基于WO3和NiOx的单基片全无机智能窗器件的快速制备及其性能的研究

介绍了利用磁控溅射和一种液氮冷却装置,制备非晶态WO3薄膜、非晶态LiNbO3薄膜和纳米微晶态NiOx薄膜的有效方法.进而,使用这种液氮冷却装置,采用全程基片冷却方法,制备了单基片无机全固态智能窗--G│ITO│NiOx│LiNbO3│WO3│ITO器件.实验结果表明,在400～800nm的可见光范围内,该器件经过1000次循环后,它的漂白态透射率为63.0%,而着色态透射率为10.6%,这一初步工作表明,基片冷却方法应该是制备有优异性能的无机全固态电致变色智能窗的有效方法.     

磁控溅射基片低温冷却法制备NiOx纳米微晶薄膜

利用自行设计的基片液氮低温冷却装置,用金属Ni靶在Ar O2气氛反应条件下,利用磁控溅射制备纳米微晶结构NiOx膜的方法,薄膜的XRD谱和扫描电子显微图像(SEM)表明,该方法实现了在溅射参数完全相同的条件,纳米NiOx薄膜结构连续可控、可调节.     

中频磁控溅射NiO_x电致变色薄膜(英文)

采用中频孪生非平衡磁控溅射技术,制备了纳米晶结构NiOx电致变色薄膜。利用原子力显微镜、掠射X射线衍射、电化学设备、紫外分光光度计等测试手段分析薄膜结构及电致变色特性。结果表明:室温沉积获得表面质地均匀的NiOx薄膜;在±3V致色电压下,薄膜电致变色性能优异,对可见光透过率调制范围达30%以上,但薄膜寿命低。获得的薄膜为结构疏松的纳米晶结构,易于离子的注入和抽取,变色性能优异,但易发生Li+不可逆注入,薄膜寿命低。     

纳米晶结构NiOx薄膜Li+致色性能研究

采用中频孪生非半衡磁控溅射方法制备了纳米晶结构NiOx电致变色薄膜.原子力显微镜(AFM)、掠入射X射线衍射(GID)、X射线反射(XRR)分析薄膜结构、形貌及薄膜厚度;利用电化学设备、紫外分光光度计等手段测试薄膜循环伏安及光谱特性.结果表明:沉积获得NiOx薄膜质地均匀,晶粒尺寸约为4.5 nm,薄膜表面粗糙度Ra=1.659 nm;以Li 离子为致色粒子,厚度60nm的NiOx薄膜在±3 V的高驱动电压下薄膜对可见光透过率凋制范围达30%以七,电致变色性能较好.     

射频溅射制备氧化镍电致变色薄膜的研究

采用射频反应磁控溅射工艺，以纯镍靶为靶材，在SnO2玻璃上制备电致变色NiOx薄膜。通过对薄膜X射线衍射（XRD）、X光电子能谱（XPS）、扫描隧道显微镜（STM）、循环伏安曲线及可见光透过率的测定，探讨了NiOx薄膜的电致变色性能和微观结构之间的关系，研究了热处理过程中的结构变化和表面形貌。测试表明该氧化镍薄膜具有良好的电致变色性能和阳极着色效应，以及较高的使用寿命。     

基于WO3/NiOx膜系的固态电致变色器件研究

氧化钨和氧化镍是目前研究最多、应用最广的两种电致变色材料.本文详细地介绍了本实验室射频溅射WO3和NiOx薄膜的制备和性能以及以它们为基的夹层式固态电致变色器件的制作和性能.     

Ni掺杂WOx薄膜的电致变色性能

采用磁控溅射工艺,以纯钨和纯镍为靶材在ITO玻璃上制备Ni掺杂WOx电致变色薄膜,研究了Ni掺杂对WOx薄膜电致变色性能和微观结构的影响机理.实验结果表明:均匀掺杂少量的Ni可改变WOx薄膜内部的缺陷分布及结构,提高薄膜的电致变色性能.XRD分析表明,掺杂后的WOx:Ni薄膜为非晶态;XPS分析表明:WOx:Ni薄膜中的Ni为Ni2 .     

