Infrared Detection Using Transparent and Flexible Field‐Effect Transistor Array with Solution Processable Nanocomposite Channel of Reduced Graphene Oxide and P(VDF‐TrFE)

Photodetectors using optically responsive graphene (Gr) or reduced graphene oxide (R‐GO) on rigid substrates have showed promising results for detection of broad band light including infrared (IR). However, there have been only a few reports on Gr or R‐GO photodetectors with new functionalities such as optical transparency and/or flexibility. Herein, a new kind of transparent and flexible IR photodetector is presented using a field‐effect transistor (FET) structure in which an IR‐responsive nanocomposite layer of R‐GO and poly(vinylidenefluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)) is employed as the channel. The IR photodetector exhibits high IR responsivity, stability, and reproducibility under mechanical strain and ambient conditions. In addition, the capability of measuring the distribution of responses from each device in the transparent and flexible nanocomposite FET array under IR radiation from the human body is also demonstrated. Therefore, the development of a flexible IR photodetector with high responsivity, transparency, ease of integration, and stability in an ambient environment is a suitable alternative approach for achieving the stable monitoring of IR in many flexible and transparent electronic systems.     

Flexible Transparent Reduced Graphene Oxide Sensor Coupled with Organic Dye Molecules for Rapid Dual‐Mode Ammonia Gas Detection

Flexible chemical sensors utilizing chemically sensitive nanomaterials are of great interest for wearable sensing applications. However, obtaining high performance flexible chemical sensors with high sensitivity, fast response, transparency, stability, and workability at ambient conditions is still challenging. Herein, a newly designed flexible and transparent chemical sensor of reduced graphene oxide (R‐GO) coupled with organic dye molecules (bromophenol blue) is introduced. This device has promising properties such as high mechanical flexibility (>5000 bending cycles with a bending radius of 0.95 cm) and optical transparency (>60% in the visible region). Furthermore, stacking the water‐trapping dye layer on R‐GO enables a higher response as well as workability in a large relative humidity range (up to 80%), and dual‐mode detection capabilities of colorimetric and electrical sensing for NH₃ gas (5–40 ppm). These advantageous attributes of the flexible and transparent R‐GO sensor coupled with organic dye molecules provide great potential for real‐time monitoring of toxic gas/vapor in future practical chemical sensing at room conditions in wearable electronics.     

High Performance Three‐Dimensional Chemical Sensor Platform Using Reduced Graphene Oxide Formed on High Aspect‐Ratio Micro‐Pillars

The sensing performance of chemical sensors can be achieved not only by modification or hybridization of sensing materials but also through new design in device geometry. The performance of a chemical sensing device can be enhenced from a simple three‐dimensional (3D) chemiresistor‐based gas sensor platform with an increased surface area by forming networked, self‐assembled reduced graphene oxide (R‐GO) nanosheets on 3D SU8 micro‐pillar arrays. The 3D R‐GO sensor is highly responsive to low concentration of ammonia (NH₃) and nitrogen dioxide (NO₂) diluted in dry air at room temperature. Compared to the two‐dimensional planar R‐GO sensor structure, as the result of the increase in sensing area and interaction cross‐section of R‐GO on the same device area, the 3D R‐GO gas sensors show improved sensing performance with faster response (about 2%/s exposure), higher sensitivity, and even a possibly lower limit of detection towards NH₃ at room temperature.     

