Ge_xSi_(1-x)/Si脊形光波导的最佳结构

根据光集成技术对脊形光波导的要求 ,通过系统的分析和优化设计得出了GexSi1 -x/Si脊形光波导的最佳结构参数。对波长为 1 .3μm的光波 ,其数值孔径在光波导的输入、输出端均和单模光纤的相匹配 ,其最佳Ge组分为 0 .0 3和 0 .0 4。符合大截面且和单模光纤芯径相当的脊高分别为 4～ 1 0 μm和 4.0～ 5 .9μm ,脊宽分别为 8.8～ 1 0 .0 μm和 5 .9～ 1 0 .0 μm。     

Si_(1-X)Ge_X/Si红外光电探测器

本文报导了用两种缓冲层生长技术研制的 Si1- XGe X/ Si异质结 pin型红外探测器。其波长范围为0 .70～ 1.5 5 μm,峰值波长为 0 .96～ 1.0 6 μm,暗电流密度低达 0 .0 3μA/ mm2 ( - 2 V) ,在 1.30 μm处的响应度高达 0 .15 A/ W( - 5 V) ;讨论了 Ge组分、外延层厚度、偏置电压等对探测器参数的影响     

GaAs微条粒子探测器的设计

介绍了最新研制成功的 Ga As微条粒子探测器的芯片设计和工艺设计。每一微条长度均为 1 70 0 0μm,宽度分别为 2 0、5 0、1 0 0、2 0 0和 3 0 0 μm。微条间距有 5 0、1 0 0、2 0 0和 3 0 0 μm四种 ,芯片面积为 5 .95 mm×1 7.0 0 mm。微条粒子探测器的反向击穿电压最高达 2 40 V,反向漏电流密度最低为 0 .0 2 5 μA/mm2。它对光照有强烈的敏感性。微条粒子探测器的辐照特性见其它论文报道     

基于InP/空气隙布拉格反射镜的长波长谐振腔光电探测器

报道了一种长波长的In P基谐振腔(RCE)光电探测器.采用选择性湿法刻蚀,制备出基于In P/空气隙的分布布拉格反射镜,并将该结构的反射镜引入RCE光电探测器.制备的器件在波长1.5 10 μm处获得了约5 9%的峰值量子效率,以及8GHz的3d B响应带宽,其中器件的台面面积为5 0 μm×5 0 μm.     

365～193nm曝光的亚半微米多晶硅栅控制

综述了测量越过典型有源区形貌的多晶硅栅线宽偏差 ,采用光刻模拟程序计算。采用顶层和底层抗反射涂层与否 ,对从 36 5nm曝光的 0 .40 μm到 193nm曝光的 0 .2 2 5 μm范围抗蚀剂成像中所有线宽进行了计算。     

Description of the Mueller Matrix for Multiple Scattering at 90°

Mueller matrix elements are presented representing scatter to 90° from an incident polarized laser beam. The cases considered include five particle sizes (such as l.24 μm, 0.494 μm, 0.36 μm, 0.123 μm, and 0.065 μm), two concentrations (such as 0.002 5% and 0.005% by volume), and three detector depths (such as 0, l.5 cm, and 3 cm into the scattering volume). If the magnitudes of the elements can be rounded off to the nearest 0.01, a particle size dependence is described by the resulting average matrices, which is only two matrices for d＞0.22 μm and d＜0.22 μm which are nonsingular and asymmetric, respectively.     

一种高性能CMOS带隙电压基准源设计

采用一级温度补偿和电阻二次分压技术设计了一种高性能 CMOS带隙电压基准源电路 ,其输出电压为 0 .2 0～ 1.2 5 V,温度系数为 2 .5× 10 - 5/ K.该带隙电压基准源电路中的深度负反馈运算放大器为低失调、高增益的折叠型共源共栅运算放大器 .采用 Hspice进行了运算放大器和带隙电压基准源的电路仿真 ,用 TSMC0 .35 μm CMOS工艺实现的带隙基准源的版图面积为 6 4 5 μm× 196 μm.     

Description of the Mueller Matrix for Multiple Scatteringat 90°

Mueller matrix elements are presented represen ting scatter to 90° from an incident polarized laser beam. The cases considered include five particle sizes (such as l.24 μm, 0.494 μm, 0.36 μm, 0.123 μm, and 0.065 μm), two concentr ations (such as 0.002 5% and 0.005% by volume), and three detector depths (such as 0, l.5 cm, and 3 cm into the scat tering volume). If the magnitudes of the elements can be rounded off to the near est 0.01, a particle size dependence is described by the resulting average mat rices, which is only two matrices for d >0.22 μm and d <0.22 μm which are nonsingular and asymmetric, respectively.     

离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器

用纯Ar离子束刻蚀方法制备出大功率高效率6 5 0 nm实折射率Al Ga In P压应变量子阱激光器.对偏角衬底,干法刻蚀可得到湿法腐蚀不能得到的高垂直度和对称台面.制备的激光器条宽腔长分别为4 μm和6 0 0 μm,前后端面镀膜条件为10 % / 90 % .室温下阈值电流的典型值为4 6 m A,输出功率为4 0 m W时仍可保持基横模.10 m W,4 0 m W时的斜率效率分别为1.4 W/ A和1.1W/ A.     

