicon carbide has been used extensively as an abrasive, but only in the last 25 years has its potential as a semiconductor been exploited. The rationale for SiC semiconductor devices is their high temperature performance. Rectifiers, field effect transistors, charged particle detectors, and other devices operate efficiently at temperatures about 800 K.     

GaN基紫外光探测器研究进展

介绍了不同类型的GaN基半导体光电探测器的结构和性能,回顾了其发展历史,并且综述了GaN基紫外光电探测器的研究新进展.     

直扩系统时变单音干扰抑制的新方法

针对直接序列扩频通信系统中的时变单音干扰,提出了一种频域干扰估计时域对消的新方法。在系统中,将干扰信道建模为时变衰落信道。该算法首先在频域对时变单音干扰信号参数进行估计,然后对时变单音干扰进行重构和对消,推导了理论误码率公式。理论分析和仿真结果表明,该算法性能由干扰功率和多普勒频移等因素决定。在频率选择性衰落信道下,当信噪比为20dB,扩频增益为16,干扰信道多普勒频移为100Hz时,该算法可以抑制20dB(干信比)的单音干扰。