共查询到19条相似文献,搜索用时 62 毫秒
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提出了一种新颖的单电子随机数发生器(RNG).该随机数发生器由多个单电子隧穿结(MTJ)以及单电子晶体管(SET)/MOS管混合输出电路组成.MTJ被用于实现一个高频率的振荡器.它利用了电子隧穿的物理随机性得到了很大的振荡频率漂移.SET/MOS管输出电路放大并输出MTJ振荡器的输出信号.该信号经过一个低频信号采样后,产生随机数序列.所提出的随机数发生器使用简单的电路结构产生了高质量的随机数序列.它具有简单的结构,输出随机数的速度可以高达1GHz.同时,该电路还具有带负载能力以及很低的功耗.这种新颖的随机数发生器对未来的密码和通讯系统具有一定的应用前景. 相似文献
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提出了一种新颖的单电子随机数发生器(RNG).该随机数发生器由多个单电子隧穿结(MTJ)以及单电子晶体管(SET)/MOS管混合输出电路组成.MTJ被用于实现一个高频率的振荡器.它利用了电子隧穿的物理随机性得到了很大的振荡频率漂移.SET/MOS管输出电路放大并输出MTJ振荡器的输出信号.该信号经过一个低频信号采样后,产生随机数序列.所提出的随机数发生器使用简单的电路结构产生了高质量的随机数序列.它具有简单的结构,输出随机数的速度可以高达1GHz.同时,该电路还具有带负载能力以及很低的功耗.这种新颖的随机数发生器对未来的密码和通讯系统具有一定的应用前景. 相似文献
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基于SET的I-V特性以及SET与MOS管互补的特性,以MOS管的逻辑电路为设计思想,首先提出了一个SET/MOS混合结构的反相器,进而推出或非门电路,并最终实现了一个唯一地址译码器.通过SET和MOS管两者的混合构建的电路与纯SET实现的电路相比,电路的带负载能力增强;与纯MOS晶体管实现的电路相比,电路同样仅需要单电源供电,且元器件数目得到了减少,电路的静态功耗大大降低.仿真结果验证了电路设计的正确性. 相似文献
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基于单电子晶体管的特性,利用电流模式技术,提出一种单电子晶体管(SET)的混沌电路实现方法.全SET混沌电路的实现,更加便于用集成电路实现,并降低了工作电压,提高了工作频率带宽.利用SPICE对电路进行仿真,结果验证了电路实现的正确性. 相似文献
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基于单电子晶体管(SET)的I-V特性和CNN细胞单元的硬件结构原理,给出了三种基于SET的CNN硬件电路具体实现方法:一是基于SET的库仑振荡特性和CMOS数字电路的设计思想方法;二是根据细胞单元的等效结构分块实现方法;三是基于SET阵列的传输特性实现CNN方法,并重点阐述了后两种SET的CNN实现方法,分析了它们的优缺点。 相似文献
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SET/CMOS作为一种单电子晶体管与纳米级CMOS混合结构的新兴纳米电子器件,不仅实现两者优势互补,而且其突出的功能特性极大影响着电路微型化发展的道路。从SET/CMOS的串联和并联两种基本结构出发,阐述了各自的工作原理与特性、进而介绍了该混合器件目前在实验室制备、电路设计以及数值模拟研究方面的现状,最后讨论了器件在发展中尚需解决的问题及其应用前景。SET/CMOS的容错电路及互连结构新型设计将会加速实用化的进程,使集成电路产生质的飞跃,进而有望实现超高密度的信息存储和超高速信息处理,并将在未来智能计算机、通信设备和自动化方面发挥重要作用。 相似文献
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MUHAMMAD TAHER ABUELMA'ATTI 《International Journal of Electronics》2013,100(6):941-948
The performance of the piecewise linear limiter with multi-carrier input signal with arbitrary carrier amplitudes is analysed by using a simple, accurate and general approach. The limiter characteristic is expanded as an infinite Fourier series and convergent series expressions are obtained for the output carriers and intermodu-lation products. The special case of an input consisting of two equal-amplitude carriers is considered in detail and the results are found to be very accurate. This result will help in deciding whether the piecewise linear limiter will produce optimal or suboptimal results under specific traffic and criterion of optimality. 相似文献
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Yan Shi Tianxu Zhang Zhiguo Cao 《Journal of Infrared, Millimeter and Terahertz Waves》2004,25(6):959-972
Considering different detector in IRFPA has different nonlinear response characteristic, a novel piecewise linear connection scheme for nonuniformity correction in IRFPA is proposed in this paper. Comparing to the widely used piecewise linear correction, the proposed scheme tries to find the n-segment piecewise straight-line which strives for going near (not always through) all available calibration points, rather than just passes through some n + 1 calibration points. Since each detector's output is corrected to the expected correction value as near as possible, the new scheme can achieve better NUC performance within the whole calibration range than that of the old one. The comparison experiment with simulated data and real IRFPA infrared data shows that the performance of this approach is more perfect than that of the old piecewise linear algorithm. 相似文献
