Graphene Devices: Structured Graphene Devices for Mass Transport (Small 6/2011)

The reversible atomic‐mass transport along graphene devices has been achieved. The motion of Al and Au in the form of atoms or clusters is driven by applying an electric field between the metal electrodes that contact the graphene sheet. It is shown that Al moves in the direction of the applied electric field whereas Au tends to diffuse in all directions. The control of the motion of Al is further demonstrated by achieving a 90° turn, using a graphene device patterned in a crossroads configuration. The controlled motion of Al is attributed to the charge transfer from Al onto the graphene so that the Al is effectively charged and can be accelerated by the applied electric field. To get further insight into the actuation mechanism, theoretical simulations of individual Al and Au impurities on a perfect graphene sheet were performed. The direct (electrostatic) force was found to be ～1 pN and dominant over the wind force. These findings hold promise for practical use in future mass transport in complex circuits.     

Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis

Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal-insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few-layer-thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic-field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films.     

Controlled Growth of Single-Crystal Graphene Films

Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.     

Graphene: Piecing it together

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.     

Towards Wafer‐Scale Monocrystalline Graphene Growth and Characterization

Since its discovery in 2004, graphene has boosted numerous fundamental sciences and technological applications due to its massless Dirac particle‐like linear band dispersion, that causes unprecedented physical properties. Among the various methods for synthesizing graphene, chemical vapor deposition is the most suitable approach for scalable production on a wafer scale, which is a critical step for practical applications. Graphene grain boundaries (GGBs), consisting of nonhexagonal carbon rings and therefore modulating the properties of graphene films, are inevitably formed via the merging of adjacent graphene domains with different orientations. Large‐area monocrystalline graphene synthesis without forming GGBs has been challenging, let alone observing such boundaries. Here, an up‐to‐date review is presented of how to grow wafer‐scale monocrystalline graphene without GGBs. One approach is to make single domain sizes as large as possible by reducing or passivating the number of nucleation sites. Another approach is to align graphene domains in identical orientations, and then merge them atomically. The recently developed methods for observing graphene orientation and GGBs both at the atomic and macro‐scales are also presented. Finally, perspectives for future research in graphene growth are discussed.     

Exploring the Charge Transport in Conjugated Polymers

Conjugated polymers came to an unprecedented epoch that the charge transport is limited only by small disorder within aggregated domains. Accurate evaluation of transport performance is thus vital to optimizing further molecule design. Yet, the routine method by means of the conventional field‐effect transistors may not satisfy such a requirement. Here, it is shown that the extrinsic effects of Schottky barrier, access transport through semiconductor bulk, and concurrent ambipolar conduction seriously influence transport analysis. The planar transistors incorporating ohmic contacts free of access and ambipolar conduction afford an ideal access to charge transport. It is found, however, that only the planar transistors operating in low‐field regime are reliable to explore the inherent transport properties due to the energetic disorder lowering by the lateral field induced by high drain voltage. This work opens up a robust approach to comprehend the delicate charge transport in conjugated polymers so as to develop high‐performance semiconducting polymers for promising plastic electronics.     

Ordered Single‐Crystalline Anatase TiO2 Nanorod Clusters Planted on Graphene for Fast Charge Transfer in Photoelectrochemical Solar Cells

Achieving efficient charge transport is a great challenge in nanostructured TiO₂‐electrode‐based photoelectrochemical cells. Inspired by excellent directional charge transport and the well‐known electroconductibility of 1D anatase TiO₂ nanostructured materials and graphene, respectively, planting ordered, single‐crystalline anatase TiO₂ nanorod clusters on graphene sheets (rGO/ATRCs) via a facial one‐pot solvothermal method is reported. The hierarchical rGO/ATRCs nanostructure can serve as an efficient light‐harvesting electrode for dye‐sensitized solar cells. In addition, the obtained high‐crystallinity anatase TiO₂ nanorods in rGO/ATRCs possess a lower density of trap states, thus facilitating diffusion‐driven charge transport and suppressing electron recombination. Moreover, the novel architecture significantly enhances the trap‐free charge diffusion coefficient, which contributes to superior electron mobility properties. By virtue of more efficient charge transport and higher energy conversion efficiency, the rGO/ATRCs developed in this work show significant advantages over conventional rGO–TiO₂ nanoparticle counterparts in photoelectrochemical cells.     

Nanomechanical and Charge Transport Properties of Two‐Dimensional Atomic Sheets

The materials properties of graphene and other two‐dimensional atomic sheets are influenced by atomic‐scale defects, mechanical deformation, and microstructures. Thus, for graphene‐based applications, it is essential to uncover the roles of atomic‐scale defects and domain structures of two‐dimensional layers in charge transport properties. This review highlights recent studies of nanomechanical and charge transport properties of two‐dimensional atomic sheets, including graphene, MoS₂, and boron nitrides. Because of intrinsic structural differences, two‐dimensional atomic sheets give rise to unique nanomechanical properties, including a dependence on layer thickness and chemical modification that is in contrast to three‐dimensional continuum media. Mapping of local conductance and nanomechanical properties on a graphene layer can be used to image the domain and microstructures of two‐dimensional atomic layers. This paper also reviews recent experimental and theoretical findings on the role of bending, defects, and microstructures on nanomechanical and transport properties of graphene‐derived materials.     

Microstructural Characterization and Charge Transport in Thin Films of Conjugated Polymers

The performance of semiconducting polymers has been steadily increasing in the last 20 years. Improved control over the microstructure of these materials and a deeper understanding of how the microstructure affects charge transport are partially responsible for such trend. The development and widespread use of techniques that allow to characterize the microstructure of semiconducting polymers is therefore instrumental for the advance of these materials. This article is a review of the characterization techniques that provide information used to enhance the understanding of structure/property relationships in semiconducting polymers. In particular, the applications of optical and X‐ray spectroscopy, X‐ray diffraction, and scanning probe techniques in this context are described.     

Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC

Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000‐1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000‐1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer.     

In Situ Polymerization of Dopamine on Graphene Framework for Charge Storage Applications

Polydopamine, a functional coating material, is redox active as cathode materials for both Li‐ and Na‐ion batteries or hybrid capacitors. Here, a polydopamine coating onto 3D graphene framework is introduced through a simple hydrothermal process, during which graphene oxide serves not only as an oxidant for assisting the polymerization of dopamine, but also as a template for the conformal growth of polydopamine. High‐density films are fabricated by compressing the polydopamine‐coated graphene aerogels, which can be directly used as free‐standing and flexible cathodes in both Li‐ and Na‐cells. The compact electrodes deliver high capacities of ≈230 mAh g⁻¹ in Li‐cells and ≈211 mAh g⁻¹ in Na‐cells based on the total mass of electrodes. These compact electrodes also exhibit exceptional cycling stability and high rate performance due to the unique structure in which polydopamine is uniformly coated on the 3D structured graphene.