一种基于单片机的函数信号发生器的设计与实现

函数信号发生器在社会各个领域都被普遍的运用,随着数字技术与集成电路的发展,数字函数信号发生器逐渐的取代了模拟函数信号发生器,成为主流的函数信号发生器。文章即探讨一种使用单片机来实现数字函数信号发生器的实现方法,基于单片机是一种被广泛接受的入门主控芯片,文章的讨论重点放在对函数信号发生器的控制实现上,包括幅度、频率、波形的选择设置方法,频率和幅度的实现算法。     

直接数字频率合成器的教学实验

本文介绍一个电子系统设计实验-直接数字频率合成（DDS）信号源的设计与实现。该信号源可输出一定频率范围的正弦波、方波和三角波信号，输出频率可通过键盘进行预置，输出信号的类型和频率由LED数码管显示。实验采用单片机完成波形的相位、幅度值计算，波形数据存储在RAM中；用CPLD进行相位累加，并提供与单片机和数码管、RAM及内部累加器的接口和控制，由RAM读出的波形数据通过DAC芯片转换为模拟量，最后经一个模拟滤波器，对输出波形进行平滑。     

一种正弦信号发生器的设计

设计一个以单片机和FPGA为核心,基于DDS AD9851的正弦信号发生器,能在100 Hz-15 MHz频率范围可调.通过AGC、幅度控制、调制电路、功率放大等模块实现AM、FM、ASK、FSK、PSK多种调制功能.同时FPGA实现直接频率合成技术,产生基波信号,控制AD9851产生载波信号.用户通过按键选择系统输出调制方式,操作简单.     

用AD7008构成可程控正弦波信号发生器

本文介绍一种以AD7008为核心的正弦波信号发生器。正弦信号的频率和幅度通过单片机来设定。AD7008的输出信号通过一个由MAX262构成的程控带通滤波器进行滤波处理．程控滤波器的中心频率f0和Q值由单片机根据正弦信号的频率来设定。DDS是近几年发展起来的新型频率合成技术，具有极为广阔的应用前景。     

基于FPGA和51单片机信号发生器设计与实现

为了降低传统函数信号发生器成本,改善函数信号发生器低频稳定性,本文结合FPGA和51单片机设计并实现了产生以0.596Hz频率精度各种函数信号。函数信号频率、波形、幅度由51单片机控制,并用LCD显示函数信号相关信息。本文设计的信号发生器易维护、可以软件升级,从而得到更高频率精度的函数信号满足不同场合设计的需要。     

基于DDS芯片AD9851的高压脉冲发生器设计

设计了一种基于DDS（直接数字频率合成）芯片AD9851的可调高压脉冲发生器，该发生器主要由脉冲形成控制部分、信号放大部分度隔离3部分组成。通过单片机、DDS芯片及控制电路可以产生脉宽可调的脉冲信号，通过电阻分压调节器、高压变压器等外围电路来实现幅度可调的高压脉冲，不仅提高了脉冲发生器工作的稳定性，而且能方便、实时地实现脉冲宽度与幅度的在线调节。     

基于CPLD的函数信号发生器设计

针对传统信号源精度低的特点,提出一种新的函数信号发生器设计方案.这里介绍的函数信号发生器由CPLD、单片机控制模块、键盘、LED显示、D/A转换模块组成.采用直接数字频率合成(DDFS)技术,用单片机控制CPLD的方法产生正弦波、方波、三角波和占空比可调的矩形波.该系统具有频率范围宽,步进小,幅度和频率的精度高等特点.     

多功能计数器

本文设计了一种以超低功耗单片机MSP430F149为控制器,以高速的FPGA实现等精度测量正弦信号的频率、周期和相位差的多功能计数器.在设计中依据等精度计数原理,应用单片机的数学运算和控制功能,利用f=1/T实现了频率和周期的统一处理;采用相位-时间转换方法,根据??=f f N=/0××360?完成了相位差测量.此外,利用外加模拟通道,实现了对正弦波小信号的预处理,使得该计数器能够在较宽的频率范围和幅度范围内进行测量.     

一种频率特性测试仪的实现

文章介绍了一种运用正交解调原理,实现频率特性测试仪的方法。以51单片机来控制AD9854,产生两路频率范围为1MHz~40MHz且频率可设置的信号,两路信号正交（相角差90度）。其中一路信号通过待测网络,分别与原来的正交信号相混频。经过低通滤波器,产生两路I和Q信号,经过AD采样,单片机设计算法进行计算,得到待测网络的幅度和相位相应的特性。并通过显示系统进行显示。     

基于FPGA的多路信号源设计与实现

某型号遥测数据采集器在实验和测试时,需要开发一种能够产生多种输入信号的信号源。由单片机作为控制核心,基于FPGA、利用直接频率合成技术产生8路正弦信号。信号源各路信号的频率和幅度均可调,通过键盘设置可以5Hz为一个步进设定各个正弦信号的频率,液晶显示器能够显示当前状态和各个信号的频率。此信号源能同时实现多路信号的输出,信号精度高,在其他测试实验中也具有良好的应用前景。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks