共查询到19条相似文献,搜索用时 71 毫秒
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采用射频磁控溅射法在氧氩比为0.2的混合气氛中,分别在室温、100℃、200℃、250℃、300℃、350℃和400℃温度下,在P-Si(100)衬底上制备了HfO2薄膜,并用SEM、XRD和AFM研究了衬底温度与薄膜沉积速率对微结构的影响.结果表明:随着衬底温度的增加,薄膜沉积速率呈减小趋势.室温沉积的HfO2薄膜为非晶态,当衬底温度高于100℃,薄膜出现单斜晶相,随着衬底温度继续增加,(111)择优取向更加明显,晶粒尺寸增大,薄膜表面粗糙度减小. 相似文献
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利用射频磁控溅射镀膜的方法,在c面蓝宝石、石英玻璃和载破片衬底上成功制备了ZnO薄膜。用x射线衍射和扫描电子显微镜进行了结构分析并观察了样品的表面形貌。结果表明:制备的ZnO薄膜具有良好的C轴择优取向结晶度,并在石英玻璃和载玻片衬底上的ZnO薄膜表面发现了[101]取向的“米粒状”晶粒。 相似文献
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衬底温度对磁控溅射法制备ZnO薄膜结构及光学特性的影响 总被引:1,自引:0,他引:1
采用射频反应磁控溅射法在玻璃衬底上制备了具有c轴高择优取向的ZnO薄膜,利用X射线衍射仪、扫描探针显微镜及紫外分光光度计研究了生长温度对ZnO薄膜的结构及光学吸收和透射特性的影响.结果表明,合适的衬底温度有利于提高ZnO薄膜的结晶质量;薄膜在紫外区显示出较强的光吸收,在可见光区的平均透过率达到90%以上,且随着衬底温度的升高,薄膜的光学带隙减小、吸收边红移.采用量子限域模型对薄膜的光学带隙作了相应的理论计算,计算结果与实验值符合得较好. 相似文献
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衬底温度对直流磁控溅射法沉积ZnO∶Ti薄膜性能的影响 总被引:1,自引:1,他引:0
利用直流磁控溅射工艺,在石英玻璃衬底上沉积出了具有高度C轴择优取向的掺Ti氧化锌(ZnO∶Ti,TZO)透明导电薄膜。研究了衬底温度对TZO薄膜应力、结构和光电性能的影响。结果表明,衬底温度对TZO薄膜的结构、应力和电阻率有重要影响。TZO薄膜为六角纤锌矿结构的多晶薄膜。在衬底温度为100℃时,实验获得的TZO薄膜电阻率具有最小值2.95×10-4Ω.cm,400℃时薄膜出现孪晶,随着温度的升高,薄膜应力具有减小的趋势。实验制备的TZO薄膜附着性能良好,可见光区平均透过率都超过91%。 相似文献
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衬底温度对低功率直流磁控溅射ZnO薄膜特性的影响 总被引:2,自引:0,他引:2
采用低功率直流反应磁控溅射法,在Si衬底上成功制备出了具有高c轴择优取向的ZnO薄膜,利用X射线衍射仪、荧光分光光度计研究了沉积温度对ZnO薄膜微观结构及光致发光特性的影响.结果表明,合适的衬底温度有利于提高ZnO薄膜结晶质量;在室温下测量样品的光致发光谱(PL),观察到波长位于440nm左右和485nm左右的蓝色发光峰及527nm左右微弱的绿光峰,随衬底温度升高,样品的PL谱中蓝光强度都明显增大,低功率溅射对其蓝光发射具有很重要的影响.综合分析得出440nm左右的蓝光发射应与Zni有关,485nm附近的蓝光发射是由于氧空位形成的深施主能级上电子跃迁到价带顶的结果,而527nm左右的较弱的绿光发射主要来源于导带底到氧错位缺陷能级的跃迁.生长温度主要是通过改变薄膜中缺陷种类及浓度而影响着ZnO薄膜的发光特性的. 相似文献
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采用射频反应磁控溅射法以不同的氧氩比在玻璃衬底上制备了ZnO薄膜,并对薄膜进行了退火处理;利用X射线衍射仪(XRD)和原子力显微镜(AFM)分别对薄膜的物相组成和表面形貌进行了分析,利用荧光分光光度计对ZnO薄膜的室温光致发光(PL)谱进行了测试。结果表明:当氧氩气体积比为7∶5时,所制备的ZnO薄膜晶粒细小均匀,薄膜结晶质量最好;ZnO薄膜具有紫光、蓝光和绿光三个发光峰,随着氧氩比的增加,蓝光的发射强度增强,而紫光和绿光的发射强度先增强后减弱,当氧氩气体积比为7∶5时紫光和绿光的发射强度最强。 相似文献
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采用射频磁控溅射方法在玻璃和硅(100)衬底上制备了不同氧分压的Cu掺杂ZnO(ZnO∶Cu)薄膜。利用X射线衍射(XRD)、原子力显微镜(AFM)和光致荧光发光(PL)等表征技术,研究了衬底和氧分压对ZnO∶Cu薄膜的结晶性能和光学特性的影响。结果显示薄膜沉积在Si衬底上比玻璃衬底上有更好c轴择优取向,两种衬底上沉积的薄膜有相同的氧分压结晶规律,且在氧氩比为10∶10时,薄膜c轴取向同时达到最好。通过对光致发光的研究表明,在低氧环境时玻璃衬底较容易制得好的发光薄膜,可在富氧环境时Si衬底上制得的薄膜发光性能较好。 相似文献
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Effect of substrate temperature on the structure and optical properties of ZnO thin films deposited by reactive rf magnetron sputtering 总被引:3,自引:0,他引:3
Zinc Oxide films were deposited on quartz substrates by reactive rf magnetron sputtering of zinc target. The effect of substrate temperature on the crystallinity and band edge luminescence has been studied. The films deposited at 300 °C exhibited the strongest c-axis orientation. AFM and Raman studies indicated that the films deposited at 600 °C possess better overall crystallinity with reduction of optically active defects, leading to strong and narrow PL emission. 相似文献
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Jinzhong Wang Vincent Sallet Ana M. Botelho do Rego Rodrigo Martins 《Thin solid films》2007,515(24):8785-8788
