微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石

研究了衬底温度、核化密度、衬底表而预处理等工艺参数对微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石的影响.采用扫描电镜、X-射线衍射、喇曼光谱和红外光谱对样品进行了表征.结果表明:从高核化密度生长的金刚石膜中探测不到碳化硅;不论对硅衬底进行抛光预处理还是未抛光预处理,从低核化密度牛长的金刚石厚膜中总能探测到碳化硅.碳化硅生长在硅衬底上未被金刚石覆盖的地方,或者是在金刚石晶核之间的空洞处.碳化硅形成和金刚石生长是同时发生的两个竞争过程.此研究结果为制备金刚石和碳化砟复合材料提供了一种新的方法.     

射频辉光放电等离子体化学气相沉积类金刚石膜的性能研究

用自行设计的RF PCVD(射频辉光放电等离子体化学气相沉积 )设备沉积类金刚石膜 ,并对膜的力学、光学、化学性能进行了分析。表明用该设备制备的类金刚石膜具有显微硬度高、磨擦系数小、膜基结合力高、对红外有良好的增透性 ,并且耐磨耐蚀、化学稳定性好。     

微波等离子体化学气相沉积金刚石簿膜

建立了一台微波等离子体化学气相沉积金刚石薄膜的设备。该实验装置由以下几部分组成：微波源及传输系统、反应室、供气系统、真空系统和检测等五部分组成。沉积室是由长７０ｍｍ直径４６ｍｍ的石英管组成的。分别采用ＣＨ４／Ｈ２和ＣＯ／Ｈ２混合气体进行了沉积试验；研究了沉积参数对沉积金刚石膜的影响。在直径３０ｍｍ的单晶硅片和石英片上沉积出了均匀的金刚石膜。采用ＣＨ４／Ｃ２混合气体时，沉积速率在０．５～１．０μｍ／ｈ之间，这与原有的热灯丝方法相近。采用ＣＯ／Ｈ２混合气体时，沉积速率可达到１．７μｍ／ｈ。     

射频等离子体沉积非晶碳氢薄膜及其阻隔性能

采用射频辉光放电等离子体化学气相沉积系统,,以甲烷和氩气作为工作气体在PET(聚对苯二甲酸乙二醇酯)片和玻璃片基上沉积了非晶碳氢薄膜,利用傅立叶变换红外光谱(FTIR)对碳氢薄膜的结构进行研究,并且通过透水蒸汽相对比较实验检测了PET上沉积碳氢膜的阻隔性能,详细讨论了沉积工艺参数对碳氢薄膜结构和阻隔性能的影响.实验结果证明,沉积的薄膜越厚,碳氢膜的含量越高,阻隔性能越好,沉积碳氢膜的PET阻隔性比原始PET都有明显提高,当膜厚达900nm时,阻水蒸汽透过率可提高7倍.     

金刚石/碳化硅复合梯度膜制备研究

采用微波等离子化学气相沉积(MW-PCVD)制备金刚石/碳化硅复合梯度膜.工作气体为H₂,CH₄和Si[CH₃]₄(四甲基硅烷,TMS),其中H₂∶CH₄=100∶0.6,Si[CH₃]₄为0％-O.05％,沉积压力为3300Pa,基体温度为700℃,微波功率为700W.基体为单晶硅,在沉积前用纳米金刚石颗粒处理.沉积后的样品经扫描电子显微镜(SEM),电子探针显微分析(EPMA),X射线能量损失分析(EDX)表明:沉积膜中的碳化硅含量是随Si[CH₃]₄流量的变化而改变.通过改变Si[CH₃]₄的流量可以制备金刚石/碳化硅复合梯度膜,且梯度膜中金刚石与复合膜过渡自然平滑.     

射频—直流等离子体增强化学气相沉积设备的研制

综合利用射频和直流辉光放电的特点研制成功射频－直流等离子化学气相沉积设备。成功地用该设备制备出类金刚石薄膜。类金钢石薄膜的沉积速率随极板负偏压、气体工作压力的增加而增大。     

射频等离子体聚合类聚乙烯氧抗菌功能材料的研究

以乙二醇二甲基醚为单体,采用射频等离子体化学气相沉积的方法制备类聚乙烯氧(PEO-like)功能材料.通过傅里叶变换红外光谱(FTIR)、X射线光电子能谱(XPS)和接触角测量仪等对材料的化学成分及表面性能进行了测试,研究等离子体工艺参数对PE0-like薄膜化学成分的影响.材料生物测试的结果表明:制备的PEO-like薄膜能够较好地阻抗血小板的吸附.     

