长径比和偏径比对双S形二元喷管性能的影响

通过数值模拟研究了长径比(L/D)和偏径比(S/D)对双S形二元喷管性能的影响,基于轴对称喷管,建立了长径比分别为2、2.5、3和偏径比分别为0.493、0.523、0.553的双S形二元喷管。结果表明:长径比越大推力越大,偏径比越大推力越小;相比基准轴对称喷管,长径比分别为2、2.5、3的双S形二元喷管推力分别下降了6.31%、3.15%、1.24%,偏径比分别为0.493、0.523、0.553的双S形二元喷管推力分别下降了3.15%、3.66%、4.17%;所有双S形二元喷管红外辐射强度相对基准轴对称喷管均有明显下降,在喷管出口正后方降幅均达到97%以上,全方位角降幅最小值均在30%以上;所有双S形二元喷管红外辐射强度空间分布规律基本相似,幅值差异在15.8%之内。     

波瓣混合器对双S形二元排气系统红外特性的影响

为了研究波瓣混合器对排气系统红外特性的影响,设计了波瓣数分别为12、15、18的波瓣混合器双S形二元排气系统,通过数值计算研究了波瓣数对排气系统红外抑制效果的影响,并与相应的环形混合器双S形二元排气系统对比。研究结果表明,随着波瓣数的增加,排气系统的推力略微升高,最大差值在0.1%以内;波瓣数越少,排气系统内、外涵气流的热混合度越高,尾喷流的最高温度和红外辐射强度越低,波瓣数由18减少到12时,喷流辐射强度最大降低了18.1%;相比环形混合器双S形二元排气系统,在侧向和下方探测面上纯喷流辐射的90方位角,三种波瓣数的波瓣混合器双S形二元排气系统辐射强度分别降低了20.9%和26.9%以上。因此,为了得到更好的红外抑制效果,建议使用较少波瓣数的波瓣混合器。     

带全遮挡导流支板的二元排气系统与后体组合模型的流动传热与红外特性分析

为了降低末级涡轮对排气系统尾向红外辐射贡献,通过设计导流支板实现对末级涡轮的全遮挡,运用数值模拟的方法研究了三种排气系统（基准轴对称排气系统、二元排气系统和带全遮挡导流支板的二元排气系统）与飞机后体组合模型的流动传热与红外特性,揭示了三种组合模型尾向3~5 μm波段的红外辐射特性的一般规律。结果表明,二元排气系统与飞机后体组合模型和带全遮挡导流支板的二元排气系统与飞机后体组合模型在尾向的红外辐射强度,相对基准轴对称排气系统与飞机后体组合模型,均有所降低,在0°观测方向降幅分别为22.1%和46.9%。若全遮挡导流支板采用冷却技术,只要冷却效果达到0.282和0.482,组合模型的红外辐射强度在0°观测方向相比支板未冷却状态的降幅分别为20.4%和35.45%。     

尾锥冷却对轴对称分开排气系统红外辐射特征的影响

本文采用数值计算的方法研究涡扇发动机轴对称分开排气系统红外辐射特征,分析了轴对称分开排气系统在3~5?m波段积分辐射强度的空间分布以及各个固体部件红外辐射的贡献,并讨论了高温部件冷却对排气系统红外辐射特征的影响规律。结果表明:在0°方向上,尾锥的积分辐射强度为总积分辐射强度的65%;采用冷却空气对尾锥进行冷却,冷却空气量在0.02 kg/s~0.06kg/s范围内,尾锥平均温度降低12%~22%,可以降低排气系统红外辐射强度28.4%~41.8%。     

出口形式对双S 弯排气系统红外特性影响研究

以轴对称收扩喷管为基础,利用截面曲率控制的方法并结合流量匹配原则,设计生成了不同出口形状的双S弯喷管。采用CFD数值模拟技术获得了6种模型的流场特征及组分浓度分布,在此基础上利用逆向蒙特卡洛方法对其进行了红外辐射特征研究,先后对比了不同模型的后半球红外辐射强度空间分布、探测面辐射亮度分布以及后半球锁定距离空间分布。研究结果表明:双S弯喷管能够有效减缩目标红外信号,出口形状对排气系统红外辐射有一定影响,梯形出口模型的红外辐射强度明显低于矩形出口以及椭圆出口模型,相比基准模型至少使红外辐射峰值减缩70%;梯形下底角的减小,其红外辐射强度逐渐降低;在推力损失可接受范围内利用合适的梯形出口能进一步降低排气系统的红外辐射强度。     

