Cu基体离子镀Al膜的相结构及晶体学位向关系

本文用Ｘ射线衍射仪和透射电子显微镜研究了 Ｃｕ基体离子镀 Ａl膜的相结构及 晶体学位向关系。 Ｘ射线衍射分析结果表明了 Ｃｕ－Ａl过渡层中各合金相的存在并发 现负偏压和极间距是影响合金相形成的主要因素。两者的变化将影响表面温度的升高。 每一个Ｃu－Ａl合金相图中存在的中间相在Ｃｕ基离子镀Ａ１膜的过渡层中的存在都 对应一个温度区间．在极间距一定的情况下，该温度区间对应着负偏压的区间。极间距 加大，该负偏压区间升高。用透射电镜观察了一定工艺参数下的 Ｃu基离子镀 Ａl膜， 发现了与Ｘ射线分析结果相对应的一系列合金相的存在．它们是，ＡＬ＿４Ｃｕ＿９（Ｃｏｍｐｌｅx Ｃｕｂｉｃ），ＡlＣｕ_3（Ｏｒｔｈｏｒｈｏｍｂｉｃ），ＣｕＡ１_２（Ｐｒｉｍｉtｉｖｅ Ｔｅｔｒａgｎａｌ）， ＡlＣｕ （Primitive Monoclinie)及AlCu_4(Cubic).观察了合金相的形态并确定了合 金相与基体 Ｃｕ及股 Ａl 间的晶体学位向关系。     

负偏压对PET上磁控溅射氧化铝薄膜的影响

以PET(对苯二甲酸已二醇脂)为基体,采用磁控溅射方法在其上制备Al2O3阻隔膜,研究负偏压对基体温度、镀膜表面形貌和镀膜化学成份的影响.研究表明,基体温度随着负偏压的增加而升高;Al2O3薄膜的表面形貌随着负偏压的增加粗糙度显著降低.XPS分析表明薄膜是满足化学成分配比的AlO3,而且薄膜的成分在较大的负偏压的范围内保持稳定;适当的负偏压有利于提高薄膜的阻隔性.     

脉冲偏压下沉积的立方氮化硼膜的断面结构研究

采用自行研制的磁增强活性反应离子镀系统，在脉冲偏压条件下成功地合成了高品质立方氮化硼（c-BN）薄膜。用傅立叶变换红外谱（FTIR）分析沉积膜的相结构，用透射电镜（TEM）及高分辨率透射电镜（HRTEM）分析膜的断面结构。FTIR结果表明：c-BN的纯度强烈地受基片负偏压 的影响，当基片负偏压为155V，c-BN膜的纯度高达90%以上，TEM及HRTEM对膜的断面结构分析表明，在膜与基片的界面处存在很薄的非晶氮化硼和六万氮化硼（h-BN）层，h-BN（0002）晶面垂直于基片段面，在界面层之上生长着单相c-BN层。     

衬底偏压和退火对ITO膜结构和成分的影响

ＩＴＯ膜的结构直接决定其光电性质，因而对其结构的研究就显得极其重要。本文报 道了不同衬底偏压和不同退火温度对ＩＴＯ膜结构的影响。结果表明，一定负偏压有助 于（２２２）晶面择优生长，一定退火温度有助于（６２２）晶面择优生长。退火与否，对膜中 Ｉｎ、Ｓｎ含量影响不大。     

约瑟夫森结Nb电极的实验研究

通过溅射Ｎｂ膜张力与氩（Ａｒ）压强的关系，超导转变温度Ｔｃ，室温阻抗与液氮温度阻抗比ＲＲＴ／ＲＬＮ２，沉积中Ａｒ浓度ＣＡｒ与负偏压关系的测量和扫描电子显微镜的观察分析，对约瑟夫森结Ｎｂ电极作了研究。发现Ａｒ压强在１．１Ｐａ时，Ｎｂ膜呈现无应力状态；低负偏压下沉积的Ｎｂ膜晶粒结构是由致密膜到圆柱状。在偏压Ｕｂ＝－５０Ｖ时，获得表面致密均匀、晶粒结构合适的Ｎｂ膜。对Ｎｂ膜用阳极氧化电压谱图（ＡＶＳ）分     

基底负偏压对直流磁控溅射CrN薄膜择优取向及表面形貌的影响

直流磁控溅射法制备不同基底负偏压下的CrN薄膜,采用XRD分析薄膜相结构,EDS分析薄膜表面成分,SEM观察薄膜表面形貌,并对偏压作用机制进行了探讨。结果表明,当Ar流量6ml/min、N2流量30ml/min时,在基底负偏压增大过程中,CrN薄膜始终由CrN相组成,但薄膜生长发生了(111)(-50V)向(200)(-125V)再向无明显择优生长(-225V)的转变。低偏压时,CrN薄膜[111]向[200]取向转变主要是轰击表面氮离子浓度增加导致;高偏压时,薄膜中Ar浓度大幅增长,高能离子长时间轰击破坏晶粒取向性,使薄膜呈无择优取向。同时,负偏压增加使薄膜表面形貌从具有棱角的不规则形状逐渐变为粒状结构,且晶粒逐渐细小。     