Solution‐Processed Flexible Broadband Photodetectors with Solution‐Processed Transparent Polymeric Electrode

Room‐temperature solution‐processed flexible photodetectors with spectral response from 300 to 2600 nm are reported. Solution‐processed polymeric thin film with transparency ranging from 300 to 7000 nm and superior electrical conductivity as the transparent electrode is reported. Solution‐processed flexible broadband photodetectors with a “vertical” device structure incorporating a perovskite/PbSe quantum dot bilayer thin film based on the above solution‐processed transparent polymeric electrode are demonstrated. The utilization of perovskite/PbSe quantum dot bilayer thin film as the photoactive layer extends spectral response to infrared region and boosts photocurrent densities in both visible and infrared regions through the trap‐assisted photomultiplication effect. Operated at room temperature and under an external bias of ‐1 V, the solution‐processed flexible photodetectors exhibit over 230 mA W^‐1 responsivity, over 1011 cm Hz1/2/W photodetectivity from 300 to 2600 nm and ≈70 dB linear dynamic ranges. It is also found that the solution‐processed flexible broadband photodetectors exhibit fast response time and excellent flexibility. All these results demonstrate that this work develop a facile approach to realize room‐temperature operated ultrasensitive solution‐processed flexible broadband photodetectors with “vertical” device structure through solution‐processed transparent polymeric electrode.     

Flexible Organic Photovoltaic Cells with In Situ Nonthermal Photoreduction of Spin‐Coated Graphene Oxide Electrodes

The first reduction methodology, compatible with flexible, temperature‐sensitive substrates, for the production of reduced spin‐coated graphene oxide (GO) electrodes is reported. It is based on the use of a laser beam for the in situ, non‐thermal, reduction of spin‐coated GO films on flexible substrates over a large area. The photoreduction process is one‐step, facile, and is rapidly carried out at room temperature in air without affecting the integrity of the graphene lattice or the flexibility of the underlying substrate. Conductive graphene films with a sheet resistance of as low as 700 Ω sq^?1 and transmittance of 44% can be obtained, much higher than can be achieved for flexible layers reduced by chemical means. As a proof of concept of our technique, laser‐reduced GO (LrGO) films are utilized as transparent electrodes in flexible, bulk heterojunction, organic photovoltaic (OPV) devices, replacing the traditional ITO. The devices displayed a power‐conversion efficiency of 1.1%, which is the highest reported so far for OPV device incorporating reduced GO as the transparent electrode. The in situ non‐thermal photoreduction of spin‐coated GO films creates a new way to produce flexible functional graphene electrodes for a variety of electronic applications in a process that carries substantial promise for industrial implementation.     

High‐Speed,Low‐Voltage,and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field‐Effect Transistors

Single‐crystal, 1D nanostructures are well known for their high mobility electronic transport properties. Oxide‐nanowire field‐effect transistors (FETs) offer both high optical transparency and large mechanical conformability which are essential for flexible and transparent display applications. Whereas the “on‐currents” achieved with nanowire channel transistors are already sufficient to drive active matrix organic light emitting diode (AMOLED) displays; it is shown here that incorporation of electrochemical‐gating (EG) to nanowire electronics reduces the operation voltage to ≤2 V. This opens up new possibilities of realizing flexible, portable, transparent displays that are powered by thin film batteries. A composite solid polymer electrolyte (CSPE) is used to obtain all‐solid‐state FETs with outstanding performance; the field‐effect mobility, on/off current ratio, transconductance, and subthreshold slope of a typical ZnO single‐nanowire transistor are 62 cm²/Vs, 10⁷, 155 μS/μm and 115 mV/dec, respectively. Practical use of such electrochemically‐gated field‐effect transistor (EG FET) devices is supported by their long‐term stability in air. Moreover, due to the good conductivity (≈10^?2 S/cm) of the CSPE, sufficiently high switching speed of such EG FETs is attainable; a cut‐off frequency in excess of 100 kHz is measured for in‐plane FETs with large gate‐channel distance of >10 μm. Consequently, operation speeds above MHz can be envisaged for top‐gate transistor geometries with insulator thicknesses of a few hundreds of nanometers. The solid polymer electrolyte developed in this study has great potential in future device fabrication using all‐solution processed and high throughput techniques.     