涵道比对二元俯仰矢量排气系统红外特征影响的实验研究

通过改变外涵流量,实验研究了涵道比0.3和1时,相同结构的二元俯仰矢量排气系统几何偏转0?、10?、20?三种模型下壁面温度与红外辐射特征分布。结果表明:涵道比1相对涵道比0.3时,排气系统火焰稳定器下游壁面温度具有较大降幅,隔热屏、收敛段、侧壁、扩张段壁面温度分别降低170 K、317 K、227 K和153 K;涵道比0.3时,随着几何偏角增大,排气系统红外辐射强度增大,最大增幅70.2%;但涵道比1时,正好相反,随着几何偏角增大,排气系统红外辐射强度下降,最大降幅65%。涵道比增大,排气系统红外辐射特征下降,几何偏转0?、10?、20?时,正尾向分别降低33.3%、42.1%、60.9%。     

采用Ziegler-Nichols-PID算法的激光红外多通池压强控制系统研制

为了实现CO₂气体同位素的高性能检测,研制了高精度、高稳定性的激光红外多通池压强控制系统。硬件方面,采用压强传感器连接于多通池前、后端,检测多通池内部气压,主控制器通过PWM信号,调控多通池前、后端比例阀导通状态,从而实现压强的闭环控制。软件方面,采用Ziegier-Nichols工程整定方法,完成对 P 、 I 、 D 3个参数的确定。结果表明:多通池压强为60 Torr(1 Torr=133.322 Pa)时,控制精度为±0.04 Torr。试验中,利用研制的多通池压强控制系统对13CO₂、12CO₂气体分子在4.3 μm吸收光谱进行测量。随着气体压强从0.026~0.066 atm (1 atm= 101 325 Pa),13CO₂和12CO₂气体分子吸收光谱的峰值随着压强增大而增大,吸收光谱宽度也随着压强的增大而增大。同时,利用红外气体检测系统对CO₂同位素丰度进行长达2 h的测量。CO₂同位素丰度均值为?9.081‰,测量值在?8.351‰~?9.736‰之间波动,最大偏差值为0.73‰。可以证明:该系统为红外CO₂气体同位素的高性能检测提供可靠保障。     

面向5G微基站的双频双极化电磁偶极子天线设计

文中提出并设计了一款应用于5G微基站的双频双极化电磁偶极子天线,工作带宽完整覆盖了长期演进（long term evolution,LTE）技术的主要频段和5G的全部中频段.该天线首先采用正交放置的渐变式Γ形馈电线对两个交叉放置的电磁偶极子馈电实现双频双极化,随后通过在电偶极子上添加H形缝隙有效扩展了低频段的带宽,最后创新性地引进具有电容性质的圆形寄生贴片将高频频点降低.此外,利用一款添加金属围栏的反射板来改善天线增益和辐射方向图的稳定性.测试结果表明:该天线S_11,22 < -10 dB的阻抗带宽为58.2%（2.11~3.84 GHz）和8.9%（4.72~5.16 GHz）,端口隔离度（|S₁₂|）高于25 dB,双频段内的平均增益分别为8.7 dBi和7.2 dBi;天线E面的半功率波瓣宽度在整个工作频带内的变化为61°±6°,交叉极化比高于20 dB.仿真与测试结果达到了良好的一致性.该天线结构简单、性能优良,可以作为LTE/5G室内基站天线的良好的候选.     

红外双色三视场光学系统设计

从分析红外材料在双波段上的色散特性出发,设计了一款共光路红外中、长波三视场光学系统。系统采用二次成像方式,满足100%冷光阑效率,在两个波段内同时完成了系统各视场的像差校正。设计结果表明,系统在4~5?m中波红外波段及8~9?m长波红外波段焦距、视场及F数均保持一致,各视场光学传递函数在20 lp/mm时均接近衍射极限。     

红外双波段共光路环形孔径超薄成像系统设计

针对中长波红外双波段系统的元件数量多、结构复杂等问题,分析了环形孔径超薄成像系统的结构特点,给出了系统初始结构遮拦比的计算方法,并设计了一种适用于中长波红外双波段的共光路环形孔径超薄成像系统,焦距为50 mm、全视场为14°、F数为1。系统仅由单一光学元件构成,结构简单且光路紧凑,其轴向尺寸与焦距的比值为0.48。在空间频率20 lp/mm处,中波红外3~5 μm波段的全视场调制传递函数大于0.45,长波红外8~10 μm波段的全视场调制传递函数大于0.30,同时实现了?40~80 ℃温度范围内的红外双波段无热化。通过公差分析可知该系统具备可加工性,且基底材料为红外硫系玻璃,可以通过精密模压的方法进行批量化生产。该研究为低成本、小型化红外双波段系统的实现提供了新的思路。     

Channel coding and decoding in a relay system operated with physical-layer network coding