约瑟夫森结Nb电极的实验研究

通过溅射Nb膜张力与氩（Ar）压强的关系，超导转变温度Tc，室温阻扰与液氮温度阻抗比RRT／RLN2，沉积中Ar浓度CAr与负偏压关系的测量和扫描电子显微镜的观察分析，对约瑟夫森结Nb电极作了研究。发现Ar压强在1．1Pa时，Nb膜呈现无应力状态；低负偏压下沉积的Nb膜晶粒结构是由致密膜到圆柱状。在偏压Ub＝－50V时，获得表面致密均匀、晶粒结构合适的Nb膜。对Nb膜用阳极氧化电压谱图（AVS）分析，证实沉积的Nb膜内不存在氧化物、寄生结和分层界面。     

脉冲偏压对等离子体沉积DLC膜化学结构的影响

以乙炔为气源，用等离子体基脉冲偏压沉积（plasma based pulsd bias deposition缩写PBPBD）技术进行了不同负脉冲偏压条件下制备DLC膜的试验，通过X射线光电子谱（XPS）、激光喇曼光谱[Raman]以及电阻分析方法考察了负脉冲偏压幅值对DLC膜化学结构的影响，结果表明由-50kV到-10kV随负脉冲偏压降低，DLC膜中SP^3键分数单调增加，但当脉冲偏压为0时形成高电阻的类聚合物膜，说明荷能离子的轰击作用形成DLC化学结构的必要条件，键角混乱度和SP^2簇团尺寸与脉冲偏压之间不具有单调关系，在中等幅值负脉冲偏压条件下，键用混乱度较大且SP^2簇团尺寸细小。     

真空阴极电弧制备TiAlN涂层的硬度及摩擦学性能研究

采用真空阴极电弧制备了TiAlN涂层,研究了N2气压和基体负偏压对涂层硬度的影响规律,分析了涂层的致硬机理,探讨了硬度对摩擦学性能的影响。结果表明,N2降低入射离子能量,降低增原子扩散,导致晶粒细化;基体负偏压增大入射离子能量,导致涂层致密化并依次出现(200)、(111)、(220)、(200)择优取向。TiAlN涂层的硬度受Ti、Al、N原子间键能,生长面择优取向及晶粒显微组织的影响,其中最薄弱因素起决定作用。摩擦学性能研究表明,高硬度TiAlN涂层易形成磨粒磨损,摩擦系数和磨损率高;低硬度TiAlN涂层易发生粘着磨损,摩擦系数和磨损率低。     

低偏压下化学气相沉积金刚石薄膜的生长形貌研究

在微波等离子体化学气相沉积装置中，研究了偏压电压、甲烷浓度及沉积气压对金刚石晶形显露的影响。实验结果表明，生长时施加低的衬底偏压对金刚石的晶形显露有较大的影响，正的偏压有利于(111)面显露，负偏压有利于(100)面显露。在低偏压条件下生长时，低的沉积气压和甲烷浓度有利于(111)面显露；而高的气压和甲烷浓度有利于(100)面显露。过高的甲烷浓度将恶化金刚石质量，出现菜花状组织，无明显的晶面显露。     

Microstructure and mechanical properties of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering on AISI H13 steel

CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. At the modified ion beam bombardment, the effects of bias voltage and Al/(Cr + Al) ratio on microstructure and mechanical properties of the coatings were studied. The X-ray diffraction data showed that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, showing the (111), (200), and (220) preferential orientation. It is noted that the (111) diffraction peak intensity decreased and the peaks broadened as the bias voltage increased at the same ratio of Al/Cr targets power, which is attributed to the variation in the grain size and microstrain. The microstructure observation of the coatings by field emission scanning electron microscopy cross-section morphology shows that the columnar grain became more compact and dense with increasing substrate bias voltage and Al concentration. At a substrate bias voltage of −120 V and a Al/(Cr + Al) ratio of 40%, the coating had the highest hardness (33.8 GPa) and excellent adhesion to the substrate.     