Temperature Performance of Doping‐Free Top‐Gate CNT Field‐Effect Transistors: Potential for Low‐ and High‐Temperature Electronics

High‐performance top‐gate carbon nanotube (CNT) field‐effect transistors (FETs) have been fabricated via a doping‐free fabrication process in which the polarity of the CNT FET is controlled by the injection of carriers from the electrodes, instead of using dopants. The performance of the doping‐free CNT FETs is systemically investigated over a wide temperature range, from very low temperatures of down to 4.3 K up to 573 K, and analyzed using several temperature‐dependent key device parameters including the ON/OFF state current and ratio, carrier mobility, and subthreshold swing. It is demonstrated that for ballistic and quasi‐ballistic CNT FETs, the operation of the CNT FETs is largely independent of the presence of dopant, thus avoiding detrimental effects due to dopant freeze‐out at low temperature and dopant diffusion at high temperature, and making it possible to use doping‐free CNT FETs in both low‐ and high‐temperature electronics. A new method is also proposed for extracting the band‐gap and diameter of a semiconducting CNT from the temperature dependent OFF‐state current and shown to yield results that are consistent with AFM measurements.     

Microflotronics: A Flexible,Transparent, Pressure‐Sensitive Microfluidic Film

There is an increasing demand for sensitive, flexible, and low‐cost pressure sensing solutions for health monitoring, wearable sensing, robotic and prosthetic applications. Here, the first flexible and pressure‐sensitive microfluidic film is reported, referred to as a microflotronic, with high transparency and seamless integratability with the state‐of‐the‐art microelectronics. The microflotronic film represents the initial effort to utilize a continuous microfluidic layer as the sensing elements for large‐area dynamic pressure mapping applications, and meanwhile an ultrahigh sensitivity of 0.45 kPa^?1 has been achieved in a compact, flexible, and transparent packaging. The response time of the device is in the millisecond range, which is at least an order of magnitude faster than that of its conventional flexible solid‐state counterparts. In addition, the fabrication process of the device is fully compatible with the industrial‐scale manufacturing of capacitive touchscreen devices and liquid‐crystal displays. The overall device packaging can be as thin as 200 μm with an optical transparency greater than 80%. Several practical applications were successfully demonstrated, including surface topology mapping and dynamic blood pressure monitoring. The microflotronic devices offer an alternative approach to the solid‐state pressure sensors, by offering an unprecedented sensitivity and ultrafast response time in a completely transparent, flexible and adaptive platform.     

Fully Transparent p‐MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium‐Tin‐Oxide Source/Drain

Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D‐like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p‐type channel 2D‐like FETs are seen. Here, 2D‐like thin transparent p‐channel MoTe₂ FETs with oxygen (O₂) plasma‐induced MoO_x/Pt/indium‐tin‐oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O₂ plasma and ultrathin Pt‐deposition processes on MoTe₂ surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm² V^?1 s^?1, a high ON/OFF current ratio of ≈10⁵, and 70% transmittance. In particular, for normal MoTe₂ FETs without ITO, O₂ plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm² V^?1 s^?1), introducing ultrathin MoO_x between Pt source/drain and MoTe₂. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.     

Self‐Healable Multifunctional Electronic Tattoos Based on Silk and Graphene

Electronic tattoos (E‐tattoos), which can be intimately mounted on human skin for noninvasive and high‐fidelity sensing, have attracted the attention of researchers in the field of wearable electronics. However, fabricating E‐tattoos that are capable of self‐healing and sensing multistimuli, similar to the inherent attributes of human skin, is still challenging. Herein, a healable and multifunctional E‐tattoo based on a graphene/silk fibroin/Ca²⁺ (Gr/SF/Ca²⁺) combination is reported. The highly flexible E‐tattoos are prepared through printing or writing using Gr/SF/Ca²⁺ suspension. The graphene flakes distributed in the matrix form an electrically conductive path that is responsive to environmental changes, such as strain, humidity, and temperature variations, endowing the E‐tattoo with high sensitivity to multistimuli. The performance of the E‐tattoo is investigated as a strain, humidity, and temperature sensor that shows high sensitivity, a fast response, and long‐term stability. The E‐tattoo is remarkably healed after damage by water because of the reformation of hydrogen and coordination bonds at the fractured interface. The healing efficiency is 100% in only 0.3 s. Finally, as proof of concept, its applications for monitoring of electrocardiograms, breathing, and temperature are shown. Based on its unique properties and superior performance, the Gr/SF/Ca²⁺ E‐tattoo may be a promising candidate material for epidermal electronics.     

