低损耗射频SAW滤波器的设计

采用42°Y-XLiTaO3基片,利用耦合模(COM)模型和P矩阵级联的方法对低损耗声表面波(SAW)梯形滤波器进行仿真设计。通过分析SiO2厚度对滤波器中心频率偏移的影响、建立等效电路模型对封装进行仿真,成功地设计制作了一款中心频率为1 575MHz,带外抑制大于20dB,最低插入损耗为-1.2dB的四级SAW梯形滤波器,测试结果与仿真结果相吻合。     

一种扇形结构小型化中频声表面波滤波器

该文研究了一种扇形结构的声表面波设计技术并分析了其工作原理及加权方式,为某电台接收机设计并制作了一款中心频率为374 MHz、-3 dB带宽大于17 MHz、插入损耗小于9.5 dB、通带波纹小于1 dB、带外抑制大于40 dB(10~352 MHz)的器件。将该器件封装在表贴SMD3838小型外壳中,其满足性能指标。结果表明,该器件首次突破了扇形结构中频声表面波滤波器在表贴SMD3838封装的研制,表明扇形结构声表面波滤波器产品实现小型化的可行性。     

小型化双通带声表滤波器设计研究

针对小型化双通带声表面波(SAW)滤波器的需求背景,对两端口、两通带的SAW滤波器的设计技术展开研究。通过搭建包含两组耦合模（COM）参数的双通带SAW滤波器声电协同仿真平台,分析优化滤波器性能,成功研制出CSP2520封装的双通带SAW滤波器,其中心频率分别为1 995 MHz和2 185 MHz,通带带宽均为40 MHz,插入损耗小于3 dB,通带间隔离度大于30 dB。测试与仿真结果基本一致。     

基于漏纵波模式的高频宽带低插损滤波器设计

采用常规的瑞利声表面波设计低插损、大带宽的高频声表滤波器,难以满足设计要求。该文设计了一种基于多层膜结构的漏纵波(LLSAW)的高频宽带低损耗声表面波(SAW)滤波器。确定了激发LLSAW的波导结构,建立器件的二维理论模型;研究了电极各项参数对杂散的影响,在此基础上对电极参数进行了优化设计。研究发现,将串联谐振器的反射栅对数设置为6时,可有效抑制通带内的杂散。设计了镜像T型及镜像π型LLSAW结构滤波器,并进行性能比较分析。结果表明,镜像T型结构更能抑制杂散响应,设计的镜像T型结构LLSAW滤波器的中心频率为3 545 MHz,插入损耗为-1.416 dB,-3 dB带宽为274 MHz,带外抑制大于-30 dB。     

基于ADS的声表面波单端对谐振器建模

声表面波(SAW)滤波器的设计需对单端对谐振器建模。该文提出了一种新的基于ADS线性矩阵模型的声表面波单端对谐振器模型,并给出了主要参数的推导过程。借助新模型成功设计了一个中心频率为1GHz、带宽为30MHz的声表面波带通滤波器,其插入损耗小于4dB,带外抑制大于30dB。设计过程表明,采用新模型设计声表面波滤波器可做到操作性强、简单、快捷。     

960 MHz同轴介质谐振器滤波器的研制

研制了用四个高Q值介质同轴谐振器构成的带通滤波器,谐振器之间的耦合通过陶瓷基片上的电容实现,讨论了影响谐振器插入损耗的主要因素。结果表明,该四级式低损耗介质同轴谐振器滤波器中心频率f0为960MHz,插入损耗小于3.0dB,能满足设计要求。     

低损耗贴片式独块状介质滤波器的设计与制作

设计制作了一种低损耗、贴片式(SMD)独块状的八级介质滤波器。该滤波器采用切比雪夫响应的方法设计,利用εr为45的高Q值独块状微波陶瓷制作,谐振器之间使用电容和电容加载耦合。制备出了中心频率为897.5MHz、插入损耗小于2.5 dB的介质滤波器。测试结果表明,该滤波器满足800~1 500 MHz频率范围通讯基站要求。     

用于频率合成的声表面波滤波器

介绍了几组用于扩频系统的声表面波滤波器的设计、制作和实验结果.器件频率为95～350MHz.插入损耗为9～24dB.阻带抑制优于45dB.     

158MHz GaAs声表面波固定延迟线的研制

报道了GaAs声表面波(SAW)固定延迟线的设计方法和SAW器件金属剥离制造新工艺.研制出GaAs SAW延迟线,典型参数为：中心频率158MHz,插入损耗低于55dB,延迟时间1.5μs.     