高效率掺Yb双包层光纤激光器

实验所用增益光纤为信息产业部电子第 46所 天津 与南开大学联合研制的掺 Yb双包层光纤 .芯径直径 5 .5 μm,数值孔径 NA～ 0 .1 1 ;圆形内包层直径为 1 2 5 μm,NA～ 0 .38;掺杂浓度以吸收系数表示 ,在 976 nm波长处吸收为 6 .4d B/ m,光纤长度取 2 0 m.采用 LD端面抽运方式 ,抽运源为北京半导体研究所生产的单管多模 LD,尾纤芯径 1 0 0μm,NA～ 0 .2 1 ;输出最大功率为 872 m W,中心波长 976 nm,带宽 6 nm.F- P腔结构 ,抽运端腔镜选用西南物理研究所 成都 研制的二色镜 ,对抽运光 976 nm透过率为 85 % ,对激光 1 0 6 0 nm波段的…     

纳米级集成电路与超纯水

阐述美国《国家半导体技术发展路线》中存储器的发展目标对其关键材料超纯水在水质和耗量降低上的要求,以我国8英寸/0.18μm和12英寸生产线的相关数据与其对照,表明在总有机碳、溶解氧等项水质参数已可满足该发展要求,而在SiO2、微粒限定、检测技术以及超纯水耗量降低等方面尚有差距和问题,并提出相应的解决方案,讨论了降低超纯水等项水资源消耗的途径。重申了水回收的意义,关注“功能水”和高效、省能的GDI(聚合型电去离子)装置将是有益的。     

集成电路与超纯水

本文以16M位、64M位集成电路工厂纯水为实例，介绍了两套超纯水装置的处理流程与制水特点，它们均已通过一年多运转的考验，处理效果稳定，水质指标分别达到了设计水质要求。     

8英寸线超纯水技术的若干特点

应小于等于0．25μm8英寸fab之需，介绍了实际工程的各项优越水质参数和高可靠、易运作等特点。讨论了水的回收技术、总有机碳（TOC）减低技术和安装，配管中的零污染的可能性。     

IC工艺用超纯水系统的TOC实验研究

从运行管理角度,以实验方法考察了IC工艺用超纯水制造过程中TOC(总有机碳)的若干问题。通过在线测量一次纯水、二次纯水的TOC含量和相应的数据统计,评估了水平各异的两套超纯水制造系统中各主要装置对TOC的除去效率及其对TOC的影响。     

Advanced ultrapure water systems with low dissolved oxygen fornative oxide free wafer processing

In the manufacture of submicron or deep submicron ULSIs, it is important to completely suppress native oxide growth on the silicon wafer surfaces. In a wet process, dissolved oxygen must be removed from the ultrapure water used for the final rinsing of the wafer. Two independent systems for the supply of ultrapure water, augmented with new techniques to remove dissolved oxygen, have been installed in the mini-super-clean room at Tohoku University. Both systems use two-stage dissolved oxygen removing methods. System one uses vacuum degassing through membrane and catalytic resin-based reduction, while system two uses vacuum degassing through membrane and nitrogen gas bubbling. Both systems can supply ultrapure water of 10 ppb or less in dissolved oxygen concentration. The concentrations of other impurities such as TOC, silica and total residue are also 1 ppb or less     

Effect of component interactions on the removal of organicimpurities in ultrapure water systems

The interaction among the components of the ultrapure water systems in semiconductor plants is explored. Two important examples of these interactions are investigated: interactions of ultraviolet (UV) radiation units with membrane filters and interactions of UV with ion-exchange units. Both experimental and theoretical techniques are developed to study these interactions. The results indicate that the sequencing of UV and filter units affect the efficiency of total oxidizable carbon (TOC) removal. In particular, the efficiency is higher when the filter is before UV. Interaction between UV and ion exchange is desirable for the removal of recalcitrant, low-molecular-weight organic compounds such as ethanol, but undesirable for the removal of high-molecular-weight charged compounds such as bacterial lipopolysaccharides, alginic acids, humic acids, methionine, and glycine     

ELGA全自动超纯水处理系统的工艺和设备特点

在集成电路工业已经进入超大规模集成电路时代的今天,如何使超纯水这一重要基础材料的纯度达到电子级Ⅰ级水准,已成为我国净化技术中超纯水处理领域一个急待解决的技术问题。本文专题介绍英国ELGA公司全自动超纯水处理系统工艺流程和设备的特点,最后介绍了该系统生产的超纯水所达到的质量指标。     

水浴条件下YAG倍频激光切割Si片的实验研究

用Nd:YAG固体倍频激光器在水中对Si片进行微刻蚀比在空气中产生的飞溅物少。对两种条件下的刻蚀速率、刻槽表面形貌进行了比较。实验结果得到最窄的刻缝宽度小于50μm,表面不平整度小于5μm,为工业用激光切割Si片提供了更好的工艺。     

Mechanisms for synergistic oxidation of organics in ultrapure watersystems

A mechanistic model is developed for the distribution, oxidation, and removal of organic impurities in typical polishing loops of ultrapure water (UPW) plants. The model is applied to the case of the oxidation of organics by ultraviolet (UV), ozone, and a unique method of adding ozone to the UV unit. The model is validated with direct experimental measurements using various oxidation tests. In particular, the accumulation problem related to the recalcitrant (hard to remove) impurities in the UPW systems with recycle is explained. The model is also used to analyze the dynamic behavior of polishing and reclaim/recycle loops. The results show the potential oscillatory behavior of UPW loops in case of impurity surges. This behavior is important and needs to be prevented to avoid metrology and control problems     

微水导激光切割玻璃的耦合装置设计

为了解决激光切割钢化玻璃过程中由于热应力导致产生裂纹并发生破裂的技术难题，建立了光液耦合模型，采用FLUENT软件进行了耦合腔内多场分析，获得了微水导激光切割钢化玻璃的工艺参量。结果表明，在喷口口径为0.4mm、水束压力为20MPa、激光功率为48W、切割速率为20mm/s的工艺条件下，厚度为0.5mm及1.0mm的玻璃试样的切割表面均比较光滑、基体内无微裂纹存在，切缝宽度约为100μm。该双注水口耦合装置的设计是合理的，能够满足钢化玻璃切割工艺的要求。