Magnetic‐Induced‐Piezopotential Gated MoS2 Field‐Effect Transistor at Room Temperature

Utilizing magnetic field directly modulating/turning the charge carrier transport behavior of field‐effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro–nanoelectronics. Here, a new type of magnetic‐induced‐piezopotential gated field‐effect‐transistor (MIPG‐FET) base on laminate composites is proposed, which consists of Terfenol‐D, a ferroelectric single crystal (PMNPT), and MoS₂ flake. When applying an external magnetic field to the MIPG‐FET, the piezopotential of PMNPT triggered by magnetostriction of the Terfenol‐D can serve as the gate voltage to effectively modulate/control the carrier transport process and the corresponding drain current at room temperature. Considering the two polarization states of PMNPT, the drain current is diminished from 9.56 to 2.9 µA in the P_up state under a magnetic field of 33 mT, and increases from 1.41 to 4.93 µA in the P_down state under a magnetic field of 42 mT and at a drain voltage of 3 V. The current on/off ratios in these states are 330% and 432%, respectively. This work provides a novel noncontact coupling method among magnetism, piezoelectricity, and semiconductor properties, which may have extremely important applications in magnetic sensors, memory and logic devices, micro‐electromechanical systems, and human–machine interfacing.     

Micrometer‐ and Nanometer‐Sized Organic Single‐Crystalline Transistors

The use of micrometer and nanometer‐sized organic single crystals to fabricate devices can retain all the advantages of single crystals, avoid the difficulties of growing large crystals, and provide a way to characterize organic semiconductors more efficiently. Moreover, the effective use of such “small” crystals will be beneficial to nanoelectronics. Here we review the recent progress of organic single‐crystalline transistors based on micro‐/nanometer‐sized structures, namely fabrication methods and related technical issues, device properties, and current challenges.     

High‐Throughput Phase‐Field Design of High‐Energy‐Density Polymer Nanocomposites

Understanding the dielectric breakdown behavior of polymer nanocomposites is crucial to the design of high‐energy‐density dielectric materials with reliable performances. It is however challenging to predict the breakdown behavior due to the complicated factors involved in this highly nonequilibrium process. In this work, a comprehensive phase‐field model is developed to investigate the breakdown behavior of polymer nanocomposites under electrostatic stimuli. It is found that the breakdown strength and path significantly depend on the microstructure of the nanocomposite. The predicted breakdown strengths for polymer nanocomposites with specific microstructures agree with existing experimental measurements. Using this phase‐field model, a high throughput calculation is performed to seek the optimal microstructure. Based on the high‐throughput calculation, a sandwich microstructure for PVDF–BaTiO₃ nanocomposite is designed, where the upper and lower layers are filled with parallel nanosheets and the middle layer is filled with vertical nanofibers. It has an enhanced energy density of 2.44 times that of the pure PVDF polymer. The present work provides a computational approach for understanding the electrostatic breakdown, and it is expected to stimulate future experimental efforts on synthesizing polymer nanocomposites with novel microstructures to achieve high performances.     

Field‐consistent higher‐order free‐interface component mode synthesis

A new free‐interface component mode synthesizing technique based on the notion of higher‐order field consistency is proposed. The present technique employs higher‐order residual attachment modes in addition to kept normal modes while consistency in matching field variables at the substructure interface is maintained. The present field‐consistency approach does not increase the size of the synthesized system even if higher‐order residual attachment modes are included. Higher‐order analyses greatly improves solution accuracy while the final system size always remains the same as the size of the kept normal modes regardless of the order of residual attachment modes. A general procedure of deriving higher‐order residual attachment modes is first described and then a new field‐consistent higher‐order synthesis technique is presented. Copyright © 2001 John Wiley & Sons, Ltd.     

Variational‐based modeling of micro‐electro‐elasticity with electric field‐driven and stress‐driven domain evolutions

Recently, increasing interest in so‐called functional or smart materials with electromechanical coupling has been shown such as ferroelectric piezoceramics. These materials are characterized by microstructural properties, which can be changed by external stress and electric field stimuli, and hence find use as the active components in sensors and actuators. The electromechanical coupling effects result from the existence and rearrangement of microstructural domains with uniformly oriented electric polarization. The understanding and efficient simulation of these highly nonlinear and dissipative mechanisms, which occur on the microscale of ferroelectric piezoceramics, are a key challenge of the current research. This paper does not offer a substantially new physical model of these phenomena but a new mathematical modeling approach based on a rigorous exploitation of rate‐type variational principles. This provides a new insight in the structure of the coupled problem, where the governing field equations appear as the Euler equations of a variational statement. We outline a variational‐based micro‐electro‐elastic model for the microstructural evolution of both electrically and mechanically driven electric domains in ferroelectric ceramics, which also incorporates the surrounding free space. To this end, we extend recently developed multifield incremental variational principles of electromechanics from local to gradient‐extended dissipative response and specialize it by a Ginzburg–Landau‐type phase field model, where the thickness of the domain walls enters the formulation as a length scale. This serves as a natural starting point for a canonical compact, symmetric finite element implementation, considering the mechanical displacement, the microscopic polarization, and the electric potential induced by the polarization as the primary fields. The latter is defined on both the solid domain and a surrounding free space. Numerical simulations treat domain wall motions for electric field‐driven and stress‐driven loading processes, including the expansion of the electric potential into the free space. Copyright © 2012 John Wiley & Sons, Ltd.     

High‐Throughput Near‐Field Optical Nanoprocessing of Solution‐Deposited Nanoparticles

The application of nanoscale electrical and biological devices will benefit from the development of nanomanufacturing technologies that are high‐throughput, low‐cost, and flexible. Utilizing nanomaterials as building blocks and organizing them in a rational way constitutes an attractive approach towards this goal and has been pursued for the past few years. The optical near‐field nanoprocessing of nanoparticles for high‐throughput nanomanufacturing is reported. The method utilizes fluidically assembled microspheres as a near‐field optical confinement structure array for laser‐assisted nanosintering and nanoablation of nanoparticles. By taking advantage of the low processing temperature and reduced thermal diffusion in the nanoparticle film, a minimum feature size down to ≈100 nm is realized. In addition, smaller features (50 nm) are obtained by furnace annealing of laser‐sintered nanodots at 400 °C. The electrical conductivity of sintered nanolines is also studied. Using nanoline electrodes separated by a submicrometer gap, organic field‐effect transistors are subsequently fabricated with oxygen‐stable semiconducting polymer.