共查询到20条相似文献，搜索用时 15 毫秒
1.
Graphene: Controlled Growth of Single‐Crystal Twelve‐Pointed Graphene Grains on a Liquid Cu Surface (Adv. Mater. 37/2014) 
下载免费PDF全文
下载免费PDF全文 Dechao Geng Lan Meng Bingyan Chen Enlai Gao Wei Yan Hui Yan Birong Luo Jie Xu Huaping Wang Zupan Mao Zhiping Xu Lin He Zhiyong Zhang Lianmao Peng Gui Yu 《Advanced materials (Deerfield Beach, Fla.)》2014,26(37):6519-6519
2.
Da Luo Meihui Wang Yunqing Li Changsik Kim Ka Man Yu Yohan Kim Huijun Han Mandakini Biswal Ming Huang Youngwoo Kwon Min Goo Dulce C. Camacho‐Mojica Haofei Shi Won Jong Yoo Michael S. Altman Hyung‐Joon Shin Rodney S. Ruoff 《Advanced materials (Deerfield Beach, Fla.)》2019,31(35)
To date, thousands of publications have reported chemical vapor deposition growth of “single layer” graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer‐free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter‐long ≈100 nm wide “folds,” separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi‐randomly in the polycrystalline graphene film. High‐performance field‐effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer‐free single crystal graphene film. 相似文献
3.
Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (Adv. Mater. 9/2014) 下载免费PDF全文
下载免费PDF全文 Jianyi Chen Yunlong Guo Lili Jiang Zhiping Xu Liping Huang Yunzhou Xue Dechao Geng Bin Wu Wenping Hu Gui Yu Yunqi Liu 《Advanced materials (Deerfield Beach, Fla.)》2014,26(9):1471-1471
4.
5.
Dechao Geng Huaping Wang Yu Wan Zhiping Xu Birong Luo Jie Xu Gui Yu 《Advanced materials (Deerfield Beach, Fla.)》2015,27(28):4195-4199
6.
7.
8.
Shan Liu;Baizhe He;Wei Yang;Xiahong Zhou;Xudong Xue;Mengya Liu;Yao Zhao;Xinhe Wang;Jia Si;Fuyi Wang;Zhiyong Zhang;Lianmao Peng;Gui Yu; 《Advanced materials (Deerfield Beach, Fla.)》2024,36(11):2312125
Twisted bilayer graphene (TBG) generates significant attention in the fundamental research of 2D materials due to its distinct twist-angle-dependent properties. Exploring the efficient production of TBG with a wide range of twist angles stands as one of the major frontiers in moiré materials. Here, the local space-confined chemical vapor deposition growth technique for high-quality single-crystal TBG with twist angles ranging from 0° to 30° on liquid copper substrates is reported. The clean surface, pristine interface, high crystallinity, and thermal stability of TBG are verified by using comprehensive characterization techniques including optical microscopy, electron microscopy, and secondary-ion mass spectrometry. The proportion of TBG in bilayer graphene reaches as high as 89%. In addition, the stacking structure and growth mechanism of TBG are investigated, revealing that the second graphene layer develops beneath the first one. A series of comparative experiments illustrates that the liquid copper surface, with its excellent fluidity, promotes the growth of TBG. Electrical measurements show the twist-angle-dependent electronic properties of as-grown TBG, achieving a room-temperature carrier mobility of 26640 cm2 V−1 s−1. This work provides an approach for the in situ preparation of 2D twisted materials and facilitates the application of TBG in the fields of electronics. 相似文献
9.
Corrugation is a ubiquitous phenomenon for graphene grown on metal substrates by chemical vapor deposition, which greatly affects the electrical, mechanical, and chemical properties. Recent years have witnessed great progress in controlled growth of large graphene single crystals; however, the issue of surface roughness is far from being addressed. Here, the corrugation at the interface of copper (Cu) and graphene, including Cu step bunches (CuSB) and graphene wrinkles, are investigated and ascribed to the anisotropic strain relaxation. It is found that the corrugation is strongly dependent on Cu crystallographic orientations, specifically, the packed density and anisotropic atomic configuration. Dense Cu step bunches are prone to form on loose packed faces due to the instability of surface dynamics. On an anisotropic Cu crystal surface, Cu step bunches and graphene wrinkles are formed in two perpendicular directions to release the anisotropic interfacial stress, as revealed by morphology imaging and vibrational analysis. Cu(111) is a suitable crystal face for growth of ultraflat graphene with roughness as low as 0.20 nm. It is believed the findings will contribute to clarifying the interplay between graphene and Cu crystal faces, and reducing surface roughness of graphene by engineering the crystallographic orientation of Cu substrates. 相似文献
10.
Wei Guo Feng Jing Jian Xiao Ce Zhou Yuanwei Lin Shuai Wang 《Advanced materials (Deerfield Beach, Fla.)》2016,28(16):3152-3158
11.
12.
Controllable fabrication of graphene is necessary for its practical application. Chemical vapor deposition (CVD) approaches based on solid metal substrates with morphology‐rich surfaces, such as copper (Cu) and nickel (Ni), suffer from the drawbacks of inhomogeneous nucleation and uncontrollable carbon precipitation. Liquid substrates offer a quasiatomically smooth surface, which enables the growth of uniform graphene layers. The fast surface diffusion rates also lead to unique growth and etching kinetics for achieving graphene grains with novel morphologies. The rheological surface endows the graphene grains with self‐adjusted rotation, alignment, and movement that are driven by specific interactions. The intermediary‐free transfer or the direct growth of graphene on insulated substrates is demonstrated using liquid metals. Here, the controllable growth process of graphene on a liquid surface to promote the development of attractive liquid CVD strategies is in focus. The exciting progress in controlled growth, etching, self‐assembly, and delivery of graphene on a liquid surface is presented and discussed in depth. In addition, prospects and further developments in these exciting fields of graphene growth on a liquid surface are discussed. 相似文献
13.