High‐Mobility and Low Turn‐On Voltage n‐Channel OTFTs Based on a Solution‐Processable Derivative of Naphthalene Bisimide

In organic electronics solution‐processable n‐channel field‐effect transistors (FETs) matching the parameters of the best p‐channel FETs are needed. Progress toward the fabrication of such devices is strongly impeded by a limited number of suitable organic semiconductors as well as by the lack of processing techniques that enable strict control of the supramolecular organization in the deposited layer. Here, the use of N,N′‐bis(4‐n‐butylphenyl)‐1,4,5,8‐naphthalenetetracarboxylic‐1,4:5,8‐bisimide (NBI‐4‐n‐BuPh) for fabrication of n‐channel FETs is described. The unidirectionally oriented crystalline layers of NBI‐4‐n‐BuPh are obtained by the zone‐casting method under ambient conditions. Due to the bottom‐contact, top‐gate configuration used, the gate dielectric, Parylene C, also acts as a protective layer. This, together with a sufficiently low LUMO level of NBI‐4‐n‐BuPh allows the fabrication and operation of these novel n‐channel transistors under ambient conditions. The high order of the NBI‐4‐n‐BuPh molecules in the zone‐cast layer and high purity of the gate dielectric yield good performance of the transistors.     

Flexible,Graphene‐Coated Biocomposite for Highly Sensitive,Real‐Time Molecular Detection

Wearable biosensors hold significant potential for healthcare and environmental applications, and the development of flexible and biocompatible sensing platforms for high accuracy detection of physiological biomarkers remains an elusive goal. Herein, an ultrasensitive, flexible sensor is described that is based on a 3D hierarchical biocomposite comprised of hollow, natural pollen microcapsules that are coated with a conductive graphene layer. Modular assembly of the graphene‐coated microcapsules onto an ultrathin polyethylene terephthalate layer enables a highly flexible sensor configuration with tunable selectivity afforded by subsequent covalent immobilization of antibodies against target antigens. In a proof‐of‐concept example, the biosensor demonstrates ultrahigh sensitivity detection of prostate specific antigen (PSA) down to 1.7 × 10^?15m with real‐time feedback and superior performance over conventional 2D graphene‐coated sensors. Importantly, the device performance is consistently high across various bending conditions. Taken together, the results demonstrated in this work highlight the merits of employing lightweight biocomposites as modular building blocks for the design of flexible biosensors with highly responsive and sensitive molecular detection capabilities.     

Bio‐Inspired Stretchable,Adhesive, and Conductive Structural Color Film for Visually Flexible Electronics

The rapid progress in flexible electronic devices has attracted immense interest in many applications, such as health monitoring devices, sensory skins, and implantable apparatus. Here, inspired by the adhesion features of mussels and the color shift mechanism of chameleons, a novel stretchable, adhesive, and conductive structural color film is presented for visually flexible electronics. The film is generated by adding a conductive carbon nanotubes polydopamine (PDA) filler into an elastic polyurethane (PU) inverse opal scaffold. Owing to the brilliant flexibility and inverse opal structure of the PU layer, the film shows stable stretchability and brilliant structural color. Besides, the catechol groups on PDA impart the film with high tissue adhesiveness and self‐healing capability. Notably, because of its responsiveness, the resultant film is endowed with color‐changing ability that responds to motions, which can function as dual‐signal soft human‐motion sensors for real‐time color‐sensing and electrical signal monitoring. These features make the bio‐inspired hydrogel‐based electronics highly potential in the flexible electronics field.     

