Anisotropic Structure and Charge Transport in Highly Strain‐Aligned Regioregular Poly(3‐hexylthiophene)

A novel method of strain‐aligning polymer films is introduced and applied to regioregular poly(3‐hexylthiophene) (P3HT), showing several important features of charge transport. The polymer backbone is shown to align in the direction of applied strain resulting in a large charge‐mobility anisotropy, where the in‐plane mobility increases in the applied strain direction and decreases in the perpendicular direction. In the aligned film, the hole mobility is successfully represented by a two‐dimensional tensor, suggesting that charge transport parallel to the polymer backbone within a P3HT crystal is strongly favored over the other crystallographic directions. Hole mobility parallel to the backbone is shown to be high for a mixture of plane‐on and edge‐on packing configurations, as the strain alignment is found to induce a significant face‐on orientation of the originally highly edge‐on oriented crystalline regions of the film. This alignment approach can achieve an optical dichroic ratio of 4.8 and a charge‐mobility anisotropy of 9, providing a simple and effective method to investigate charge‐transport mechanisms in polymer semiconductors.     

Aligned Polythiophene and its Blend Film by Direct‐Writing for Anisotropic Charge Transport

A combination of patterning and film alignment techniques helps to build multi‐order polymer architecture for application in flexible electronics. A direct‐writing method is employed using microcapillary arrays to prepare semiconducting polymer films with both optical and electrical anisotropy. Not only aligned poly(3‐butylthiophene) (P3BT) nanowires in neat P3BT films, but also aligned P3BT nanowires within a polystyrene (PS) matrix are obtained, which yields an aligned semiconductor/insulator polymer blend with anisotropic charge transport. The field‐effect transistor (FET) mobilities/threshold voltages from both vertical and parallel to alignment directions as well as their dependence on blending ratio are studied. The increased mobility of P3BT/PS blends, as compared with neat P3BT, is observed in both vertical and parallel directions. Using this alignment method, FET mobility and threshold voltage of the semiconductor/insulator polymer blends are comprehensively tuned, from which a digital inverter with gain up to 80 is realized. Therefore, this work not only helps understanding the charge transport mechanism in semiconducting/insulating polymer blends, but also provides an effective approach towards high‐performance field‐effect transistors with tunable mobility and threshold voltage.     

Anisotropy of Charge Transport in a Uniaxially Aligned and Chain‐Extended,High‐Mobility,Conjugated Polymer Semiconductor

Charge transport in the ribbon phase of poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT)—one of the most highly ordered, chain‐extended crystalline microstructures available in a conjugated polymer semiconductor—is studied. Ribbon‐phase PBTTT has previously been found not to exhibit high carrier mobilities, but it is shown here that field‐effect mobilities depend strongly on the device architecture and active interface. When devices are constructed such that the ribbon‐phase films are in contact with either a polymer gate dielectric or an SiO₂ gate dielectric modified by a hydrophobic, self‐assembled monolayer, high mobilities of up to 0.4 cm² V^?1 s^?1 can be achieved, which is comparable to those observed previously in terrace‐phase PBTTT. In uniaxially aligned, zone‐cast films of ribbon‐phase PBTTT the mobility anisotropy is measured for transport both parallel and perpendicular to the polymer chain direction. The mobility anisotropy is relatively small, with the mobility along the polymer chain direction being higher by a factor of 3–5, consistent with the grain size encountered in the two transport directions.     

Mechanism of Crystallization and Implications for Charge Transport in Poly(3‐ethylhexylthiophene) Thin Films

In this work, crystallization kinetics and aggregate growth of poly(3‐ethylhexylthiophene) (P3EHT) thin films are studied as a function of film thickness. X‐ray diffraction and optical absorption show that individual aggregates and crystallites grow anisotropically and mostly along only two packing directions: the alkyl stacking and the polymer chain backbone direction. Further, it is also determined that crystallization kinetics is limited by the reorganization of polymer chains and depends strongly on the film thickness and average molecular weight. Time‐dependent, field‐effect hole mobilities in thin films reveal a percolation threshold for both low and high molecular weight P3EHT. Structural analysis reveals that charge percolation requires bridged aggregates separated by a distance of ≈2–3 nm, which is on the order of the polymer persistence length. These results thus highlight the importance of tie molecules and inter‐aggregate distance in supporting charge percolation in semiconducting polymer thin films. The study as a whole also demonstrates that P3EHT is an ideal model system for polythiophenes and should prove to be useful for future investigations into crystallization kinetics.     

