认知无线电中基于小波变换和干扰温度估计的频谱感知

干扰温度是认知无线电领域中引入的一种衡量频段上干扰强度的量.本文提出了基于小波变换和干扰温度估计的频谱感知策略.该思想首先利用小波变换分析无线宽带系统中信号功率谱密度变化的奇异点,将整个宽带频谱分为几个子区域,实现对无线传播环境的"粗感知";再运用多窗谱估计与奇异值分解(MTM-SVD)算法进行处理,获得每个子区域的干扰温度值;最后与干扰温度门限比较判决,从而得到适合认知无线电系统应用的频谱空洞,完成对无线传播环境的"细感知".     

基于无线电监测技术的认知无线电频谱检测研究

认知无线电频谱检测通常将干扰温度作为探测目标,通过估计空间内任意一点的干扰温度并与设定的干扰温度限值比较找出可用频谱.根据干扰温度估计理论算法,结合现代无线电监测技术,可以将无线电监测站的监测、测向系统作为分布传感器直接测定干扰温度估计算法中几个重要的中间未知参数,继而得到考察空间区域内任意一点的干扰温度值.该方法对理论算法进行了实践验证,可以对算法未来的修正、完善提供实践依据,并且对发展无线电监测技术以便为无线电频率资源管理部门制定相应的决策提供技术依据具有重要意义.     

认知无线电中基于干扰温度的频谱探测技术

认知无线电的提出,能够在一定程度上提高频谱利用率,解决目前通信频谱资源紧缺的问题.频谱探测是认知无线电中的关键技术之一,通过频谱探测技术来检测授权用户的频谱空洞,以使得非授权用户能够有效利用.文章介绍了常用的基于干扰温度的探测模型以及频谱估计算法,进行了分析与总结,并且提出了目前频谱探测技术的不足之处.     

基于最大熵谱估计的频谱感知方法的研究

频谱感知是认知无线电系统的关键技术环节,为了减少系统间的相互干扰,要求频谱感知具有短时性、分辨率高等特点.为此,提出了基于最大熵谱估计的频谱感知方法,理论分析与仿真结果表明,基于最大熵谱估计的频谱感知方法具有感知时间短、频谱分辨率高、系统复杂度低等突出优势,可以作为认知无线通信系统设计的选择方案.     

感知无线电中的频谱检测技术

感知无线电可以自动感知外界的无线环境并能调整系统参数以适应环境的变化。频谱检测是感知无线电的关键技术之一，要求感知用户可靠、快速地检测频谱空洞。文中按照主用户发射端检测和主用户接收端检测，对当前的主要频谱检测算法进行了分类，并对频谱检测算法进行了讨论和对比研究，给出了在IEEE802．22和频谱池结构中的频谱检测的具体应用。     

基于神经网络的多窗口频谱估计方法研究

干扰温度估计是认知无线电技术中的关键问题之一.多窗口频谱估计结合奇异值分解技术提供了一种估算射频环境中干扰温度功率谱的有效途径.提出基于神经网络的多窗口频谱估计结合奇异值分解的算法,与传统算法相比,该算法提高了干扰温度估计值的可靠性和准确度,降低了计算复杂度,同时能够适应复杂电磁环境下对干扰温度的实时性估值的要求.     

认知引擎中决策方法的研究

认知无线电(Cognitive Radio,CR)技术通过智能的频谱管理来解决频谱资源"短缺"问题,它能够感知到授权用户的空闲频谱,并有效地加以利用,从而减少与授权用户的冲突。现有无线电参数调整策略无法根据环境变化和用户需求进行智能调整,认知引擎中的决策方法能够解决该问题。遗传算法(Genetic Algorithm,GA)和二进制粒子群算法是实现认知引擎决策的典型算法,在对2种算法进行了介绍之后,仿真比较了2种算法在性能方面的差异。     

认知无线电中的频谱接入技术

认知无线电是一种基于软件无线电的智能通信系统,它能够认知周围环境,并能通过一定的方法相应地改变某些工作参数来实时地适应环境,从而达到提高频谱利用率、缓解频谱资源紧张的目的.授权频段的频谱利用问题是认知无线电实现的关键技术之一.研究了授权频段的两种频谱利用方法:动态频谱接入和基于动态频谱接入模型之一的机会频谱接入.     

认知无线网络中基于用户需求和频谱聚合的动态频谱分配

认知无线电技术可以感知周围无线环境择机利用频谱空洞,从而达到提高频谱效率的目的.在认知无线电网络中,现有的频谱分配算法大部分是基于连续频谱分配并且没有考虑用户的需求.但是连续频谱分配会生成许多小于用户需求的频谱片段,这些频谱片段不能被充分利用,从而造成频谱浪费.本文基于图论提出了一种联合考虑用户需求和非连续频谱聚合的频谱分配算法.在该算法中,非连续的频谱片段被聚合以尽可能多地满足用户总需求,充分利用了小的频谱片段,避免了频谱浪费,从而提高频谱效率.     

协作频谱感知在认知网络中的应用

认知无线电能够灵敏感知周围环境的变化,通过频谱感知功能发现频谱空洞,使得认知无线电能够与周围通信环境相适应。在认知无线电网络中,认知用户（次用户）必须连续地监控频谱,检测主用户是否存在。如果主用户存在,次用户必须尽快地退出该频段,从而不影响主用户。在文中采用一种协作机制,即两用户进行协作频谱感知,从而提高主用户的检测率,减少了检测时间,并且得到捷变增益。我们用Matlab给出仿真结果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.