一种基于开路短截线相位补偿的模拟预失真电路

传统的单路并联式模拟预失真电路,其可调性不高,对功率放大器的三阶交调改善量也非常有限。为了解决上述问题,提出了一种能用开路短截线进行适当相位补偿的S 波段模拟预失真电路。该模拟预失真电路使用肖特基二极管产生三阶交调信号,通过改变开路短截线的长度,来调整基波信号与三阶交调信号的相位差,使它的特性跟功率放大器的特性相反,从而抵消功放的三阶交调信号。实验结果表明,在3.5 GHz 的AB 类功放的1 dB压缩点处,加模拟预失真电路后,三阶交调量改善了约34 dB。     

A Simple, Linearized, Phase-Modulated Analog Optical Transmission System

We describe and experimentally demonstrate a new technique to suppress third-order intermodulation distortion (IMD) in a coherent phase-modulated RF optical link. The anisotropic electrooptic coefficient of lithium niobate is exploited to simultaneously modulate orthogonally polarized fields. These fields are then combined to eliminate the third-order distortion. This technique uses a single phase modulator, requiring no external bias or control, for a highly linear photonic microwave relay. The resulting suboctave dynamic range is limited by fifth-order IMD instead of third-order IMD     

Amplifier linearization using simultaneous harmonic and basebandinjection

A novel linearization scheme utilizing injection of distortion signal at the input of amplifier is described. Harmonic and baseband signal generated by predistortion circuits is fed to the input of the main amplifier and by controlling the power level of the harmonic and baseband signal properly, mixing products can be made to cancel out with the FET inherent distortion signals. Unlike many other techniques, no precise phase adjustment is required for the RF signal path. For verification, the two-tone performance of a constructed linearized amplifier is measured and a reduction of the third-order IMD power level of about 27 dB is observed     

Distortion compensation characteristics of pre-distortion circuitfor private mobile radio

The authors describe the distortion compensation characteristics of a transistor-type pre-distortion circuit for private mobile radio, and how third-order intermodulation distortion (IMD3) near the saturation point (38.3 dBm of output power) could be improved by 12.2 dB by employing a phase inverter with passive elements     

采用90°分支电桥的C波段预失真线性化器

为了改善功率放大器的三阶交调失真,提出了一种基于90°分支线电桥的C波段预失真线性化器,使用肖特基二极管产生非线性信号。通过改变线性化器的偏置电压及电容,可调整线性化器的增益扩张和相位延迟特性,与功放级联后对功放的三阶交调失真有改善作用。将该线性化器应用到工作频率为7 GHz,饱和功率为20 dBm的放大器上,在输出功率回退5 dBm处对放大器的三阶交调有10 dBc的改善。     

Study of intermodulation in RF MEMS variable capacitors

This paper provides a rigorous study of the causes and physical origins of intermodulation distortion (IMD) in RF microelectromechanical systems (MEMS) capacitors, its analytical dependence on the MEMS device design parameters, and its effects in RF systems. It is shown that not only third-order products exist, but also fifth order and higher. The high-order terms are mainly originated by the nonlinear membrane displacement versus applied voltage and, in the case considered in this study, with an additional contribution from the nonlinear dependence of the reflection coefficient phase on the displacement. It is also shown that the displacement nonlinear behavior also contributes to the total mean position of the membrane. In order to study these effects in depth, an analytical frequency-dependent IMD model for RF MEMS based on a mobile membrane is proposed and particularized to the case of a MEMS varactor-a device for which IMD can be significant. The model is validated, up to the fifth order, theoretically (using harmonic balance) and empirically (the IMD of a MEMS varactor is measured). To this end, a two-tone IMD reflection measurement system for MEMS is proposed.     