Quantifying the Energy Barriers and Elucidating the Charge Transport Mechanisms across Interspherulite Boundaries in Solution‐Processed Organic Semiconductor Thin Films

Grain boundaries act as bottlenecks to charge transport in devices comprising polycrystalline organic active layers. To improve device performance, the nature and resulting impact of these boundaries must be better understood. The densities and energy levels of shallow traps within and across triethylsilylethynyl anthradithiophene (TES ADT) spherulites are quantified. The trap density is 7 × 10¹⁰ cm^?2 in devices whose channels reside within a single spherulite and up to 3 × 10¹¹ cm^?2 for devices whose channels span a spherulite boundary. The activation energy for charge transport, E_A, increases from 34 meV within a spherulite to 50–66 meV across a boundary, depending on the angle of molecular mismatch. Despite being molecular in nature, these E_A’s are more akin to those found for charge transport in polymer semiconductors. Presumably, trapped TES ADT at the boundary can electrically connect neighboring spherulites, similar to polymer chains connecting crystallites in polymer semiconductor thin films.     

Temperature‐Resolved Local and Macroscopic Charge Carrier Transport in Thin P3HT Layers

Previous investigations of the field‐effect mobility in poly(3‐hexylthiophene) (P3HT) layers revealed a strong dependence on molecular weight (MW), which was shown to be closely related to layer morphology. Here, charge carrier mobilities of two P3HT MW fractions (medium‐MW: M_n = 7 200 g mol^?1; high‐MW: M_n = 27 000 g mol^?1) are probed as a function of temperature at a local and a macroscopic length scale, using pulse‐radiolysis time‐resolved microwave conductivity (PR‐TRMC) and organic field‐effect transistor measurements, respectively. In contrast to the macroscopic transport properties, the local intra‐grain mobility depends only weakly on MW (being in the order of 10^?2 cm² V^?1 s^?1) and being thermally activated below the melting temperature for both fractions. The striking differences of charge transport at both length scales are related to the heterogeneity of the layer morphology. The quantitative analysis of temperature‐dependent UV/Vis absorption spectra according to a model of F. C. Spano reveals that a substantial amount of disordered material is present in these P3HT layers. Moreover, the analysis predicts that aggregates in medium‐MW P3HT undergo a “pre‐melting” significantly below the actual melting temperature. The results suggest that macroscopic charge transport in samples of short‐chain P3HT is strongly inhibited by the presence of disordered domains, while in high‐MW P3HT the low‐mobility disordered zones are bridged via inter‐crystalline molecular connections.     

Coulomb Enhanced Charge Transport in Semicrystalline Polymer Semiconductors

Polymer semiconductors provide unique possibilities and flexibility in tailoring their optoelectronic properties to match specific application demands. The recent development of semicrystalline polymers with strongly improved charge transport properties forces a review of the current understanding of the charge transport mechanisms and how they relate to the polymer's chemical and structural properties. Here, the charge density dependence of field effect mobility in semicrystalline polymer semiconductors is studied. A simultaneous increase in mobility and its charge density dependence, directly correlated to the increase in average crystallite size of the polymer film, is observed. Further evidence from charge accumulation spectroscopy shows that charges accumulate in the crystalline regions of the polymer film and that the increase in crystallite size affects the average electronic orbitals delocalization. These results clearly point to an effect that is not caused by energetic disorder. It is instead shown that the inclusion of short range coulomb repulsion between charge carriers on nanoscale crystalline domains allows describing the observed mobility dependence in agreement with the structural and optical characterization. The conclusions that are extracted extend beyond pure transistor characterization and can provide new insights into charge carrier transport for regimes and timescales that are relevant to other optoelectronic devices.     