Nitrogen-doped ZnO films were deposited by RF magnetron sputtering in 75% of N2 / (Ar + N2) gas atmosphere. The influence of substrate temperature ranging from room temperature (RT) to 300 °C was analyzed by X-ray diffractometry (XRD), spectrophotometry, X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectrometry (SIMS) and Hall measurements setup. The XRD studies confirmed the hexagonal ZnO structure and showed that the crystallinity of these films increased with increasing substrate temperature (Ts). The optical studies indicate the average visible transmittance in the wavelength ranging 500-800 nm increases with increasing Ts. A minimum transmittance (9.84%) obtained for the films deposited at RT increased with increasing Ts to a maximum of 88.59% at 300 °C (500-800 nm). Furthermore, it was understood that the band gap widens with increasing Ts from 1.99 eV (RT) to 3.30 eV (250 °C). Compositional analyses (XPS and SIMS) confirmed the nitrogen (N) incorporation into the ZnO films and its decreasing concentration with increasing Ts. The negative sign of Hall coefficients confirmed the n-type conducting. 相似文献
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I. Banerjee Neelam Kumari Mukesh Kumar A.B. Panda P.K. Barhai 《Thin solid films》2010,518(24):7240-7244
Nano structured carbon nitride thin films were deposited at different RF powers in the range of 50 W to 225 W and constant gas ratio of (argon: nitrogen) Ar:N2 by RF magnetron sputtering. The atomic percentage of Nitrogen: Carbon (N/C) content and impedance of the films increased from 14.36% to 22.31% and 9 × 10−1 Ω to 7 × 105 Ω respectively with increase in RF power. The hardness of the deposited films increased from 3.12 GPa to 13.12 GPa. The increase in sp3 hybridized C-N sites and decrease of grain size with increase in RF power is responsible for such variation of observed mechanical and electrical properties. 相似文献
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Microstructure and hydrophilicity of nano-titanium dioxide (TiO2) thin films, deposited by radio frequency magnetron sputtering, annealed at different temperatures, were studied by field emission scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and water contact angle methods. It is found that the crystal phase transforms from amorphous to rutile structure with increase of annealing temperature from room temperature to 800 °C. It is also indicated that the organic contaminants on the surface of the films can be removed and the oxygen vacancies can be reduced by the annealing treatment. Annealed at the temperature below 300 °C, amorphous TiO2 thin films show rather poor hydrophilicity, and annealed at the temperature range from 400 to 650 °C, the super hydrophilicity anatase of TiO2 thin films can be observed. However, when the annealing temperature reaches 800 °C, the hydrophilicity of the films declines mainly derived from the appearance of rutile. 相似文献
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Study on ZnO thin films deposited on sol-gel grown ZnO buffer by RF magnetron sputtering 总被引:1,自引:0,他引:1
ZnO thin films with preferential C-orientation and dense microstructure have been prepared using RF magnetron sputtering method by the insertion of a sol-gel grown ZnO buffer layer. The XRD results show that the C-orientation of the film deposited on ZnO buffer is obviously better than that deposited directly on lime-glass substrate. With an increase of the RF power from 100 to 380 W, C-orientation of the films with ZnO buffer improves and the grain size increases. When the RF power equals 550 W, the orientation of the film changes to (1 0 0) and the grain size decreases. The crystalline and microstructure quality of the films can be improved after annealing, however, the grain size is not much dependent on the annealing temperature in the range of 560-610 °C. 相似文献