Analysis to two-tone, third-order distortion in cascaded two-ports

The third-order intermodulation distortion (IMD) of a system composed of a number of cascaded two-port networks is considered. The two-tone, third-order intercept point (IP) is highly dependent on the phase angles of the IMD signals, which are usually unknown to the system designer. Consequently, worst-case design strategies are normally used in these situations. General bound formulas are developed for the IP that include the effects of mismatches between component networks. Expressions for the expected value and variance of the IP of two cascaded two-port networks are also obtained. A comparison of these results with measurements indicates that worst-case design strategies are overly conservative in many situations     

A Distortion Shaping Technique to Equalize Intermodulation Distortion Performance of Interpolating Arbitrary Waveform Generators in Automated Test Equipment

This paper demonstrates a phase switching algorithm for Interpolating Digital-to-Analog Converter (DAC) based Arbitrary Waveform Generator (AWG) that resides in Automated Test Equipment (ATE) to test semiconductor devices. This confirms a previous exercise that was made by experiment with different Intermodulation Distortion (IMD) suppression techniques and starting phase shifts to suppress IMD tones of the AWG with the interpolating DAC. We show that the poor performance of the AWG can be improved by using the phase switching algorithm over the installed base of a company’s tester platform. It is also shown that the IMD performance of AWGs across a company’s tester installed base can be equalized, and how it can be achieved using the phase switching technique. We describe how the IMD specifications of the instrument are much worse than those actually measured, and by using phase switching, better performance can be achieved than what would be possible under normal conditions. We present how this technique allows the use of a low-cost tester resource to test IMD products of such as communication application ADCs with a higher dynamic range than what was previously possible.     

一种新型线性化器的研究

介绍了固态功率放大器的线性化技术,并提出了一种新型反向并联肖特基二极管预失真器结构。对预失真器原理与基本结构进行了分析,通过改变预失真器中二极管的外加偏置电压和电阻值来调节失真信号的幅度和相位,达到线性化的目的。同时,利用ADS软件对加预失真器的固态功率放大器进行电路优化仿真,根据电路优化参数,对线性化固态功率放大器进行研制。测试结果表明,固态功率放大器三阶交调改善了15.8 dB,五阶交调也改善了10 dB,线性化改善效果明显,突破了工程化应用的技术瓶颈。     

Analysis and Design of a Dynamic Predistorter for WCDMA Handset Power Amplifiers

This paper presents a dynamic predistorter (PD), which linearizes the dynamic AM-AM and AM-PM of a wideband code division multiple access handset power amplifier (PA). The dynamic PD allows an adjacent channel leakage power ratio (ACPR) improvement of 15.7 dB, which is superior to conventional PDs that linearize static AM-AM and AM-PM. The dynamic PD was designed using an HBT generating nonlinearity, a short circuit at the baseband (les4 MHz), and a load circuit for the HBT at the RF fundamental band (ap1.95 GHz). Volterra-series analysis was performed to understand the mechanism of the dynamic PD. The analysis revealed that the short circuit at the baseband enabled the dynamic PD generating third-order intermodulation distortion (IMD3) with opposite phase to the fundamental tone (i.e., antiphase IMD3). The antiphase IMD3 allows dynamic gain compression, which linearizes the dynamic gain expansion of a PA with low quiescent current. The analysis also revealed that the IMD3 amplitude of the dynamic PD can be adjusted by load impedance at the RF fundamental band, which enables the gradient of dynamic AM-AM and AM-PM to be optimized to linearize the PA. The fabricated two-stage InGaP/GaAs HBT PA module with the dynamic PD exhibited an ACPR of -40 dBc and a power-added efficiency of 50% at an average output power of 26.8 dBm with a quiescent current of 20 mA     

A Nevv Method of Third-Order Intermodulation Reduction in Nonlinear Microwave Systems

Third-order intermodulation distortion (IMD (3)) of some microwave systems has been analyzed using Vollterra series. In this paper, theoretical results which have been calculated with a nonlinear FET model show that third-order intermodulation prodgcts of two input signals at f/sub 1/ and f/sub 2/ can be reduced by several orders of magnitude (in fact, theoretically, IMD (3) should be reduced to zero), with a low-frequency feedback at f/sub 1/- f/sub 2/, when the amplitude and the phase of this feedback are correctly chosen. To verify this prediction, a circuit has been realized and measurements have been made on a one-stage FET amplifier. First results confirm our analysis. Experimental measurements show a 12-dB decrease of intermodulation products with our method.     

