Flexible Gallium Nitride for High‐Performance,Strainable Radio‐Frequency Devices

Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio‐frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high‐frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical‐free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state‐of‐the‐art values for electrical performance, with electron mobility exceeding 2000 cm² V^?1 s^?1 and sheet carrier density above 1.07 × 10¹³ cm^?2. The influence of strain on the RF performance of flexible GaN high‐electron‐mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.     

Carbon‐Nanomaterial‐Based Flexible Batteries for Wearable Electronics

Wearable electronics have received considerable attention in recent years. These devices have penetrated every aspect of our daily lives and stimulated interest in futuristic electronics. Thus, flexible batteries that can be bent or folded are desperately needed, and their electrochemical functions should be maintained stably under the deformation states, given the increasing demands for wearable electronics. Carbon nanomaterials, such as carbon nanotubes, graphene, and/or their composites, as flexible materials exhibit excellent properties that make them suitable for use in flexible batteries. Herein, the most recent progress on flexible batteries using carbon nanomaterials is discussed from the viewpoint of materials fabrication, structure design, and property optimization. Based on the current progress, the existing advantages, challenges, and prospects are outlined and highlighted.     

Ultrafast All‐Optical Switching of Germanium‐Based Flexible Metaphotonic Devices

Incorporating semiconductors as active media into metamaterials offers opportunities for a wide range of dynamically switchable/tunable, technologically relevant optical functionalities enabled by strong, resonant light–matter interactions within the semiconductor. Here, a germanium‐thin‐film‐based flexible metaphotonic device for ultrafast optical switching of terahertz radiation is experimentally demonstrated. A resonant transmission modulation depth of 90% is achieved, with an ultrafast full recovery time of 17 ps. An observed sub‐picosecond decay constant of 670 fs is attributed to the presence of trap‐assisted recombination sites in the thermally evaporated germanium film.