Enhancing the Charge Transport in Solution‐Processed Perylene Di‐imide Transistors via Thermal Annealing of Metastable Disordered Films

The introduction of side chains in π‐conjugated molecules is a design strategy widely exploited to increase molecular solubility thus improving the processability, while directly influencing the self‐assembly and consequently the electrical properties of thin films. Here, a multiscale structural analysis performed by X‐ray diffraction, X‐ray reflectivity, and atomic force microscopy on thin films of dicyanoperylene molecules decorated with either linear or branched side chains is reported. The substitution with asymmetric branched alkyl chains allows obtaining, upon thermal annealing, field‐effect transistors with enhanced transport properties with respect to linear alkyl chains. Branched chains induce molecular disorder during the film growth from solution, effectively favouring 2D morphology. Post‐deposition thermal annealing leads to a structural transition towards the bulk‐phase for molecules with branched chains, still preserving the 2D morphology and allowing efficient charge transport between crystalline domains. Conversely, molecules with linear chains self‐assemble into 3D islands exhibiting the bulk‐phase structure. Upon thermal annealing, these 3D islands keep their size constant and no major changes are observed in the organic field effect transistor characteristics. These findings demonstrate that the disorder generated by the asymmetric branched chains when the molecule is physisorbed in thin film can be instrumental for enhancing charge transport via thermal annealing.     

Effects of Confinement on Microstructure and Charge Transport in High Performance Semicrystalline Polymer Semiconductors

The film thickness of one of the most crystalline and highest performing polymer semiconductors, poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT), is varied in order to determine the effects of interfaces and confinement on the microstructure and performance in organic field effect transistors (OFETs). Crystalline texture and overall film crystallinity are found to depend strongly on film thickness and thermal processing. The angular distribution of crystallites narrows upon both a decrease in film thickness and thermal annealing. These changes in the film microstructure are paired with thin‐film transistor characterization and shown to be directly correlated with variations in charge carrier mobility. Charge transport is shown to be governed by film crystallinity in films below 20 nm and by crystalline orientation for thicker films. An optimal thickness is found for PBTTT at which the mobility is maximized in unannealed films and where mobility reaches a plateau at its highest value for annealed films.     

Photoinduced Anisotropic Supramolecular Assembly and Enhanced Charge Transport of Poly(3‐hexylthiophene) Thin Films

The self‐organization of organic polymer semiconductors into ordered supramolecular assemblies commensurate with efficient charge transport is achieved by tuning a range of process parameters (e.g., film deposition method (spin vs drop cast), solvent boiling point (low vs high boiling point), polymer‐dielectric interface treatment, and post‐deposition processing (solvent vapor or thermal annealing)). However, these strategies present limitations for large‐scale high‐throughput processing due to associated pre‐ and/or post semiconductor deposition steps. Here, photoinduced anisotropic supramolecular assembly of P3HT chains in solution is demonstrated. UV irradiation provides for enhanced intramolecular ordering of solubilized polymer chains, and thereby effects formation of anisotropic supramolecular polymer assemblies via favorable π–π stacking (intermolecular interaction). Molecular ordering is thus dramatically enhanced with concomitant, enhanced charge transport characteristics of corresponding films. Additional pre‐ and/or post treatments are avoided.     

