浅谈RSA在有线宽带网络管理维护中的应用

通过RSA双因素认证及与Cisco ACS集成实现有线宽带网络管理维护中的用户认证及授权记账的功能,提高了前端系统及CMTS等设备的安全性及安全等级,降低了安全风险,减少了故障隐患,为网络设备及系统的管理带来了方便性,为有线网络平台的业务发展提供了良好的技术支撑。     

光纤滤波器的原理、结构设计及其进展

介绍了光纤滤波器的原理、结构主要应用,提出了级联设计滤波器的概念.在总结典型级联式滤波器的基础上,详细分析了其结构设计及工作原理,评述了其优缺点.结合微结构光纤(MOF)及光栅的特殊性质,阐述了典型的微结构光纤滤波器的结构设计及工作原理,展爪了其典型应用.提出了级联微结构光纤及光栅设计滤波器方案,展望了光纤滤波器的发展,并指出了进一步拓展及应用的方向.     

铝合金表面激光熔覆的新进展

本文总结了铝合金表面激光熔覆的特点,阐明了激光熔覆的合金体系及工艺方法,分析了各种熔覆层及界面的组织特征及性能,提出了铝合金激光表面熔覆存在的主要问题及改进途径.     

网络时代图书馆管理模式探讨

论述了网络时代图书馆角色的定位及管理模式 ,分析了网络环境下对图书馆信息服务业的影响及制约图书馆网络化发展的不利因素 ,预测了未来图书馆的发展趋势 ,探讨了数字化图书馆的发展模式及功能     

综合业务接入平台的一种实现方法

为支持综合业务,研究了综合业务接入平台的技术体制,提出了基于ATM及STM技术实现的可行性及必要性内部信号结构采用ATM信元共享总线及ST-BUS双总线方式;介绍了实现该平台的硬件及软件组成,重点描述了用于该平台的路由协议及时钟方式。     

基于云计算的高校数据中心的设计

基于云计算的高校数据中心的构建,不仅推动了高校环境、资源及应用的数字化发展,在以往的高校中搭建了一个数字空间,同时还有效拓展了现代高校的时间及空间维度,使校园数据中心的运行效率得到极大提升。本文分析了云计算的概念及特点,并阐述了基于云计算的高校数据中心的优势及目标,最后,针对构建高校云计算数据中心提出几点建议及措施。     

雷达薄壁天线罩的密封及防护

探讨了雷达薄壁天线罩的密封及防护问题,介绍了天线罩材料的老化性能和常用密封胶的性能及特点,针对平面阵列中薄壁天线罩的特点进行了密封设计及密封胶的优选,确定了单组份聚氨酯密封胶胶层厚度与固化时间的关系,并通过专用底处理剂及含氟涂料的使用,提高了密封胶的粘接强度及天线罩的防老化性能.     

基于云计算的高校数据中心的设计

基于云计算的高校数据中心的构建,不仅推动了高校环境、资源及应用的数字化发展,在以往的高校中搭建了一个数字空间,同时还有效拓展了现代高校的时间及空间维度,使校园数据中心的运行效率得到极大提升。本文分析了云计算的概念及特点,并阐述了基于云计算的高校数据中心的优势及目标,最后,针对构建高校云计算数据中心提出几点建议及措施。     

大功率压电变压器特性及应用研究

本文从分析压电变压器的等效电路出发,介绍了压电变压器模型参数的理论依据及相互关系,对压电变压器的基本参数及特性曲线进行了详细测试及分析,并给出了基于压电变压器的LED驱动电路及驱动器。     

中国联通无线城市建设思路及优势分析

文章分析了无线城市的内外部环境,对无线城市的功能进行分析,并针对无线城市的建设路线及网络技术进行了阐述及对照,提出了无线城市的构成元素及结构,对其组成结构进行了说明。最后,结合中国联通的优质网络资源及中国联通的特点叙述了中国联通在无线城市建设运营方面的优势。     

铜布线工艺中阻挡层钽膜的研究

从钽膜质量的角度研究了用溅射方法在硅衬底上得到的 60 nm钽膜对铜硅互扩散的阻挡效果 ,钽膜的质量通过对硅衬底的表面处理以及钽膜的淀积速率来控制。研究发现 ,适当的硅衬底表面处理对钽膜是否能产生良好的防扩散能力起着关键的作用。本研究还得到了能有效阻挡铜硅接触的钽膜的淀积速率。     