基底温度对NiOx薄膜性质的影响及其电致变色机理研究

摘要采用磁控溅射法在不同基底温度的条件下制备NiOx薄膜。对制备的薄膜采用XRD、SEM、Raman、XPS、可见光分光光度计及循环伏安曲线等测试手段进行对比分析。结果表明，在低温条件下制备的NiOx薄膜比常温沉积的薄膜会提供更多的Ni^2＋离子参与变色反应，同时薄膜中疏松的孔洞有利于离子进出。SEM图中可以看出液氮流量越大，温度越低则晶粒越小，会造成沉积组织明显疏松，这些孔隙非常有利于H^＋的拉入抽出。通过Raman测试发现，低温沉积的薄膜可以提供更多的Ni^2＋空位。XPS测试发现NiOx薄膜在KOH溶液中的变色是由H^＋引起的，反应机理为：Ni（OH）2←→＋NiOOH＋H^＋＋e^-。循环伏安测试发现173K条件下制备的NiOx薄膜（η=38．2cm^2／C，λ=550nm）比室温制备的NiOx薄膜（η=16．3cm^2／c，λ=550m）有更高的着色系数，表现出更好的变色效率。     

电子束蒸发制备氧化钨、氧化镍薄膜的电致变色性能

电致变色(EC)材料在外加电压作用下能可逆地改变其光学性能.其中氧化钨与氧化镍是典型的电致变色用材料.本文用电子束蒸发的方法在ITO玻璃基片上制备了此两种薄膜,研究了热处理工艺对薄膜结构与电致变色性能的影响.电致变色性能由电化学方法测试.封装的半固态智能窗器件具有很好的电致变色性能.     

镁镍功能薄膜的制备及电致变色性能的研究

采用恒电位法在铜基片上沉积出镁一镍薄膜,采用循环伏安法研究了N-N二甲基甲酰胺溶液中Mg2 、Ni2 的电化学行为,并通过反射法对薄膜的电致变色性能进行了表征.电致变色前后,镀层薄膜的颜色及在可见光范围内的透光和反射光的能力表现出很大的差别,显示出良好的电致变色性能,而且此过程具有较好的重复性.     

Nanostructured nickel oxide films prepared by chemical vapor deposition and their electrochromic properties

The influence of the deposition conditions on the structural features and electrochromic properties of nickel oxide (NiO) films prepared by chemical vapor deposition has been investigated. NiO films have been prepared on fluorine doped tin oxide (FTO) coated glass substrates from nickel-acetylacetonate precursor and their electrochromic properties have been studied by cyclic voltammetry in a 0.1 M KOH solution at room temperature. Films exhibiting only the NiO phase were obtained at deposition temperatures higher than 450 degrees C in a wide range of reactor pressures (0.13 to 66.6 kPa). Particularly, NiO films prepared at 500-550 degrees C from 0.13 to 53.3 kPa are transparent in nature and exhibit a crystallite size varying from 10 to 60 nm. An appreciable anodic electrochromic change from transparent to black coloured resulted from a very porous surface morphology and film thickness of about 3.5 microm. The electrochromic change was maintained over 3000 switching cycles. Nanostructured 3.5 microm-thick NiO films showed a maximum difference in optical transmittance of about 40% in the near-infrared region. These results make the nanostructured NiO films comparables with those prepared by other deposition techniques.     

Electrochromic and photoelectrochemical behavior of thin WO3 films prepared from quantized colloidal particles

The electrochromic, photochromic and photoelectrochemical properties of thin semiconductor WO₃ films, prepared from quantum-size colloids, have been examined. These films have been found to exhibit reversible electrochromic and photochromic behavior (blue coloration). The trapped electrons in the particulate films are thought to be the major species responsible for the blue coloration. The photoelectrochemical measurements have shown a very low conversion efficiency of WO₃ particulate films. This is most probably due to the efficient trapping of electrons by the lattice defects in the film.     

WO3电致变色薄膜制备过程中光学膜厚测量监控技术的研究

采用真空电子束蒸发方法制备WO3电致变色薄膜过程中，利用极值法光学膜厚测量技术监控薄膜的光学特性，对不同光学膜厚的WO3薄膜的原始态、着色态和退色态的光谱特性进行了对比分析。测试采用二电极恒电压方法，用分光光度计实时测量透过率的变化。结果证明以ITO玻璃作为比较片，极值法监控薄膜光学膜厚，当反射率达到第一极小值，即透过率达到第一极大值时，WO3薄膜得到最好的综合电致变色特性。     

WO3薄膜制备及其电致变色性能研究

采用直流反应磁控溅射方法在室温下制备WO3薄膜。研究溅射功率对WO3薄膜结构及电致变色性能的影响规律,考察退火后WO3薄膜的结构演变及电致变色性能变化。结果表明溅射功率为270W时薄膜表现出较好的电致变色性能,其调制幅度达78.5%,着色时间为9s,褪色时间为3.2s。将该功率下制备的WO3薄膜进行退火处理,其结构由非晶态转变为晶态,但调制幅度、响应时间特性都发生一定程度的退化。非晶态WO3薄膜相比晶态结构具有更快的响应时间和更宽的调制幅度,但晶态薄膜具有更好的循环稳定性。     