等离子体化学气相沉积法及其最新发展

本文将对等离子体的性质、等离子体对化学气相沉积的作用、ＰＣＶＤ反应器以及 新近发展起来的微波等离子体化学气相沉积法（ＭＰＣＶＤ）的特点和应用作一综述。期 望引起国内同行对这一崭新领域的关注，把我国ＰＣＶＤ特别是ＭＰＣＶＤ的研究工 作推向前进。     

微波等离子体化学气相沉积法生长取向性纳米氮化铝薄膜

采用微波等离子增强的化学气相沉积法，在Ｓｉ（１１１）衬底上生长了（００２）选优取向良好的Ａ１Ｎ纳米薄膜。研究沉积参数对膜的形貌、物相结构和生长速率的影响，发现在一定条件下，该沉积过程属于典型的输运控制过程，采用表面吸附生长模型讨论了膜的生长机制。     

Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Influence of the substrate temperature on material properties

Successful p-type doping of μc-SiC:H with Al introduced from trimethylaluminum has been already demonstrated. In this work we focus on the influence of substrate temperature (T_S = 300-390 °C) on the Al-doping. As T_S is reduced from 390 °C to 300 °C, the crystallinity decreases from 75% to 55% and the dark conductivity σ_D decreases first by about three orders of magnitude before increasing again at T_S = 300 °C. Both microstructure, as determined from Raman spectroscopy, and optical absorption are little affected by the change in T_S. Upon annealing at 450 °C in vacuum, σ_D increases typically by two orders of magnitude up to 10⁻⁴ S/cm, which is explained by dopant activation as a result of hydrogen desorption. It is concluded that a process temperature > 350 °C is needed to obtain effective Al-doping for p-type μc-SiC:H thin films.     

基底温度对四元叠层硒化法制备铜铟镓硒(CIGS)薄膜的影响

利用四元叠层硒化法制备了铜铟镓硒(缩写为CIGS)薄膜,重点分析了在叠层法制备CIGS薄膜过程中,基底温度对CIGS薄膜的晶体结构,表面形貌以及各种元素沿深度分布的影响.实验结果表明,在叠层法制备CIGS薄膜时,发现在550℃的基底温度时,不经过退火便可以生成CIGS晶体,表面Ga的含量处于比较合适的范围.而基底温度为500℃,450℃时,只能生成铜铟硒(CIS)晶体,Ga元素表面的含量较少,主要分布在薄膜底部.     

Oxidation Protective Multilayer CVD SiC Coatings Modified by a Graphitic B-C Interlayer for 3D C/SiC Composite

A layered graphitic CVD B-C coating was introduced between two CVD SiC coating layers. Microstructure and chemical characterization of the CVD B-C and the hybrid SiC/B-C/SiC multilayer coating was performed using SEM, EDS, XPS and XRD. Oxidation protection ability of the coating for the C/SiC composite was studied using a thermogravimetric analyzer (TGA) in the isothermal mode and by measuring residual flexural strength. The layered graphitic CVD B-C coating middle layer reduced the maximum crack width in the CVD SiC coating. The hybrid SiC/B-C/SiC multilayer coating provided a better oxidation protection for C/SiC composite than a three layer CVD SiC coating due to coating crack control and sealing effects at temperatures up to 1,300°C for 900 min.     

SiC纤维直流电阻加热CVD工艺研究

对SiC纤维的直流电阻加热CVD工艺进行了研究,实验采用将两种硅烷的比例混合液体通过液体流量计计量供液并即时完全汽化后与氢气混合输入到反应管并在水冷水银封入气口通入顶吹氢的供气方案,从而简化了工艺并解决了反应气体冷凝问题.在CVD工艺研究中发现影响纤维沉积质量的因素主要有沉积温度、反应气体组分及流量、走丝速度等工艺参数,此外还发现直流电阻加热CVD工艺中,反应管前后存在约200℃的温差,采用双沉积室工艺可减缓温差.在一定的沉积参数下,可沉积出直径60～100μm、抗拉强度3100～4080MPa的SiC纤维.     