Two-Tone and Nine-Tone Excitations in Future Adaptive Predistorted Linearised Basestation Amplifiers of Cellular Radio

Linearisation of a radio basestation amplifier using a third order, a fifth order and a seventh order predistortion scheme is studied. Adaptive predistortion using a third order predistorter improved the amplifier intermodulation distortion (IMD) by between 6.4 dB and 33 dB from the third IMD power level (i.e., maximum power amplitude variation of the IMD), provided by the raw amplifier, as measured by a two tone test. The variation in improvement is due to changes in the input power level. Improvement increases as the input power is backed off from the 1 dB compression point. A fifth order predistorter will give an IMD improvement of 8.7 dB and 48.4 dB if properly adjusted. A seventh order predistorter (with the fifth complex coefficient fixed to zero) will show the best performance, particularly throughout a window (approximately from 1.5 dB to 3 dB away from the 1 dB compression point). The IMD improvement throughout this window within the high input range measures between 9.1 dB to 21.7 dB over that achieved with a fifth order predistorter. For a nine-tone test (with uniformly distributed random phase), a third order predistorter will hardly improve the worst IMD power level, provided by the raw amplifier. A fifth order predistorter, if properly adapted will give an IMD improvement of between 8.8 dB and 41.5 dB from the worst IMD level while a seventh order predistorter will give a close performance to that of a fifth order one. Fixing the predistorter coefficients enables a comparative study of the IMD power level improvement between 5th order fixed and adaptive predistorters, for a nine-tone excitation. A 5th order predistorter with its coefficients fixed to those values obtained for optimum IMD level at a backed-off power input value of 8.5 dB from the 1 dB compression point is found to maintain an IMD power variation better than 55 dB from fundamental power level, throughout the input range, up to the backed-off value.     

Characterization of a low-noise linearized microwave power amplifier module

An X-band, low-noise, linearized microwave power amplifier module consisting of a low-noise solid-state amplifier (SSA), predistortion linearizing circuit, and low-gain helix traveling wave tube (TWT) is designed and tested in order to demonstrate both reduced noise figure and suppressed intermodulation distortion ratio. Two-tone intermodulation distortion (IMD) ratios are predicted from simulations obtained from modeling of the TWT, linearizing circuit, and SSA by the use of Agilent's Advanced Design System simulation code. Simulated IMD ratios are in good agreement with measured results. Measurements show a noise figure of 2.2 dB at 9.5 GHz and the third-order IMD ratio of -53 dBc at 10 dB input back off from the input P1dB point. It is found that both noise figure and IMD ratio are significantly improved compared with conventional helix-TWTs and microwave power modules.     

一种新的用于射频功率放大器的预失真法

改善射频功率放大器非线性的方法通常有功率回退法、负反馈法、前馈法和预失真法。预失真技术与其他线性化技术相比具有电路结构简单、性能优良、成本低等优点,因而受到设计者的青睐。设计了一种利用混频器和滤波器分别产生三阶和五阶交调分量的预失真器,采用复增益调节器控制预失真器产生的IMD3,IMD5幅度和相位。并从理论上对其特性进行了分析,利用专用的微波电路仿真工具进行仿真验证,仿真结果表明双音测试在2 GHz频段,IMD3和IMD5分别改善了17 dBc和12 dBc。     

Analysis of envelope signal injection for improvement of RF amplifier intermodulation distortion

Adaptive bias techniques based on envelope signal power detection have been proposed for linearity enhancement and dc current reduction in RF amplifiers. Experimental results show an improvement in amplifier linearity, although asymmetric intermodulation distortion (IMD) was observed. This work rigorously studies the effects of the envelope signal injection on amplifier distortion using the Volterra series formulations. The results intuitively explain the spectral regrowth asymmetry, and point to a design technique in which third-order IMD can be optimally cancelled. The theory was verified through comparison to measurement and simulation results.     