钽薄膜淀积速率与阻挡效果的研究

在硅衬底上用不同淀积速率溅射得到了 60 nm厚钽薄膜作为铜布线工艺中的扩散阻挡层。样品在退火前后 ,用二次离子质谱仪 (SIMS)对钽膜的阻挡效果进行鉴定 ,原子力显微镜 (AFM)分析了钽薄膜的形貌结构。研究发现不同淀积速率制作的钽膜由于其结构的差异对铜硅互扩散有着不同的阻挡效果 ,并提出样品在退火时 ,薄膜晶粒的重结晶过程是导致阻挡层失效的重要因素之一     

ULSI铜布线阻挡层Ta CMP及抛光液的研究

ULSI多层铜互连线中,由于Cu与Ta的硬度不同带来抛光速率的差异,使得在CMP过程中各种缺陷如碟形坑缺陷、磨蚀缺陷极易发生。研究分析了H2O2、有机碱对Cu和Ta抛光速率的影响,并进行了不同抛光液配比的试验。实验证明,在温度为30℃、压力0.08 MPa,转速60 r/min、抛光液流量为160 mL/min、抛光液成份为V(H2O2)∶V(有机碱)∶V(活性剂)∶V(螯合剂)=5∶15∶15∶25时,抛光速率一致性较好,能够有效降低碟形坑的出现几率;Cu、Ta的抛光速率均为500 nm/min左右,实现了CMP的全局平坦化。     

Enhancing the reliability of n-p junction diodes using plasma treated tantalum barrier film

The properties of Ta barrier films treated with various plasma nitridations have been investigated by Cu/barrier/Si. An amorphous layer is formed on Ta barrier film after plasma treatments. The thickness of the amorphous layer is about 3 nm. Plasma treated Ta films possess better barrier performance than sputtered Ta and TaN films. It is attributed to the formation of a new amorphous layer on Ta surface after the plasma treatment. Cu/Ta(N,H)/Ta (10 nm)/Si remained stable after annealing at 750 °C. Ta(N,H)/Ta possesses the best thermal stability and excellent electrical properties. Cu/Ta/n⁺-p and Cu/Ta(N,O)/Ta/n⁺-p diodes resulted in large reverse-bias junction leakage current after annealing at 500 °C and 600 °C, respectively. On the other hand, Ta(N,H)/Ta and Ta(N)/Ta diffusion barriers improve the thermal stability of junction diodes to 650 °C. Ta(N,H)/Ta barrier film possesses lowest resistivity among Ta, Ta(N,O)/Ta, and Ta(N)/Ta films. Hydrogen plays an important role in enhancement of barrier properties. It is believed that hydrogen not only induces amorphization on Ta, but also eliminates the oxygen in the film. It is believed that the enhancement of ability against the copper diffusion is due to the combined effects of the hydrogen reaction and nitridation.     

低电阻率介质层制备低压驱动薄膜电致发光器件的研究

采用Ｔａ２Ｏ５／ＳｉＯ２，５ａ２Ｏ５／Ａｌ２Ｏ３复合介质制备出２低压驱动ＺｎＳ：Ｍｎ薄膜电致发光器件，它的阈值电压在４０Ｖ以下。当驱动电压国６０频率为５０Ｈｚ时，发光亮度在３００ｃｄ／ｍ＾２以上，发光层中平均电场强度为１０＾５Ｖ／ｃｍ数量级。这种器件具有其独特的亮主压特性、频率特性和电荷存储量－电压特性。     

SiO2/Ta界面反应及其对铜扩散的影响

利用磁控溅射方法在表面有SiO2层的Si基片上溅射Ta/NiFe薄膜,采用X射线光电子能谱(XPS)研究了SiO2/Ta界面以及Ta5Si3标准样品,并进行计算机谱图拟合分析.实验结果表明在制备态下在SiO2/Ta界面处发生了热力学上有利的化学反应:37Ta+15SiO2=5Ta5Si3+6Ta2O5,界面处形成更稳定的化合物新相Ta5Si3、Ta2O5.在采用Ta作阻挡层的ULSI铜互连结构中这些反应产物可能有利于对Cu扩散的阻挡.     

