E类放大电路中晶体管的功率损耗

在理想情况下,E类放大电路的效率可以达到100%,因此E类放大电路适用于高功率,高频率电路的设计,但在实际情况下,由于所有的器件都不是理想的。例如,电感、电容中会有寄生电阻的存在,晶体管的饱和电压,饱和电阻以及集电极电流的下降时间不为零,这些因素的存在都会导致E类放大电路的效率降低,但当电路的负载匹配且处于谐振状态,则引起电路功率损耗的主要因素也就是晶体管中的功率损耗。对E类放大电路中由晶体管引起的损耗进行分析,并得出简单的估算方法,并用实验的方法验证。     

Effects of the collector current fall time on the class E tuned power amplifier

Presents the equations governing the operation of the amplifier when the collector current fall time during the on-to-off transition of the transistor is an appreciable fraction of the signal period. A current-source model of the transistor with a linearly decreasing collector current during the fall time is used. The following basic amplifier parameters are determined: the waveforms of the collector current, the collector-to-emitter voltage, the instantaneous power dissipated in the transistor, the optimum values of the load-network components, the output power, the power-output capability, and the collector efficiency. The decrease of the collector efficiency is e.g. 10 percent at 60/spl deg/ fall time. Experimental results are also given. The author shows the behavior of the class E amplifier at higher operating frequencies and provides more accurate circuit design procedure.     

Exact analysis of class E tuned power amplifier with only one inductor and one capacitor in load network

Presents an exact analysis of that amplifier, an accurate and simple design procedure, and experimental results which confirm the theoretical analysis. The following performance parameters are determined for optimum operation with any switch duty ratio: the current and voltage waveforms, the peak values of collector current and collector-to-emitter voltage, the output power, the power-output capability, and the component values of the load network. The output harmonic spectrum is given for several values of switch duty ratio. The transistor power losses and collector efficiency are also estimated. The measured collector efficiency was over 95 percent with 3 W output power at 1 MHz, using a BSX60 TO-39 transistor.     

高效率开关F3/E类功率放大器

介绍了一种高效F3/E类功率放大器的设计方法,该放大器将F类功率放大器的谐波控制电路引入逆E类功率放大器的负载网络,以改善放大器性能。此电路结构提升了放大器的功率输出能力,降低了电路对功率放大器管器件漏极耐压特性的要求,增强了器件工作时的安全性。详细阐述了该放大器的设计过程,并给出了负载网络各器件的最佳设计取值方程。选用GaNHEMT器件研制了S频段F3/E类功率放大器测试电路。实测结果表明该放大器在驱动功率为27 dBm时,可获得40.3 dBm的输出功率,具有13.3 dB增益,工作效率高达78.1%,功率附加效率为75.2%。实测结果与仿真结果吻合,验证了设计方法的正确性。     

High-Efficiency Broadband Parallel-Circuit Class E RF Power Amplifier With Reactance-Compensation Technique

Class E amplifier offers high efficiency approaching 100% for an ideal case. This paper introduces a first practical implementation of a novel broadband class E power amplifier design combining a parallel-circuit load network with a reactance compensation technique. The novel broadband parallel-circuit class E load network using reactance compensation technique has been discussed based on theory and its experimental verification. A proper guidelines method of designing a high-efficiency broadband class E power amplifier with an LDMOS transistor until the final prototype measurement and optimization will be discussed. In the measurement level, the drain efficiency of 74% at an operating power of 8 W and power flatness of 0.7 dB are achieved across a bandwidth of 136-174 MHz. The efficiency result is the highest result for VHF broadband frequency to date with a low supply voltage of 7.2 V. Simulations of the efficiency, output power, drain voltage waveform, and load angle (impedance) were verified by measurements and good agreements were obtained.     

Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance

A CMOS cascode class E power amplifier has been designed at 5.2 GHz. Its RF performances such as output and power-added efficiency have been examined in ADS simulation. The layout parasitic is accounted for in the post-layout simulation. Time-dependent drain-source voltage waveforms indicate that the drain of cascode transistor is subject to much higher voltage stress than that of main transistor. Analytical equation of output power including impact of gate-oxide breakdown is developed and compared with RF simulation results. Good agreement between the model predictions and ADS simulation is obtained. The gate-drain breakdown of the cascode transistor decreases the output power and power-added efficiency of the power amplifier significantly when the breakdown resistance is below 1 kΩ.     

Design of a negative conductance dielectric resonator oscillator for X-band applications

An X-band tunable microwave low-phase noise planar oscillator employing a novel-fed dielectric resonator (DR) with a single transistor has been investigated and realized. A ZrSnTi oxide composite ceramic-based DR with dielectric permittivity of 95 enclosed in a metallic cavity with an unloaded Q factor of 5,000 at 10 GHz is proposed. The resonant frequency affinity with respect to geometric parameters is established by using the compensation technique based on dual negative conductance feedback, the outputs of which are combined via a Wilkinson power divider (WPD). The feedback parallel-coupled DR oscillator is incorporated into a laminate microwave board using the photolithographic technique. The oscillator includes a pseudomorphic low noise amplifier based on a high-electron-mobility transistor. Hence, the proposed oscillator with mechanic tuning is measured, and the results show that DR resonates at TE _01δ mode with frequency of 10 GHz. The measured phase noise of the oscillator is –81.03 dBc/Hz at a 100 kHz offset.     

MEMSE类放大器

对采用 MEMS开关的 E类放大器进行了原型仿真 ,并且通过工艺流片制作 MEMS开关 ,搭建 E类放大器电路进行测试 .测试结果显示 ,这种机械式的放大器同样能实现有源放大器的功能 .测试得到的放大器实际效率与原型模拟结果一致 ,而放大器的功率增益高达 2 0 0 0 .     

AB类功率放大器的设计与仿真研究

在比较A类、B类、C类和介于A类、B类中间的AB类四类功放电路各自优缺点的基础上,提出功率放大器工作点的选取以及通过阻抗匹配来实现高效率的方法。讨论了放大器输入回路阻抗变换电路、晶体管放大电路以及输出回路阻抗变换电路的设计思想,运用电报方程从理论上推导出用于信号源和晶体管之间阻抗变换的传输线变压器输入输出阻抗计算公式,由此设计出模拟信号处理电路中非常重要的AB类高功率放大器。仿真和实验结果表明,放大器在1MHz～50MHz的范围内,输入0．1w时输出为1w,其增益达到10dB,并且失真率非常低。     

应用于4G-LTE无线通信系统的F类高PAE射频功率放大器

为了有效实现高谐波抑制并提高功率附加效率,提出了一种适用于4G-LTE无线通信系统的高效F类功率放大器。该功率放大器使用了低电压p-HEMT晶体管和小型微带抑制单元,能够在低射频输入功率下产生n次谐波抑制和较高的功率附加效率（power added efficiency,PAE）。采用谐波平衡法对提出的功率放大器进行了仿真分析,并对其进行了实际制造。通过实际测量对仿真结果进行了验证。测量结果显示,提出功率放大器的工作频率为1.8 GHz,带宽为100 MHz,平均PAE为76.9％,且具有2V的极低漏极电压。射频输入功率范围分别为0-12 dBm时,最大输出功率和增益分别为23.4和17.5 dBm。     

高效率E 类功放在遥测发射机中的应用

对提升PCM发射机工作效率的关键技术进行阐述。采用GaN器件设计了S频段具有谐波控制电路的逆E类功率放大器,输出功率10W,工作效率高达78%。将此高效功率放大技术用于PCM遥测发射机设计。实测结果表明,该发射机可适应码速率2Mbps的PCM信号,发射功率9.8W,整机效率可达57.6%。     

逆F类高效氮化镓Doherty射频功率放大器设计*

逆F 类功放在接近饱和区工作时效率很高,将其与Doherty 功放结构相结合,可以实现一种在大功率回退的情况下仍然具有很高效率的射频功率放大器。本文设计了一款基于GaN HEMT 晶体管的高效率的逆F 类Doherty 功率放大器,工作频带为910MHz-950MHz。单音信号测试结果显示,在930MHz 处,功放回退7.5dB 后漏极效率仍高达64.2%。使用3 载波WCDMA信号作为测试信号,利用数字预失真技术进行线性化后,功放输出信号的上下边带邻信道功率比(ACPR)分别为-35.39dBc 和-35.9dBc。     

Class E tuned power amplifier with shunt inductor

The `class E tuned power amplifier with a shunt inductor' is presented. It offers a DC-to-RF power conversion efficiency approaching 100 percent. The proposed circuit of the amplifier uses a shunt inductor instead of a shunt capacitor. The conditions for optimum operation are formulated and discussed. The following are determined: the waveforms, the fundamental-frequency components, the peak values of the collector current and voltage, the output power, and the values of the load network elements. Experimental results are also presented. The proposed amplifier circuit minimizes the power dissipated during the on-to-off transition, even if the switching time is an appreciable fraction of the signal period.     

