A Four‐Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non‐return to zero operation with 12 dB extinction ratio is obtained. A four‐channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.     

MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region

In this letter, we report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 /spl mu/m, which are red-shifted from the material gain peak wavelength (/spl lambda/=1.05 /spl mu/m) by 100, 200, and 300 /spl Aring/, respectively. The /spl lambda/=1.06-/spl mu/m device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the /spl lambda/=1.08 /spl mu/m device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet. The /spl lambda/=1.06-, 1.07-, and 1.08-/spl mu/m device exhibits an extinction ratio of /spl ges/20 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively.     

Optical coupling analysis of dual-waveguide structure for monolithic integration of photonic devices

We proposed the dual-waveguide structure (DWS) with spot size converters and demonstrated the monolithic integration of both photodetector (PD) and electroabsorption modulator (EAM) based on the DWS. The coupling loss between the device facet and a lensed fiber was as small as 2.13 dB. The responsivity of PD and the extinction ratio of EAM were 0.58 A/W and 20 dB at -4 V/sub dc/, respectively. From the optical coupling analysis, it was proved that the dual-waveguide scheme provided one of the best solutions for the monolithic integration of optoelectronic devices.     

半导体激光器电吸收调制器和双波导模斑转换器的单片集成

报道了1.6μm的半导体激光器和电吸收调制器以及双波导模斑转换器的单片集成器件.该器件具有良好的单横模特性和准单纵模特性(边模抑制比达25.6dB),3dB调制带宽为15GHz,直流消光比为16.2dB,远场发散角为7.3°×18.0°,和单模光纤的耦合效率达3.0dB.     

10Gb/s EML Module Based on Identical Epitaxial Layer Scheme

A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at －2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 1e－12 after transmission through 35km single mode fiber.     

基于同一外延层结构的10Gb/s单片集成光发射模块

利用同一外延层集成工艺方法制作了10Gb/s电吸收调制器/分布反馈(DFB)半导体激光器单片集成光发射模块.在器件中引入增益耦合机制以提高单模成品率,并采用感应耦合等离子体干法刻蚀技术以降低调制器电容.集成器件阈值电流为12mA,在-2V偏置时的消光比为15dB,器件的小信号调制带宽超过10GHz.在10Gb/s调制速率下经过35km单模光纤传输后,误码率为10-12时的功率代价小于1dB.     

A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI

We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI.The threshold current is 37mA and the output power at 100mA gain current is 3.5mW.When coupled to a single-mode fiber with a coupling efficiency of 15%,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V.The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.     

基于紫外光刻的双轴张应变Ge/SiGe多量子阱电吸收调制器北大核心CSCD

采用紫外光刻工艺(ultraviolet lithography technique,UVL),在互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)兼容的硅基平台上制作了基于悬空微桥结构在Ge/SiGe多量子阱材料中引入双轴张应变的低偏振相关电吸收调制器。利用拉曼光谱测试了器件引入双轴张应变的大小,并对器件在横电(transverse electric,TE)偏振和横磁(transverse magnetic,TM)偏振下的光电流响应、调制消光比和高频响应等性能进行了测试。器件的低偏振相关消光比在0 V/4 V工作电压下可达5.8 dB,3 dB调制带宽在4 V反向偏置电压时为8.3 GHz。与电子束光刻工艺(electron beam lithography technique,EBL)相比,采用UVL制作的器件在调制消光比、高频响应带宽等性能上略差一点,但具有曝光时间短、成本低和可大批量生产等优势,应用前景广阔。     

Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

The fabrication of the first 1.55-/spl mu/m wavelength tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser is reported. A low-threshold and stable single-mode operation is obtained when the devices were uniformly pumped. A single-mode output power close to 10 mW from a single-mode fiber (40 mW in free space) is obtained with a 0 V bias to the modulator and an extinction ratio of up to 15 dB at 2.5 V. This single mode stability is due to the continuously distributed phase shift implemented in the structure. With a nonuniform injection, it was possible to select one particular mode out of the three neighboring modes inside the broad-reflection band of the reflector. A tuning range of 3.5 mm was obtained while maintaining an output power of more than 2 dBm from each mode.     

基于SAG和QWI结合技术的电吸收调制器与可调谐DBR激光器的单片集成

报道了基于选择区域生长和量子阱混杂结合技术的电吸收调制器与可调谐DBR激光器的单片集成.集成器件显示出了良好的静态特性:阈值电流为37mA;100mA激光器增益区偏置电流下,直流输出功率为3.5mW;当使用单模光纤耦合(耦合效率15%),调制器偏压在0～-2V之间时,静态消光比大于20dB;波长调谐范围为4.4nm,覆盖了6个100GHz间隔的WDM信道.     

Polymeric digital optical modulator based on asymmetric branch

A digital optical modulator based on an asymmetric Y-branch waveguide is proposed and fabricated by using an electro-optic polymer. The operating point is initially shifted to the off-state utilising the asymmetry in the branch to provide an initial zero-state with no electrical bias. It has been confirmed that the high extinction ratio can be obtained with a low drive voltage. An extinction ratio of 25 dB is demonstrated for a drive voltage of 20V using a polymer PMMA-DR1 with r_ss of 5 pm/V at 1.3 μm     

Small-chirp 40-Gbps electroabsorption modulator with novel tensile-strained asymmetric quantum-well absorption layer

A small-chirp 40-Gbps electroabsorption modulator (EAM) with a novel tensile-strained asymmetric quantum-well (QW) absorption layer has been demonstrated for the first time. The strain and the band line-up of the asymmetric QW structure were designed in order to obtain a small-chirp operation, a clear eye opening, and a high extinction ratio simultaneously. The chirp measured as /spl alpha/-parameter was reduced without any penalty of extinction ratio and eye opening. The measured /spl alpha/-parameter was smaller than 1.5 at any bias voltage from 0 to -2 V. The measured 3-dB bandwidth of a 75-/spl mu/m-long EAM exceeded 50 GHz at -1 V bias voltage. Under a 40-Gbps modulation, a clear eye opening was obtained, and the eye diagram showed no violation of the standard STM256/OC768 mask. The measured dynamic extinction ratio was over 11 dB.     