14.
Graphene: Layer‐Stacking Growth and Electrical Transport of Hierarchical Graphene Architectures (Adv. Mater. 20/2014) 下载免费PDF全文
下载免费PDF全文 Birong Luo Bingyan Chen Lan Meng Dechao Geng Hongtao Liu Jie Xu Zhiyong Zhang Hantang Zhang Lianmao Peng Lin He Wenping Hu Yunqi Liu Gui Yu 《Advanced materials (Deerfield Beach, Fla.)》2014,26(20):3355-3355
15.
16.
Donglin Ma Mengxi Liu Teng Gao Cong Li Jingyu Sun Yufeng Nie Qingqing Ji Yu Zhang Xiuju Song Yanfeng Zhang Zhongfan Liu 《Small (Weinheim an der Bergstrasse, Germany)》2014,10(19):4003-4011
The segregation of carbon from metals in which carbon is highly soluble, such as Ni (≈1.1 atom% at 1000 °C), is a typical method for graphene growth; this method differs from the surface‐catalyzed growth of graphene that occurs on other metals such as Cu (<0.04 atom%). It has not been established whether strictly monolayer graphene could be synthesized through the traditional chemical vapor deposition route on metals where carbon is highly soluble, such as Pd (≈3.5 atom%). In this work, this issue is investigated by suppressing the grain boundary segregation using a pretreatment comprising the annealing of the Pd foils; this method was motivated by the fact that the typical thick growths at the grain boundaries revealed that the grain boundary functions as the main segregation channel in polycrystalline metals. To evaluate the high crystallinity of the as‐grown graphene, detailed atomic‐scale characterization with scanning tunneling microscopy is performed. 相似文献
17.
Jingyu Sun Yubin Chen Manish Kr. Priydarshi Teng Gao Xiuju Song Yanfeng Zhang Zhongfan Liu 《Advanced materials (Deerfield Beach, Fla.)》2016,28(46):10333-10339
Recently, direct chemical vapor deposition (CVD) growth of graphene on various types of glasses has emerged as a promising route to produce graphene glass, with advantages such as tunable quality, excellent film uniformity and potential scalability. Crucial to the performance of this graphene‐coated glass is that the outstanding properties of graphene are fully retained for endowing glass with new surface characteristics, making direct‐CVD‐derived graphene glass versatile enough for developing various applications for daily life. Herein, recent advances in the synthesis of graphene glass, particularly via direct CVD approaches, are presented. Key applications of such graphene materials in transparent conductors, smart windows, simple heating devices, solar‐cell electrodes, cell culture medium, and water harvesters are also highlighted. 相似文献
18.
Recently developed chemical vapor deposition (CVD) is considered as an effective way to large‐area and high‐quality graphene preparation due to its ultra‐low cost, high controllability, and high scalability. However, CVD‐grown graphene film is polycrystalline, and composed of numerous grains separated by grain boundaries, which are detrimental to graphene‐based electronics. Intensive investigations have been inspired on the controlled growth of graphene single crystals with the absence of intrinsic defects. As the two most concerned parameters, the size and morphology serve critical roles in affecting properties and understanding the growth mechanism of graphene crystals. Therefore, a precise tuning of the size and morphology will be of great significance in scale‐up graphene production and wide applications. Here, recent advances in the synthesis of graphene single crystals on both metals and dielectric substrates by the CVD method are discussed. The review mainly covers the size and morphology engineering of graphene single crystals. Furthermore, recent progress in the growth mechanism and device applications of graphene single crystals are presented. Finally, the opportunities and challenges are discussed. 相似文献
19.
Graphene synthesized by chemical vapor deposition (CVD) on metal substrates has attracted tremendous attention due to its high growth‐quality, scalability, and high structural tunability, which holds great promise in a wide range of applications. In most cases, CVD graphene on metals must be transferred to target substrates and the intact/clean and efficient transfer of large‐area graphene remains challenging, thus greatly hindering the practical applications of CVD‐grown graphene in high‐performance devices. Here, the representative methods of transferring CVD graphene are discussed from the perspective of their impacts on the structural integrity and contamination of graphene as well as their scalability. Particularly, the principles, advantages, and limitations are highlighted in various methods. 相似文献
20.
Yixuan Fan Lin Li Gui Yu Dechao Geng Xiaotao Zhang Wenping Hu 《Advanced materials (Deerfield Beach, Fla.)》2021,33(1)
Large‐scale and high‐quality 2D materials have been an emerging and promising choice for use in modern chemistry and physics owing to their fascinating property profile. The past few years have witnessed inspiringly progressing development in controlled fabrication of large‐sized and single‐crystal 2D materials. Among those production methods, chemical vapor deposition (CVD) has drawn the most attention because of its fine control over size and quality of 2D materials by modulating the growth conditions. Meanwhile, Cu has been widely accepted as the most popular catalyst due to its significant merit in growing monolayer 2D materials in the CVD process. Herein, very recent advances in preparing large‐sized 2D single crystals on Cu substrates by CVD are presented. First, the unique features of Cu will be given in terms of ultralow precursor solubility and feasible surface engineering. Then, scaled growth of graphene and hexagonal boron nitride (h‐BN) crystals on Cu substrates is demonstrated, wherein different kinds of Cu surfaces have been employed. Furthermore, the growth mechanism for the growth of 2D single crystals is exhibited, offering a guideline to elucidate the in‐depth growth dynamics and kinetics. Finally, relevant issues for industrial‐scale mass production of 2D single crystals are discussed and a promising future is expected. 相似文献