Mechanical durability of ultra-water-repellent thin film by microwave plasma-enhanced CVD

Here we present the results of the mechanical properties of hard ultra-water-repellent film prepared by microwave plasma-enhanced CVD methods, using trimethylmethoxysilane (TMMOS) as a raw material and CO₂ as an additive gas, and following by a hydrophobicity treatment. This study was focused on the influence of partial pressure of TMMOS and total pressure on the mechanical properties. The results showed that lower partial pressure was responsible for better mechanical properties but for a worse water repellency. The total pressure has a less effect on the mechanical properties but a more significant effect on the water repellency. The mechanical durability was also evaluated for films prepared on the optimal conditions.     

化学气相沉积金刚石薄膜生长的原位反射率测量

报道了化学气相沉积金刚石薄膜生长的原位反射率测量,提出了监控金刚石薄膜生长的激光反射多光束干涉的数学模型。通过原位反射率的测量,精确监控了金刚石薄膜的生长厚度,成功地制备了红外增透增,这种方法的测量装置简单、紧凑而且可靠。     

低温制备Pb(Zr0.52Ti0.48)O3铁电薄膜及其性能研究

采用脉冲激光沉积技术（PLD）在（100）p-Si衬底上,低温淀积、快速退火成功地制备了具有完全钙钛矿结构的多晶PZT铁电薄膜,所制备的PZT铁电薄膜致密、均匀,表现出良好的介电和铁电性能,其介电常数和介电损耗100kHz下分别为320和0.08,剩余极化Pr和矫顽场Ec分别为14μC/cm^2和58kV/cm,＋5V电压下漏电流密度低于10^-7A/cm^2。10^7次极化反转后剩余极化仅下降10％,具有较好的疲劳特性。     

沉积参数对化学气相沉积纳米金刚石薄膜的影响

用强电流直流伸展电弧化学气相沉积金刚石薄膜装置,在CH4-Ar和CH4-H2-Ar气氛中沉积了纳米金刚石薄膜,研究了沉积气氛中H2加入量和沉积压力对金刚石薄膜显微组织和生长机制的影响.沉积气氛中H2含量对金刚石薄膜的表面形貌、晶粒尺寸和生长速度有显著影响,随着H2含量增加,金刚石晶粒尺寸增大,薄膜生长速度提高.在1%CH4-Ar气氛中沉积的纳米金刚石薄膜,晶粒尺寸细小,薄膜表面形貌光滑平整.在1%CH4-少量H2-Ar气氛中沉积的金刚石薄膜,晶粒尺寸小于100nm,薄膜表面形貌较平整.随着沉积压力提高,金刚石薄膜的生长速度增大.用激光Ram an对金刚石薄膜进行了表征.     

Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

An overview on microstructural and electronic properties of stoichiometric microcrystalline silicon carbide (μc-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low substrate temperatures will be given. The electronic properties are strongly dependent on crystalline phase, local bonding, strain, defects, impurities, etc. Therefore these quantities need to be carefully investigated in order to evaluate their influence and to develop strategies for material improvement. We will particularly address the validity of different experimental methods like Raman spectroscopy and IR spectroscopy to provide information on the crystalline volume fraction by comparing the results with Transmission Electron Microscopy (TEM) and X-Ray diffraction data. Finally the electronic properties as derived from optical absorption and transport measurements will be related to the microstructure.     

CVD法水蒸气条件下制备SiC块体

以三氯甲基硅烷（ＭＴＳ）为原料,在无水蒸气和有水蒸气加入的条件下采用化学气相沉积（ＣＶＤ）法制备出ＳiＣ块体材料,在９５０~1200℃的范围内,水蒸气水温２０~80℃时由Ａr鼓泡引入反应器中进行沉积,得到的产物基属β-SｉＣ,其中混有少量的二氧化硅。结果表明,无水蒸气时ＳiC的沉积速率随沉积速率湿度升高而略有升高,通过 入水蒸气后ＳiC的沉积速率有所提高,当水蒸气的引入温放为２０℃、沉积温度为１０５０℃时,沉积速率大达到０．９mm/h;随水蒸气引入量的增加,ＳiC的沉积速率呈降低趋势,同沉积反应的机理进行了初步分析。