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state‐of‐art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage, and suffer from poor thermal stability. Here, developed is an all‐inorganic flexible FeFET based on epitaxial Pb(Zr_0.1Ti_0.9)O₃/ZnO heterostructure on a mica substrate, which not only operates under a small voltage (±6 V) and thus consumes low power with an excellent on/off ratio of 10⁴ as well as retention characteristics, but also shows robust FeFET performance under large bending deformation (4 mm), extended bending cycling (500 cycles), and high temperature operation at 200 °C. Importantly, the FeFET characteristics depend on temperature, but not on temperature history, critical for operation under repeated thermal loading. The excellent mechanical flexibility and functional robustness of the flexible FeFET originate from the unique van der Waals bonded layer structure of mica, facilitating a small bending radius yet modest strain. This work demonstrates the great promise of mica as a universal platform to integrate complicated functional devices for flexible electronics, especially under harsh environment.     

Room‐Temperature Self‐Organizing Characteristics of Soluble Acene Field‐Effect Transistors

We report on the room‐temperature self‐organizing characteristics of thin films of the organic small‐molecule semiconductor triethylsilylethynyl‐anthradithiophene (TES‐ADT) and its effect on the electrical properties of TES‐ADT‐based field‐effect transistors (FETs). The morphology of TES‐ADT films changed dramatically with time, and the field‐effect mobility of FETs based on these films increased about 100‐fold after seven days as a result of the change in molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film. We found that the molecular movement is large enough to induce a conformational change to an energetically stable state in spin‐coated TES‐ADT films, because TES‐ADT has a low glass‐transition temperature (around room temperature). Our findings demonstrate that organic small‐molecule semiconductors that exhibit a low crystallinity immediately after spin‐coating can be changed into highly crystalline structures by spontaneous self‐organization of the molecules at room temperature, which results in improved electrical properties of FETs based on these semiconductors.     

Transparent,Stimuli‐Responsive Films from Cellulose‐Based Organogel Nanoparticles

The use of bio‐based nanoscaled cellulose for the construction of novel functional materials has progressed rapidly over the past years. In comparison to most of studies starting with the hydrophilic nanoscaled cellulose, surface‐stearoylated cellulose nanoparticles (SS‐CNPs) are used in this report for the construction of multifunctional, responsive films. SS‐CNPs with an average size of 115 ± 0.5 nm are obtained after the surface‐modification of cellulose under heterogeneous conditions. Crystalline cellulose core is present within SS‐CNPs according to solid‐state ¹³C nuclear magnetic resonance (NMR) spectroscopy. SS‐CNPs show excellent dispersibility in nonpolar solvents and form temperature‐responsive organogels in tetrahydrofuran (THF) at low temperature or after long time storage at room temperature. Moreover, transparent and self‐standing films of SS‐CNPs from their THF‐suspension show solvent‐responsive surface wettability and responsive shape‐memory property. SS‐CNPs can also be used for the fabrication of nanocomposite films together with nonpolar compounds, such as (2‐stearoylaminoethyl) rhodamine B. Thus, these novel SS‐CNPs derived from sustainable cellulose fibers are promising candidates for the construction of novel functional materials.     

Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

Flexible transparent display is a promising candidate to visually communicate with each other in the future Internet of Things era. The flexible oxide thin‐film transistors (TFTs) have attracted attention as a component for transparent display by its high performance and high transparency. The critical issue of flexible oxide TFTs for practical display applications, however, is the realization on transparent and flexible substrate without any damage and characteristic degradation. Here, the ultrathin, flexible, and transparent oxide TFTs for skin‐like displays are demonstrated on an ultrathin flexible substrate using an inorganic‐based laser liftoff process. In this way, skin‐like ultrathin oxide TFTs are conformally attached onto various fabrics and human skin surface without any structural damage. Ultrathin flexible transparent oxide TFTs show high optical transparency of 83% and mobility of 40 cm² V^?1 s^?1. The skin‐like oxide TFTs show reliable performance under the electrical/optical stress tests and mechanical bending tests due to advanced device materials and systematic mechanical designs. Moreover, skin‐like oxide logic inverter circuits composed of n‐channel metal oxide semiconductor TFTs on ultrathin, transparent polyethylene terephthalate film have been realized.     