This paper investigates link-by-link channel-coded PNC (physical layer network coding), in which a critical process at the relay is to transform the superimposed channel-coded packets received from the two end nodes (plus noise), Y₃ = X₁+ X₂+W₃, to the network-coded combination of the source packets, S₁ oplus S₂. This is in contrast to the traditional multiple-access problem, in which the goal is to obtain both S₁ and S₂ explicitly at the relay node. Trying to obtain S₁ and S₂ explicitly is an overkill if we are only interested in S1oplusS₂. In this paper, we refer to the transformation Y₃ rarr S₁ oplus S₂ as the channel-decoding- network-coding process (CNC) in that it involves both channel decoding and network coding operations. This paper shows that if we adopt the repeat accumulate (RA) channel code at the two end nodes, then there is a compatible decoder at the relay that can perform the transformation Y₃ rarr S₁oplusS₂ efficiently. Specifically, we redesign the belief propagation decoding algorithm of the RA code for traditional point-to-point channel to suit the need of the PNC multiple-access channel. Simulation results show that our new scheme outperforms the previously proposed schemes significantly in terms of BER without added complexity.     

低发射率材料涂敷区域对排气系统壁温和红外特性的影响

为了研究红外低发射率材料涂敷区域对排气系统壁温和红外特性的影响,在相同实验工况下,实验测量了3种涂敷方案:(1）仅中心锥涂敷;（2）仅混合器内表面涂敷;（3）中心锥与混合器内表面同时涂敷。下轴对称和S弯二元排气系统壁温和红外辐射特性。结果表明:涂敷低发射率材料将导致表面温度升高,同时也影响排气系统非涂敷区域的壁面温度分布。高温部件涂敷低发射率材料时,在涂敷区域可被直接探测的角域内,可有效抑制排气系统的红外辐射,但在涂敷区域不能被直接探测的角域内其影响规律因涂敷方案而变,在3种涂敷方案中,S弯二元排气系统仅涂敷混合器内表面,轴对称排气系统中心锥和混合器内表面同时涂敷低发射率材料时整体红外抑制效果最好。     

Duality between channel capacity and rate distortion with two-sidedstate information

We show that the duality between channel capacity and data compression is retained when state information is available to the sender, to the receiver, to both, or to neither. We present a unified theory for eight special cases of channel capacity and rate distortion with state information, which also extends existing results to arbitrary pairs of independent and identically distributed (i.i.d.) correlated state information (S₁, S₂) available at the sender and at the receiver, respectively. In particular, the resulting general formula for channel capacity C = max_p(u,x|s₁) [I(U; S₂, Y) I(U; S₁)] assumes the same form as the generalized Wyner-Ziv (1976) rate distortion function R(D) = min_p(u|x, s₁)p(x&capped;|u, s₂) [I(U; S ₁, X) 1(U; S₂)]     

Silicon Schottky barriers and p-n junctions with highly stablealuminum contact metallization

Reactively sputtered amorphous Ta₃₆Si₁₄N₅₀ thin films are investigated as diffusion barriers to improve the thermal stability of contacts to electronic devices, specifically between Al overlayers and Si substrates. Electrical measurements on Schottky diodes and on shallow n ⁺-p junction diodes are used to evaluate the thermal stability of the (Si)/W₄₈Si₂₀N₃₂/Ta₃₆Si ₁₄N₅₀/Al metallization. The W₄₈Si₂₀N₃₂ contacting layer is added to raise the Schottky barrier height on n-type Si. It is shown that a 100-nm-thick Ta₃₆Si₁₄N₅₀ layer effectively prevents the intermixing between Al and Si. With this barrier layer, both shallow junctions and Schottky diodes are electrically stable up to 700°C for 20 min (above the Al melting point of 660°C ), which makes this material the best thin-film diffusion barrier on record     

Channel combining and splitting for cutoff rate improvement

The cutoff rate R₀(W) of a discrete memoryless channel (DMC) W is often used as a figure of merit alongside the channel capacity C(W). If a channel W is split into two possibly correlated subchannels W₁, W₂, the capacity function always satisfies C(W₁)+C(W₂)lesC(W), while there are examples for which R₀(W₁)+R₀(W₂ )>R₀(W). The fact that cutoff rate can be "created" by channel splitting was noticed by Massey in his study of an optical modulation system. This paper gives a general framework for achieving similar gains in the cutoff rate of arbitrary DMCs by methods of channel combining and splitting. The emphasis is on simple schemes that can be implemented in practice. We give several examples that achieve significant gains in cutoff rate at little extra system complexity. Theoretically, as the complexity grows without bound, the proposed framework is capable of boosting the cutoff rate of a channel to arbitrarily close to its capacity in a sense made precise in the paper. Apart from Massey's work, the methods studied here have elements in common with Forney's concatenated coding idea, a method by Pinsker for cutoff rate improvement, and certain coded-modulation techniques, namely, Ungerboeck's set-partitioning idea and Imai-Hirakawa multilevel coding; these connections are discussed in the paper     