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结合Hodgkin-Huxley神经元模型的动力学特性与Integrate-and-Fire神经元模型的解析特性,提出了一种新的二维分段线性脉冲神经元模型.该模型的优点在于既可通过分叉理论对兴奋性系统进行定性描述,又可通过状态变量的解析式对神经元行为进行定量分析.通过详细的分析,发现该模型具有许多一维Integrate-and-Fire神经元模型所不具有的新的神经计算特性.在实验中,应用该模型模拟了大部分已知皮层神经元的脉冲和簇放电行为. 相似文献
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A pulse frequency modulation (PFM) type ferroelectric neuron circuit composed of a metal-ferroelectric-semiconductor field effect transistor (MFSFET) and a CMOS Schmitt-trigger oscillator was fabricated on an SOI structure, in which SrBi2Ta2O9 (SBT) was used as a ferroelectric gate material of the FET. It was found that the fabricated MFSFET showed a relatively good ID-VG (drain current versus gate voltage) characteristic with a hysteresis loop due to the ferroelectricity of the SBT film and that it acted as a synapse device with adaptive-learning function. It was also found that the output pulse height of the circuit was as high as the power supply voltage and that output pulse frequency was changed as the number of applied input pulses increased 相似文献
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电流模降压DC-DC内部补偿研究 总被引:1,自引:1,他引:0
利用片内补偿实现了一款单片电流模降压型DC-DC变换器。设计的分段线性斜坡补偿电路大大缓解了传统线性方法的过补偿问题,提高了系统响应速度。集成的RC频率补偿结构克服了稳定性对输出负载以及陶瓷输出电容ESR的依赖,简化了设计,节省了PCB面积。芯片基于标准0.5μm CMOS工艺实现,内部补偿实现了良好的环路稳定性,负载调整率以及线性调整率均小于0.4%,400 mA负载阶跃对应输出电压的响应时间小于8μs。同步整流技术使得效率高达94%。 相似文献
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为了研究温度、密度对磁化等离子体光子晶体禁带特性的影响,采用在等温近似的条件下,磁化等离子体的分段线形电流密度卷积时域有限差分算法研究了1维磁化等离子体光子晶体的禁带特性。以高斯脉冲为激励源,用算法公式得到的电磁波透射系数来讨论了温度、等离子体层密度对其禁带特性的影响。结果表明,改变温度和等离子体层密度分布可以实现对禁带的控制。 相似文献
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The formulas derived by Stette [1] permit the calculation of TWT output carrier power and intermod power when the input to the TWT consists of an infinite number of infinitesimal carriers. The formulas for these quantities involve an integration of the TWT singlecarrier characteristic over a semi-infinite range, and for most of the TWT's one considers, a simple approximation of the integration by a summation gives satisfactory answers. However, when one considers special TWT's, e.g., linearized TWT's or the piecewise linear limiter [2], simple approximations are often not good enough. To get accurate results, a multipoint Gaussian quadrature must be used. 相似文献
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We present an analog BiCMOS neuron circuit with linear input synapses which implements the standard Hopfield neuron model. The use of bipolar transistors allows linear multiplication, exact replication of the sigmoid function, and precise linear gain control. SPICE simulations are presented which demonstrate the properties of the neuron. The use of the basic neuron structure to build multilayer networks is discussed, as are some large-scale integration issues. 相似文献