Room‐Temperature Metallic Fusion‐Induced Layer‐by‐Layer Assembly for Highly Flexible Electrode Applications

To fabricate flexible electrodes, conventional silver (Ag) nanomaterials have been deposited onto flexible substrates, but the formed electrodes display limited electrical conductivity due to residual bulky organic ligands, and thus postsintering processes are required to improve the electrical conductivity. Herein, an entirely different approach is introduced to produce highly flexible electrodes with bulk metal–like electrical conductivity: the room‐temperature metallic fusion of multilayered silver nanoparticles (NPs). Synthesized tetraoctylammonium thiosulfate (TOAS)‐stabilized Ag NPs are deposited onto flexible substrates by layer‐by‐layer assembly involving a perfect ligand‐exchange reaction between bulky TOAS ligands and small tris(2‐aminoethyl)amine linkers. The introduced small linkers substantially reduce the separation distance between neighboring Ag NPs. This shortened interparticle distance, combined with the low cohesive energy of Ag NPs, strongly induces metallic fusion between the close‐packed Ag NPs at room temperature without additional treatments, resulting in a high electrical conductivity of ≈1.60 × 10⁵ S cm^?1 (bulk Ag: ≈6.30 × 10⁵ S cm^?1). Furthermore, depositing the TOAS–Ag NPs onto cellulose papers through this approach can convert the insulating substrates into highly flexible and conductive papers that can be used as 3D current collectors for energy‐storage devices.     

Intercalation‐Induced Tunable Stimuli‐Responsive Color‐Change Properties of Crystalline Organic Layered Compound

Layered structures accommodate guest molecules and ions in the interlayer space through intercalation. Organic layered compounds, such as layered polymers, have both intercalation and dynamic properties. Here intercalation‐induced tunable temperature‐ and mechanical‐stress‐responsive color‐change properties of crystalline layered polydiacetylene (PDA) as an organic layered compound are reported. In general, organic materials with stimuli responsivity are developed by molecular design and synthesis. In the present work, intercalation of guest metal cations in the layered PDA directs tuning of the stimuli‐responsive color‐change properties, such as color, responsivity, and reversibility. Whereas PDA without intercalation of metal ions distinctly changes the color from blue to red at the threshold temperature, the PDA with intercalation of the divalent metal ions (PDA‐M²⁺) shows a variety of color‐change properties. The present study indicates that intercalation has versatile potentials for functionalization of organic layered compounds.     

Room‐Temperature Printing of Organic Thin‐Film Transistors with π‐Junction Gold Nanoparticles

Printing semiconductor devices under ambient atmospheric conditions is a promising method for the large‐area, low‐cost fabrication of flexible electronic products. However, processes conducted at temperatures greater than 150 °C are typically used for printed electronics, which prevents the use of common flexible substrates because of the distortion caused by heat. The present report describes a method for the room‐temperature printing of electronics, which allows thin‐film electronic devices to be printed at room temperature without the application of heat. The development of π‐junction gold nanoparticles as the electrode material permits the room‐temperature deposition of a conductive metal layer. Room‐temperature patterning methods are also developed for the Au ink electrodes and an active organic semiconductor layer, which enables the fabrication of organic thin‐film transistors through room‐temperature printing. The transistor devices printed at room temperature exhibit average field‐effect mobilities of 7.9 and 2.5 cm² V^?1 s^?1 on plastic and paper substrates, respectively. These results suggest that this fabrication method is very promising as a core technology for low‐cost and high‐performance printed electronics.