Effect of Spacer Length of Siloxane‐Terminated Side Chains on Charge Transport in Isoindigo‐Based Polymer Semiconductor Thin Films

A series of isoindigo‐based conjugated polymers (PII2F‐C_mSi, m = 3–11) with alkyl siloxane‐terminated side chains are prepared, in which the branching point is systematically “moved away” from the conjugated backbone by one carbon atom. To investigate the structure–property relationship, the polymer thin film is subsequently tested in top‐contact field‐effect transistors, and further characterized by both grazing incidence X‐ray diffraction and atomic force microscopy. Hole mobilities over 1 cm² V^?1 s^?1 is exhibited for all soluble PII2F‐C_mSi (m = 5–11) polymers, which is 10 times higher than the reference polymer with same polymer backbone. PII2F‐C₉Si shows the highest mobility of 4.8 cm² V^?1 s^?1, even though PII2F‐C₁₁Si exhibits the smallest π–π stacking distance at 3.379 Å. In specific, when the branching point is at, or beyond, the third carbon atoms, the contribution to charge transport arising from π–π stacking distance shortening becomes less significant. Other factors, such as thin‐film microstructure, crystallinity, domain size, become more important in affecting the resulting device's charge transport.     

Band-Like Charge Transport in Phytic Acid-Doped Polyaniline Thin Films

We explore the charge transport properties of phytic acid (PA) doped polyaniline thin films prepared by the surfactant monolayer-assisted interfacial synthesis (SMAIS). Structural and elemental analysis confirms the inclusion of PA in the thin films and reveals a progressive loss of crystallinity with the increase of PA doping content. Charge transport properties are interrogated by time-resolved terahertz (THz) spectroscopy. Notably, independently of doping content and hence crystallinity, the frequency-resolved complex conductivity spectra in the THz region can be properly described by the Drude model, demonstrating band-like charge transport in the samples and state-of-the-art charge carrier mobilities of ≈1 cm²V⁻¹s⁻¹. A temperature-dependent analysis for the conductivity further supports band-like charge transport and suggest that charge carrier mobility is primarily limited by impurity scattering. This work highlights the potential of PA doped polyaniline for organic electronics.     

A Versatile Method to Fabricate Highly In‐Plane Aligned Conducting Polymer Films with Anisotropic Charge Transport and Thermoelectric Properties: The Key Role of Alkyl Side Chain Layers on the Doping Mechanism

A general method is proposed to produce oriented and highly crystalline conducting polymer layers. It combines the controlled orientation/crystallization of polymer films by high‐temperature rubbing with a soft‐doping method based on spin‐coating a solution of dopants in an orthogonal solvent. Doping rubbed films of regioregular poly(3‐alkylthiophene)s and poly(2,5‐bis(3‐dodecylthiophen‐2‐yl)thieno[3,2‐b ]thiophene) with 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F₄TCNQ) yields highly oriented conducting polymer films that display polarized UV–visible–near‐infrared (NIR) absorption, anisotropy in charge transport, and thermoelectric properties. Transmission electron microscopy and polarized UV–vis–NIR spectroscopy help understand and clarify the structure of the films and the doping mechanism. F₄TCNQ^? anions are incorporated into the layers of side chains and orient with their long molecular axis perpendicular to the polymer chains. The ordering of dopant molecules depends closely on the length and packing of the alkyl side chains. Increasing the dopant concentration results in a continuous variation of unit cell parameters of the doped phase. The high orientation results in anisotropic charge conductivity (σ) and thermoelectric properties that are both enhanced in the direction of the polymer chains (σ = 22 ± 5 S cm^?1 and S = 60 ± 2 µV K^?1). The method of fabrication of such highly oriented conducting polymer films is versatile and is applicable to a large palette of semiconducting polymers.     

Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n‐channel Polymer Semiconductor

Charge transport is investigated in high‐mobility n‐channel organic field‐effect transistors (OFETs) based on poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2), Polyera ActivInk? N2200) with variable‐temperature electrical measurements and charge‐modulation spectroscopy. Results indicate an unusually uniform energetic landscape of sites for charge‐carrier transport along the channel of the transistor as the main reason for the observed high‐electron mobility. Consistent with a lateral field‐independent transport at temperatures down to 10 K, the reorganization energy is proposed to play an important role in determining the activation energy for the mobility. Quantum chemical calculations, which show an efficient electronic coupling between adjacent units and a reorganization energy of a few hundred meV, are consistent with these findings.     