WO3薄膜的磁控溅射法制备及电致变色性能

采用直流反应磁控溅射制备了具有优异电致变色性能的WO3薄膜。通过对成膜参数的调控,实现了低功率和短溅射时间的制膜制度,获得了较宽的工艺范围。通过X射线衍射仪、场发射扫描电子显微镜、光学轮廓仪、电化学工作站、紫外-可见-红外分光光度计研究了薄膜的物相、微观结构、厚度、电致变色性能。研究表明:在溅射功率为50 W,溅射压强为2.0 Pa,反应气体流量为20 sccm时所制得的薄膜性能最为优越。所制备薄膜具有较短的变色响应时间和大幅度的变色调制幅度,其对可见光变色调制幅度达到80%。     

四元掺杂电致变色薄膜材料的制备及其性能的研究

用溶胶 凝胶法首次制备了组分为 WO3、TiO2、CrO3、PEO的四元掺杂电致变色薄膜材料,得到了较佳的组分配比,用 TG DTA,XRD 研究薄膜材料的结构变化,推断出最佳热处理温度。循环伏安和可见光透过率测试表明该薄膜材料有较好的电化学性能和阴极着色效应,可以作为电致变色器件中的阴极电致变色层薄膜材料。     

Magnetic properties of immiscible Co-Ag and Ni-Ag thin films prepared by co-sputtering

Magnetic properties of immiscible Co-Ag and Ni-Ag thin films prepared by co-sputtering have been investigated. Saturation magnetizations of the films decreased linearly with increasing Ag concentration. Although the coercivity of Ni-Ag thin film does not vary with addition of Ag, the coercivity of Co-Ag thin film rises to reach a maximum at 41% Ag. The coercivity of Co-41% Ag thin film increases with annealing over 250° C. The thin films all have a fine grain structure. The average grain diameters of Co-Ag thin films and their coercivities increase with annealing. Moreover, it was found that the coercivity and average grain diameter have a linear relation. Therefore, as one reason for a coercivity increase with annealing, it is thought that the phenomenon is caused by the growth of Co grains in the film.     

Electrochromic performance of hybrid tungsten oxide films with multiwalled-CNT additions

In this study, tungsten oxide films were prepared by sol–gel technique. Various amounts of multiwalled carbon nanotubes (MWCNTs) were added during sol–gel process to obtain hybrid WO₃/MWCNT films. The original and hybrid films were characterized by thermogravimetric analysis, X-ray diffraction analysis, and scanning electron microscopy analysis, whereas the electrochromic performance was evaluated by measuring changes in the optical transmittance caused by potentiostatic charge–discharge intercalation. The influence on the structure and properties of tungsten oxide film due to MWCNT addition was also investigated. The results showed that all of the films were amorphous and exhibited porous microstructure. The electrochromic performance of pristine WO₃ film was improved by adding MWCNTs that served as a template for the growth of WO₃ and resulted in more porous microstructure. The hybrid tungsten oxide films with 0.1 wt.% MWCNT addition exhibited the best electrochromic performance.     

电致变色纳米氧化镍薄膜的溶胶-凝胶法制备与表征

以无水氯化镍、乙醇为前驱液,加入适量的丁醇和柠檬酸为稳定剂,通过回流、水解得到稳定的溶胶;采用浸渍-提拉的方法在ITO导电玻璃上形成均匀的膜层;分析了溶胶制备中加水量的影响;研究了热处理温度对制备膜层的结构、光透过率的影响;对经过不同处理的膜层进行X射线衍射、透射电子显微镜、扫描电子显微镜、热重分析等研究表明:在空气中加热到350℃、保温30min薄膜分解为稳定的具有立方结构的NiO纳米晶;以氢氧化钾水溶液为电解质的循环伏安、电致变色实验结果表明制备的纳米氧化镍薄膜具有良好的电致变色特性.     

氧化镍及氧化钨薄膜电致变色机制的研究

通过ZrO_2膜层与NiOx，WOx膜层的不同组合，在液态电解质下，测得不同电致变色膜系的电化学特性及相应着、脱色状态的光透射性能。证明了ZrO2膜层具有导通离子而隔断电子的离子导体层特性，并对NiOx膜层的变色机制进行了探讨。用X射线衍射方法对不同状态下NiOx，WOx薄膜的物相分析表明：电致变色反应中的阳离子注入膜层，使薄膜向有序化排列变化，共产生晶格类型的转变。