A Technique for the Design of Microwave Transistor Oscillators (Short Paper)

A technique for the design of microwave transistor oscillators is presented in which measurements made on an experimentally optimized amplifier are used to calculate six basis oscillator circuits which yield maximum power output. The procedure has been experimentally verified by the construction of a silicon bipolar transistor test oscillator at 1 GHz.     

Microwave YIG-tuned transistor oscillator amplifier design: application to C band

An approach to the design of a microwave YIG-tuned transistor oscillator amplifier is discussed in this paper. A classic lumped-element model of the transistor is used to show that a simple but still accurate equivalent circuit can be useful in predicting the effect of transistor parameters on the tuning range of a microwave oscillator. On the other hand, this paper describes a design procedure `without model' based on the small-signal characterization of the transistor by its scattering matrix. This method is particularly suited to amplifier designing since scattering parameters are inherently power-flow parameters and well adapted to computer-aided design (CAD) and optimization techniques. A 3.0-6.5 GHz YIG-tuned transistor oscillator amplifier with 10 mW of output power illustrates the usefulness of these two methods.     

宽带小型化限幅放大器设计

基于共集共基电路的宽带小型化限幅放大器设计,利用三极管发射结特有的IV特性,将输入三极管工作在共集组态,并在后级级联共基组态三极管,实现输入信号非饱和削波,达到限幅目的。由于共集与共基放大电路都具有宽带特性,故其级联后电路特性也具有宽带特性。本文利用该结构设计了一款宽带限幅放大器,工作带宽覆盖10~200 MHz,增益大于25 dB,限幅输出功率2 dBm,输入输出回波损耗均大于20 dB。利用薄膜电路工艺设计实现小型化限幅放大器设计,电路尺寸为7.15 mm×8.1 mm,与印制板(PCB)电路相比,尺寸明显较小。该电路结构精简,性能优越,适合分离元件电路设计。     

Low voltage, high efficiency GaAs Class E power amplifiers forwireless transmitters

A Class E power amplifier for mobile communications is presented. The advantages of Class E over Class B, Class C, and Class F power amplifiers in a low voltage design are discussed. A fully integrated Class E power amplifier module operating at 835 MHz is designed, fabricated, and tested. The circuit is implemented in a self-aligned-gate, depletion mode 0.8-μm GaAs MESFET process. The amplifier delivers 24 dBm of power to the 50-Ω load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 1.5 times the power dissipated in the transistor     

高效率Class F功率放大器的设计

本文基于InGaP/GaAs HBT(HBT为异质结双极晶体管)工艺设计了一款高效率的Class F功率放大器。文中首先描述了F类功率放大器的特点和电路原理,然后对放大器的设计过程如匹配电路设计技术、谐波抑制对功率效率的影响,以及偏置电路的设计等问题做了详细的讨论。测试结果表明,设计的功率放大器在电源电压为5V,输出功率为37dBm时,效率达68%。     

Comments on `Class E tuned power amplifier with shunt inductor'

Expressions are given for the power dissipation associated with transistor saturation voltage and parasitic capacitance across the transistor in a class E tuned power amplifier with shunt inductor.     

Power feedthrough via C/SUB cb/ in common-emitter class C RF power amplifiers-a commonly believed fallacy

It is suggested that the assumption that the direction of power flow through C/SUB cb/ of the transistor is necessarily from the input-drive source to the amplifier output is a fallacy. Depending on the collector circuit tuning, RF power may be fed to the drive source from the amplifier, or vice versa, or zero RF power may be exchanged through C/SUB cb/. The importance of a correct understanding of this subject is emphasized. It can guide the engineer in designing amplifiers which have higher power gain, higher collector efficiency, more margin of stability against oscillation, and which function properly by design instead of by luck. Circuit operation is explained with reference to experimental voltage and current waveforms.