基于COM参数提取技术设计SAW梯形滤波器

与耦合谐振滤波器(CRF)相比,声表面波(SAW)梯形滤波器具有插入损耗小,功率容量大和芯片尺寸小的优点。该文从COM参数提取出发,结合COM模型和P矩阵级联的方法,设计出一个中心频率约为350MHz,插入损耗仅有1.5 dB的三极SAW梯形滤波器。从样品的测试结果发现,这种基于COM模型的阻抗元滤波器(IEF)的设计思路是正确可行的。     

超宽带低损耗SAW滤波器的优化设计

该文介绍了基于大机电耦合系数乐甫波模式的超宽带低损耗声表滤波器的开发,基底为15°YX-LiNbO3晶体和铜电极。设计采用修正的耦合模模型进行精确仿真以及模拟退火算法进行谐振器参数的优化。通过假指电极宽度/长度加权来抑制横向模式谐振造成的寄生响应,通过在滤波器表面涂覆黏性膜来有效抑制瑞利波模式造成的寄生凹坑,最终制作出一款中心频率约620 MHz,插损0.94 dB,-1 dB相对带宽14.9%,-3 dB相对带宽18.3%,带外抑制大于40 dB性能较优良的器件。     

Reference SAW oscillator on quartz-on-silicon (QoS) wafer forpolylithic integration of true single chip radio

The authors present an electro-acoustic circuit fabricated on quartz directly bonded on the processed silicon wafer (QoS), which allows us to polylithically integrate high precision passives with integrated circuits. We first fabricated a prototype SAW resonator and oscillator on thick QoS. The SAW resonator on QoS shows Q about 10,000 and 11 dB insertion loss at 289 MHz, and SAW oscillator on QoS shows phase noise of as small as -120 dBc at 100 kHz offset, demonstrating the feasibility of true single chip radio     

A novel ultra-compact resonator for Superconducting thin-film filters

This paper proposes a novel thin-film resonator structure, which combines the microstrip resonator and the coplanar resonator to form an integrated resonator. This resonator structure has an extremely compact size, as compared to the thin-film resonator structures from the literature, and its resonant frequency was shown theoretically to be less sensitive to, or even insensitive to, the thickness of the substrate. An eight-pole quasi-elliptic filter based on this novel resonator was designed. The exact filter layout was simulated and optimized by full-wave electromagnetic simulation using IE3D software. The full-wave simulated filter response was in good agreement with the theoretical filter response. A filter was fabricated on a double-sided YBa/sub 2/Cu/sub 3/O/sub 7/ thin film epitaxially grown on a 2-in-diameter MgO wafer. The measured filter response showed a bandwidth of 1.5 MHz and a center frequency of 850.3 MHz at 78 K. The insertion loss at the passband center was 1 dB, corresponding to a filter Q of 28 000. Steep rejection slopes were obtained at the band edges and rejections reached over 70 dB in approximately 300 kHz from the passband edges. No pronounced changes were observed for input power levels between -20-0 dBm, indicating a relatively high power-handling capability of the filter.     

A 12-Pole Narrowband Highly Selective High-Temperature Superconducting Filter for the Application in the Third-Generation Wireless Communications

An ultra-selective high-temperature superconducting bandpass filter was designed and fabricated to satisfy the demands of the third-generation wireless communications. This filter was designed to have 12-pole quasi-elliptic response with 4.68-MHz bandwidth in the third-generation communications band (a fractional bandwidth of 0.0023). Full-wave simulations were conducted by using Sonnet software. A novel, compact, and low radiation resonator with a high-quality (Q) factor value was developed to reduce the parasitical coupling. In order to satisfy the demand of high band-edge steepness, three pairs of transmission zeros at finite frequencies were introduced in the cascaded quadruplet coupling structure. The filter was fabricated on a 2-in-diameter 0.43-mm-thick sapphire wafer with double-sided YBCO films. The measurements showed that the passband center frequency (f₀) of the filter is 2.038 GHz at 67 K with a midband insertion loss of 0.67 dB and the return loss better than 15 dB. The measured response of the filter also exhibited ultra-high band-edge steepness of 140-220 dB/MHz. Better than 60 dB of out-of-band rejections for frequencies very close to the band edge (|f-f₀|>2.7 MHz), better than 90 dB at frequencies 7.5 MHz away from the center frequency and up to 100 dB of wideband rejections were achieved     

一种宽带低损耗声表面波滤波器

阐述了一种利用纵向耦合双模制作宽带低损耗声表面波滤波器的方法，给出了理论计算方法和计算机模拟结果，最后给出了制作中心频率为４５３ＭＨｚ的声表面波滤波器实验结果，插入损耗为１．９ｄＢ，１ｄＢ带宽为６．６６ＭＨｚ，远端带外抑制大于４５ｄＢ。     

Frequency trimming for high-frequency SAW device using ultraviolet light

A new technique for frequency trimming of surface-acoustic-wave (SAW) devices is demonstrated using ultraviolet light. Irradiation by ultraviolet light of a very thin SiO2 film which is fabricated on a quartz substrate makes it possible to adjust the operation frequency within an accuracy of better than ±10 kHz at 900 MHz with an insertion loss increase of less than 1 dB. This technique is applied successfully to a 668 MHz SAW resonator.     

低插损极窄带声表面波滤波器设计

利用集总参数等效电路模型计算了声表面波双模耦合谐振滤波器的频响．通过改变谐振器各个参量使滤波器指标满足要求．在ＳＴ石英基片上成功研制出中心频率２２８ＭＨｚ，△ｆ－３ｄＢ＝１５０ｋＨｚ，插损为３ｄＢ，阻带抑制小于－５０ｄＢ的铁路专用寻呼机用滤波器。理论计算与实验结果一致。