16-arrayed electrooptic polymer modulator

A 16-arrayed polymeric optical modulator is fabricated using an electrooptic (EO) polymer with a large EO coefficient and good thermal stability. The 16-arrayed modulator has lumped-type electrodes with a response time of less than 1 ns. The 16-arrayed modulator has good uniform modulation characteristics between the individual modulators. The deviation of half-wave voltages is 0.2 V and that of insertion losses about 1 dB. Crosstalks range from -28 to -36 dB and extinction ratios are more than 21 dB.     

20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQWelectroabsorption modulator with 1.2-V drive voltage

The authors have fabricated a ridge waveguide electroabsorption modulator based on the quantum-confined Stark effect in InGaAsP/InGaAsP multiple quantum wells. The drive voltage for 12-dB extinction ratio is 1.2 V, and the frequency response is flat within 2 dB from DC to 20 GHz. Operation at 20 Gb/s is reported. Extensive data concerning the parasitic phase modulation (chirping) are obtained as a function of applied bias acid operating wavelength     

Ultra-low Vpp and high-modulation-depth InP-based electro-optic microring modulator

A modulator is an essential building block in the integrated photonics,connecting the electrical with optical signals.The microring modulator gains much attention because of the small footprint,low drive voltage and high extinction ratio.An ultra-low Vpp and high-modulation-depth indium phosphide-based racetrack microring modulator is demonstrated in this pa-per.The proposed device mainly comprises one racetrack microring,incorporating a semiconductor amplifier,and coupling with a bus waveguide through a multimode interference coupler.Traveling wave electrodes are employed to supply bidirection-al bias ports,terminating with a 50-Ω impedance.The on/off extinction ratio of the microring reaches 43.3 dB due to the delic-ately tuning of the gain.An 11 mV Vpp,a maximum 42.5 dB modulation depth and a 6.6 GHz bandwidth are realized,respect-ively.This proposed microring modulator could enrich the functionalities and designability of the fundamental integrated devices.     

40 Gbit/s electroabsorption modulated distributed feedback laser

A 40 Gbit/s multi-quantum well (MQW) electroabsorption modulator (EAM) with a lumped electrode monolithically integrated with a distributed feedback (DFB) laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 18 mA, over 40 dB side-mode suppression ratio at 1 550 nm and more than 30 dB extinction ratio when coupled into a single-mode fiber. By adopting deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene (BCB), the capacitance of the EAM is reduced down to 0.18 pF and over 33 GHz modulation bandwidth at a small signal has been demonstrated. Negative chirp operation is realized when the bias voltage is beyond 1.6 V.     

Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers

Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20/spl deg/C and 70/spl deg/C for InGaAlAs-InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.     

Strained-layer multiple-quantum-well InGaAs/GaAs waveguidemodulators operating around 1 μm

Detailed experimental results on the properties of multiple-quantum-well waveguide modulators on strained InGaAs/GaAs layers are presented. Transmission and photocurrent measurements are performed using a tunable Ti-sapphire-laser. The spectra reveal an absorption edge shift as large as 60 nm at 5 V reverse bias. Optimum performance is achieved around a wavelength of 1 μm, where an extinction ratio of up to 20 dB is obtained with an absorption loss of less than 2 dB/cm. The overall insertion loss of the modulator approaches a constant value of 6.5 dB at higher wavelengths (λ⩾980 nm) which is shown to be mainly affected by coupling losses     

A unidirectional output optical frequency conversion device with anasymmetric-κ DBR structure

A novel optical frequency conversion device that successfully demonstrates optical frequency conversion and unidirectional transmission of optical signals has been designed and fabricated. The device is composed of a gain region and saturable absorber region with monolithically integrated distributed Bragg reflector (DBR) mirrors with different coupling coefficients. The device structure is optimized to achieve three functions: 1) unidirectional light output, 2) converted-light wavelength tuning, and 3) optically triggered optical frequency conversion. The output power of converted light from the light input-end facet of the device is 30 dB smaller than that from the output-end facet, and the converted light wavelength can be scanned over 4 nm without a bias current to the input-end DBR region, and it is widened to 7.8 nm by injecting current to that region. The device emits converted light only when light input is injected and optical signals are unidirectionally transmitted, and its response frequency is estimated to be 0.8 GHz     

Ultrahigh-speed driverless MQW intensity modulator, and 20 Gbit/s, 100 km transmission experiments

An InGaArInAlAs MQW modulator with the low voltage of 1.5 V for 10 dB extinction ratio and 16 GHz bandwidth has been developed. This ultrahigh-speed modulator enables the modulator driver to be eliminated from the transmitter. 100 km transmission experiments have been carried out using either a 1 V peak to peak output monolithic-IC-driven modulator at 15 Gbit/s or a 2 V peak to peak output multiplexer-driven modulator at 20 Gbit/s. This is the first report on multigigabit operation of MQW modulators to the authors' knowledge.<>