A novel optical modulator system with enhanced linearizationproperties

The authors propose a novel optical modulator system that has the properties of having a null third-order intermodulation distortion (IMD); a spurious signal free dynamic range in excess of 100 dB as determined by the second-, fourth-, and fifth-order IMD; and a linear dynamic range of 2.46 radians. It is shown that a combination of a tandem of two directional couplers has the property of eliminating completely third-order IMD term, gives a large spurious signal free dynamic range, and provides a simple and practical solution to the problem of linearization of optical modulators     

Amplifier linearization using compact microstrip resonant cell-theory and experiment

This paper presents a novel technique for reducing the intermodulation distortions (IMDs) in power amplifiers. In this method, both second- and third-harmonic components generated by the transistor are reflected back simultaneously by the compact microstrip resonant cell (CMRC) at the input port with proper phases to mix with the fundamental signal for the reduction of IMDs. A rigorous mathematical analysis on the effectiveness of multiharmonic reflections has been formulated and derived using the Volterra series. Moreover, the delay mismatch factor of the proposed method is analytically studied and the result shows that a better tolerance to the delay error can be achieved by using CMRC circuitry. Standard two-tone test measurements reveal 32- and 22-dB reductions for the third-order IMD and fifth-order IMD, respectively, without affecting the fundamental signal at 2.45 GHz. Meanwhile, the proposed approach gives a peak power added efficiency of 53% with 11.5 dB transducer gain and 15 dBm output power for a single-stage SiGe bipolar junction transistor. The adjacent channel power ratio (ACPR) is -55dBc for a data rate of 384-kb/s quadrature phase shift keyed modulated signal with 2-MHz spanning bandwidth, and this ACPR is maintained for a broad range of output power level.     

前馈技术在改善功率放大器线性中的应用

推导并分析了存在增益和相位跟踪等误差情况下,功率放大器前馈技术对三阶线性失真的改善情况,并从原理上论述了前馈技术的工作原理.前馈技术一般可将三阶互调降低10～30 dB,在新一代的抗干扰跳/扩频电台中有广泛应用.     

Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers

This paper presents the improvement techniques of intermodulation-distortion asymmetries with wide carrier-spacing signals in L/S-band high power amplifiers. We proposed a novel circuit technique to directly connect LC series resonant circuits to the gate and drain electrodes of the transistor die in a package for baseband terminations with a wide frequency range. By applying this circuit technique to a 28-V operation 200-W GaAs heterojunction field-effect transistor (HJFET) amplifier, the third-order intermodulation distortion (IMD3) asymmetries were improved even if the two-tone carrier spacing (Deltaf) exceeds 100 MHz. In addition, we analyzed the IMD3 asymmetries of a Doherty amplifier through the IMD3 vector combination of the main and peak amplifiers. A newly developed 28-V operation 200-W GaAs HJFET Doherty amplifier with source and load baseband terminations also delivered flat IMD3 characteristics against the Deltaf over 50 MHz.     

基于GaN HEMT的高线性星载Doherty功率放大器设计北大核心CSCD

在射频通信链路中,功率放大器决定了发射通道的线性、效率等关键指标。卫星通信由于是电池供电,对功率放大器的工作效率要求比较高。文章基于GaN HEMT晶体管采用对称设计完成了一款高效率的Doherty功率放大器。测试结果表明:该Doherty功放的功率增益大于29 dB;1 dB压缩点功率(P_(1 dB))大于35 dBm;在35 dBm输出时,其功率附加效率(PAE)大于47.5%,三阶交调失真(IMD3)大于35 dBc;在功率回退3 dB时,其PAE大于37%,IMD3大于32 dBc。