Highly Efficient Charge Transport in a Quasi‐Monolayer Semiconductor on Pure Polymer Dielectric

The study of monolayer organic field‐effect transistors (MOFETs) provides an effective way to investigate the intrinsic charge transport of semiconductors. To date, the research based on organic monolayers on polymeric dielectrics lays far behind that on inorganic dielectrics and the realization of a bulk‐like carrier mobility on pure polymer dielectrics is still a formidable challenge for MOFETs. Herein, a quasi‐monolayer coverage of pentacene film with orthorhombic phase is grown on the poly (amic acid) (PAA) dielectric layer. More significantly, charge density redistribution occurs at the interface between the pentacene and PAA caused by electron transfer from pentacene to the PAA dielectric layer, which is verified by theoretical simulations and experiments. As a consequence, an enhanced hole accumulation layer is formed and pentacene‐based MOFETs on pure polymer dielectrics exhibit bulk‐like carrier mobilities of up to 13.7 cm² V^?1 s^?1 from the saturation region at low V_GS, 9.1 cm² V^?1 s^?1 at high V_GS and 7.6 cm² V^?1 s^?1 from the linear region, which presents one of the best results of previously reported MOFETs so far and indicates that the monolayer semiconductor growing on pure polymer dielectric could produce highly efficient charge transport.     

Aligned Thin Films of Discotic Hexabenzocoronenes: Anisotropy in the Optical and Charge Transport Properties

The anisotropy in the optical absorption and photoconductivity of thin layers of mesomorphic derivatives of hexa‐peri‐hexabenzocoronene (HBC) have been investigated for aligned films prepared via three different methods: deposition on friction‐deposited polytetrafluoroethylene (PTFE), zone‐casting (ZC), and Langmuir–Blodgett (LB) multilayer dipping. The ratio of the optical density for light polarized perpendicular to the alignment direction, OD₊, to that for light polarized parallel, OD₌, varies from close to 1.0 up to 12.5 depending on whether the HBC cores are tilted at close to 45° or 90° with respect to the axis of the self‐assembled columnar stacks. For all aligned films the photoconductivity, determined using the electrode‐less flash‐photolysis time‐resolved microwave conductivity technique (FP‐TRMC), was found to be favored in the direction of columnar alignment by up to a factor of 30 for a PTFE‐aligned film. The effect of varying the temperature of the films over a range encompassing the temperature at which the transition from the crystalline solid to the columnar mesophase occurs in the bulk materials has been investigated. High‐temperature annealing increases the optical and conductivity anisotropy for the LB film significantly, but has little effect for the PTFE and the ZC films. The relative efficacy of the different alignment procedures is discussed.     

Synthesis,Electronic Structure,and Charge Transport Characteristics of Naphthalenediimide‐Based Co‐Polymers with Different Oligothiophene Donor Units

Naphthalenediimide (NDI)‐based polymers co‐polymerized with thienyl units are an interesting class of polymer semiconductors because of their good electron mobilities and unique film microstructure. Despite these properties, understanding how the extension of the thienyl co‐monomer affects charge transport properties remains unclear. With this goal in mind, we have synthesized a series of NDI derivatives of the parent poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene) (P(NDI2OD‐T2)), which exhibited excellent electron mobility. The strategy comprises both the extension of the donor o‐conjugation length and the heteroatomic fusion of the thiophene rings. These newly synthesized compounds are characterized experimentally and theoretically vis‐à‐vis with P(NDI2OD‐T2) as the reference. UV‐vis data and cyclic‐voltammetry are adopted to assess the effect of the donor modification on the frontier energy levels and on the bandgap. Intra‐molecular polaronic effects are accounted for by computing the internal reorganization energy with density functional theory (DFT) calculations. Finally electrons and holes transport is experimentally investigated in field‐effect transistors (FETs), by measuring current‐voltage characteristics at variable temperatures. Overall we have identified a regime where inter‐molecular effects, such as the wavefunction overlap and the degree of energetic disorder, induced by the different donor group prevail over polaronic effects and are the leading factors in determining electrons mobility.     