0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delay

A 21-27 GHz CMOS ultra-wideband low-noise amplifier (UWB LNA) with state-of-the-art phase linearity property (group delay variation is only ± 8.1 ps across the whole band) is reported for the first time. To achieve high and flat gain (S₂₁) and small group delay variation at the same time, the inductive series peaking technique was adopted in the output of each stage for bandwidth enhancement. The LNA dissipated 27 mW power and achieved input return loss (S₁₁) of 213 to 220.1 dB, output return loss (S₂₂) of 28.2 to 230.2 dB, flat S21 of 9.3 ± 1.3 dB, reverse isolation (S₁₂) of 252.7 to 273.3 dB, and noise figure of 4.9?6.1 dB over the 21-27 GHz band of interest. The measured 1 dB compression point (P_1dB) and input third-order intermodulation point (IIP3) were 214 and 24 dBm, respectively, at 24 GHz.     

Invariance of S21/S12 and K-factor underparallel operation of linear two-port devices

Based on a generalized circuit model for parallel-operated amplifiers with linear two-port devices, it has been proved that the S-parameter ratio S₂₁/S₁₂ and hence MSG (maximum stable gain) are invariant as long as the devices have an identical value of S₂₁/S₁₂ and the input and output networks are reciprocal. The invariance of K factor has been shown to hold for two cases: (i) devices are identical and input/output networks are lossless and symmetric with respect to each device, and (ii) identical admittances are added to the networks of case (i) so as to connect every device port with each other. Thus at least in these two cases, MAG (maximum available gain) and U (unilateral gain) are invariant as well as MSG under parallel operation of linear two-port devices. The invariance of S₂₁/S₁₂ and hence MSG applies to a variety of parallel-operated amplifiers such as distributed amplifiers and linear power amplifiers     

A Ka-Band CMOS Wilkinson Power Divider Using Synthetic Quasi-TEM Transmission Lines

This work presents a Ka-band two-way 3 dB Wilkinson power divider using synthetic quasi-transverse electromagnetic (TEM) transmission lines (TLs). The synthetic quasi-TEM TL, also called complementary-conducting-strip TL (CCS TL), is theoretically analyzed. The equivalent TL model, whose production is based on the extracted results, is applied to the power divider design. The prototype is fabricated by the standard 0.18 mum 1P6M CMOS technology, showing the circuit size of 210.0 mumtimes390.0 mum without contact pads. The measurement results, which match the 50 Omega system, reveal perfect agreements with those of the simulations. The comparison reveals the following characteristics. The divider exhibits an equal power-split with the insertion losses (S₂₁ and S₃₁) of 3.65 dB. The return losses (S₁₁, S₂₂ and S₃₃) of the prototype are higher than 10.0 dB from 30.0 to 40.0 GHz.     

A 60-dB gain, 55-dB dynamic range, 10-Gb/s broad-band SiGe HBTlimiting amplifier

A limiting amplifier IC implemented in a silicon-germanium (SiGe) heterojunction bipolar transistor technology for low-cost 10-Gb/s applications is described. The IC employs 20 dB gain limiting cells, input overload protection, split analog-digital grounds, and on-chip isolation interface with transmission lines. A gain enhancement technique has been developed for a parallel-feedback limiting cell. The limiting amplifier sensitivity is less than 3.5 mV_pp at BER=10^-9 with 2-V_pp maximum input (55-dB dynamic range). The total gain is over 60 dB, and S₂₁ bandwidth exceeds 15 GHz at 10-mV_pp input. Parameters S₁₁ and S₂₂ are better than -10 dB in the 10-GHz frequency range. The AM to PM conversion is less than 5 ps across input dynamic range. The output differential voltage can be set from 0.2 to 2 V_pp with IC power dissipation from 250 mW to 1.1 W. The chip area is 1.2×2.6 mm². A 10-Gb/s optical receiver, built with the packaged limiting amplifier, demonstrated -19.6-dBm sensitivity. The IC can be used in 10-Gb/s fiber-optic receivers requiring high sensitivity and wide input dynamic range     

基于耦合腔的太赫兹垂直传输结构

提出了一种工作在110 GHz的耦合腔垂直传输结构。在垂直金属腔的两端对称地装配两个模式变换单元,作为波导的两个激励端口。模式变换单元在50 μm厚度石英基片上实现,该基片采用通孔结构和双面镀金工艺。因此,该垂直传输结构在太赫兹频段具有较低的插入损耗。仿真结果与测试结果拟合良好,模式变换单元的 S₂₁仿真结果为?0.7 dB,测试结果小于?1.3 dB,在105~116 GHz带宽的反射系数低于?10 dB。