Study on ta diffusion barrier in Al/Si system

The property of Ta as a diffusion barrier is studied for Al/Ta/Si structure. Interfacial reactions of Al(180 nm)/Ta(130 nm)/Si and Al(180 nm)/Ta(24 nm)/Si, in the temperature range 450∼600°C for 30 min, have been investigated. In Al/Ta(130 nm)/Si system, which is Ta-excess case, Al₃Ta is formed at 500°C. At 575°C, TaSi₂ is formed at the interface of Ta Si. At 600°C, after Al₃Ta decomposes at the interface of Al₃Ta TaSi₂, free Ta is bonded to TaSi₂ with the supply of Si from Si substrate and free Al diffuses through TaSi₂, resulting in Al spiking. In Al/Ta(24 nm)/Si system, which is Al-excess case, Al₃Ta is formed at 500°C. At the same temperature of 500°C, after Al₃Ta decomposes at the interface of Al₃Ta/Si, free Ta reacts with Si to form TaSi₂ and free Al diffuses to Si substrate, resulting in Al spiking. The results of interfacial reactions can be understood from the calculated Al-Si-Ta ternary phase diagram. It can be concluded that the reaction at Al/Ta should be suppressed to improve the performance of Ta diffusion barrier in Al/Si system.     

Barrier and seed repair performance of thin RuTa films for Cu interconnects

Thin (<4 nm) Physical Vapor Deposited (PVD) Ru-10 at.% Ta films were evaluated as diffusion barriers and seed enhancement layers for Cu metallization in sub 25 nm trenches. The ratio of Ru/Ta on blanket wafers could be influenced by changing the process conditions. However, a difference in Ru/Ta ratio did not influence the thermal stability of the layers during High Temperature X-ray Diffraction (HT-XRD) measurements as all RuTa films exhibited good thermal properties since no Cu-silicide formation was observed for temperatures below 500 °C. The RuTa films also passed an 85 °C/85% relative humidity (RH) test of one week of storage in order to test the H₂O barrier integrity of the films. Furthermore no difference was found when testing the O₂ barrier integrity during 300 s anneals at various temperatures between 250 °C and 500 °C. Good Cu fill of 20 nm trenches (AR 4:1) patterned in oxide was achieved when combining the RuTa films with PVD Cu seed layers with thicknesses ranging from 7 to 20 nm and Cu plating. When compared to a Ta(N)/Ta barrier, relatively high electrical yields (60-80%) were obtained for structures with CDs <30 nm when combining RuTa films with PVD Cu seed layers as thin as 7 nm (on field), hence evidencing the seed enhancement ability of these layers.     

Interfacial reactions and phase equilibria in the Al-Cu/Ta systems

Thermal inkjet technology is in widespread use for color printers. In the roofshooter thermal inkjet printhead, tantalum is often used as the diffusion barrier between the gold and the conduction layers, Al, Cu, and Al-Cu. This study investigated the contact stabilities of Al/Ta, Cu/Ta, and Al-Cu/Ta systems using the reaction couple technique. The couples were annealed in a furnace at 600°C, 750°C, 900°C, 1000°C, and 1200°C for various lengths of time. One reaction layer, the Al₃Ta phase, was formed at the interface in the Al/Ta and Al-Cu/Ta couples heat treated at 750°C, 900°C, and 1000°C. No Cu is observed in the Al₃Ta phase even in the Al-Cu/Ta couples; however, the reaction couples with Al-Cu have slower reaction rates. For the Al/Ta reaction couples annealed at 600°C and Cu/Ta couples annealed at 750°C, 900°C, 1000°C, and 1200°C, no noticeable interfacial reaction was observed. It was concluded that the contacts were very stable and Ta was a very good barrier layer. In addition, phase equilibria studies of the Al-Ta system were carried out. The experimental results indicate that the Al₂Ta phase was not stable at 850°C and higher. A revised Al-Ta phase diagram was proposed in this study.     

Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

Passivated single damascene copper SiO₂ damascene lines were evaluated in combination with TiSiN and Ta(N)/Ta diffusion barriers. Leakage current, breakdown and time-dependent dielectric breakdown properties were investigated on a wafer level basis for temperatures ranging between room temperature and 150 °C. It is found that the leakage performance of the wafers with a TiSiN barrier is better at room temperature, but at 150 °C the performance levels out with Ta(N)/Ta. Time-dependent dielectric breakdown measurements at 150 °C show that the lifetime of the interconnect is higher with the selected Ta(N)/Ta barrier than for TiSiN.