CrAlN抗冲蚀涂层制备及性能研究

为提高钛合金材料抗冲蚀性能,利用真空阴极电弧沉积技术在TC11钛合金上沉积CrAlN涂层,研究靶电流、偏压和气压对涂层结构及性能的影响。采用扫描电镜观察膜层表面和截面形貌,金相显微镜对表面的大颗粒进行定量分析;显微硬度计测量膜层的维氏显微硬度;采用喷砂试验机对涂层的抗冲蚀性能进行测试,通过三维表面轮廓仪测量涂层厚度和侵蚀坑的深度;X射线衍射仪表征涂层中的晶体结构。结果表明:靶电流从70A增大到110A,虽可提高涂层的沉积速率,但会导致涂层表面大颗粒增加,从而降低涂层的抗冲蚀性能;气压从1Pa增大至4Pa,可有效地减少涂层表面颗粒的尺寸及数量,但也会一定程度降低沉积速率及硬度;偏压对CrAlN涂层的结构及性能影响最大,偏压在-50V时涂层呈(200)择优取向,-100V涂层呈(111)择优取向,-200V时,涂层择优取向不明显;且随着偏压的增加,涂层的硬度及抗冲蚀性能增大,在高冲蚀角下,冲蚀的失效机理为脆性失效。结论:工艺参数中靶电流对表面质量的影响最大;涂层的生长取向与偏压密切相关;CrAlN涂层的表面质量及硬度直接影响其抗砂粒冲蚀性能,偏压对涂层抗冲蚀性能影响最大。最终优化的工艺参数...     

脉冲偏压幅值对TiN／TiAlN多层薄膜微观结构和性能的影响

采用电弧离子镀的方法,通过改变脉冲偏压幅值在M2高速钢表面制备了TiN／TiAlN多层薄膜,研究了脉冲电压幅值TiN／TiAlN多层薄膜微观结构和性能的变化。随着脉冲偏压幅值的增加,薄膜表面的大颗粒数目明显减少。EDX结果表明,脉冲偏压幅值的增加还引起Al／Ti原子比的降低。TiN／TiAlN多层薄膜主要以（111）晶...     

Effect of bias voltage on microstructure and mechanical properties of arc evaporated (Ti, Al)N hard coatings

In the present study, authors report on the effect that substrate bias voltage has on the microstructure and mechanical properties of (Ti, Al)N hard coatings deposited with cathodic arc evaporation (CAE) technique. The coatings were deposited from a Ti _{0· 5}Al _{0· 5} powder metallurgical target in a reactive nitrogen atmosphere at three different bias voltages: U _B ?=??? 25, ?50 and ?100 V. The coatings were characterized in terms of compositional, microstructural and mechanical properties. Microstructure of the coatings was investigated with the aid of X-ray diffraction in glancing angle mode, which revealed information on phase composition, crystallite size, stress-free lattice parameter and residual stress. Mechanical properties were deduced from nano-indentation measurements. The residual stress in all the coatings was compressive and increased with increasing bias voltage in a manner similar to that reported in literature for Ti–Al–N coatings deposited with CAE. The bias voltage was also found to significantly influence the phase composition and crystallite size. At ?25 V bias voltage the coating was found in single phase fcc-(Ti, Al)N and with relatively large crystallites of ~ 9 nm. At higher bias voltages (?50 and ?100 V), the coatings were found in dual phase fcc-(Ti, Al)N and fcc-AlN and the size of crystallites reduced to approximately 5 nm. The reduction of crystallite size and the increase of compressive residual stress with increasing bias voltage both contributed to an increase in hardness of the coatings.     

工艺参数对阴极电弧离子镀ZrN薄膜表面形貌及结构的影响

本文采用阴极电弧离子镀技术制备了ZrN膜层,研究了工作气压、偏压、弧流等工艺参数对ZrN膜层表面形貌和结构的影响,分别用扫描电镜(SEM)、X射线衍射仪(XRD)分析了膜层的表面形貌及相结构。结果表明:工作气压、偏压、弧电流等工艺参数对ZrN膜层的表面形貌有较大的影响,在本实验内适当提高N2压强、偏压以及在稳弧前提下降低弧流有利于减少大颗粒,改善ZrN膜层表面形貌,提高膜层综合性能;不同工艺参数下制备的ZrN膜层均具有典型的面心立方结构,工作气压和弧电流对ZrN膜层晶体生长方向的影响较小,偏压对晶体生长方向的影响显著,在20 V偏压下,晶体呈(200)面择优取向,继续提高偏压(100 V~300 V),晶体生长呈(111)面择优取向。     

Influence of Substrate Negative Bias on Structure and Properties of TiN Coatings Prepared by Hybrid HIPIMS Method

TiN coatings were deposited using a hybrid home-made high power impulse magnetron sputtering(HIPIMS)technique at room temperature.The effects of substrate negative bias voltage on the deposition rate,composition,crystal structure,surface morphology,microstructure and mechanical properties were investigated.The results revealed that with the increase in bias voltage from-50 to-400 V,TiN coatings exhibited a trend of densification and the crystal structure gradually evolved from(111) orientation to(200)orientation.The growth rate decreased from about 12.2 nm to 7.8 nm per minute with the coating densification.When the bias voltage was-300 V,the minimum surface roughness value of 10.1 nm was obtained,and the hardness and Young's modulus of TiN coatings reached the maximum value of 17.4 GPa and 263.8 GPa,respectively.Meanwhile,the highest adhesion of 59 N was obtained between coating and substrate.     

负偏压与磁场对微弧氧化涂层表面结构的影响

为了揭示真空条件下氩离子、氩离子/负偏压、靶材/负偏压三种清洗工艺,以及负偏压与磁场协同作用对微弧氧化(MAO)涂层表面结构、厚度、硬度及粗糙度的影响规律,采用MAO和多弧离子镀技术在镁合金AZ31B表面制备镀层,利用扫描电子显微镜考察镀层的微观形貌;纳米压痕仪、测厚仪、粗糙度仪等手段考察镀层的厚度、硬度以及粗糙度随处理工艺变化的规律。当靶基距离为380 mm时,氩离子清洗的MAO涂层表面无明显变化;氩离子与负偏压协同作用时,MAO涂层表面的突起物随负偏压增加而减少,清洗效果变好;但负偏压超过500 V时,二者协同作用形成深孔而破坏了MAO涂层,失去MAO涂层对镁合金基体的保护作用。当Al靶与负偏压协同清洗时,负偏压超过200 V也致使MAO涂层呈现深孔特征。引入磁场沉积MAO/Al镀层时,由于磁场的磁过滤作用使得镀层表面沉积物分布均匀,无明显大颗粒熔滴。施加负偏压清洗容易破坏MAO涂层的表面结构,其与氩离子协同清洗时不应高于500 V,与铝靶协同清洗时应不高于200 V。与单一的负偏压或磁场沉积镀层相比,二者协同作用能获得致密均匀的厚MAO/Al镀层。     

Physical and mechanical properties of reactively sputtered chromium boron nitride thin films

This paper reports on the first study of physical and mechanical properties of reactively sputtered chromium boron nitride coatings as a function of chemical composition, bias voltage and substrate temperature. Several sets of coatings were deposited by reactive unbalanced magnetron sputtering on Si(100) substrates. The chemical composition was deduced from X-ray photoelectron spectroscopy and Auger electron spectroscopy measurements, and was found to be influenced primarily by nitrogen flow rate. The phase composition was determined using X-ray diffraction in conjunction with spectroscopic ellipsometry. Atomic force microscopy was utilized to determine surface roughness and average surface grain size. Both surface roughness and surface grain size were largely independent of the nitrogen concentration and decreased with increasing bias voltage. The nanohardness and elastic modulus of each sample were measured by nanoindentation. The hardest films were produced using −150 V bias voltage and either very low (0.5-1 sccm) or very high (12-15 sccm) nitrogen flow rates.     

糖精对脉冲电沉积镍层结构及性能的影响

利用脉冲电沉积制备细晶镍镀层。研究了糖精对镍镀层的晶粒尺寸、表面形貌、晶体取向和硬度的影响。结果表明：加入糖精后,可获得晶粒尺寸小于30nm的镍镀层,晶体择优取向由（200）织构向（111）织构转变,镀层的耐蚀性得到提高;镀层的硬度与镍镀层的晶粒尺寸有关,晶粒尺寸较大时,服从Hall—Petch关系,晶粒尺寸较小时产生...     

Effect of substrate bias voltage on structural and mechanical properties of pulsed DC magnetron sputtered TiN-MoSx composite coatings

TiN-MoS_x composite coatings were deposited by pulsed DC closed-field unbalanced magnetron sputtering (CFUBMS) using separate Ti and MoS₂ targets in an Ar and N₂ gas environment. The effect of substrate bias voltage on the structure and mechanical properties of TiN-MoS_x composite coating has been studied. The structure and composition of the coating were evaluated using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) by X-ray and grazing incidence X-ray diffraction (GIXRD). Scratch adhesion tests, Vickers microhardness tests and ball-on-disc tests with a cemented carbide (WC-6%Co) ball were carried out to investigate mechanical properties of the coating. Application of substrate bias was found to transform the structure of TiN-MoS_x composite coating from open columnar to a dense columnar structure. The changes in grain size and texture coefficient appear to be associated with variation in substrate bias voltage. The mechanical properties of the coating such as adhesion and composite microhardness were also observed to be related to the change in bias voltage. A maximum hardness of 22 GPa was obtained for a coating deposited at substrate bias voltage of −40 V. The improved structural and mechanical properties of the coating deposited at −40 V were also reflected in its excellent wear resistance property.