Following Chemical Charge Trapping in Pentacene Thin Films by Selective Impurity Doping and Wavelength‐Resolved Electric Force Microscopy

Charge trapping is one of several factors that limit the performance of organic electronic materials, yet even in pentacene, a prototypical small‐molecule semiconductor, the precise chemical nature of charge trapping remains poorly understood. Here the effects of three chemical trap‐precursor candidates are examined by layering thin‐film pentacene transistors with different pentacene defect species. The resulting charge trapping is studied in each device via scanning‐probe electric force microscopy coupled with variable‐wavelength sample illumination. Firstly, it is found that layering with pentacen‐6(13H)‐one (PHO) readily produces uniform charge trapping everywhere in the transistor channel, as expected for an active blanket‐deposited trap‐precursor. However, layering with 6,13‐dihydropentacene (DHP) produces fewer, more‐isolated traps, closely resembling the surface potential distribution in pristine pentacene thin films. Secondly, the rates of trap‐clearing versus illuminating wavelength (trap‐clearing spectra) are measured, revealing enhanced trap‐clearing rates at wavelengths assigned to the absorption of either pentacene or the charged trap species. The trap‐clearing spectrum for the PHO‐layered sample closely resembles the spectrum obtained from pentacene aged in a working transistor, while the trap‐clearing spectrum for the DHP‐layered sample resembles the spectrum observed in pristine pentacene. We conclude that PHO competently creates traps in pentacene that match the expected trap‐clearing spectrum for degraded pentacene, while DHP does not, and that the chemical trap species in aged pentacene is very likely PHO⁺.     

Enhanced Vertical Charge Transport in a Semiconducting P3HT Thin Film on Single Layer Graphene

The crystallization and electrical characterization of the semiconducting polymer poly(3‐hexylthiophene) (P3HT) on a single layer graphene sheet is reported. Grazing incidence X‐ray diffraction revealed that P3HT crystallizes with a mixture of face‐on and edge‐on lamellar orientations on graphene compared to mainly edge‐on on a silicon substrate. Moreover, whereas ultrathin (10 nm) P3HT films form well oriented face‐on and edge‐on lamellae, thicker (50 nm) films form a mosaic of lamellae oriented at different angles from the graphene substrate. This mosaic of crystallites with π–π stacking oriented homogeneously at various angles inside the film favors the creation of a continuous pathway of interconnected crystallites, and results in a strong enhancement in vertical charge transport and charge carrier mobility in the thicker P3HT film. These results provide a better understanding of polythiophene crystallization on graphene, and should help the design of more efficient graphene based organic devices by control of the crystallinity of the semiconducting film.     

Systematic Control of Nucleation Density in Poly(3‐Hexylthiophene) Thin Films

While molecular ordering via crystallization is responsible for many of the impressive optoelectronic properties of thin‐film semiconducting polymer devices, crystalline morphology and its crucial influence on performance remains poorly controlled and is usually studied as a passive result of the conditions imposed by film deposition parameters. A method for systematic control over crystalline morphology in conjugated polymer thin films by very precise control of nucleation density and crystal growth conditions is presented. A precast poly(3‐hexylthiophene) film is first swollen into a solution‐like state in well‐defined vapor pressures of a good solvent, while the physical state of the polymer chains is monitored using in situ UV–vis spectroscopy and ellipsometry. Nucleation density is selected by a controlled deswelling of the film or by a self‐seeding approach using undissolved crystalline aggregates that remain in the swollen film. Nucleation densities ranging successively over many orders of magnitude are achieved, extending into the regime of spherulitic domains 10 to 100 μm in diameter, a length scale highly relevant for typical probes of macroscopic charge transport such as field‐effect transistors. This method is presented as a tool for future systematic study of the structure‐function relation in semicrystalline semiconducting polymers in a broad range of applications.